@misc{HayatSpiritoCorleyWiciaketal., author = {Hayat, Ahsan and Spirito, Davide and Corley-Wiciak, Agnieszka Anna and Schubert, Markus Andreas and Masood, Maria and Reichmann, Felix and Ratzke, Markus and Capellini, Giovanni and Fischer, Inga Anita}, title = {MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates}, series = {Materials Science in Semiconductor Processing}, volume = {165}, journal = {Materials Science in Semiconductor Processing}, issn = {1873-4081}, doi = {10.1016/j.mssp.2023.107693}, language = {en} } @misc{UhlmannPerezBoschQuesadaFritscheretal., author = {Uhlmann, Max and P{\´e}rez-Bosch Quesada, Emilio and Fritscher, Markus and P{\´e}rez, Eduardo and Schubert, Markus Andreas and Reichenbach, Marc and Ostrovskyy, Philip and Wenger, Christian and Kahmen, Gerhard}, title = {One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing}, series = {21st IEEE Interregional NEWCAS Conference (NEWCAS)}, journal = {21st IEEE Interregional NEWCAS Conference (NEWCAS)}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-0024-6}, issn = {2474-9672}, doi = {10.1109/NEWCAS57931.2023.10198073}, pages = {5}, abstract = {The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications.}, language = {en} } @misc{MahadevaiahPerezLiskeretal., author = {Mahadevaiah, Mamathamba Kalishettyhalli and Perez, Eduardo and Lisker, Marco and Schubert, Markus Andreas and Perez-Bosch Quesada, Emilio and Wenger, Christian and Mai, Andreas}, title = {Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers}, series = {Electronics : open access journal}, volume = {11}, journal = {Electronics : open access journal}, number = {10}, issn = {2079-9292}, doi = {10.3390/electronics11101540}, pages = {14}, abstract = {The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I-V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.}, language = {en} } @misc{SeifarthSchubertGiussanietal., author = {Seifarth, Olaf and Schubert, Markus Andreas and Giussani, A. and Klenov, D. O. and Schmeißer, Dieter and Schroeder, Thomas}, title = {Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure}, volume = {108}, number = {10}, issn = {1089-7550}, pages = {103709}, language = {en} } @misc{TarnawskaZaumseilSchubertetal., author = {Tarnawska, Lidia Lupina and Zaumseil, Peter and Schubert, Markus Andreas and Okur, S. and Morkoc, H. and Paszkiewicz, R. and Storck, Peter and Schroeder, Thomas}, title = {Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111)}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3699201}, pages = {073509 -- 073509-4}, language = {en} } @misc{SowinskaBertaudWalczyketal., author = {Sowinska, Małgorzata and Bertaud, Thomas and Walczyk, Damian and Thiess, Sebastian and Schubert, Markus Andreas and Lukosius, Mindaugas and Drube, W. and Walczyk, Christian and Schr{\"o}der, Thomas}, title = {Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures}, series = {Applied Physics Letters}, volume = {100}, journal = {Applied Physics Letters}, number = {23}, issn = {0003-6951}, pages = {233509 -- 233514}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Schubert, Markus Andreas and Schroeder, Thomas}, title = {X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates}, series = {Journal of Applied Crystallography}, volume = {46}, journal = {Journal of Applied Crystallography}, number = {4}, issn = {0021-8898}, pages = {868 -- 873}, language = {en} } @misc{KalettaWipfFraschkeetal., author = {Kaletta, Udo Christian and Wipf, Christian and Fraschke, Mirko and Wolansky, Dirk and Schubert, Markus Andreas and Schroeder, Thomas and Wenger, Christian}, title = {AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss}, series = {IEEE Transactions on Electron Devices}, volume = {62}, journal = {IEEE Transactions on Electron Devices}, number = {3}, issn = {0018-9383}, doi = {10.1109/TED.2015.2395443}, pages = {764 -- 768}, language = {en} } @misc{NiuCapelliniLupinaetal., author = {Niu, Gang and Capellini, Giovanni and Lupina, Grzegorz and Niermann, Tore and Salvalaglio, Marco and Marzegalli, Anna and Schubert, Markus Andreas and Zaumseil, Peter and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Montalenti, Francesco and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {3}, issn = {1944-8252}, pages = {2017 -- 2026}, language = {en} } @misc{ZaumseilSchubertYamamotoetal., author = {Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Skibitzki, Oliver and Capellini, Giovanni and Schr{\"o}der, Thomas}, title = {Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.242.402}, pages = {402 -- 407}, language = {en} }