@misc{LangeErnstTeubneretal., author = {Lange, Felix and Ernst, Owen and Teubner, Thomas and Richter, Carsten and Schmidbauer, Martin and Skibitzki, Oliver and Schroeder, Thomas and Schmidt, Peer and Boeck, Torsten}, title = {In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates}, series = {Nano Futures}, volume = {4}, journal = {Nano Futures}, number = {3}, issn = {2399-1984}, doi = {10.1088/2399-1984/ab82a0}, pages = {1 -- 8}, abstract = {Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm-2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si-Au droplets with SixGe1-x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements.}, language = {en} }