@misc{FrankeserHillerWachsmuthetal., author = {Frankeser, Sophia and Hiller, Sebastian and Wachsmuth, Gerd and Lutz, Josef}, title = {Using the on-state-Vbe,sat-voltage for temperature estimation of SiC-BJTs during normal operation}, series = {PCIM Europe : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, 19-21 May 2015 : proceedings}, journal = {PCIM Europe : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, 19-21 May 2015 : proceedings}, publisher = {VDE}, address = {Berlin ; Offenbach}, isbn = {978-3-8007-3924-0}, abstract = {Temperature measurement of power semiconductor devices in real-life application is a desired goal to implement health monitoring methods like thermal impedance spectroscopy. During on-state, the base-emitter voltage of current driven SiC bipolar transistors shows dependency on the collector current but also on the temperature. It is planned to measure the virtual junction temperature of a SiC-BJT through electric sensitive parameters during onstate.}, language = {en} }