@misc{SchmidtKersteinNedelecetal., author = {Schmidt, Heiko and Kerstein, Alan R. and N{\´e}d{\´e}lec, Renaud and Wunsch, Scott and Sayler, Ben J.}, title = {One-dimensional turbulence simulation of a laboratory analog of radiatively induced cloud-top entrainment}, language = {en} } @inproceedings{SchmidtSchulzKerstein, author = {Schmidt, Heiko and Schulz, Falko T. and Kerstein, Alan R.}, title = {Toward modeling of multi- phase flow patterns using a combination of level sets and one-dimensional turbulence}, series = {EGU General Assembly 2011, Vienna, Austria, 03 - 08 April 2011}, booktitle = {EGU General Assembly 2011, Vienna, Austria, 03 - 08 April 2011}, language = {en} } @misc{KersteinSchmidtNedelecetal., author = {Kerstein, Alan R. and Schmidt, Heiko and N{\´e}d{\´e}lec, Renaud and Wunsch, Scott and Sayler, Ben J.}, title = {Analysis and numerical simulation of a laboratory analog of radiatively induced cloud-top entrainment}, series = {Bulletin of the American Physical Society Dynamics}, volume = {55}, journal = {Bulletin of the American Physical Society Dynamics}, number = {16}, language = {en} } @inproceedings{GlaweKleinKersteinetal., author = {Glawe, Christoph and Klein, Rupert and Kerstein, Alan R. and Schmidt, Heiko}, title = {Towards the simulation of gravity waves using the One-Dimensional Turbulence model}, series = {EGU General Assembly 2012, held 22-27 April, 2012 in Vienna}, booktitle = {EGU General Assembly 2012, held 22-27 April, 2012 in Vienna}, language = {en} } @misc{SoniaRichterBrunneretal., author = {Sonia, G. and Richter, E. and Brunner, F. and Denker, A. and Lossy, R. and Mai, M. and Lenk, Friedrich and Bundesmann, J. and Pensl, G. and Schmidt, J. and Zeimer, U. and Wang, L. and Baskar, K. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {2 MeV ion irradiation effects on AlGaN/GaN HFET devices}, series = {Solid-State Electronics}, volume = {52}, journal = {Solid-State Electronics}, number = {7}, issn = {0038-1101}, pages = {1011 -- 1017}, abstract = {AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 109 cm-2 to 1 × 1013 cm-2. DC, pulsed I-V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 1010 cm-2. Remarkable changes in device characteristics were seen at a fluence of 1 × 1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 1012 cm-2. The results found on devices and on the GaN layer were compared and correlated.}, language = {en} } @misc{GnanapragasamRichterBrunneretal., author = {Gnanapragasam, S. and Richter, E. and Brunner, F. and Denker, A. and Lossy, R. and Mai, M. and Lenk, Friedrich and Opitz-Coutureau, J. and Pensl, G. and Schmidt, J. and Zeimer, U. and Wang, L. and Krishnan, B. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {Irradiation effects on AlGaN HFET devices and GaN layers}, series = {Journal of Materials Science: Materials in Electronics}, volume = {19}, journal = {Journal of Materials Science: Materials in Electronics}, number = {1}, issn = {1573-482X}, doi = {10.1007/s10854-008-9589-1}, pages = {64 -- 67}, abstract = {AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1x107 to 1x1013 cm-2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1x1010 cm-2 resulted in a small reduction of 2\% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5x1010 cm-2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1x1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1x1012 cm-2. The device results and GaN layer properties are strongly correlated.}, language = {en} } @misc{SoniaRichterBrunneretal., author = {Sonia, G. and Richter, E. and Brunner, F. and Denker, A. and Lossy, R. and Lenk, Friedrich and Opitz-Coutureau, J. and Mai, M. and Schmidt, J. and Zeimer, U. and Wang, L. and Baskar, K. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {High energy irradiation effects on AlGaN/GaN HFET devices}, series = {Semiconductor Science and Technology}, volume = {22}, journal = {Semiconductor Science and Technology}, number = {11}, issn = {0268-1242}, doi = {10.1088/0268-1242/22/11/007}, pages = {1220 -- 1224}, abstract = {The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I - V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results.}, language = {en} } @inproceedings{MovagharLinneOevermannetal., author = {Movaghar, Amirreza and Linne, Mark and Oevermann, Michael and Meiselbach, Falko T. and Schmidt, Heiko and Kerstein, Alan R.}, title = {Numerical study of liquid breakup at the surface of turbulent liquid jets using One-Dimensional Turbulence}, series = {26th Annual Conference on Liquid Atomization and Spray Systems, ILASS, proceedings of the Conference, Bremen, Germany, 08.09.2014 - 10.09.2014}, booktitle = {26th Annual Conference on Liquid Atomization and Spray Systems, ILASS, proceedings of the Conference, Bremen, Germany, 08.09.2014 - 10.09.2014}, address = {Bremen}, isbn = {978-3-00-047070-7}, abstract = {This paper presents an investigation of primary breakup of planar turbulent liquid jets and breakup properties at the surface of turbulent jets in still air at standard conditions. Numerical simulations are carried out for jet exit Reynolds number 23000 and Weber numbers in the range [102-107]. Due to the limitation of direct numerical simulation (DNS) to moderate Reynolds numbers, a stochastic 1D ansatz based on the one-dimensional turbulence (ODT) model is used to simulate a planar liquid jet with a high lateral resolution. ODT permits an affordable high resolution of interface and single-phase property gradients which are key for understanding the local behavior. ODT is a stochastic model simulating turbulent flow evolution along a notional 1D line of sight by applying instantaneous maps to represent the effect of individual turbulent eddies on property profiles. The most relevant mechanisms that influence the primary breakup of liquid jets are found to be represented accurately based on comparisons to experiments and correlations reported in the literature. Building on this finding, future work will focus on the statistics of droplets generated by primary breakup, both to investigate their relationship to breakup mechanisms and to provide input to models of secondary breakup and subsequent spray evolution.}, language = {en} } @inproceedings{GlaweSchmidtKerstein, author = {Glawe, Christoph and Schmidt, Heiko and Kerstein, Alan R.}, title = {ODTLES: Mulitscale turbulence modeling and buoyant application}, series = {Book of abstracts, 7th European Postgraduate Fluid Dynamics Conference, Ilmenau, Germany, 14th - 17th, July 2014}, booktitle = {Book of abstracts, 7th European Postgraduate Fluid Dynamics Conference, Ilmenau, Germany, 14th - 17th, July 2014}, address = {Ilmenau}, pages = {S.46}, language = {en} } @misc{JozefikKersteinSchmidtetal., author = {Jozefik, Zoltan and Kerstein, Alan R. and Schmidt, Heiko and Lyra, Sgouria and Kolla, Hemanth and Chen, Jackie H.}, title = {One-dimensional turbulence modeling of a turbulent counterflow flame with comparison to DNS}, series = {Combustion and Flame}, volume = {162}, journal = {Combustion and Flame}, number = {8}, issn = {1556-2921}, pages = {2999 -- 3015}, language = {en} } @misc{SchmidtGlaweJozefiketal., author = {Schmidt, Heiko and Glawe, Christoph and Jozefik, Zoltan and Meiselbach, Falko T. and Kerstein, Alan R.}, title = {On the benefits of ODT-based stochastic turbulence modeling}, series = {Proceedings in applied mathematics and mechanics : PAMM}, volume = {14}, journal = {Proceedings in applied mathematics and mechanics : PAMM}, number = {1}, issn = {1617-7061}, pages = {655 -- 656}, abstract = {We summarize the group's progress in applying, analyzing, and improving ODT and ODT-based stochastic turbulence models like ODTLES. Compared to DNS these models span a wider range of scales while compared to RANS/LES (i) the molecular effects are retained and (ii) no assumption of scale separation is made. In this regard ODTLES has more properties of DNS than of standard LES.}, language = {en} } @incollection{JozefikKersteinSchmidt, author = {Jozefik, Zoltan and Kerstein, Alan R. and Schmidt, Heiko}, title = {Towards a compressible reactive multiscale approach based on One-Dimensional Turbulence}, series = {Active Flow and Combustion Control 2014}, booktitle = {Active Flow and Combustion Control 2014}, editor = {King, Rudibert}, publisher = {Springer}, address = {Switzerland}, isbn = {978-3-319-11967-0}, pages = {197 -- 211}, abstract = {Due to its huge complexity, progress in understanding and prediction of turbulent combustion is extremely challenging. In principle, progress is possible without improved understanding through direct numerical solution (DNS) of the exact governing equations, but the wide range of spatial and temporal scales often renders it unaffordable, so coarse-grained 3D numerical simulations with subgrid parameterization of the unresolved scales are often used. This is especially problematic for multi-physics regimes such as reacting flows because much of the complexity is thus relegated to the unresolved small scales. One-Dimensional Turbulence (ODT) is an alternative stochastic model for turbulent flow simulation. It operates on a 1D spatial domain via time advancing individual flow realizations rather than ensemble-averaged quantities. The lack of spatial and temporal filtering on this 1D domain enables a physically sound multiscale treatment which is especially useful for combustion applications where, e.g., sharp interfaces or small chemical time scales have to be resolved. Lignell et al. recently introduced an efficient ODT implementation using an adaptive mesh. As all existing ODT versions it operates in the incompressible regime and thus cannot handle compressibility effects and their interactions with turbulence and chemistry which complicate the physical picture even further. In this paper we make a first step toward an extension of the ODT methodology towards an efficient compressible implementation. The necessary algorithmic changes are highlighted and preliminary results for a standard non-reactive shock tube problem as well as for a turbulent reactive case illustrate the potential of the extended approach.}, language = {en} } @inproceedings{StollbergSchmidtNamangoetal., author = {Stollberg, Christian and Schmidt, M. and Namango, Saul and Pohl, R. and Ay, Peter}, title = {Conditioning, Identification and Automatic Sorting of Plastic Automotive Parts for Productive Recycling}, series = {International Automobile Recycling Congress, IARC 2002, Geneva, Switzerland, March 13 - 15, 2002, proceedings}, booktitle = {International Automobile Recycling Congress, IARC 2002, Geneva, Switzerland, March 13 - 15, 2002, proceedings}, publisher = {ICM AG}, address = {Muri}, language = {en} } @inproceedings{StollbergNamangoSchmidtetal., author = {Stollberg, Christian and Namango, Saul and Schmidt, M. and Pohl, R. and Ay, Peter}, title = {Preparation of plastics for automatic identification as the first step in recycling of automotive parts}, series = {Proceedings of the XXII International Mineral Processing Congress, Cape Town, South Africa, 29 September - 3 October 2003}, booktitle = {Proceedings of the XXII International Mineral Processing Congress, Cape Town, South Africa, 29 September - 3 October 2003}, publisher = {South African Institute of Mining \& Meta}, address = {Marshalltown, South Africa}, language = {en} } @misc{JahnBlaudeckBaumannetal., author = {Jahn, Stephan F. and Blaudeck, Thomas and Baumann, Reinhard R. and Jakob, Alexander and Ecorchard, Petra and R{\"u}ffer, Tobias and Lang, Heinrich and Schmidt, Peer}, title = {Inkjet Printing of Conductive Silver Patterns by Using the First Aqueous Particle-Free MOD Ink without Additional Stabilizing Ligands}, series = {Chemistry of Materials}, volume = {22}, journal = {Chemistry of Materials}, number = {10}, issn = {1520-5002}, doi = {10.1021/cm9036428}, pages = {3067 -- 3071}, abstract = {The chemical and physical properties of [AgO2C(CH2OCH2)3H] (3) and its use as an aqueous, ligand-free MOD ink (MOD = metal-organic decomposition) for piezo inkjet printing is discussed. The printed, thermal, or photochemical sintered silver features are electrically conductive on glass (2.7 × 107 S m-1) and PET (PET = polyethylene terephthalate) substrates (1.1 × 107 S m-1) corresponding to 43\% and 18\% of the bulk silver conductivity. Conducted tape tests show the suitability of the ink for particularly polymer substrates. TG-MS studies demonstrate a two-step decomposition for the conversion of 3 to elemental silver. The structure of 3 in the solid state was determined by single X-ray structure determination.}, language = {en} } @misc{JahnJakobBlaudecketal., author = {Jahn, Stephan F. and Jakob, Alexander and Blaudeck, Thomas and Schmidt, Peer and Lang, Heinrich and Baumann, Reinhard R.}, title = {Inkjet printing of conductive patterns with an aqueous solution of [AgO2C(CH2OCH2)3H] without any additional stabilizing ligands}, series = {Thin Solid Films}, volume = {518}, journal = {Thin Solid Films}, number = {12}, issn = {0040-6090}, doi = {10.1016/j.tsf.2010.01.030}, pages = {3218 -- 3222}, abstract = {The use of silver(I)-2-[2-(2-methoxyethoxy)ethoxy]acetate, [AgO2C(CH2OCH2)3H], and its application as an aqueous metal-organic decomposition (MOD) inkjet ink is reported. The chemical and physical properties of the silver carboxylate and the ink formulated thereof are discussed. The ink meets all requirements of piezo driven inkjet printing. The printed features were converted into electrically conducting silver patterns by thermal or photo-thermal treatment. The conversion of [AgO2C(CH2OCH2)3H] to elemental silver follows a two-step decomposition as demonstrated by thermogravimetry-mass spectrometry (TG-MS) measurements. The measured conductivities of the printed features on glass and polyethylene-terephthalate (PET) are 2.7 × 107 S m-1 and 1.1 × 107 S m-1, respectively, which correspond to 43\% (glass) and 18\% (PET) of the bulk silver conductivity.}, language = {en} } @inproceedings{BlehOstendorfMertenetal., author = {Bleh, D. and Ostendorf, Ralf and Merten, A. and Grahmann, Jan and Schenk, Harald and Kunzer, M. and Schmidt, R. and Wagner, J.}, title = {Miniaturization of a fast tunable external cavity QCL with customized gratings and MOEMS components}, series = {International Quantum Cascade Lasers School \& Workshop (IQCLSW), Policoro, Italy}, booktitle = {International Quantum Cascade Lasers School \& Workshop (IQCLSW), Policoro, Italy}, pages = {1 -- 2}, language = {en} } @inproceedings{GlaweSchulzGonzalezJuezetal., author = {Glawe, Christoph and Schulz, Falko T. and Gonzalez-Juez, Esteban D. and Schmidt, Heiko and Kerstein, Alan R.}, title = {ODTLES Simulations of Turbulent Flows through Heated Channels and Ducts}, series = {8th International Symposium on turbulence and shear flow phenomena (TSFP8), 28-30 August 2013, Poitiers, France, vol. 2}, booktitle = {8th International Symposium on turbulence and shear flow phenomena (TSFP8), 28-30 August 2013, Poitiers, France, vol. 2}, pages = {1 -- 6}, abstract = {A widely occurring problem in fluid dynamics either in engineering or e.g. hydrology is the turbulent transport through channels and ducts. ODTLES, a stochastic based multi-scale and multi-dimensional model, is a promising tool to describe these flows even including scalar proper- ties like temperature. We are quantifying the ability of ODTLES to describe the heated channel flow with respect to the Prandtl number and the flow through squared ducts with respect to the Reynolds number.}, language = {en} }