@inproceedings{KleebergSchubertKoschorrecketal., author = {Kleeberg, Andreas and Schubert, Hendrik and Koschorreck, Matthias and Nixdorf, Brigitte}, title = {Biomasse und Prim{\"a}r-produktion der f{\"a}digen Gr{\"u}nalge Zygogonium ericetorum in einem extrem sauren (pH 2,9) Tagebausee und ihr Einfluss auf die biogene Alkalinit{\"a}tsbildung}, series = {Erweiterte Zusammenfassung der Jahrestagung der DGL 2004 in Potsdam}, booktitle = {Erweiterte Zusammenfassung der Jahrestagung der DGL 2004 in Potsdam}, publisher = {Weißensee Verlag}, address = {Berlin}, isbn = {3-89998-060-3}, pages = {199 -- 2003}, language = {de} } @misc{PerezBoschQuesadaRomeroZalizPerezetal., author = {P{\´e}rez-Bosch Quesada, Emilio and Romero-Zaliz, Roc{\´i}o and Perez, Eduardo and Mahadevaiah, Mamathamba Kalishettyhalli and Reuben, John and Schubert, Markus Andreas and Jim{\´e}nez-Molinos, Francisco and Rold{\´a}n, Juan Bautista and Wenger, Christian}, title = {Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems}, series = {Electronics (MDPI)}, volume = {10}, journal = {Electronics (MDPI)}, number = {6}, issn = {2079-9292}, doi = {10.3390/electronics10060645}, pages = {13}, abstract = {In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.}, language = {en} } @misc{FranckDabrowskiSchubertetal., author = {Franck, Max and Dabrowski, Jaroslaw and Schubert, Markus Andreas and Wenger, Christian and Lukosius, Mindaugas}, title = {Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition}, series = {Nanomaterials}, volume = {12}, journal = {Nanomaterials}, number = {19}, issn = {2079-4991}, doi = {10.3390/nano12193260}, abstract = {The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10-7-10-3 mbar and 900-980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2-3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3-10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth}, language = {en} } @misc{PerezBoschQuesadaRizziGuptaetal., author = {Perez-Bosch Quesada, Emilio and Rizzi, Tommaso and Gupta, Aditya and Mahadevaiah, Mamathamba Kalishettyhalli and Schubert, Andreas and Pechmann, Stefan and Jia, Ruolan and Uhlmann, Max and Hagelauer, Amelie and Wenger, Christian and Perez, Eduardo}, title = {Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing}, series = {14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023}, journal = {14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-0240-0}, doi = {10.1109/CDE58627.2023.10339525}, pages = {4}, abstract = {This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications. Index Terms—radiation-hard, hardness-by-design, memristive devices, Enclosed Layout Transistor, in-memory computing}, language = {en} } @misc{SchlykowManganelliRoemeretal., author = {Schlykow, Viktoria and Manganelli, Constanza Lucia and R{\"o}mer, Friedhard and Clausen, Caterina J. and Augel, Lion and Schulze, J{\"o}rg and Katzer, Jens and Schubert, Michael Andreas and Witzigmann, Bernd and Schroeder, Thomas and Capellini, Giovanni and Fischer, Inga Anita}, title = {Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas}, series = {Nanotechnology}, volume = {31}, journal = {Nanotechnology}, number = {34}, issn = {1361-6528}, doi = {10.1088/1361-6528/ab91ef}, pages = {11}, language = {en} } @misc{ZoellnerDabrowskiZaumseiletal., author = {Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Zaumseil, Peter and Giussani, A. and Schubert, Markus Andreas and Lupina, Grzegorz and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Reichling, M. and Schr{\"o}der, Thomas}, title = {On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems}, series = {Physical Review}, volume = {85}, journal = {Physical Review}, number = {3}, issn = {1098-0121}, doi = {10.1103/PhysRevB.85.035302}, pages = {035302 -- 035311}, language = {en} } @misc{HayatSpiritoCorleyWiciaketal., author = {Hayat, Ahsan and Spirito, Davide and Corley-Wiciak, Agnieszka Anna and Schubert, Markus Andreas and Masood, Maria and Reichmann, Felix and Ratzke, Markus and Capellini, Giovanni and Fischer, Inga Anita}, title = {MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates}, series = {Materials Science in Semiconductor Processing}, volume = {165}, journal = {Materials Science in Semiconductor Processing}, issn = {1873-4081}, doi = {10.1016/j.mssp.2023.107693}, language = {en} } @misc{NiuZaumseilSchubertetal., author = {Niu, Gang and Zaumseil, Peter and Schubert, Markus Andreas and Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Schroeder, Thomas}, title = {Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, pages = {011906-1 -- 011906-5}, language = {en} } @misc{ZaumseilYamamotoBaueretal., author = {Zaumseil, Peter and Yamamoto, Yuji and Bauer, Joachim and Schubert, Markus Andreas and Matejova, Jana and Kozłowski, Grzegorz and Schr{\"o}der, Thomas and Tillack, Bernd}, title = {Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {8}, issn = {0040-6090}, doi = {10.1016/j.tsf.2011.10.178}, pages = {3240 -- 3244}, language = {en} } @misc{KozłowskiZaumseilSchubertetal., author = {Kozłowski, Grzegorz and Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {11}, issn = {0957-4484}, doi = {10.1088/0957-4484/23/11/115704}, pages = {115704 -- 115711}, language = {en} }