@inproceedings{BakalskiScholtzVasylyevetal., author = {Bakalski, Winfried and Scholtz, A. L. and Vasylyev, Andriy and Weger, Peter and Simb{\"u}rger, Werner and Th{\"u}ringer, R. and Wohlmuth, H.-D.}, title = {A Fully Integrated 7-18 GHz Power Amplifier with On-Chip Output Balun in 75 GHz-fT SiGe-Bipolar}, series = {Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE}, booktitle = {Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, Toulouse, France, 29 - 20 Sept. 2003, IEEE}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-7800-8}, pages = {61 -- 66}, language = {en} } @inproceedings{BakalskiVasylyevSimbuergeretal., author = {Bakalski, Winfried and Vasylyev, Andriy and Simb{\"u}rger, Werner and Scholtz, A. L. and Th{\"u}ringer, R.}, title = {A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-bipolar power amplifier with 50 Ohm output}, series = {Proceedings of the 29th European Solid-State Circuits Conference, Estoril, Portugal, 16 - 18 September 2003}, booktitle = {Proceedings of the 29th European Solid-State Circuits Conference, Estoril, Portugal, 16 - 18 September 2003}, isbn = {0-7803-7995-0}, pages = {561 -- 564}, language = {en} } @article{BakalskiWegerIlkovetal., author = {Bakalski, Winfried and Weger, Peter and Ilkov, N. and Scholtz, A. L. and Dernovsek, N. and Matz, R. and Simb{\"u}rger, Werner}, title = {A 5-6.5GHz LTCC Power Amplifier Module with 0.3W at 2.4V in Si-bipolar}, language = {en} }