@misc{ZhangSunLietal., author = {Zhang, Wei and Sun, Ke and Li, Biyun and Lee, Jae Young and Xie, Ya-Hong and Katzer, Jens and Schroeder, Thomas and Wei, Xinyu and Russell, Thomas P.}, title = {Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si}, series = {IEEE Transactions on Nanotechnology}, volume = {11}, journal = {IEEE Transactions on Nanotechnology}, number = {5}, issn = {1536-125X}, doi = {10.1109/TNANO.2012.2208472}, pages = {999 -- 1003}, language = {en} } @misc{BertaudSowinskaWalczyketal., author = {Bertaud, Thomas and Sowinska, Małgorzata and Walczyk, Damian and Thiess, Sebastian and Walczyk, Christian and Gloskovski, A. and Drube, W. and Schroeder, Thomas}, title = {In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy}, series = {Applied Physics Letters}, volume = {112}, journal = {Applied Physics Letters}, number = {4}, pages = {043506 -- 043511}, language = {en} } @misc{BertaudWalczykSowinskaetal., author = {Bertaud, Thomas and Walczyk, Damian and Sowinska, Małgorzata and Wolansky, Dirk and Tillack, Bernd and Schoof, Gunther and Korolevych, R. and Wenger, Christian and Thiess, Sebastian and Schroeder, Thomas and Walczyk, Christian}, title = {HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {4}, issn = {1938-6737}, pages = {21 -- 26}, language = {en} } @misc{FroehlichJančovičHudeketal., author = {Froehlich, K. and Jančovič, P. and Hudek, B. and D{\´e}rer, J. and Paskaleva, A. and Bertaud, Thomas and Schroeder, Thomas}, title = {Atomic layer deposition of thin oxide films for resistive switching}, series = {Electrochemical Society (ECS) Transactions}, volume = {58}, journal = {Electrochemical Society (ECS) Transactions}, number = {10}, issn = {1938-6737}, doi = {10.1149/05810.0163ecst}, pages = {163 -- 170}, language = {en} } @misc{LangeErnstTeubneretal., author = {Lange, Felix and Ernst, Owen C. and Teubner, Thomas and Richter, Carsten and Schmidbauer, Martin and Skibitzki, Oliver and Schroeder, Thomas and Schmidt, Peer and Boeck, Torsten}, title = {In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates}, series = {Nano Futures}, volume = {4}, journal = {Nano Futures}, number = {3}, issn = {2399-1984}, doi = {10.1088/2399-1984/ab82a0}, pages = {1 -- 8}, abstract = {Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm-2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si-Au droplets with SixGe1-x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.}, language = {en} } @misc{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Praseodymium silicate layers with atomically abrupt interface on Si(100)}, series = {Applied Physics Letters}, volume = {87}, journal = {Applied Physics Letters}, number = {5}, issn = {0003-6951}, pages = {S. 092901}, language = {en} } @article{LupinaSchroederSchmeisseretal., author = {Lupina, Grzegorz and Schroeder, Thomas and Schmeißer, Dieter and Dabrowski, Jarek Marek}, title = {Praseodymium Silicate Films on Si(100) for Gate Dielectric Applications: Physical and Electrical Characterization}, language = {en} } @misc{SchroederLupinaSeifarthetal., author = {Schroeder, Thomas and Lupina, Grzegorz and Seifarth, Olaf and Tallarida, Massimo and Schmeißer, Dieter}, title = {Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications}, series = {Journal of Applied Physics}, volume = {102}, journal = {Journal of Applied Physics}, number = {1}, issn = {0021-8979}, pages = {014103}, language = {en} } @misc{SchmeisserMuellerSeifarthetal., author = {Schmeißer, Dieter and M{\"u}ller, S. and Seifarth, Olaf and Dabrowski, Jarek Marek and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)}, series = {Journal of vacuum science \& technology / B}, volume = {27}, journal = {Journal of vacuum science \& technology / B}, number = {1}, pages = {271 -- 276}, language = {en} } @misc{SeifarthSchubertGiussanietal., author = {Seifarth, Olaf and Schubert, Markus Andreas and Giussani, A. and Klenov, D. O. and Schmeißer, Dieter and Schroeder, Thomas}, title = {Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure}, volume = {108}, number = {10}, issn = {1089-7550}, pages = {103709}, language = {en} } @inproceedings{SeifarthWilkeWalczyketal., author = {Seifarth, Olaf and Wilke, A. and Walczyk, Christian and Dabrowski, Jarek Marek and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {Band gap and electronic structure determination with XAS and UPS of thin Pr-oxide films on Si(111)}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {285 -- 286}, language = {en} } @misc{CapelliniDeSetaZaumseiletal., author = {Capellini, Giovanni and De Seta, Monica and Zaumseil, Peter and Kozłowski, Grzegorz and Schroeder, Thomas}, title = {High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3702443}, language = {en} } @misc{KozłowskiZaumseilSchubertetal., author = {Kozłowski, Grzegorz and Zaumseil, Peter and Schubert, Markus Andreas and Yamamoto, Yuji and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {11}, issn = {0957-4484}, doi = {10.1088/0957-4484/23/11/115704}, pages = {115704 -- 115711}, language = {en} } @misc{SkibitzkiHatamiYamamotoetal., author = {Skibitzki, Oliver and Hatami, Fariba and Yamamoto, Yuji and Zaumseil, Peter and Trampert, A. and Schubert, Markus Andreas and Tillack, Bernd and Schroeder, Thomas}, title = {GaP collector development for SiGe HBT performance increase: A heterostructure growth study}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3701583}, pages = {073515 -- 073515-9}, language = {en} } @misc{TarnawskaZaumseilSchubertetal., author = {Tarnawska, Lidia Lupina and Zaumseil, Peter and Schubert, Markus Andreas and Okur, S. and Morkoc, H. and Paszkiewicz, R. and Storck, Peter and Schroeder, Thomas}, title = {Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111)}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3699201}, pages = {073509 -- 073509-4}, language = {en} } @misc{WangZhangLiangetal., author = {Wang, Pu and Zhang, Wei and Liang, Owen and Pantoja, Marcos and Katzer, Jens and Schroeder, Thomas and Xie, Ya-Hong}, title = {Giant enhancement and anomalous behavior of Graphene Raman spectra on plasmonic nanostructures}, series = {ACS Nano}, volume = {6}, journal = {ACS Nano}, number = {7}, issn = {1936-086X}, pages = {6244 -- 6249}, language = {en} } @misc{PieperDerksZoellneretal., author = {Pieper, H. H. and Derks, C. and Z{\"o}llner, Marvin Hartwig and Olbrich, R. and Troeger, L. and Schroeder, Thomas and Neumann, M. and Reichling, M.}, title = {Morphology and nanostructure of CeO2(111) surfaces of single crystals and of Si(111) supported ceria films,}, series = {Physical Chemistry Chemical Physics}, volume = {14}, journal = {Physical Chemistry Chemical Physics}, number = {44}, issn = {1463-9084}, doi = {10.1039/C2CP42733H}, pages = {15361 -- 15368}, language = {en} } @misc{ZoellnerZaumseilWilkensetal., author = {Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Wilkens, Henrik and Gevers, Sebastian and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Xie, Ya-Hong and Niu, Gang and Schroeder, Thomas}, title = {Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111)}, series = {Journal of Crystal Growth}, volume = {355}, journal = {Journal of Crystal Growth}, number = {1}, issn = {0022-0248}, pages = {159 -- 165}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Bauer, J. and Schubert, Markus Andreas and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy - a case study for lattice mismatched semiconductor integration on Si(001)}, series = {Journal of Applied Physics}, volume = {112}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043506 -- 043511}, language = {en} } @misc{ZaumseilKozłowskiSchubertetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Schubert, Markus Andreas and Yamamoto, Yuji and Bauer, J. and Sch{\"u}lli, Tobias U. and Tillack, Bernd and Schroeder, Thomas}, title = {The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars}, series = {Nanotechnology}, volume = {23}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, pages = {355706}, language = {en} } @misc{KozłowskiFursenkoZaumseiletal., author = {Kozłowski, Grzegorz and Fursenko, Oksana and Zaumseil, Peter and Schroeder, Thomas and Vorderwestner, M. and Storck, Peter}, title = {The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {9}, issn = {1938-6737}, pages = {613 -- 621}, language = {en} } @misc{BauerYamamotoZaumseiletal., author = {Bauer, J. and Yamamoto, Yuji and Zaumseil, Peter and Fursenko, Oksana and Schulz, K. and Kozłowski, Grzegorz and Schubert, Markus Andreas and Schroeder, Thomas and Tillack, Bernd}, title = {Nanostructured Silicon for Ge Nanoheteroepitaxy}, series = {Microelectronics Engineering}, volume = {97}, journal = {Microelectronics Engineering}, issn = {0167-9317}, pages = {169 -- 172}, language = {en} } @misc{CapelliniKozłowskiYamamotoetal., author = {Capellini, Giovanni and Kozłowski, Grzegorz and Yamamoto, Yuji and Lisker, Marco and Tillack, Bernd and Ghrib, A. and Kersauson, M. de and El Kurdi, M. and Boucaud, P. and Schroeder, Thomas}, title = {Tensile strained Ge layers obtained via Si-CMOS compatible approach}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {1}, pages = {013513-1 -- 013513-6}, language = {en} } @misc{VirgilioManganelliGrossoetal., author = {Virgilio, Michele and Manganelli, Constanza Lucia and Grosso, G. and Schroeder, Thomas and Capellini, Giovanni}, title = {Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers}, series = {Journal of Applied Physics}, volume = {114}, journal = {Journal of Applied Physics}, number = {24}, issn = {0021-8979}, pages = {243102 -- 243102-11}, language = {en} } @misc{WilkensRodewaldGeversetal., author = {Wilkens, Henrik and Rodewald, Jari and Gevers, Sebastian and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Surface morphology of ultra-thin hex-Pr2O3 films on Si(111)}, series = {Journal of Physics : D, Applied Physics}, volume = {46}, journal = {Journal of Physics : D, Applied Physics}, number = {28}, issn = {0022-3727}, pages = {285306 -- 285313}, language = {en} } @misc{WangLiangZhangetal., author = {Wang, P. and Liang, O. and Zhang, Wei and Schroeder, Thomas and Xie, Y. H.}, title = {Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection}, series = {Advanced Materials}, volume = {25}, journal = {Advanced Materials}, number = {35}, issn = {1521-4095}, pages = {4918 -- 4924}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Schubert, Markus Andreas and Schroeder, Thomas}, title = {X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates}, series = {Journal of Applied Crystallography}, volume = {46}, journal = {Journal of Applied Crystallography}, number = {4}, issn = {0021-8898}, pages = {868 -- 873}, language = {en} } @misc{NiuZaumseilSchubertetal., author = {Niu, Gang and Zaumseil, Peter and Schubert, Markus Andreas and Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Schroeder, Thomas}, title = {Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, pages = {011906-1 -- 011906-5}, language = {en} } @misc{NiermannZenglerTarnawskaetal., author = {Niermann, T. and Zengler, D. and Tarnawska, Lidia Lupina and Storck, Peter and Schroeder, Thomas}, title = {Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM Characterization of growth defects}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {22}, issn = {0021-8979}, pages = {223501 -- 223501-8}, language = {en} } @misc{WilkensSchuckmannOelkeetal., author = {Wilkens, Henrik and Schuckmann, O. and Oelke, R. and Gevers, Sebastian and Schaefer, A. and B{\"a}umer, Marcus and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Stabilization of the ceria Jota-phase Ce7O12 surface on Si(111)}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, number = {11}, issn = {0003-6951}, pages = {111602-1 -- 111602-3}, language = {en} } @misc{WilkensSchuckmannOelkeetal., author = {Wilkens, Henrik and Schuckmann, O. and Oelke, R. and Gevers, Sebastian and Reichling, M. and Schaefer, A. and B{\"a}umer, Marcus and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Structural transitions of epitaxial ceria films on Si(111)}, series = {Physical Chemistry Chemical Physics}, volume = {15}, journal = {Physical Chemistry Chemical Physics}, number = {42}, issn = {1463-9084}, pages = {18589 -- 18599}, language = {en} } @inproceedings{SeifarthWalczykLupinaetal., author = {Seifarth, Olaf and Walczyk, Christian and Lupina, Grzegorz and Dabrowski, Jaroslaw and Weidner, G{\"u}nter and Zaumseil, Peter and Schmeißer, Dieter and Storck, Peter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 196}, abstract = {For the integration of 100 \% Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO2 is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO2 and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO2 layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements.}, language = {en} } @inproceedings{SeifarthWalczykLupinaetal., author = {Seifarth, Olaf and Walczyk, Christian and Lupina, Grzegorz and Zaumseil, Peter and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Schroeder, Thomas}, title = {The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 136}, abstract = {Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure.}, language = {en} } @inproceedings{DudekLupinaKozłowskietal., author = {Dudek, Peter and Lupina, Grzegorz and Kozłowski, Grzegorz and Dabrowski, Jarek Marek and Lippert, Gunther and M{\"u}ssig, Hans-Joachim and Schmeißer, Dieter and Schroeder, Thomas}, title = {Band structure and electrical properties of MBE grown HfO2 - based alkaline earth perovskites}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 232}, abstract = {Ultra thin dielectric films (<20 nm) deposited on TiN electrodes are interesting for MIM capacitor application. High capacitance density and dielectric permittivity must be accompanied by extremely low leakage currents (10-8 A/cm2) at bias 0.5 V. To achieve such low leakage currents, high band gap and proper band alignment is required. Occupied electronic states can be probed with standard laboratory photoemission methods. Probing of unoccupied states is more challenging. Synchrotron based PES in combination with XAS forms a powerful method to study the band alignment. ASAM end station located at the U 49/2 PGM 2 beamline of BESSY II (Berlin) offers excellent conditions for performing such measurements. We investigated HfO2 - based alkaline earth perovskite - BaHfO3 with subsequent admixture of TiO2, resulting in formation of BaHf0.5Ti0.5O3 compound. The analysis of data indicates that band gap for HfO2 is similar to BaHfO3 and amounts 5.8 eV; for BaHf0.5Ti0.5O3 it decreases to 3.8 eV. We conclude that the addition of TiO2 to BaHfO3 increases significantly the dielectric permittivity but also impacts the band gap alignment. The conduction band offset shrinks, influencing the leakage current behavior.}, language = {en} } @misc{OlbrichWilkensOelkeetal., author = {Olbrich, R. and Wilkens, Henrik and Oelke, R. and Wollschl{\"a}ger, Joachim and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Reichling, M.}, title = {A well-structured metastable ceria surface}, series = {Applied Physics Letters}, volume = {104}, journal = {Applied Physics Letters}, number = {8}, doi = {10.1063/1.4866667}, pages = {081910-1 -- 081910-4}, language = {en} } @misc{SchaeferWendtMantletal., author = {Sch{\"a}fer, Anna and Wendt, Fabian and Mantl, Siegfried and Hartdegen, Hilde and Mikulics, Martin and Schubert, J{\"u}rgen and Luysberg, Martina and Besmehn, Astrid and Niu, Gang and Schroeder, Thomas}, title = {Hexagonal LaLuO3 as high-k dielectric}, series = {Journal of Vacuum Science and Technology : B}, volume = {33}, journal = {Journal of Vacuum Science and Technology : B}, doi = {10.1116/1.4904401}, pages = {01A104}, language = {en} } @misc{DiGaspareSabbaghDeSetaetal., author = {Di Gaspare, L. and Sabbagh, D. and De Seta, Monica and Sodo, A. and Wirths, S. and Buca, Dan and Zaumseil, Peter and Schroeder, Thomas and Capellini, Giovanni}, title = {A very low temperature epi-cleaning process for Ge / GeSn heterostructures}, series = {Journal of Applied Physics}, volume = {117}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4906616}, pages = {045306}, language = {en} } @misc{TaokaAsanoYamahaetal., author = {Taoka, Noriyuki and Asano, Takanori and Yamaha, Takashi and Terashima, Tatsuya and Nakatsuka, Osamu and Costina, Ioan and Zaumseil, Peter and Capellini, Giovanni and Zaima, Shigeaki and Schroeder, Thomas}, title = {Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4908121}, pages = {061107-1 -- 061107-5}, language = {en} } @misc{ChahineZoellnerRichardetal., author = {Chahine, Gilbert A. and Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Subhajit, G. and Zaumseil, Peter and Capellini, Giovanni and Schroeder, Thomas and Sch{\"u}lli, Tobias U.}, title = {Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4909529}, pages = {071902-1 -- 071902-4}, language = {en} } @misc{WirthsTroitschMussleretal., author = {Wirths, S. and Troitsch, R. and Mussler, G. and Stoica, T. and Hartmann, J.-M. and Zaumseil, Peter and Schroeder, Thomas and Mantl, Siegfried and Buca, Dan}, title = {Ternary and Quaternary Ni(Si)GeSn Contact Formation for highly strained Ge p- and n-MOSFETs}, series = {Semiconductor Science and Technology}, volume = {30}, journal = {Semiconductor Science and Technology}, number = {5}, issn = {0268-1242}, doi = {10.1088/0268-1242/30/5/055003}, pages = {055003}, language = {en} } @misc{KalettaWipfFraschkeetal., author = {Kaletta, Udo Christian and Wipf, Christian and Fraschke, Mirko and Wolansky, Dirk and Schubert, Markus Andreas and Schroeder, Thomas and Wenger, Christian}, title = {AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss}, series = {IEEE Transactions on Electron Devices}, volume = {62}, journal = {IEEE Transactions on Electron Devices}, number = {3}, issn = {0018-9383}, doi = {10.1109/TED.2015.2395443}, pages = {764 -- 768}, language = {en} } @misc{WilkensSpiessZoellneretal., author = {Wilkens, Henrik and Spieß, Wanja and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Post deposition annealing of epitaxial Ce1-xPrxO2-δ films grown on Si(111)}, series = {Physical Chemistry Chemical Physics}, volume = {17}, journal = {Physical Chemistry Chemical Physics}, issn = {1463-9084}, doi = {10.1039/C6CP01553K}, pages = {9991 -- 9996}, language = {en} } @misc{GrossiWalczykZambellietal., author = {Grossi, Alessandro and Walczyk, Damian and Zambelli, Cristian and Miranda, Enrique and Olivo, Piero and Stikanov, V. and Feriani, A. and Sune, J. and Schoof, Gunther and Kraemer, Rolf and Tillack, Bernd and Fox, A. and Schroeder, Thomas and Walczyk, Christian}, title = {Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays}, series = {IEEE Transaction on Electronic Devices}, volume = {62}, journal = {IEEE Transaction on Electronic Devices}, number = {8}, issn = {0018-9383}, doi = {10.1109/TED.2015.2442412}, pages = {2502 -- 2509}, language = {en} } @misc{ZoellnerRichardChahineetal., author = {Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Chahine, Gilbert A. and Zaumseil, Peter and Reich, Christian and Capellini, Giovanni and Montalenti, Francesco and Marzegalli, Anna and Xie, Ya-Hong and Sch{\"u}lli, Tobias U. and H{\"a}berlen, Maik and Storck, Peter and Schroeder, Thomas}, title = {Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {17}, issn = {1944-8252}, doi = {10.1021/am508968b}, pages = {9031 -- 9037}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, M. and Capellini, Giovanni and Skibitzki, Oliver and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas}, title = {Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/35/355707}, pages = {355707}, language = {en} } @misc{SchaeferRahmanizadehBihlmayeretal., author = {Sch{\"a}fer, Anna and Rahmanizadeh, K. and Bihlmayer, G. and Luysberg, Martina and Wendt, Fabian and Besmehn, Astrid and Fox, A. and Schnee, M. and Niu, Gang and Schroeder, Thomas and Mantl, Siegfried and Hartdegen, Hilde and Mikulics, Martin and Schubert, J{\"u}rgen}, title = {Polymorphous GdScO3 as high permittivity dielectric}, series = {Journal of Alloy and Compunds}, volume = {651}, journal = {Journal of Alloy and Compunds}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2015.08.135}, pages = {514 -- 520}, language = {en} } @misc{SalvalaglioBergamaschiniIsaetal., author = {Salvalaglio, Marco and Bergamaschini, Roberto and Isa, Fabio and Scaccabarozi, Andrea and Isella, Giovanni and Backofen, Rainer and Voigt, Axel and Montalenti, Francesco and Capellini, Giovanni and Marzegalli, Anna and Schroeder, Thomas and K{\"a}nel, Hans von and Miglio, Leo}, title = {Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {34}, issn = {1944-8244}, doi = {10.1021/acsami.5b05054}, pages = {19219 -- 19225}, language = {en} } @inproceedings{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim}, title = {Ti-doping of Pr silicate layers for high-k dielectrics applications}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Near-term downscaling of the metal-oxide-semiconductor field-effect transistors (MOSFETs) requires the replacement of the SiO2 gate oxide with a material having a higher dielectric constant. Recent studies indicate that silicate materials are the most promising candidates; among them are Pr silicates. Applying a combination of x-ray photoelectron spectroscopy (XPS), electrical measurements (C-V), and ab initio calculations, we investigated the effect of thin Ti doping on the structural and electrical properties of the gate stacks composed of a Pr silicate film and a SiO2-based interfacial buffer layer. Metallic Ti was deposited at room temperature after the formation of the Pr silicate dielectric. The resulting layered structures were annealed under ultra-high vacuum (UHV) at various temperatures between 70∘C and 880∘C. XPS indicates that the evaporated layer preserves its metallic character over the whole range of UHV annealing temperatures. Synchrotron radiation XPS at BESSY II shows that large amounts of Ti atoms incorporated into the Pr silicate remain metallic even after air exposure at room temperature. Annealing in nitrogen ambient at 300∘C leads to the oxidation of these atoms so that a mixed Pr:Ti silicate is formed. We show that the so formed dielectrics exhibit an improved equivalent oxide thickness and a reduced density of interface states.}, language = {en} } @misc{YangMazetOkatanetal., author = {Yang, Sang Mo and Mazet, Lucie and Okatan, M. Baris and Jesse, Stephen and Niu, Gang and Schroeder, Thomas and Schamm-Chardon, Sylvie and Dubourdieu, Catherine and Baddorf, Arthur P. and Kalinin, Sergei V.}, title = {Decoupling indirect topographic cross-talk in band excitation piezoresponse force microscopy imaging and spectroscopy}, series = {Applied Physics Letters}, volume = {108}, journal = {Applied Physics Letters}, number = {25}, issn = {1077-3118}, doi = {10.1063/1.4954276}, pages = {252902}, language = {en} } @misc{SchlykowKlesseNiuetal., author = {Schlykow, Viktoria and Klesse, Wolfgang Matthias and Niu, Gang and Taoka, Noriyuki and Yamamoto, Yuji and Skibitzki, Oliver and Barget, M. R. and Zaumseil, Peter and K{\"a}nel, Hans von and Schubert, Markus Andreas and Capellini, Giovanni and Schroeder, Thomas}, title = {Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)}, series = {Applied Physics Letters}, volume = {109}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4967500}, pages = {202102}, language = {en} }