@misc{ZhangSunLietal., author = {Zhang, Wei and Sun, Ke and Li, Biyun and Lee, Jae Young and Xie, Ya-Hong and Katzer, Jens and Schroeder, Thomas and Wei, Xinyu and Russell, Thomas P.}, title = {Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si}, series = {IEEE Transactions on Nanotechnology}, volume = {11}, journal = {IEEE Transactions on Nanotechnology}, number = {5}, issn = {1536-125X}, doi = {10.1109/TNANO.2012.2208472}, pages = {999 -- 1003}, language = {en} } @misc{BertaudSowinskaWalczyketal., author = {Bertaud, Thomas and Sowinska, Małgorzata and Walczyk, Damian and Thiess, Sebastian and Walczyk, Christian and Gloskovski, A. and Drube, W. and Schroeder, Thomas}, title = {In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by Hard X-ray Photoelectron Spectroscopy}, series = {Applied Physics Letters}, volume = {112}, journal = {Applied Physics Letters}, number = {4}, pages = {043506 -- 043511}, language = {en} } @misc{BertaudWalczykSowinskaetal., author = {Bertaud, Thomas and Walczyk, Damian and Sowinska, Małgorzata and Wolansky, Dirk and Tillack, Bernd and Schoof, Gunther and Korolevych, R. and Wenger, Christian and Thiess, Sebastian and Schroeder, Thomas and Walczyk, Christian}, title = {HfO2-based RRAM for Embedded Nonvolatile Memory: From Materials Science to Integrated 1T1R RRAM Arrays}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {4}, issn = {1938-6737}, pages = {21 -- 26}, language = {en} } @misc{FroehlichJančovičHudeketal., author = {Froehlich, K. and Jančovič, P. and Hudek, B. and D{\´e}rer, J. and Paskaleva, A. and Bertaud, Thomas and Schroeder, Thomas}, title = {Atomic layer deposition of thin oxide films for resistive switching}, series = {Electrochemical Society (ECS) Transactions}, volume = {58}, journal = {Electrochemical Society (ECS) Transactions}, number = {10}, issn = {1938-6737}, doi = {10.1149/05810.0163ecst}, pages = {163 -- 170}, language = {en} } @misc{LangeErnstTeubneretal., author = {Lange, Felix and Ernst, Owen and Teubner, Thomas and Richter, Carsten and Schmidbauer, Martin and Skibitzki, Oliver and Schroeder, Thomas and Schmidt, Peer and Boeck, Torsten}, title = {In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates}, series = {Nano Futures}, volume = {4}, journal = {Nano Futures}, number = {3}, issn = {2399-1984}, doi = {10.1088/2399-1984/ab82a0}, pages = {1 -- 8}, abstract = {Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm-2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si-Au droplets with SixGe1-x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.}, language = {en} } @misc{SeifarthSchubertGiussanietal., author = {Seifarth, Olaf and Schubert, Markus Andreas and Giussani, A. and Klenov, D. O. and Schmeißer, Dieter and Schroeder, Thomas}, title = {Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure}, volume = {108}, number = {10}, issn = {1089-7550}, pages = {103709}, language = {en} } @misc{CapelliniDeSetaZaumseiletal., author = {Capellini, Giovanni and De Seta, Monica and Zaumseil, Peter and Kozłowski, Grzegorz and Schroeder, Thomas}, title = {High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3702443}, language = {en} } @misc{TarnawskaZaumseilSchubertetal., author = {Tarnawska, Lidia Lupina and Zaumseil, Peter and Schubert, Markus Andreas and Okur, S. and Morkoc, H. and Paszkiewicz, R. and Storck, Peter and Schroeder, Thomas}, title = {Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111)}, series = {Journal of Applied Physics}, volume = {111}, journal = {Journal of Applied Physics}, number = {7}, issn = {0021-8979}, doi = {10.1063/1.3699201}, pages = {073509 -- 073509-4}, language = {en} } @misc{WangZhangLiangetal., author = {Wang, Pu and Zhang, Wei and Liang, Owen and Pantoja, Marcos and Katzer, Jens and Schroeder, Thomas and Xie, Ya-Hong}, title = {Giant enhancement and anomalous behavior of Graphene Raman spectra on plasmonic nanostructures}, series = {ACS Nano}, volume = {6}, journal = {ACS Nano}, number = {7}, issn = {1936-086X}, pages = {6244 -- 6249}, language = {en} } @misc{KozłowskiFursenkoZaumseiletal., author = {Kozłowski, Grzegorz and Fursenko, Oksana and Zaumseil, Peter and Schroeder, Thomas and Vorderwestner, M. and Storck, Peter}, title = {The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers}, series = {ECS transactions}, volume = {50}, journal = {ECS transactions}, number = {9}, issn = {1938-6737}, pages = {613 -- 621}, language = {en} } @misc{VirgilioManganelliGrossoetal., author = {Virgilio, Michele and Manganelli, Constanza Lucia and Grosso, G. and Schroeder, Thomas and Capellini, Giovanni}, title = {Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers}, series = {Journal of Applied Physics}, volume = {114}, journal = {Journal of Applied Physics}, number = {24}, issn = {0021-8979}, pages = {243102 -- 243102-11}, language = {en} } @misc{WangLiangZhangetal., author = {Wang, P. and Liang, O. and Zhang, Wei and Schroeder, Thomas and Xie, Y. H.}, title = {Ultra-Sensitive Graphene-Plasmonic Hybrid Platform for Label-Free Detection}, series = {Advanced Materials}, volume = {25}, journal = {Advanced Materials}, number = {35}, issn = {1521-4095}, pages = {4918 -- 4924}, language = {en} } @misc{ZaumseilKozłowskiYamamotoetal., author = {Zaumseil, Peter and Kozłowski, Grzegorz and Yamamoto, Yuji and Schubert, Markus Andreas and Schroeder, Thomas}, title = {X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates}, series = {Journal of Applied Crystallography}, volume = {46}, journal = {Journal of Applied Crystallography}, number = {4}, issn = {0021-8898}, pages = {868 -- 873}, language = {en} } @misc{NiermannZenglerTarnawskaetal., author = {Niermann, T. and Zengler, D. and Tarnawska, Lidia Lupina and Storck, Peter and Schroeder, Thomas}, title = {Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): TEM Characterization of growth defects}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {22}, issn = {0021-8979}, pages = {223501 -- 223501-8}, language = {en} } @misc{SchaeferWendtMantletal., author = {Sch{\"a}fer, Anna and Wendt, Fabian and Mantl, Siegfried and Hartdegen, Hilde and Mikulics, Martin and Schubert, J{\"u}rgen and Luysberg, Martina and Besmehn, Astrid and Niu, Gang and Schroeder, Thomas}, title = {Hexagonal LaLuO3 as high-k dielectric}, series = {Journal of Vacuum Science and Technology : B}, volume = {33}, journal = {Journal of Vacuum Science and Technology : B}, doi = {10.1116/1.4904401}, pages = {01A104}, language = {en} } @misc{DiGaspareSabbaghDeSetaetal., author = {Di Gaspare, L. and Sabbagh, D. and De Seta, Monica and Sodo, A. and Wirths, S. and Buca, Dan and Zaumseil, Peter and Schroeder, Thomas and Capellini, Giovanni}, title = {A very low temperature epi-cleaning process for Ge / GeSn heterostructures}, series = {Journal of Applied Physics}, volume = {117}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4906616}, pages = {045306}, language = {en} } @misc{TaokaAsanoYamahaetal., author = {Taoka, Noriyuki and Asano, Takanori and Yamaha, Takashi and Terashima, Tatsuya and Nakatsuka, Osamu and Costina, Ioan and Zaumseil, Peter and Capellini, Giovanni and Zaima, Shigeaki and Schroeder, Thomas}, title = {Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4908121}, pages = {061107-1 -- 061107-5}, language = {en} } @misc{WirthsTroitschMussleretal., author = {Wirths, S. and Troitsch, R. and Mussler, G. and Stoica, T. and Hartmann, J.-M. and Zaumseil, Peter and Schroeder, Thomas and Mantl, Siegfried and Buca, Dan}, title = {Ternary and Quaternary Ni(Si)GeSn Contact Formation for highly strained Ge p- and n-MOSFETs}, series = {Semiconductor Science and Technology}, volume = {30}, journal = {Semiconductor Science and Technology}, number = {5}, issn = {0268-1242}, doi = {10.1088/0268-1242/30/5/055003}, pages = {055003}, language = {en} } @misc{KalettaWipfFraschkeetal., author = {Kaletta, Udo Christian and Wipf, Christian and Fraschke, Mirko and Wolansky, Dirk and Schubert, Markus Andreas and Schroeder, Thomas and Wenger, Christian}, title = {AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss}, series = {IEEE Transactions on Electron Devices}, volume = {62}, journal = {IEEE Transactions on Electron Devices}, number = {3}, issn = {0018-9383}, doi = {10.1109/TED.2015.2395443}, pages = {764 -- 768}, language = {en} } @misc{SchaeferRahmanizadehBihlmayeretal., author = {Sch{\"a}fer, Anna and Rahmanizadeh, K. and Bihlmayer, G. and Luysberg, Martina and Wendt, Fabian and Besmehn, Astrid and Fox, A. and Schnee, M. and Niu, Gang and Schroeder, Thomas and Mantl, Siegfried and Hartdegen, Hilde and Mikulics, Martin and Schubert, J{\"u}rgen}, title = {Polymorphous GdScO3 as high permittivity dielectric}, series = {Journal of Alloy and Compunds}, volume = {651}, journal = {Journal of Alloy and Compunds}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2015.08.135}, pages = {514 -- 520}, language = {en} }