@misc{ZhangSunLietal., author = {Zhang, Wei and Sun, Ke and Li, Biyun and Lee, Jae Young and Xie, Ya-Hong and Katzer, Jens and Schroeder, Thomas and Wei, Xinyu and Russell, Thomas P.}, title = {Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si}, series = {IEEE Transactions on Nanotechnology}, volume = {11}, journal = {IEEE Transactions on Nanotechnology}, number = {5}, issn = {1536-125X}, doi = {10.1109/TNANO.2012.2208472}, pages = {999 -- 1003}, language = {en} } @misc{BertaudSowinskaWalczyketal., author = {Bertaud, Thomas and Sowinska, Małgorzata and Walczyk, Damian and Thiess, Sebastian and Walczyk, Christian and Gloskovski, A. and Drube, W. and Schroeder, Thomas}, title = {In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy}, series = {Applied Physics Letters}, volume = {112}, journal = {Applied Physics Letters}, number = {4}, pages = {043506 -- 043511}, language = {en} } @misc{BertaudWalczykSowinskaetal., author = {Bertaud, Thomas and Walczyk, Damian and Sowinska, Małgorzata and Wolansky, Dirk and Tillack, Bernd and Schoof, Gunther and Korolevych, R. and Wenger, Christian and Thiess, Sebastian and Schroeder, Thomas and Walczyk, Christian}, title = {HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {4}, issn = {1938-6737}, pages = {21 -- 26}, language = {en} } @misc{FroehlichJančovičHudeketal., author = {Froehlich, K. and Jančovič, P. and Hudek, B. and D{\´e}rer, J. and Paskaleva, A. and Bertaud, Thomas and Schroeder, Thomas}, title = {Atomic layer deposition of thin oxide films for resistive switching}, series = {Electrochemical Society (ECS) Transactions}, volume = {58}, journal = {Electrochemical Society (ECS) Transactions}, number = {10}, issn = {1938-6737}, doi = {10.1149/05810.0163ecst}, pages = {163 -- 170}, language = {en} } @misc{LangeErnstTeubneretal., author = {Lange, Felix and Ernst, Owen C. and Teubner, Thomas and Richter, Carsten and Schmidbauer, Martin and Skibitzki, Oliver and Schroeder, Thomas and Schmidt, Peer and Boeck, Torsten}, title = {In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates}, series = {Nano Futures}, volume = {4}, journal = {Nano Futures}, number = {3}, issn = {2399-1984}, doi = {10.1088/2399-1984/ab82a0}, pages = {1 -- 8}, abstract = {Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm-2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si-Au droplets with SixGe1-x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.}, language = {en} } @misc{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Praseodymium silicate layers with atomically abrupt interface on Si(100)}, series = {Applied Physics Letters}, volume = {87}, journal = {Applied Physics Letters}, number = {5}, issn = {0003-6951}, pages = {S. 092901}, language = {en} } @article{LupinaSchroederSchmeisseretal., author = {Lupina, Grzegorz and Schroeder, Thomas and Schmeißer, Dieter and Dabrowski, Jarek Marek}, title = {Praseodymium Silicate Films on Si(100) for Gate Dielectric Applications: Physical and Electrical Characterization}, language = {en} } @misc{SchroederLupinaSeifarthetal., author = {Schroeder, Thomas and Lupina, Grzegorz and Seifarth, Olaf and Tallarida, Massimo and Schmeißer, Dieter}, title = {Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications}, series = {Journal of Applied Physics}, volume = {102}, journal = {Journal of Applied Physics}, number = {1}, issn = {0021-8979}, pages = {014103}, language = {en} } @misc{SchmeisserMuellerSeifarthetal., author = {Schmeißer, Dieter and M{\"u}ller, S. and Seifarth, Olaf and Dabrowski, Jarek Marek and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)}, series = {Journal of vacuum science \& technology / B}, volume = {27}, journal = {Journal of vacuum science \& technology / B}, number = {1}, pages = {271 -- 276}, language = {en} } @misc{SeifarthSchubertGiussanietal., author = {Seifarth, Olaf and Schubert, Markus Andreas and Giussani, A. and Klenov, D. O. and Schmeißer, Dieter and Schroeder, Thomas}, title = {Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure}, volume = {108}, number = {10}, issn = {1089-7550}, pages = {103709}, language = {en} }