@misc{SchwartzSaringArguirovetal., author = {Schwartz, Bernhard and Saring, Philipp and Arguirov, Tzanimir V. and Oehme, Michael and Kostecki, Konrad and Kasper, Erich and Schulze, J. and Kittler, Martin}, title = {Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1012-0394}, doi = {10.4028/www.scientific.net/SSP.242.361}, pages = {361 -- 367}, language = {en} } @misc{MartienssenSimonSchulze, author = {Martienssen, Marion and Simon, J. and Schulze, R.}, title = {Untersuchungen zum Einsatz von aufbereiteter Kfz-K{\"u}hlerfl{\"u}ssigkeit als organische C-Quelle bei der biologischen Sickerwasserbehandlung}, series = {Korrespondenz Abwasser}, volume = {44}, journal = {Korrespondenz Abwasser}, number = {9}, issn = {0341-1540}, pages = {1622 -- 1627}, language = {de} } @misc{MartienssenSchulzeSimon, author = {Martienssen, Marion and Schulze, R. and Simon, J.}, title = {Capacities and limits of three different technologies for the biological treatment of leachate from solid waste landfill sites}, language = {en} } @inproceedings{MartienssenSchulzeHeinkeetal., author = {Martienssen, Marion and Schulze, R. and Heinke, M. and Pohl, W. and Simon, J.}, title = {Leistungen und Leistungsgrenzen unterschiedlicher biotechnologischer Verfahren f{\"u}r die Behandlung von Deponiesickerwasser}, series = {11. Jahrestagung der Biotechnologen, N{\"u}rnberg, 24. bis 26. Mai 1993, Kurzfassungen}, booktitle = {11. Jahrestagung der Biotechnologen, N{\"u}rnberg, 24. bis 26. Mai 1993, Kurzfassungen}, publisher = {DECHEMA}, address = {Frankfurt am Main}, pages = {43 -- 44}, language = {de} } @misc{SteuerSchwarzOehmeetal., author = {Steuer, Oliver and Schwarz, Daniel and Oehme, Michael and Schulze, J. and Maczko, H. and Kudrawiec, Robert and Fischer, Inga Anita and Heller, R. and H{\"u}bner, R. and Khan, M. M. and Georgiev, Yordan M. and Zhou, Shengqiang and Helm, M. and Prucnal, Slawomir}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, series = {Journal of Physics: Condensed Matter}, volume = {35}, journal = {Journal of Physics: Condensed Matter}, number = {5}, issn = {1361-648X}, doi = {10.1088/1361-648X/aca3ea}, language = {en} } @misc{WendavFischerVirgilioetal., author = {Wendav, Torsten and Fischer, Inga Anita and Virgilio, Michele and Capellini, Giovanni and Oliveira, F. and Cerqueira, M. F. and Benedetti, A. and Chiussi, Stefano and Zaumseil, Peter and Schwartz, Bernhard and Busch, Kurt and Schulze, J.}, title = {Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling}, series = {Physical Review B 94}, volume = {94}, journal = {Physical Review B 94}, number = {24}, doi = {10.1103/PhysRevB.94.245304}, pages = {245304}, language = {en} } @misc{ElogailBerkmannClausenetal., author = {Elogail, Yasmine and Berkmann, Fritz and Clausen, Caterina J. and Fischer, Inga Anita and H{\"a}nel, Linda A. and Schwarz, Daniel and Schulze, J{\"o}rg}, title = {Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si}, series = {Microelectronics Journal}, volume = {123}, journal = {Microelectronics Journal}, issn = {1879-2391}, doi = {10.1016/j.mejo.2022.105404}, pages = {11}, language = {en} } @misc{SchlykowManganelliRoemeretal., author = {Schlykow, Viktoria and Manganelli, Constanza Lucia and R{\"o}mer, Friedhard and Clausen, Caterina J. and Augel, Lion and Schulze, J{\"o}rg and Katzer, Jens and Schubert, Michael Andreas and Witzigmann, Bernd and Schroeder, Thomas and Capellini, Giovanni and Fischer, Inga Anita}, title = {Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas}, series = {Nanotechnology}, volume = {31}, journal = {Nanotechnology}, number = {34}, issn = {1361-6528}, doi = {10.1088/1361-6528/ab91ef}, pages = {11}, language = {en} } @misc{FischerClausenSchwarzetal., author = {Fischer, Inga Anita and Clausen, Caterina J. and Schwarz, Daniel and Zaumseil, Peter and Capellini, Giovanni and Virgilio, Michele and da Silva Figueira, Maria Cecilia and Birner, Stefan and Koelling, Sebastian and Koenraad, Paul M. and Huang, Michael R. S. and Koch, Christoph T. and Wendav, Torsten and Busch, Kurt and Schulze, J{\"o}rg}, title = {Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells}, series = {Physical Review Materials}, volume = {4}, journal = {Physical Review Materials}, number = {2}, issn = {2475-9953}, doi = {10.1103/PhysRevMaterials.4.024601}, pages = {10}, language = {en} } @misc{SchlipfTetznerSpiritoetal., author = {Schlipf, Jon and Tetzner, Henriette and Spirito, Davide and Manganelli, Constanza Lucia and Capellini, Giovanni and Huang, Michael R. S. and Koch, Christoph T. and Clausen, Caterina J. and Elsayed, Ahmed and Schulze, J{\"o}rg and Fischer, Inga Anita}, title = {Raman shifts in MBE-grown SixGe1 - x - ySny alloys with large Si content}, series = {Journal of Raman Spectroscopy}, journal = {Journal of Raman Spectroscopy}, issn = {1097-4555}, doi = {10.1002/jrs.6098}, pages = {9}, language = {en} } @misc{SteuerLiedkeButterlingetal., author = {Steuer, O. and Liedke, Maciej O. and Butterling, M. and Schwarz, D. and Schulze, J. and Li, Z. and Wagner, A. and Fischer, Inga Anita and H{\"u}bner, R. and Zhou, S.}, title = {Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy}, series = {Journal of Physics: Condensed Matter}, volume = {36}, journal = {Journal of Physics: Condensed Matter}, number = {8}, issn = {0953-8984}, doi = {10.1088/1361-648X/ad0a10}, pages = {1 -- 11}, abstract = {Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening - variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters.}, language = {en} }