@incollection{UlrichSchlegelMertensetal., author = {Ulrich, Rainer G. and Schlegel, Matthias and Mertens, Marc and Groschup, Martin H. and Schmidt-Chanasit, Jonas and Plenge-B{\"o}nig, Anita and Jacob, Jens and Pelz, Hans-Joachim and Freise, Jona and Wenk, Matthias and Thiel, J{\"o}rg and Triebenbacher, Cornelia and Schmolz, Eric and Kurth, Andreas and Kr{\"u}ger, Frank and R{\"u}he, Ferdinand and Kiffner, Christian and Ansorge, Hermann and Gerwin, Werner and Wegener, Wolfgang and M{\"u}ller, J{\"o}rg and Bemmann, Margit and Wolf, Ronny and Otto, Lutz-Florian and Oehme, Rainer and Pfeffer, Martin and Heckel, Gerald and Schex, Susanne and Essbauer, Sandra S.}, title = {Netzwerk Nagetier-{\"u}bertragene Pathogene: Monitoring von Hantavirus-Infektionen in Deutschland}, series = {Wildhygiene, Wildtierkrankheiten, Parasiten, Epidemiologie}, booktitle = {Wildhygiene, Wildtierkrankheiten, Parasiten, Epidemiologie}, publisher = {Ges. f{\"u}r Wildtier- und Jagdforschung}, address = {Halle/Saale}, isbn = {978-378-88131-2-3}, issn = {1436-3895}, pages = {229 -- 250}, language = {de} } @techreport{BeckerClareDietrichetal., author = {Becker, J{\"o}rg and Clare, Lee and Dietrich, Oliver and K{\"o}ksal-Schmidt, {\c{C}}iğdem and Merbach, Anja and Notroff, Jens and Pant, Smriti and Peters, Joris and P{\"o}llath, Nadja and Schmidt, Klaus}, title = {G{\"o}bekli Tepe Newsletter 2014}, publisher = {German Archaeological Institute, Press Office}, address = {Berlin}, pages = {27}, language = {en} } @inproceedings{BuettnerGentzschMiltzowetal., author = {B{\"u}ttner, L. and Gentzsch, W. and Miltzow, A. and Nolte, J{\"o}rg and Paap, H.-G. and Sch{\"o}n, F. and Schmidt, M.}, title = {ARTS - Optimale Ausf{\"u}hrungsunterst{\"u}tzung komplexer Anwendungen auf parallelen Systemen}, language = {en} } @inproceedings{BergCordsenHeueretal., author = {Berg, R. and Cordsen, J. and Heuer, J. and Nolte, J{\"o}rg and Oestmann, B. and Sander, M. and Schmidt, Heiko and Sch{\"o}n, F. and Schr{\"o}der-Preikschat, Wolfgang}, title = {The PEACE Family of Distributed Operating Systems}, language = {en} } @inproceedings{BergCordsenHastedtetal., author = {Berg, R. and Cordsen, J. and Hastedt, Ch. and Heuer, J. and Nolte, J{\"o}rg and Sander, M. and Schmidt, Heiko and Sch{\"o}n, F. and Schr{\"o}der-Preikschat, Wolfgang}, title = {Making Massively Parallel Systems Work}, language = {en} } @misc{BachhuberAppenDronskowskietal., author = {Bachhuber, Frederik and Appen, J{\"o}rg von and Dronskowski, Richard and Schmidt, Peer and Nilges, Tom and Pfitzner, Arno and Weihrich, Richard}, title = {Van der Waals interactions in selected allotropes of phosphorus}, series = {Zeitschrift f{\"u}r Kristallografie}, volume = {230}, journal = {Zeitschrift f{\"u}r Kristallografie}, number = {2}, issn = {2196-7105}, doi = {10.1515/zkri-2014-1800}, pages = {107 -- 115}, abstract = {Selected allotropes of phosphorus are investigated by different levels of density functional theory (DFT) calculations to evaluate the relative stability orders with a special focus on the role of van der Waals interactions.Phosphorus is an excellent reference system with a large number of allotropes. Starting from low-dimensional molecular (0D, white P) and polymer structures (1D, P nanorods) to layered (2D, black P) and tubular structures (2D and 3D, crystalline forms of red P), covalent structure motifs are interconnected by van der Waals interactions. They are a key factor for the correct energetic description of all P allotropes. A comparative study is carried out within the local density approximation (LDA) and the generalized gradient approximation (GGA), with and without implementation of a dispersion correction by Grimme (GGA-D2). Our intention is to achieve a reasonable agreement of our calculations with experimental data, the plausibility of energy values, and the treatment of long-range interactions. The effect of van der Waals interactions is exemplified for the interlayer distances of black phosphorous and its electronic structure.}, language = {en} } @misc{BachhuberAppenDronskowskietal., author = {Bachhuber, Frederik and Appen, J{\"o}rg von and Dronskowski, Richard and Schmidt, Peer and Nilges, Tom and Pfitzner, Arno and Weihrich, Richard}, title = {The Extended Stability Range of Phosphorus Allotropes}, series = {Angewandte Chemie / International edition}, volume = {53}, journal = {Angewandte Chemie / International edition}, number = {43}, issn = {1521-3773}, doi = {10.1002/anie.201404147}, pages = {11629 -- 11633}, abstract = {Phosphorus displays fascinating structural diversity and the discovery of new modifications continues to attract attention. In this work, a complete stability range of known and novel crystalline allotropes of phosphorus is described for the first time. This includes recently discovered tubular modifications and the prediction of not-yet-known crystal structures of [P12] nanorods and not-yet-isolated [P14] nanorods. Despite significant structural differences, all P allotropes consist of covalent substructures, which are held together by van der Waals interactions. Their correct reproduction by ab initio calculations is a core issue of current research. While some predictions with the established DFT functionals GGA and LDA differ significantly from experimental data in the description of the P allotropes, consistently excellent agreement with the GGA-D2 approach is used to predict the solid structures of the P nanorods.}, language = {en} } @misc{ZhangHerklotzHieckmannetal., author = {Zhang, Xi and Herklotz, Frank and Hieckmann, Ellen and Weber, J{\"o}rg and Schmidt, Peer}, title = {Vapor phase growth of ZnO single crystals}, series = {Journal of Vacuum Science and Technology : A}, volume = {29}, journal = {Journal of Vacuum Science and Technology : A}, doi = {10.1116/1.3553461}, pages = {03A107}, abstract = {Zinc oxide is a promising wide band gap semiconductor for future optoelectronic devices. Today ZnO bulk single crystals are grown by three different techniques: hydrothermally, from the melt, and by chemical vapor transport. For our studies, the authors employed in addition a simple and low cost vapor phase method which gives us good quality crystals and flexibility in crystal doping. The as-grown needle-shaped single crystals were characterized by resistivity measurements, scanning electron microscopy, electron backscatter diffraction, and low temperature photoluminescence spectroscopy.}, language = {en} } @misc{KoenigSchlammerSchmidt, author = {K{\"o}nig, Claus and Schlammer, Janine and Schmidt, J{\"o}rg}, title = {Die strafrechtliche Produkthaftung des Berechnungsingenieurs}, series = {Bautechnik}, volume = {93}, journal = {Bautechnik}, number = {9}, issn = {1437-0999}, pages = {647 -- 652}, language = {de} } @misc{SchlammerKoenigSchmidt, author = {Schlammer, Janine and K{\"o}nig, Claus and Schmidt, J{\"o}rg}, title = {Die produktrechtlichen Haftungsrisiken des Berechnungsingenieurs}, series = {Bautechnik}, volume = {94}, journal = {Bautechnik}, number = {3}, issn = {1437-0999}, doi = {10.1002/bate.201600086}, pages = {200 -- 205}, abstract = {Simulationsprogramme, wie z. B. die Methode der Finiten Elemente, geh{\"o}ren heute zu den Standardwerkzeugen in der Produktentwicklung. Mit diesen Systemen werden in vielen Bereichen technische und naturwissenschaftliche Probleme mathematisch abgebildet und deren L{\"o}sung grafisch aufbereitet. Den Entstehungsprozess des Produkts unterst{\"u}tzen diese Werkzeuge in hohem Maße, die fachlichen Entscheidungen allerdings trifft der Berechnungsingenieur. Dieser sollte f{\"u}r seine T{\"a}tigkeit {\"u}ber ein ausreichendes theoretisches und anwendungsspezifisches Fachwissen verf{\"u}gen und somit auch Kenntnis {\"u}ber m{\"o}gliche Fehlerquellen besitzen. Da bis zum Ende des Projekts Fehler in der Analyse nicht ausgeschlossen werden k{\"o}nnen, verbleibt f{\"u}r den Projektingenieur ein erhebliches fachliches Risiko. Ein konsequentes Prozess- bzw. Qualit{\"a}tsmanagement kann dazu beitragen, diese fachlichen Risiken zu verringern bzw. zu vermeiden. Mit den fachlichen Risiken verbunden sind stets auch Haftungsrisiken. Hier kann zwischen Anspr{\"u}chen aus Vertrag und solchen aus außervertraglicher Haftung unterschieden werden. Zu Letzterem z{\"a}hlen auch Anspr{\"u}che aus dem Produkthaftungsgesetz. Grunds{\"a}tzlich ist das Risiko, f{\"u}r einen Produktfehler zur Verantwortung gezogen zu werden, umso gr{\"o}ßer, je mehr Verantwortung der Berechnungsingenieur innerhalb des Unternehmens besitzt. Diese Ausarbeitung soll einen {\"U}berblick {\"u}ber das produktrechtliche Haftungsrisiko des Berechnungsingenieurs geben. Somit richtet sich die Thematik insbesondere an Unternehmen und Ingenieure, die Berechnungsdienstleistungen oder Berechnungsleistungen im Rahmen ihrer unternehmensinternen Produktentwicklung ausf{\"u}hren.}, language = {de} }