@misc{SchmidtSchmidtTolentinoetal., author = {Schmidt, Juliana J. and Schmidt, Guilherme J. and Tolentino, Julio C. and Simoes, Eunice N. and Obongo, Angela and Tolentino, Yolanda and Coelho, Francisco A. and Landesmann, Maria C. P. P. and Fonseca, Lea M. B. and Lacerda, Glenda C. B. and Schmidt, Sergio L.}, title = {A serial SPECT-CT study in a celiac disease patient with cerebellar ataxia and psychiatric symptoms}, series = {Neurological sciences}, volume = {42}, journal = {Neurological sciences}, issn = {1590-3478}, doi = {10.1007/s10072-020-04908-2}, pages = {1545 -- 1548}, abstract = {Celiac disease (CD) is an immune-mediated systemic disorder triggered by gluten and related prolamins in genetically predisposed individuals. Here, we described a case of a 31-year-old Caucasian woman who exhibited cerebellar and psychiatric dysfunctions. The patient underwent single-photon emission computed tomography (SPECT-CT) before and after a gluten-free diet (GFD). There was an improvement in cerebellar perfusion accompanied by a remission of cerebellar manifestations. The maintenance of the psychiatric manifestations was related to the persistence of the hypoperfusion in the frontal lobes. The patient's psychiatric symptoms did not change after 4 months under a GFD in the hospital. To our knowledge, this is the first case that shows the relationship between improvement in cerebellar perfusion and remission of cerebellar clinical manifestations in a CD patient under a GFD.}, language = {en} } @inproceedings{BergCordsenHeueretal., author = {Berg, R. and Cordsen, J. and Heuer, J. and Nolte, J{\"o}rg and Oestmann, B. and Sander, M. and Schmidt, Heiko and Sch{\"o}n, F. and Schr{\"o}der-Preikschat, Wolfgang}, title = {The PEACE Family of Distributed Operating Systems}, language = {en} } @inproceedings{BergCordsenHastedtetal., author = {Berg, R. and Cordsen, J. and Hastedt, Ch. and Heuer, J. and Nolte, J{\"o}rg and Sander, M. and Schmidt, Heiko and Sch{\"o}n, F. and Schr{\"o}der-Preikschat, Wolfgang}, title = {Making Massively Parallel Systems Work}, language = {en} } @misc{SoniaRichterBrunneretal., author = {Sonia, G. and Richter, E. and Brunner, F. and Denker, A. and Lossy, R. and Mai, M. and Lenk, Friedrich and Bundesmann, J. and Pensl, G. and Schmidt, J. and Zeimer, U. and Wang, L. and Baskar, K. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {2 MeV ion irradiation effects on AlGaN/GaN HFET devices}, series = {Solid-State Electronics}, volume = {52}, journal = {Solid-State Electronics}, number = {7}, issn = {0038-1101}, pages = {1011 -- 1017}, abstract = {AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 109 cm-2 to 1 × 1013 cm-2. DC, pulsed I-V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 1010 cm-2. Remarkable changes in device characteristics were seen at a fluence of 1 × 1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 1012 cm-2. The results found on devices and on the GaN layer were compared and correlated.}, language = {en} } @misc{GnanapragasamRichterBrunneretal., author = {Gnanapragasam, S. and Richter, E. and Brunner, F. and Denker, A. and Lossy, R. and Mai, M. and Lenk, Friedrich and Opitz-Coutureau, J. and Pensl, G. and Schmidt, J. and Zeimer, U. and Wang, L. and Krishnan, B. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {Irradiation effects on AlGaN HFET devices and GaN layers}, series = {Journal of Materials Science: Materials in Electronics}, volume = {19}, journal = {Journal of Materials Science: Materials in Electronics}, number = {1}, issn = {1573-482X}, doi = {10.1007/s10854-008-9589-1}, pages = {64 -- 67}, abstract = {AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1x107 to 1x1013 cm-2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1x1010 cm-2 resulted in a small reduction of 2\% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5x1010 cm-2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1x1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1x1012 cm-2. The device results and GaN layer properties are strongly correlated.}, language = {en} } @misc{SoniaRichterBrunneretal., author = {Sonia, G. and Richter, E. and Brunner, F. and Denker, A. and Lossy, R. and Lenk, Friedrich and Opitz-Coutureau, J. and Mai, M. and Schmidt, J. and Zeimer, U. and Wang, L. and Baskar, K. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {High energy irradiation effects on AlGaN/GaN HFET devices}, series = {Semiconductor Science and Technology}, volume = {22}, journal = {Semiconductor Science and Technology}, number = {11}, issn = {0268-1242}, doi = {10.1088/0268-1242/22/11/007}, pages = {1220 -- 1224}, abstract = {The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I - V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results.}, language = {en} } @inproceedings{SchmidtEgbersRath, author = {Schmidt, J.-R. and Egbers, Christoph and Rath, H. J.}, title = {Experiments on the isothermal flow in wide spherical gaps}, language = {en} } @misc{NoackSchmidtGlaeseletal., author = {Noack, J. and Schmidt, L. and Gl{\"a}sel, H.-J. and Bauer, Monika and Kemnitz, E.}, title = {Inorganic-organic Nanocomposites Based on Sol-Gel Derived Magnesium Flouride}, language = {en} } @inproceedings{KillatSchmidtBaumgartneretal., author = {Killat, Dirk and Schmidt, J. and Baumgartner, A. and Baraniecki, Robert and Salzmann, O.}, title = {One-chip solution in 0.35 µm standard CMOS for electronic ballasts for fluorescent lamps}, language = {en} } @misc{SchmidtKersteinNedelecetal., author = {Schmidt, Heiko and Kerstein, Alan R. and N{\´e}d{\´e}lec, Renaud and Wunsch, Scott and Sayler, Ben J.}, title = {Numerical study of radiatively induced entrainment}, series = {Journal of Physics: Conference Series}, volume = {318}, journal = {Journal of Physics: Conference Series}, issn = {1742-6588}, doi = {10.1088/1742-6596/318/7/072017}, pages = {072017}, language = {en} } @misc{SchmidtKersteinNedelecetal., author = {Schmidt, Heiko and Kerstein, Alan R. and N{\´e}d{\´e}lec, Renaud and Wunsch, Scott and Sayler, Ben J.}, title = {Analysis and numerical simulation of a laboratory analog of radiatively induced cloud-top entrainment}, series = {Theoretical Computational Fluid Dynamics}, journal = {Theoretical Computational Fluid Dynamics}, issn = {1432-2250}, doi = {10.1007/s00162-012-0288-4}, pages = {19}, language = {en} } @inproceedings{JimenezMoeckSchmidt, author = {Jimenez, Carmen and Moeck, J. and Schmidt, Heiko}, title = {Comparison of transfer functions of acoustically forced planar premixed hydrogen and methane flames}, series = {13th International Conference on Numerical Combustion, April 27-29, 2011, Corfu, Greece}, booktitle = {13th International Conference on Numerical Combustion, April 27-29, 2011, Corfu, Greece}, language = {en} } @inproceedings{NedelecSchmidtWunschetal., author = {N{\´e}d{\´e}lec, Renaud and Schmidt, Heiko and Wunsch, Scott and Sayler, Ben J. and Kerstein, Alan R.}, title = {Comparison of Entrainment Rates from a Tank Experiment with Results Us- ing the One-Dimensional-Turbulence Model}, series = {EGU General Assembly 2010, held in Vienna, Austria, 02 - 07 May 2010}, booktitle = {EGU General Assembly 2010, held in Vienna, Austria, 02 - 07 May 2010}, language = {en} } @misc{KersteinSchmidtNedelecetal., author = {Kerstein, Alan R. and Schmidt, Heiko and N{\´e}d{\´e}lec, Renaud and Wunsch, Scott and Sayler, Ben J.}, title = {Analysis and numerical simulation of a laboratory analog of radiatively induced cloud-top entrainment}, series = {Bulletin of the American Physical Society Dynamics}, volume = {55}, journal = {Bulletin of the American Physical Society Dynamics}, number = {16}, language = {en} } @misc{MuellerSchwarzSchmidtetal., author = {M{\"u}ller, Carola J. and Schwarz, Ulrich and Schmidt, Peer and Schnelle, Walter and Doert, Thomas}, title = {High-Pressure Synthesis, Crystal Structure, and Properties of GdS2 with Thermodynamic Investigations in the Phase Diagram Gd-S,}, series = {Zeitschrift f{\"u}r anorganische und allgemeine Chemie}, volume = {636}, journal = {Zeitschrift f{\"u}r anorganische und allgemeine Chemie}, number = {6}, issn = {1521-3749}, doi = {10.1002/zaac.201000015}, pages = {947 -- 953}, abstract = {Gadolinium disulfide was prepared by high-pressure synthesis at 8 GPa and 1173 K. It crystallizes in the monoclinic space group P121/a1 (No. 14) with lattice parameters a = 7.879(1) {\AA}; b = 3.936(1) {\AA}, c = 7.926(1) {\AA} and β = 90.08(1)°. The crystal structure is a twofold superstructure of the aristotype ZrSSi and consists of puckered cationic [GdS]+ double slabs that are sandwiched by planar sulfur sheets containing S22- dumbbells. The thermal decomposition of GdS2 proceeds via the sulfur-deficient polysulfides GdS1.9, GdS1.85 and GdS1.77 and eventually results in the sesquisulfide Gd2S3. GdS2 is a paramagnetic semiconductor which orders antiferromagnetically at TN = 7.7(1) K. A metamagnetic transition is observed in the magnetically ordered state.}, language = {en} } @misc{GrzelaCapelliniKoczorowskietal., author = {Grzela, Tomasz and Capellini, Giovanni and Koczorowski, Wojciech and Schubert, Markus Andreas and Czajka, Ryszard and Curson, Neil J. and Heidmann, Inga and Schmidt, Thomas and Falta, Jens and Schr{\"o}der, Thomas}, title = {Growth and evolution of nickel - germanide nanonstructures on Ge(001)}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {38}, issn = {1361-6528}, pages = {385701}, language = {en} } @misc{PozarowskaPleinesPrietoetal., author = {Pozarowska, Emilia and Pleines, Linus and Prieto, Mauricio J. and Tănase, Liviu Christian and Souza Caldas, Lucas de and Tiwari, Aarti and Schmidt, Thomas and Falta, Jens and Morales, Carlos and Flege, Jan Ingo}, title = {The relation between structure sensitivity and doping of ceria(111) vs. ceria(100)}, series = {Verhandlungen der DPG}, journal = {Verhandlungen der DPG}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, abstract = {CeOx-Cu inverse catalysts have been shown to convert CO2 into valuable chemicals through catalytic hydrogenation. The catalytic activity may further be enhanced by alloying ceria with trivalent, catalytically active metals, such as Sm, promoting the formation of Ce3+ active sites. In this work, the structural and chemical properties of (111)- and (100)- oriented CeOx islands alloyed with samarium were explored by low-energy electron microscopy and X-ray photoemission electron microscopy. After Sm deposition on the as-grown CeOx islands, the near-surface region of (100)-oriented CeOx is reduced after exposure to H2 at 470 ∘C, whereas the deeper layers as well as the whole (111)-oriented islands retain the Ce4+ state. Subsequent reoxidation with O2 leads to the complete Ce4+ state recovery, suggesting the healing of oxygen vacancies. Additional annealing at 470 ∘C induces samarium diffusion into the ceria matrix. Yet, subsequent exposure to H2 reduces neither the (111)- nor the (100)-oriented CeSmOx islands, suggesting a quite unexpected stability of this system.}, language = {en} } @misc{PożarowskaPleinesEwertetal., author = {Pożarowska, Emilia and Pleines, Linus and Ewert, Moritz and Prieto, Mauricio J. and Tănase, Liviu Christian and Souza Caldas, Lucas de and Tiwari, Aarti and Schmidt, Thomas and Falta, Jens and Krasovskii, Eugene and Morales, Carlos and Flege, Jan Ingo}, title = {Preparation and stability of the hexagonal phase of samarium oxide on Ru(0001)}, series = {Ultramicroscopy}, volume = {250}, journal = {Ultramicroscopy}, issn = {0304-3991}, doi = {10.1016/j.ultramic.2023.113755}, abstract = {We have used low-energy electron microscopy (LEEM), micro-illumination low-energy electron diffraction (µLEED) supported by ab initio calculations, and X-ray absorption spectroscopy (XAS) to investigate in-situ and in real-time the structural properties of Sm2O3 deposits grown on Ru(0001), a rare-earth metal oxide model catalyst. Our results show that samarium oxide grows in a hexagonal A-Sm2O3 phase on Ru(0001), exhibiting a (0001) oriented-top facet and (113) side facets. Upon annealing, a structural transition from the hexagonal to cubic phase occurs, in which the Sm cations exhibit the +3 oxidation state. The unexpected initial growth in the A-Sm2O3 hexagonal phase and its gradual transition to a mixture with cubic C-Sm2O3 showcases the complexity of the system and the critical role of the substrate in the stabilization of the hexagonal phase, which was previously reported only at high pressures and temperatures for bulk samaria. Besides, these results highlight the potential interactions that Sm could have with other catalytic compounds with respect to the here gathered insights on the preparation conditions and the specific compounds with which it interacts.}, language = {en} } @misc{KrisponeitFischerEsseretal., author = {Krisponeit, Jon-Olaf and Fischer, Simon and Esser, Sven and Moshnyaga, Vasily and Schmidt, Thomas and Piper, Louis F. J. and Flege, Jan Ingo and Falta, Jens}, title = {The morphology of VO2/TiO2(001): terraces, facets, and cracks}, series = {Scientific Reports}, volume = {10}, journal = {Scientific Reports}, issn = {2045-2322}, doi = {10.1038/s41598-020-78584-9}, pages = {8}, abstract = {Vanadium dioxide (VO2) features a pronounced, thermally-driven metal-to-insulator transition at 340 K. Employing epitaxial stress on rutile TiO2(001) substrates, the transition can be tuned to occur close to room temperature. Striving for applications in oxide-electronic devices, the lateral homogeneity of such samples must be considered as an important prerequisite for efforts towards miniaturization. Moreover, the preparation of smooth surfaces is crucial for vertically stacked devices and, hence, the design of functional interfaces. Here, the surface morphology of VO2/TiO2(001) films was analyzed by low-energy electron microscopy and diffraction as well as scanning probe microscopy. The formation of large terraces could be achieved under temperature-induced annealing, but also the occurrence of facets was observed and characterized. Further, we report on quasi-periodic arrangements of crack defects which evolve due to thermal stress under cooling. While these might impair some applicational endeavours, they may also present crystallographically well-oriented nano-templates of bulk-like properties for advanced approaches.}, language = {en} } @misc{SchmidtKersteinNedelecetal., author = {Schmidt, Heiko and Kerstein, Alan R. and N{\´e}d{\´e}lec, Renaud and Wunsch, Scott and Sayler, Ben J.}, title = {One-dimensional turbulence simulation of a laboratory analog of radiatively induced cloud-top entrainment}, language = {en} } @inproceedings{DoynovOssenbrinkSchmidtetal., author = {Doynov, Nikolay and Ossenbrink, Ralf and Schmidt, J. and Michailov, Vesselin}, title = {Utilization of Weld Pool Models in Thermal-Mechanical Simulations}, series = {Mathematical modelling of weld phenomena 8}, booktitle = {Mathematical modelling of weld phenomena 8}, publisher = {Verl. der Techn. Univ. Graz}, address = {Graz}, isbn = {978-3-902465-69-6}, language = {en} } @inproceedings{BlehOstendorfMertenetal., author = {Bleh, D. and Ostendorf, Ralf and Merten, A. and Grahmann, Jan and Schenk, Harald and Kunzer, M. and Schmidt, R. and Wagner, J.}, title = {Miniaturization of a fast tunable external cavity QCL with customized gratings and MOEMS components}, series = {International Quantum Cascade Lasers School \& Workshop (IQCLSW), Policoro, Italy}, booktitle = {International Quantum Cascade Lasers School \& Workshop (IQCLSW), Policoro, Italy}, pages = {1 -- 2}, language = {en} } @inproceedings{RistauMeierEgbersetal., author = {Ristau, R. and Meier, M. and Egbers, Christoph and Schmidt, J.-R. and Poppe, T.}, title = {Partikelbeladene Str{\"o}mungen : Simulation und Messtechnik}, language = {de} }