@article{BieniekBeckJakubowskietal., author = {Bieniek, Tomasz and Beck, Romuald B. and Jakubowski, Andrzej and Hoffmann, Patrick and Schmeißer, Dieter and Konarski, Piotr and Cwil, M.}, title = {Formation of Pedestal Oxynitride Layer by Extremely Shallow Nitrogen Implantation in Planar R.F. Plasma Reactor}, language = {en} } @article{TallaridaSohalSchmeisser, author = {Tallarida, Massimo and Sohal, Rakesh and Schmeißer, Dieter}, title = {Resonant photoemission at the Oxygen K edge as a tool to study the eletronic properties of defects at SiO2/Si and SiO2/SiC interfaces}, language = {en} } @misc{HoffmannWehnerSchmeisseretal., author = {Hoffmann, Patrick and Wehner, Stefan and Schmeißer, Dieter and Brand, Helmut R. and K{\"u}ppers, J{\"u}rgen}, title = {Noise-induced spatiotemporal patterns in a bistable reaction-diffusion system: Photoelectron emission micrsoscopy experiments and modeling of the CO oxidation reaction on Ir(111)}, series = {Physical Review : E}, volume = {73}, journal = {Physical Review : E}, number = {5}, issn = {1550-2376}, pages = {056123}, language = {en} } @inproceedings{HenkelTorcheSohaletal., author = {Henkel, Karsten and Torche, Mohamed and Sohal, Rakesh and Schwiertz, Carola and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces}, series = {Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A.}, booktitle = {Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A.}, editor = {Dudley, Michael}, publisher = {Materials Research Society}, address = {Warrendale, Pa.}, isbn = {978-1-55899-867-4}, pages = {353 -- 358}, language = {en} } @misc{BeerbomMayerJaegermannetal., author = {Beerbom, Martin and Mayer, Thomas and Jaegermann, Wolfram and Batchelor, David R. and Schmeißer, Dieter}, title = {Electrochemically Induced Redox-Reactions on GaAs-Surfaces: High Resolution Photoemission Spectra Taken at the U49/2 Beamline}, language = {en} } @article{HoffmannMikaloBatcheloretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Batchelor, David R. and Schmeißer, Dieter and Soinski, M. S. and Follath, Rolf}, title = {The chromatic aberration of PEEM - demonstration on graphite inclusions in cast iron, Kategrorie: Microscopy - Spectromicroscopy}, language = {en} } @article{SieberMantelSeylleretal., author = {Sieber, N. and Mantel, B. F. and Seyller, Th. and Ristein, J. and Ley, L. and Heller, Thomas and Batchelor, David R. and Schmeißer, Dieter}, title = {Structural, electronic and chemical properties of hydrogen terminated 6H-SiC}, language = {en} } @article{GraupnerSeyllerLeyetal., author = {Graupner, R. and Seyller, Th. and Ley, L. and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {PEEM Investigation of CVD-Diamond grown on Si}, language = {en} } @article{HoffmannMikaloBatcheloretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Batchelor, David R. and Schmeißer, Dieter and Follath, Rolf}, title = {N2O-Oxidation of Si(100)}, language = {en} } @article{MikaloHoffmannBatcheloretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {Valence band spectroscopy of semiconducting regioregular Poly(3-Hexylthiophene)-2,5-diyl}, language = {en} } @inproceedings{MuellerPaloumpaSchmeisser, author = {M{\"u}ller, Klaus and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Carbon-Plot-Micostructuring for All-Polymer-Transistors}, language = {en} } @article{YfantisSchmeisserKompotiatis, author = {Yfantis, Alexandros D. and Schmeißer, Dieter and Kompotiatis, L.}, title = {Polypyrrole based conversion coatings for aluminium alloys}, language = {en} } @article{SieberSeyllerGraupneretal., author = {Sieber, N. and Seyller, Th. and Graupner, R. and Ley, L. and Mikalo, Ricardo Pablo and Batchelor, David R. and Schmeißer, Dieter}, title = {PES and LEED study of hydrogen and oxygen terminated 6H-SiC(0001) and (000-1) surfaces}, language = {de} } @inproceedings{YfantisBourdasYfantisetal., author = {Yfantis, Alexandros D. and Bourdas, N. and Yfantis, N. and Yfantis, Alexandros D. and Lambrakopoulos, S. and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {A study of anticorrosive conversion coatings based on conductive polymers of pyrrole}, language = {en} } @misc{YfantisSchmeisser, author = {Yfantis, Alexandros D. and Schmeißer, Dieter}, title = {Method of chemical deposition of compose conductive polymer coatings on aluminium alloy surfaces}, language = {en} } @article{HenkelSchmeisser, author = {Henkel, Karsten and Schmeißer, Dieter}, title = {Back-propagation based neural network with a two sensor system for monitoring of carbon dioxide and relative humidity}, language = {en} } @techreport{SchwiertzHenkelPaloumpaetal., author = {Schwiertz, Carola and Henkel, Karsten and Paloumpa, Ioanna and Schmeißer, Dieter and Kamieth, P. and Schnegber, P.}, title = {Aufbau eines Sensorarrays zur Detektion von umwelt- und tierphysiologisch relevanten Komponenten}, language = {de} } @techreport{HenkelPaloumpaSchwiertzetal., author = {Henkel, Karsten and Paloumpa, Ioanna and Schwiertz, D. and Schmeißer, Dieter and Kamieth, P. and Schengber, P.}, title = {Gezielte Entwicklung von Sensormaterialien und Sensoren zur spezifischen Detektion von schwefel- und stickstoffhaltigen Stoffgruppen}, language = {de} } @article{HenkelPaloumpaSchwiertzetal., author = {Henkel, Karsten and Paloumpa, Ioanna and Schwiertz, B. and Elling, B. and Danz, R. and B{\"u}chtemann, A. and Straube, Oliver and Schmeißer, Dieter}, title = {Kraftsensoren aus Polymerfolien-Piezoelektrische Polymersensoren f{\"u}r Hochdruckanwendungen}, language = {de} } @article{KraftThissenMayeretal., author = {Kraft, D. and Thißen, A. and Mayer, Thomas and Klein, A. and Jaegermann, Wolfram and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {Backcontact Formation on CdTe Thin Film Solar Cells}, language = {en} } @techreport{HenkelPaloumpaOpreaetal., author = {Henkel, Karsten and Paloumpa, Ioanna and Oprea, A. and Appel, G{\"u}nter and Schmeißer, Dieter and Frandsen, W. and Sch{\"o}lzel, Mario}, title = {Entwicklung von Sensoren mit Elektroden aus leitf{\"a}higen Polymeren}, language = {de} } @article{BatchelorScheerSchmeisser, author = {Batchelor, David R. and Scheer, M. and Schmeißer, Dieter}, title = {WAVE Calculations of Off Axis Undulator Radiation for the BESSY II U49 Undulator}, language = {en} } @article{HoffmannSchmeisserKleinetal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Klein, A. and Jaegermann, Wolfram and Pettenkofer, Christian and Follath, Rolf}, title = {Spectro-Microscopy with PEEM / µESCA}, language = {en} } @article{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter and Mast, M.}, title = {Multi-Atom Resonant Photoemission applied to study the silver to nitrogen interaction in polypyrrole films}, language = {en} } @inproceedings{HoffmannMikaloBatcheloretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Batchelor, David R. and Beuckert, Guido and Schmeißer, Dieter and Kittler, Martin and Ourmazd, A. and Lewerenz, Hans-Joachim}, title = {Solare Energieumwandlung in d{\"u}nnen Schichten}, language = {de} } @inproceedings{HoffmannBatchelorSchmeisser, author = {Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {Spectro-Microscopic analyses in metallurgical systems: spheroidic graphite in cast iron and the interface of friction-welded Al-Fe joints}, language = {en} } @article{SchmeisserAppelBoehmeetal., author = {Schmeißer, Dieter and Appel, G{\"u}nter and B{\"o}hme, O. and Heller, Thomas and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R.}, title = {Nanoparticles and polarons: active centers in thin film sensor devices}, language = {de} } @article{AppelMikaloHenkeletal., author = {Appel, G{\"u}nter and Mikalo, Ricardo Pablo and Henkel, Karsten and Oprea, A. and Yfantis, Alexandros D. and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Polymeric Electrodes}, language = {en} } @article{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {A spectro-microscopic approach for spatially resolved characterisation of semiconductor structures in PEEM}, language = {en} } @article{SchmeisserRichterPfitzneretal., author = {Schmeißer, Dieter and Richter, H. and Pfitzner, L. and Prasad, S.}, title = {E-MRS 1999 Spring Meeting, Strasbourg, June1-4,1999-Preface}, language = {en} } @article{YfantisYfantisTzalasetal., author = {Yfantis, Alexandros D. and Yfantis, Alexandros D. and Tzalas, B. and Schmeißer, Dieter}, title = {A new chrome - free passivation method of tinplate used in the canning industry}, language = {en} } @article{HellerBoehmeSchmeisser, author = {Heller, Thomas and B{\"o}hme, O. and Schmeißer, Dieter}, title = {Polarons in oxidic semiconductors - the SrTiO3 case}, language = {en} } @article{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Determination of the Vacuum Level in NEXAFS-spectra by Selected-Yield-NEXAFS}, language = {en} } @misc{BatchelorSchmeisserFollath, author = {Batchelor, David R. and Schmeißer, Dieter and Follath, Rolf}, title = {The BTU Cottbus Beamline at BESSY II}, language = {de} } @article{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Photoemissionselektronenmikroskopie - ein Instrument f{\"u}r die Materialforschung}, language = {de} } @article{AppelBoehmeMikaloetal., author = {Appel, G{\"u}nter and B{\"o}hme, O. and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {The polaron and bipolaron contributions to the electronic structure of polypyrrole films}, language = {en} } @article{SchmeisserBoehmeYfantisetal., author = {Schmeißer, Dieter and B{\"o}hme, O. and Yfantis, Alexandros D. and Heller, Thomas and Batchelor, David R. and Lundstr{\"o}m, Ingemar and Lloyd Spetz, Anita}, title = {Dipole moment of nanoparticles at interfaces}, language = {de} } @article{HoffmannMikaloSchmeisseretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter and Kittler, Martin}, title = {A spectro-microscopic approach to study the morphology and elemental distribution of mc-Si surfaces}, language = {en} } @article{OpreaHenkelOehmgenetal., author = {Oprea, A. and Henkel, Karsten and Oehmgen, R. and Appel, G{\"u}nter and Schmeißer, Dieter and Lauer, H. and Hausmann, P.}, title = {Increased sensor sensitivities obtained by polymer coated quartz microbalances}, language = {en} } @article{MikaloHoffmannHelleretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Heller, Thomas and Batchelor, David R. and Appel, G{\"u}nter and Schmeißer, Dieter}, title = {Doping and defect inhomogeneities of polypyrrole tosylate films as revealed by ?-NEXAFS}, language = {en} } @article{YfantisAppelSchmeisseretal., author = {Yfantis, Alexandros D. and Appel, G{\"u}nter and Schmeißer, Dieter and Yfantis, Alexandros D.}, title = {Polypyrrole doped with fluoro-metal complexes: thermal stability and structural properties}, language = {en} } @article{AppelSchmeisserBaueretal., author = {Appel, G{\"u}nter and Schmeißer, Dieter and Bauer, Jakob and Bauer, Monika and Egelhaaf, H. J. and Oelkrug, D.}, title = {The formation of oligomers in the electrolyte upon polymerization of pyrrole}, language = {en} } @article{BatchelorFollathSchmeisser, author = {Batchelor, David R. and Follath, Rolf and Schmeißer, Dieter}, title = {The optical design of a PGM for the Undulator U49/2 at BESSY II}, language = {en} } @article{HellerBoehmeTontietal., author = {Heller, Thomas and B{\"o}hme, O. and Tonti, D. and Klein, A. and Jaegermann, Wolfram and Schmeißer, Dieter}, title = {Na interaction with relaxed WO3 thin films}, language = {en} } @article{AppelBoehmeSchmeisser, author = {Appel, G{\"u}nter and B{\"o}hme, O. and Schmeißer, Dieter}, title = {NEXAFS-Spectroscopy of Differently Doped Polypyrroles}, language = {en} } @article{HoffmannMikaloBoehmeetal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and B{\"o}hme, O. and Schmeißer, Dieter}, title = {PEEM-investigations on cleaved MoTe2-surfaces}, language = {en} } @article{MikaloHoffmannBoehmeetal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and B{\"o}hme, O. and Schmeißer, Dieter}, title = {Doping inhomogenities in Polypyrrole films: a Photoemission Electron Microscope (PEEM) and Spectro-Microscopic Study}, language = {en} } @article{NaarmannSchmeisserBartletal., author = {Naarmann, H. and Schmeißer, Dieter and Bartl, A. and Dunsch, L. and G{\"o}pel, W.}, title = {Electronic and magnetic properties of polypyrrole films depending on their 1-dimensional and 2-dimensional microstructures}, language = {en} } @article{MikaloHoffmannHelleretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Heller, Thomas and Schmeißer, Dieter}, title = {Lateral Doping Inhomogeneities as Revealed by ?-NEXAFS and ?-PES}, language = {en} } @article{LloydSpetzSchmeisserBaranzahietal., author = {Lloyd Spetz, Anita and Schmeißer, Dieter and Baranzahi, A. and W{\"a}livaare, B. and G{\"o}pel, W. and Lundstr{\"o}m, Ingemar}, title = {X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors}, language = {en} } @article{AppelYfantisGoepeletal., author = {Appel, G{\"u}nter and Yfantis, Alexandros D. and G{\"o}pel, W. and Schmeißer, Dieter}, title = {Highly conductive polypyrrole films on nonconductive substrates}, language = {en} } @inproceedings{GehrlichOhsiekKleinetal., author = {Gehrlich, Lukas and Ohsiek, Susanne and Klein, C. and Geiß, M. and Friedemann, Michael and K{\"u}cher, Peter and Schmeißer, Dieter}, title = {Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements}, series = {2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM 2011), Dresden, Germany, 8 - 12 May 2011}, booktitle = {2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM 2011), Dresden, Germany, 8 - 12 May 2011}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4577-0503-8}, doi = {10.1109/IITC.2011.5940322}, pages = {82 -- 84}, language = {en} } @misc{FriedrichHenkelRichteretal., author = {Friedrich, Daniel and Henkel, Karsten and Richter, Matthias and Schmeißer, Dieter}, title = {Fullerenol as probed by Synchrotron X-Ray Photoemission and Absorption Spectroscopy}, language = {en} } @article{BatchelorFollathMikaloetal., author = {Batchelor, David R. and Follath, Rolf and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Commissioning Results of the BTUC-PGM beamline}, language = {en} } @misc{KolanekTallaridaMichlingetal., author = {Kolanek, Krzysztof and Tallarida, Massimo and Michling, Marcel and Schmeißer, Dieter}, title = {In situ study of the atomic layer deposition of HfO2 on Si}, series = {Journal of Vacuum Science and Technology}, journal = {Journal of Vacuum Science and Technology}, number = {A 30}, issn = {0734-2101}, pages = {01A143-1 -- 01A143-15}, language = {en} } @inproceedings{MandalHenkelSchmeisser, author = {Mandal, Dipankar and Henkel, Karsten and Schmeißer, Dieter}, title = {Control of the Crystalline Polymorph, Molecular Dipole and Chain Orientations in P(VDF-HFP) for High Electrical Energy Storage Application}, series = {International Conference on Nanoscience, Technology and Societal Implications (NSTSI), 2011}, booktitle = {International Conference on Nanoscience, Technology and Societal Implications (NSTSI), 2011}, publisher = {IEEE}, isbn = {978-1-4577-2035-2}, doi = {10.1109/NSTSI.2011.6111801}, language = {en} } @misc{KlocekHenkelKolaneketal., author = {Klocek, Jolanta and Henkel, Karsten and Kolanek, Krzysztof and Broczkowska, K. and Schmeißer, Dieter and Miller, M. and Zschech, Ehrenfried}, title = {Studies of the chemical and electrical properties of fullerene and 3-aminopropyltrimethoxysilane based low-k materials}, series = {Thin Solid Films}, volume = {520}, journal = {Thin Solid Films}, number = {7}, issn = {0040-6090}, pages = {2498 -- 2504}, language = {en} } @misc{MandalHenkelSchmeisser, author = {Mandal, Dipankar and Henkel, Karsten and Schmeißer, Dieter}, title = {The electroactive Beta-phase formation in Poly(vinylidene fluoride) by gold nanoparticles doping}, series = {Materials Letters}, journal = {Materials Letters}, number = {73}, issn = {0167-577X}, pages = {123 -- 125}, language = {en} } @misc{KlocekHenkelKolaneketal., author = {Klocek, Jolanta and Henkel, Karsten and Kolanek, Krzysztof and Zschech, Ehrenfried and Schmeißer, Dieter}, title = {Annealing influence on siloxane based materials incorporated with fullerenes, phthalocyanines and silsesquioxanes}, series = {BioNanoScience}, volume = {2}, journal = {BioNanoScience}, number = {1}, issn = {2191-1630}, pages = {52 -- 58}, language = {en} } @misc{MuellerRichterPhilipetal., author = {M{\"u}ller, Klaus and Richter, Matthias and Philip, Shine and Kunst, Manuel and Schmeißer, Dieter}, title = {Excited states in P3HT and P3HT/PCBM blends}, series = {BioNanoScience}, volume = {2}, journal = {BioNanoScience}, number = {1}, issn = {2191-1630}, pages = {42 -- 51}, language = {en} } @misc{RichterFriedrichSchmeisser, author = {Richter, Matthias and Friedrich, Daniel and Schmeißer, Dieter}, title = {Valence and Conduction band states of PCBM as probed by photoelectron spectroscopy at resonant excitation}, series = {BioNanoScience}, volume = {2}, journal = {BioNanoScience}, number = {1}, issn = {2191-1630}, pages = {59 -- 65}, language = {en} } @misc{KlocekKolanekSchmeisser, author = {Klocek, Jolanta and Kolanek, Krzysztof and Schmeißer, Dieter}, title = {Spectroscopic and atomic force microscopy investigations of hybrid materials composed of fullerenes and 3-aminopropyltrimethoxysilane}, series = {Journal of Physics and Chemistry of Solids}, volume = {73}, journal = {Journal of Physics and Chemistry of Solids}, number = {5}, issn = {0022-3697}, pages = {699 -- 706}, language = {en} } @misc{KlocekHenkelKolaneketal., author = {Klocek, Jolanta and Henkel, Karsten and Kolanek, Krzysztof and Zschech, Ehrenfried and Schmeißer, Dieter}, title = {Spectroscopic and capacitance-voltage characterization of thin aminopropylmethoxysilane films doped with copper phthalocyanine, tris(dimethylvinylsilyloxy)-POSS and fullerene cages}, series = {Applied surface science}, volume = {258}, journal = {Applied surface science}, number = {10}, issn = {0169-4332}, pages = {4213 -- 4221}, language = {en} } @misc{MichlingSchmeisser, author = {Michling, Marcel and Schmeißer, Dieter}, title = {Resonant Photoemission at the O1s threshold to characterize β-Ga2O 3 single crystals}, series = {IOP Conference Series: Materials Science and Engineering}, journal = {IOP Conference Series: Materials Science and Engineering}, number = {34}, issn = {1757-8981}, doi = {10.1088/1757-899X/34/1/012002}, pages = {012002}, abstract = {We report on spectroscopic investigations on β-Ga2O3single crystals. We focus on the detailed analysis of the O1s resonance profile by resonant photoelectron spectroscopy. We analyze the electronic structure and assign the O2p to build the valence band and both, O2p and Ga4s4p states to contribute to the conduction band. We determine the partial density of states for the valence and conduction bands and find a strong hybridization of O2p and Ga4s states. This is deduced from constant final state spectra on the O-KLL-Auger over the O K-edge and Ga L2,3-edge and a comparison to the corresponding X-ray absorption spectroscopy data. We also identify several types of defects. A broad band of oxygen derived defects is identified that extends through-out the gap. Small polarons are attributed to cause an anti-resonance in the valence states around the O1s threshold. In addition, a separate Auger decay at resonance indicates the existence of localized charge transfer states which involves localized Ga4sp states.}, language = {en} } @misc{MuellerRichterFriedrichetal., author = {M{\"u}ller, Klaus and Richter, Matthias and Friedrich, Daniel and Paloumpa, Ioanna and Kramm, Ulrike Ingrid and Schmeißer, Dieter}, title = {Spectroscopic characterization of Cobalt-Phthalocyanine electrocatalysts for fuel cell applications}, series = {Solid State Ionics}, journal = {Solid State Ionics}, number = {216}, issn = {1872-7689}, doi = {10.1016/j.ssi.2011.12.013}, pages = {78 -- 82}, abstract = {For polymer-electrolyte-membrane fuel cells (PEM-FC), platinumcatalysts on carbon based substrates are state of the art, due to high electrochemical activity and chemical stability in acid electrolytes. High costs of platinum force investigations of alternative catalysts. With respect to the oxygen reduction reaction, possible candidates are transition metal (TM) complexes like TM-porphyrines or TM-phthalocyanines. Pyrolysis on carbon based substrates improves the catalytic activity. Highest activities were found for Fe or Co as transition metal centers. We present results of the pyrolysis of Co-phthalocyanine (CoPc) on carbon black. Besides an investigation of morphology by scanning electron microscopy (SEM) and chemical composition by energy dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) during pyrolysis, we present a near edge X-ray absorption fine structure (NEXAFS) study of the chemical composition for the related annealing steps. This investigation is accompanied by an electrochemical characterization of the catalytic activity and selectivity. The XPS and NEXAFS data indicate a decomposition of the CoN4(chelate-) complex during pyrolysis. The N1s data for 800 °C show graphite-like, formally pyrrolic and pyridinic like features, without any significant contri-bution of Co. The Co2p data for both, XPS and NEXAFS are dominated by CoO/Co2O3. It can be concluded that during the pyrolysis cobalt particles are formed by the disintegration of CoN4-centers, after pyrolysis these par-ticles become oxidized upon contact with air.}, language = {en} } @misc{KolanekTallaridaSchmeisser, author = {Kolanek, Krzysztof and Tallarida, Massimo and Schmeißer, Dieter}, title = {Height distribution of atomic force microscopy images as a tool for atomic layer deposition characterization}, series = {Journal of Vacuum Science and Technology : A}, volume = {31}, journal = {Journal of Vacuum Science and Technology : A}, number = {1}, doi = {10.1116/1.4754557}, pages = {01A104-1 -- 01A104-9}, abstract = {The authors propose the analysis of surface height histograms as a tool for the atomic layer deposition (ALD) growth characterization in the initial stage of the process. ALD of HfO2 on a Si(100)/SiO2 substrate was investigated in situ by ultra high vacuum atomic force microscope working in noncontact mode. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf and H2O as precursors, were performed at 230 C. After each ALD cycle, the relation between the film growth and the root mean square surface roughness was studied. Parameters equivalent to HfO2 layer thickness, coverage, and surface roughness of the substrate and deposited material can be calculated in the proposed routine.}, language = {en} } @misc{KlocekKolanekHenkeletal., author = {Klocek, Jolanta and Kolanek, Krzysztof and Henkel, Karsten and Zschech, Ehrenfried and Schmeißer, Dieter}, title = {Influence of the fullerene derivatives and cage polyhedral oligomeric silsesquioxanes on 3-aminopropyltrimethoxysilane based hybrid nanocomposites chemical, morphological and electrical properties}, series = {Journal of Physics and Chemistry of Solids}, volume = {74}, journal = {Journal of Physics and Chemistry of Solids}, number = {1}, issn = {0022-3697}, doi = {10.1016/j.jpcs.2012.08.013}, pages = {135 -- 145}, abstract = {In this study we produced 3-aminopropyltrimethoxysilane based hybrid nanocomposites using fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) as nanodopants. Additionally, we modified obtained material with incompletely condensed cage polyhedral oligomeric silsesqiuox-anes (POSS) in order to improve its properties. Thin films were deposited by means of the spin-coating method. The films were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (CV) measurements. We observed that a properly chosen PCBM concentration may be a crucial factor to obtain high quality APTMS based films by the spin-coating technique. XPS revealed the presence of the C-NH-C species within POSS containing films indicating chemical interaction between the amino group of APTMS and the POSS molecules. AFM results suggest that at high POSS monomer concentration in the range of 1\% the creation of fractal-shaped aggregates takes place. The CV characterization of the samples exhibits a decrease of the APTMS based films dielectric constant due to the POSS and PCBM contribution. The combination of the applied methods delivers complementary information concerning the properties of the analyzed films.}, language = {en} } @misc{KukliDimriTammetal., author = {Kukli, Kaupo and Dimri, Mukesh Chandra and Tamm, Aile and Kemell, Marianna and K{\"a}{\"a}mbre, Tanel and Vehkam{\"a}ki, Marko and Puttaswamy, Manjunath and Stern, Raivo and Kuusik, Ivar and Kikas, Arvo and Tallarida, Massimo and Schmeißer, Dieter and Ritala, Mikko and Leskel{\"a}, Markku}, title = {Structural and Magnetic Studies on Iron Oxide and Iron-Magnesium Oxide Thin Films Deposited Using Ferrocene and (Dimethylaminomethyl)ferrocene Precursors}, series = {ECS Journal of Solid State Science and Technology}, volume = {2}, journal = {ECS Journal of Solid State Science and Technology}, number = {3}, issn = {2162-8769}, doi = {10.1149/2.004303jss}, pages = {N45 -- N54}, abstract = {Iron oxide and magnesium-doped iron oxide films were grown by atomic layer deposition in the temperature range of 350-500 ◦C from ferrocene, (dimethylaminomethyl)ferrocene, magnesiumβ-diketonate, and ozone. Phase composition of the films depended on the deposition temperature, as magnetite and/or maghemite tended to form instead of hematite upon lowering the temperature. Iron oxide layers were also mixed with magnesium oxide by alternate deposition of MgO and Fe2O3 which also favored the formation of magnetite or maghemite structure prior to hematite. Scanning electron microscopy implied the smoothening of the films after doping with magnesium oxide. Magnetometry was used to study the effects of temperature and doping levels on the magnetic properties of the films.}, language = {en} } @misc{PopoviciDelabieAdelmannetal., author = {Popovici, Mihaela and Delabie, Annelies and Adelmann, Christoph and Meersschaut, Johan and Franquet, Alexis and Tallarida, Massimo and Berg, Jaap van den and Richard, Olivier and Swerts, Johan and Tomida, Kazuyuki and Kim, Min-Soo and Tielens, Hilde and Bender, Hugo and Conard, Thierry and Jurczak, Malgorzata and Elshocht, Sven van and Schmeißer, Dieter}, title = {Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium}, series = {ECS Journal of Solid State Science and Technology}, volume = {2}, journal = {ECS Journal of Solid State Science and Technology}, number = {1}, issn = {2162-8769}, doi = {10.1149/2.035301jss}, pages = {N23 -- N27}, abstract = {The atomic layer deposition of titanium oxide TiO2 on ruthenium and oxidized ruthenium with titanium methoxide as metal precursor and H2O and O3 as oxidant was investigated by Rutherford backscattering (RBS) and time of flight secondary ion mass spectrometry (TOFSIMS). An ultra-thin layer of TiO2 deposited a priori with H2O plays the role of protection of Ru(Ox) substrates against etching by O3. Information about thin films (∼3 nm) interfacial reactions, thickness and structure was brought by Medium Energy Ion Scattering Spectroscopy (MEIS) and X-ray absorption spectroscopy (XAS) measurements. The growth enhancements observed in the first stages of the deposition depends on the pre-treatment (pre-oxidation, H2O based interlayer thickness) of the Ru substrate. Thick films (∼14 nm) were analyzed by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as deposited TiO2 films are crystalline with rutile structure, as resulted from structural analyzes. However, the presence of small amounts of anatase was detected by soft X-ray absorption spectroscopy (XAS) and is strongly influenced by the surface pre-treatment of the Ru substrate. The electrical properties (equivalent oxide thickness and leakage current density) correlate with a different rutile/anatase ratio present in the films.}, language = {en} } @misc{FischerRohrbeckWehneretal., author = {Fischer, Christian B. and Rohrbeck, Magdalena and Wehner, Stefan and Richter, Matthias and Schmeißer, Dieter}, title = {Interlayer formation of diamond-like carbon coatings on industrial polyethylene: Thickness dependent surface characterization by SEM, AFM and NEXAFS}, series = {Applied Surface Science}, journal = {Applied Surface Science}, number = {271}, issn = {0169-4332}, doi = {10.1016/j.apsusc.2013.01.210}, pages = {381 -- 389}, abstract = {The coating of materials with diamond-like carbon (DLC) is a very common way to change and improve their basic characteristics. Although DLC is used on several substrates, the chemical and physical properties throughout the coating process on plastics are yet sparsely investigated. Two types of protective coatings one sp3-enriched (robust, r-type) and one with more sp2-centers (flexible, f-type) have been realized on polyethylene by PECVD deposition. SEM and AFM analysis of coated samples of DLC types revealed diverse surface topographies on different scales and images appeared even differently smoothed by the carbonaceous deposits. Grains of both DLC types are platelet-shaped and nearly double in size for the robust type indicating fundamental differences in the epitaxial DLC growth. NEXAFS spectroscopy showed significant details of carbon centers in chemically different neighborhood displaying a characteristic fingerprint behavior. Comparison of deposition models revealed a mechanism of interlayer formation which is discussed in detail. Interlayer formation is clearly the appropriate explanation of the process for the current carbon deposition between these two unequal materials. An improved understanding of hard DLC and soft polyethylene assembly is given in the presented work.}, language = {en} } @misc{RichterPaloumpaFriedrichetal., author = {Richter, Matthias and Paloumpa, Ioanna and Friedrich, Daniel and Schmeißer, Dieter}, title = {Multiple Auger Decay At Resonant Photo-Excitation In Carbon Thin Films}, series = {ECS Transactions}, volume = {50}, journal = {ECS Transactions}, number = {20}, doi = {10.1149/05020.0009ecst}, pages = {9 -- 21}, abstract = {We use resonant photoemission at the C1s edge to study the electronic structure of HOPG, graphene flakes and monolayer graphene. We find remarkable differences in the profile of the Auger decay channels, which we attribute to an additional multiple-Auger with a three-hole final state. A prerequisite for the appearance of this decay mechanism is the existence of localized excitonic states, which cause the appearance of the multiple Auger decay. We use those effects to identify the existence and the quantity of such defect states within the π*-band regime in carbon thin films, because the intensity of the three-hole Auger decay is varying with the defect density of the carbon films. We find that the appearance of the multiple Auger decay is different for multilayer and monolayer graphene. In particular the interaction of impurities leads to broadening of the C1s core levels. The three-hole Auger decay spectroscopy is a new method to detect such contaminations with a high sensitivity.}, language = {en} } @misc{RichterSchmeisser, author = {Richter, Matthias and Schmeißer, Dieter}, title = {Spin states in Co-PI catalysts}, series = {Applied Physics Letters}, journal = {Applied Physics Letters}, number = {102}, issn = {1077-3118}, doi = {10.1063/1.4811748}, pages = {253904-1 -- 253904-4}, abstract = {Cobalt based oxygen evolution catalysts (Co-PI, PI=electrodeposited from pH 7 phosphate) are studied by resonant photoemission spectroscopy at the Co L3 and O1s edge. For the individual Co3d states, we determine their configuration, their spin, and their energy level relative to the Fermi energy. We identify the Co divalent high spin state and the trivalent low spin state. In addition, we also find the corresponding oxygen-to-metal charge transfer states. We attribute the trivalent charge transfer state to be the active state for the oxygen evolution reaction.}, language = {en} } @misc{RichterSchmeisser, author = {Richter, Matthias and Schmeißer, Dieter}, title = {The Co2p Oxidation State In Co-PI Catalysts}, series = {ECS Transactions}, volume = {50}, journal = {ECS Transactions}, number = {49}, doi = {10.1149/05049.0113ecst}, pages = {113 -- 126}, abstract = {The electronic structure of Cobalt based catalysts used for photocatalytic water splitting in solar cells is analyzed using synchrotron radiation photoelectron spectroscopy. The catalyst films are prepared by electrochemical deposition. We employ a X-ray photoelectron spectroscopy study to analyze the Co2p and O1s core levels,absorption edges and valence bands. We discuss our resonant data in terms of the partial density of states of the valence and conduction band. We find a difference in the Co oxidation state as a function of film thickness (deposited charge). From the relative amount of Co, O, K and P we favor the molecular cobaltate cluster-like structure as the structural motif of the Co-PI catalyst.}, language = {en} } @misc{TallaridaSchmeisser, author = {Tallarida, Massimo and Schmeißer, Dieter}, title = {In situALD experiments with synchrotron radiation photoelectron spectroscopy}, series = {Semiconductor Science and Technology}, volume = {27}, journal = {Semiconductor Science and Technology}, number = {7}, issn = {1361-6641}, doi = {10.1088/0268-1242/27/7/074010}, pages = {074010}, abstract = {In this contribution, we describe some features of atomic layer deposition (ALD) investigated by means of synchrotron radiation photoelemission spectroscopy (SR-PES). In particular, we show how the surface sensitivity of SR-PES combined with the in situ nature of our investigations can point out interactions between the substrate and ALD precursors. We observed changes on all substrates investigated, included Si, GaAs, Ru and their surface oxides. These interactions are extremely important during the first ALD cycles and induce modifications in the substrate, which might lead to its functionality enhancement.}, language = {en} } @misc{SchmidtSchmeisser, author = {Schmidt, Stephan and Schmeißer, Dieter}, title = {Electronic structure of cobalt-nickel mixed oxides}, series = {Solid State Ionics}, journal = {Solid State Ionics}, number = {225}, issn = {1872-7689}, doi = {10.1016/j.ssi.2012.06.009}, pages = {737 -- 741}, abstract = {We investigate the electronic structure of cobalt-nickel mixed oxides by means of SR-based electron spectroscopy. We vary the Co-Ni content systematically and find that the most significant changes in the spectroscopic data occur at a mixing ratio of 30/70. We analyze the electronic structure of this material in detail and we are able to distinguish between pure covalent contributions, which cause a band gap of about 6 eV and empty defect states, whichfill the band gap almost completely. These defects are associated with the formation of 3d7L charge transfer states. These are correlated defect states and are identified by resonant photo-emission spectroscopy.}, language = {en} } @misc{MandalMuellerHenkeletal., author = {Mandal, Dipankar and M{\"u}ller, Klaus and Henkel, Karsten and Schmeißer, Dieter}, title = {The effect of X-ray photoelectron spectroscopy measurement on P(VDF-TrFE) copolymer thin films}, series = {Applied Surface Science}, journal = {Applied Surface Science}, number = {261}, issn = {0169-4332}, doi = {10.1016/j.apsusc.2012.07.144}, pages = {209 -- 213}, abstract = {The impact of prolonged X-ray irradiation during X-ray photoelectron spectroscopy (XPS) measurement was investigated on poly(vinylidene-trifluoroethylene) (P(VDF-TrFE)) thin films. It was observed that prolonged X-ray irradiation can accelerate the crosslinking of P(VDF-TrFE) and diminish the ferroelectric phase. Fourier transform infrared spectroscopy (FT-IR) data indicate that the ferroelectric phase diminishes completely after 360 kJ of X-ray irradiation dose and it induces the paraelectric phase. In this work, the main emphasis was given to the optimization of the X-ray irradiation dose during XPS measurements to maintain the ferroelectric phase within the copolymer films.}, language = {en} } @misc{TallaridaAdelmannDelabieetal., author = {Tallarida, Massimo and Adelmann, Christoph and Delabie, Annelies and van Elshocht, Sven and Caymax, Matty and Schmeißer, Dieter}, title = {GaAs clean up studied with synchrotron radiation photoemission}, series = {IOP Conference Series : Materials Science and Engineering}, journal = {IOP Conference Series : Materials Science and Engineering}, number = {41}, issn = {1757-899X}, doi = {10.1088/1757-899X/41/1/012003}, pages = {012003}, abstract = {In this contribution we describe the chemical changes at the surface of GaAs upon adsorption of tri-methyl-aluminum (TMA). TMA is used to grow Al2O3 with atomic layer deposition (ALD) usually using H2O as oxygen source. Recently, it was pointed out that the adsorption of TMA on various III-V surfaces reduces the native oxide, allowing the growth of an abrupt III-V/High-K interface with reduced density of defects. Synchrotron radiation photoemission spectroscopy (SR-PES) is a powerful method to characterize surfaces and interfaces of many materials, as it is capable todetermine their chemical composition as well as the electronic properties. We performed in-situ SR-PES measurements after exposing a GaAs surface to TMA pulses at about 250°C. Upon using the possibility of tuning the incident photon energy we compared the Ga3d spectra at 41 eV, 71 eV, 91 eV and 121 eV, as well as the As3d at 71 eV and 91 eV. Finally, we show that using SR-PES allows a further understanding of the surface composition, which is usually not accessible with other techniques.}, language = {en} } @inproceedings{RichterSchmeisser, author = {Richter, Matthias and Schmeißer, Dieter}, title = {The Co2p oxidation state in Co-PI catalysts}, series = {Meeting Abstracts-Electrochemical Society, Pacific Rim Meeting on Electrochemical and Solid-State Science, Honolulu, 2012}, booktitle = {Meeting Abstracts-Electrochemical Society, Pacific Rim Meeting on Electrochemical and Solid-State Science, Honolulu, 2012}, publisher = {The Electrochemical Society}, pages = {1803}, language = {en} } @inproceedings{RichterFriedrichSchmeisser, author = {Richter, Matthias and Friedrich, Daniel and Schmeißer, Dieter}, title = {Multiple Auger decay at resonant photo-excitation in carbon thin films}, series = {Meeting Abstracts-Electrochemical Society, Pacific Rim Meeting on Electrochemical and Solid-State Science, Honolulu, 2012}, booktitle = {Meeting Abstracts-Electrochemical Society, Pacific Rim Meeting on Electrochemical and Solid-State Science, Honolulu, 2012}, publisher = {The Electrochemical Society}, pages = {3509}, language = {en} } @inproceedings{SchmeisserRichterTallarida, author = {Schmeißer, Dieter and Richter, Matthias and Tallarida, Massimo}, title = {Intrinsic defects in TiO2 to explain resistive switching devices}, series = {Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany}, booktitle = {Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany}, editor = {Heber, J{\"o}rg and Schlom, Darrell and Tokura, Yoshinori and Waser, Rainer and Wuttig, Matthias}, publisher = {Wiley-VCH}, address = {Weinheim}, isbn = {978-3-527-41191-7}, doi = {10.1002/9783527667703.ch45}, pages = {255 -- 256}, language = {en} } @inproceedings{MandalHenkelDasetal., author = {Mandal, Dipankar and Henkel, Karsten and Das, Suken and Schmeißer, Dieter}, title = {Control of β- and γ-Phase formation in electroactive P(VDF-HFP) films by silver nano-particle doping}, series = {Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany}, booktitle = {Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany}, editor = {Heber, J{\"o}rg and Schlom, Darrell and Tokura, Yoshinori and Waser, Rainer and Wuttig, Matthias}, publisher = {Wiley-VCH}, address = {Weinheim}, isbn = {978-3-527-41191-7}, doi = {10.1002/9783527667703.ch69}, pages = {640 -- 641}, language = {en} } @misc{TallaridaAdelmannDelabieetal., author = {Tallarida, Massimo and Adelmann, Christoph and Delabie, Annelies and Elshocht, Sven van and Caymax, Matty and Schmeißer, Dieter}, title = {III-V/Oxide Interfaces Investigated with Synchrotron Radiation Photoemission Spectroscopy}, series = {ECS Transactions}, volume = {50}, journal = {ECS Transactions}, number = {4}, issn = {1938-6737}, doi = {10.1149/05004.0123ecst}, pages = {123 -- 128}, abstract = {We used synchrotron radiation photoemission spectroscopy (SR-PES) to investigate the surface of GaAs and other III-V semiconductors after tri-methyl-aluminum (TMA) pulses performed at 250{degree sign}C. We observed the removal of native oxide and the growth of Al-oxide upon measuring the As3d, Ga3d, Al2p and VB spectra. After seven TMA pulses we performed one water pulse. As3d and Ga3d peaks showed almost no lineshape change, but a decrease of intensity due to the water adsorption. The valence band shows a change in the secondary electron cut-off and the decrease of work function. We conclude that water mostly adsorbs molecularly and induces the work function decrease. The molecular absorption of water indicates that the seven TMA pulses produce a passivated surface only partially terminated with OH groups.}, language = {en} } @misc{MuellerFleigeRachowetal., author = {M{\"u}ller, Klaus and Fleige, Michael and Rachow, Fabian and Schmeißer, Dieter}, title = {Sabatier based CO2-methanation of flue gas emitted by conventional power plants}, series = {Energy Procedia}, volume = {40}, journal = {Energy Procedia}, issn = {1876-6102}, doi = {10.1016/j.egypro.2013.08.028}, pages = {240 -- 248}, abstract = {The hydrogenation CO2+ 4H2 ->CH4 + 2H2O discovered by Paul Sabatier nowadays is discussed as "Power-to-approach" to utilize excess energy from renewable electricity generation. In a laboratory scale, we investigate the Sabatier process in a simulated flue gas atmosphere of conventional base load power plants. The reaction is investigated with regard to conversion rates, yield, selectivity and long-term stability. Using a catalyst based on nickel,we extract selectivities near 100\% with a conversion around 85\%. Beside the influence of oxygen, we investigate further typical contaminations like NO2 and SO2.}, language = {en} } @inproceedings{MaiDauderstaedtPahneretal., author = {Mai, Andreas and Dauderst{\"a}dt, Ulrike and Pahner, D. and Krellmann, M. and Schmeißer, Dieter and Wagner, M.}, title = {In situ determination of laser induced degradation of micro-mirror arrays}, series = {International Students and Young Scientists Workshop Photonics and Microsystems, Cottbus, Germany, 8 - 10 June 2011}, booktitle = {International Students and Young Scientists Workshop Photonics and Microsystems, Cottbus, Germany, 8 - 10 June 2011}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4577-1651-5}, doi = {10.1109/STYSW.2011.6155850}, pages = {84 -- 88}, abstract = {The Fraunhofer Institute for Photonic Microsystems (Fraunhofer IPMS) develops spatial light modulators (SLMs) based on arrays of tiltable micro mirrors on a semiconductor chip. Typical applications are pattern generation for deepUV-laser mask writing or structured illumination in microscopy. Development and optimization of such SLMs requires detailed knowledge of the device behaviour under operating conditions. Here, the flatness of each single mirror effects the image resolution and contrast of the generated pattern and is amongst others a characteristic property of SLMs. In this context a surface topography measurement under laser exposure (in situ) was designed. The interferometric setup uses the phase-shift principle and allows a resolution in z-direction in the single-digit nanometer range. During irradiation with UV-laser light at 248 nm (KrF) and energy densities of up to 20 mJ/cm2 the change in single micro-mirrors topography was detected in situ. Measurementswith varying pulse energies were carried out to identify an impacton the device performance. In general, the setup is neither limited to a specific illumination wavelength nor to micro-mirrors as structures under test.}, language = {en} } @misc{BarrecaCarraroGasparottoetal., author = {Barreca, Davide and Carraro, Giorgio and Gasparotto, Alberto and Maccato, Chiara and Rossi, Francesca and Salviati, Giancarlo and Tallarida, Massimo and Das, Chittaranjan and Fresno, Fernando and Korte, Dorota and Štangar, Urška Lavrenčič and Franko, Mladen and Schmeißer, Dieter}, title = {Surface Functionalization of Nanostructured Fe2O3 Polymorphs: From Design to Light-Activated Applications}, series = {ACS Applied Materials \& Interfaces}, volume = {5}, journal = {ACS Applied Materials \& Interfaces}, number = {15}, issn = {1944-8252}, doi = {10.1021/am401475g}, pages = {7130 -- 7138}, abstract = {Nanostructured iron(III) oxide deposits are grown by chemical vapor deposition (CVD) at 400-500 °C on Si(100) substrates from Fe(hfa)2TMEDA (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; TMEDA = N,N,N′N′-tetramethylethylenediamine), yielding the selective formation of α-Fe2O3or the scarcely studiedε-Fe2O3 polymorphs under suitably optimized preparative conditions. By using Ti(OPr i)4(OPri= iso-propoxy) and water asatomic layer deposition (ALD) precursors, we subsequently functionalized the obtained materials at moderate temperatures (<300°C) by an ultrathin titanomagnetite (Fe3-xTixO4) overlayer. An extensive multitechnique character-ization, aimed at elucidating the system structure, morphology, composition and optical properties, evidenced that the photoactivated hydrophilic and photocatalytic behavior of the synthesized materials is dependent both on iron oxide phase composition and ALD surface modification. The proposed CVD/ALD hybrid synthetic approach candidates itself as a powerful tool for a variety of applications where semiconductor-based nanoarchitectures can benefit from the coupling with an ad hoc surface layer.}, language = {en} } @misc{AdelmannCuypersTallaridaetal., author = {Adelmann, Christoph and Cuypers, Daniel and Tallarida, Massimo and Rodriguez, Leonard and De Clercq, Astrid and Friedrich, Daniel and Conard, Thierry and Delabie, Annelies and Seo, Jin Won and Locquet, Jean-Pierre and De Gendt, Stefan and Schmeißer, Dieter and Elshocht, Sven van and Caymax, Matty}, title = {Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide}, series = {Chemistry of Materials}, volume = {25}, journal = {Chemistry of Materials}, number = {7}, issn = {1520-5002}, doi = {10.1021/cm304070h}, pages = {1078 -- 1091}, abstract = {The surface chemistry and the interface formation during the initial stages of the atomic layer deposition (ALD) of Al2O3 from trimethylaluminum (TMA) and H2O on InP(100)were studied by synchrotron radiation photoemission spectroscopy and scanning tunneling microscopy. The effect of the ex situ surface cleaning by either H2SO4 or (NH4)2S was examined. It is shown that the native oxide on the InP surface consisted mainly of indium hydrogen phosphates with a P enrichment at the interface with InP. After a (NH4)2S treatment, S was present on the surface as a sulfide in both surface and subsurface sites. Exposure to TMA led to the formation of a thin AlPO4 layer, irrespective of the surface cleaning. The surface Fermi level of p-type InP was found to be pinned close to midgap after H2SO4 cleaning and moved only slightly further toward the conduction band edge upon TMA exposure, indicating that the AlPO4/InP interface was rather defective. (NH4)2S passivation led to a Fermi level position of p-type InP close to the conduction band edge. Hence, the InP surface was weakly inverted, which can be attributed to surface doping by S donors. TMA exposure was found to remove surface S, which was accompanied by a shift of the Fermi level to midgap, consistent with the removal of (part of) the S donors in combination with a defective AlPO4/InP interface. Further TMA/H2O ALD did not lead to any detectable changes of the AlPO4/InP interface and suggested simple overgrowth with Al2O3.}, language = {en} } @misc{RossiFabbriTallaridaetal., author = {Rossi, Francesca and Fabbri, Filippo and Tallarida, Massimo and Schmeißer, Dieter and Modreanu, Mircea and Attolini, Giovanni and Salviati, Giancarlo}, title = {Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires}, series = {Scripta Materialia}, volume = {69}, journal = {Scripta Materialia}, number = {10}, issn = {1359-6462}, doi = {10.1016/j.scriptamat.2013.08.017}, pages = {744 -- 747}, abstract = {In this work we report the morphological, structural and luminescence properties of HfO2 nanocrystals grown on the surface of SiC/SiO2 core/shell nanowires by atomic layer deposition. All the studies are carried out in comparison with HfO2 nanocrystal aggregates grown on planar oxidized silicon substrates. The structural analyses reveal that HfO2has monoclinic structure with dif-ferent orientations. The cathodoluminescence emission shows the main components at 2.7 and 2.3 eV, deeply influenced by the arrangement and aggregation of the nanocrystals.}, language = {en} } @misc{HaeberleHenkelGargourietal., author = {Haeberle, J{\"o}rg and Henkel, Karsten and Gargouri, Hassan and Naumann, Franziska and Gruska, Bernd and Arens, Michael and Tallarida, Massimo and Schmeißer, Dieter}, title = {Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films}, series = {Beilstein Journal of Nanotechnology}, volume = {2013}, journal = {Beilstein Journal of Nanotechnology}, number = {4}, issn = {2190-4286}, doi = {10.3762/bjnano.4.83}, pages = {732 -- 742}, abstract = {We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and correlatethem to X-ray photoelectron spectroscopy (XPS) results. The 200°C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films.}, language = {en} } @inproceedings{CuypersDorpTallaridaetal., author = {Cuypers, Daniel and Dorp, Dennis H. von and Tallarida, Massimo and Brizzi, Simone and Rodriguez, Leonard and Conard, Thierry and Arnauts, Sophia and Schmeißer, Dieter and Adelmann, Christoph and De Gendt, Stefan}, title = {Study of InP Surfaces After Wet Chemical Treatments}, series = {Meeting Abstracts-Electrochemical Society, San Francisco, 2013}, booktitle = {Meeting Abstracts-Electrochemical Society, San Francisco, 2013}, publisher = {The Electrochemical Society}, pages = {S. 2132}, language = {en} } @misc{CuypersDorpTallaridaetal., author = {Cuypers, Daniel and Dorp, Dennis H. von and Tallarida, Massimo and Brizzi, Simone and Rodriguez, Leonard and Conard, Thierry and Arnauts, Sophia and Schmeißer, Dieter and Adelmann, Christoph and De Gendt, Stefan}, title = {Study of InP Surfaces after Wet Chemical Treatments}, series = {ECS Transactions}, volume = {58}, journal = {ECS Transactions}, number = {6}, issn = {1938-6737}, doi = {10.1149/05806.0297ecst}, pages = {297 -- 303}, abstract = {In this work synchrotron radiation photoemission spectroscopy (SRPES) is used to study InP surfaces after different wet chemical treatments. All results are compared to a typical fingerprint of surface components present on an as received InP sample. It is shown that acidified (HCl and H₂SO₄) treatments efficiently remove the native phosphate, although components like Pᴼ, Inᴼ and P(2±∆)+ remain present. In alkaline solution (NH₄OH) oxide remains present at the surface. As an alternative treatment, the immersion into (NH₄)₂S was studied. This passivation treatment results in fewer surface components which suggests that a higher quality surface is obtained.}, language = {en} } @misc{CuypersDorpTallaridaetal., author = {Cuypers, Daniel and Dorp, Dennis H. von and Tallarida, Massimo and Brizzi, Simone and Conard, Thierry and Rodriguez, Leonard and Mees, M. and Arnauts, Sophia and Schmeißer, Dieter and Adelmann, Christoph and De Gendt, Stefan}, title = {Study of InP Surfaces after Wet Chemical Treatments}, series = {ECS Journal of Solid State Science and Technology}, volume = {3}, journal = {ECS Journal of Solid State Science and Technology}, number = {1}, issn = {2162-8777}, doi = {10.1149/2.005401jss}, pages = {N3016 -- N3022}, abstract = {The influence of different wet chemical treatments (HCl, H₂SO₄, NH₄OH) on the composition of InP surfaces is studied by using synchrotron radiation photoemission spectroscopy (SRPES). It is shown that a significant amount of oxide remains present after immersion in a NH₄OH solution which is ascribed to the insolubility of In³⁺ at higher pH values. Acidic treatments efficiently remove the native oxide, although components like Pᴼ, Inᴼ and P(2±Δ)+ suboxides are observed. Alternatively, the influence of a passivation step in (NH₄)₂S solution on the surface composition was investigated. The InP surface after immersion into (NH₄)₂S results in fewer surface components, without detection of Pᴼ and P(2±Δ)+ suboxides. Finally, slight etching of InP surfaces in HCl/H₂O₂ solution followed by a native oxide removal step, showed no significant effect on the surface composition.}, language = {en} } @misc{MuellerStaedterRachowetal., author = {M{\"u}ller, Klaus and St{\"a}dter, Matthias and Rachow, Fabian and Hoffmannbeck, David and Schmeißer, Dieter}, title = {Sabatier-based CO2-methanation by catalytic conversion}, series = {Environmental Earth Sciences}, volume = {70}, journal = {Environmental Earth Sciences}, number = {8}, issn = {1866-6280}, doi = {10.1007/s12665-013-2609-3}, pages = {3771 -- 3778}, abstract = {The catalytic conversion of CO2is an important component for the reintegration of secondary products like CO2 or H2 into the energy supply. An example is the "power to gas'" concept with a conversion of CO2 into CH4. The CO2 is transferred into a carrier of chemical energy, with the possibility to feed the produced CH4 into the existing network of natural gas. At temperatures of around 350 °C, hydrogenation of CO2 to CH4 is possible by the Sabatier reaction CO2+4H2->CH4+H2O. One prerequisite for efficient kinetics of the Sabatier reaction is the application and optimization of catalysts. The focus of catalyst development is given to their performance under the conditions to be expected in the special application. As a part of the project Geoenergy-Research (GeoEn), we address questions related to the catalytic utilization of CO2 produced in the course of the oxyfuel combustion of lignite. In this contribution, we report on the experimental setup in laboratory scale, which enables an advanced characterization of the catalytic performance, including thermodesorption measurements at atmospheric pressure in order to determine the amount of adsorbed CO2 under real conditions. We also show data for activation energies, the catalytic performance as function of temperature and the long time stability of a commercial Ru-based catalyst.}, language = {en} } @misc{DasTallaridaSchmeisser, author = {Das, Chittaranjan and Tallarida, Massimo and Schmeißer, Dieter}, title = {Linear dichroism in ALD layers of TiO₂}, series = {Environmental Earth Sciences}, volume = {70}, journal = {Environmental Earth Sciences}, number = {8}, issn = {1866-6280}, doi = {10.1007/s12665-013-2836-7}, pages = {3785 -- 3795}, abstract = {We prepare TiO₂film by ALD and study their electronic properties by soft X-ray absorption spectroscopy (XAS) and photoelectron spectroscopy. We focus on XAS and X-ray linear dichroism to indentify band onset and learn about local distortion of the Ti-O octahedral atomic and about defects which cause Ti-based electronic states within the band gap.}, language = {en} } @misc{StaedterMuellerRachowetal., author = {St{\"a}dter, Matthias and M{\"u}ller, Klaus and Rachow, Fabian and Richter, Matthias and Schmeißer, Dieter}, title = {Ambient pressure thermal desorption spectroscopy (AP-TDS) of NiO/SiO2 catalysts}, series = {Environmental Earth Sciences}, volume = {70}, journal = {Environmental Earth Sciences}, number = {8}, issn = {1866-6280}, doi = {10.1007/s12665-013-2835-8}, pages = {3779 -- 3784}, abstract = {The Sabatier reaction is a key process in the "power-to-gas" application which is considered to con-tribute to future chemical energy storage systems. In this contribution we focus on the catalytic active sites of a NiO catalyst supported on SiO2(NiO/SiO2) which is commonly used in the Sabatier reaction. A novel technique for the characterization of the active sites is presented and dis-cussed using thermal desorption spectroscopy at ambient pressure. This analytical tool is operated under reaction conditions and allows element specific measurements during the catalytic process of CO2 reforming towards methane. Beside the desorption experiments, XPS and XAS measurements of pristine and catalytically used samples are performed to determine the influence of the Sabatier reaction conditions on the surface structure of the catalyst.}, language = {en} } @misc{ScheckWenderothSchmeisserMuttietal., author = {Scheck-Wenderoth, Magdalena and Schmeißer, Dieter and Mutti, Maria and Kolditz, Olaf and Huenges, Ernst and Schultz, Hans-Martin and Liebscher, Axel and Bock, Michaela}, title = {Geoenergy: new concepts for utilization of geo-reservoirs as potential energy sources}, series = {Environmental Earth Sciences}, volume = {70}, journal = {Environmental Earth Sciences}, number = {8}, issn = {1866-6280}, doi = {10.1007/s12665-013-2877-y}, pages = {3427 -- 3431}, language = {en} } @misc{GerlichOhsiekKleinetal., author = {Gerlich, Lukas and Ohsiek, Susanne and Klein, Christoph and Geiß, Mario and Friedemann, Michael and K{\"u}cher, Peter and Schmeißer, Dieter}, title = {Interface engineering for the TaN/Ta barrier film deposition process to control Ta-crystal growth}, series = {Microelectronic Engineering}, volume = {Vol. 106}, journal = {Microelectronic Engineering}, doi = {10.1016/j.mee.2013.01.017}, pages = {63 -- 68}, abstract = {As a consequence of device shrinking the resistivity of the widely used TaN/Ta double barrier layer becomes an increasingly important parameter for device speed beyond the 32 nm technology node. In this study we describe the optimization of the deposition of TaN/Ta stacks in such a way that tantalum nitride layer thickness is minimized and tantalum grows in the favorable conducting alpha-phase. In the first part of the study we usedin situ ARXPS to investigate the growth of different tantalum nitride layers on SiO2 and SiOCH as a function of deposition time, nitrogen flow and deposition power. In the second part we analyzed the crystalline phase of a 20 nm thick tantalum layer deposited on top of the same series of tantalum nitride layers characterized in the growth study. The main findings are the appearance of tan-talum carbide and tantalum silicide as interface species for the deposition on SiOCH and only tantalum silicide for the deposition on SiO2. We found that alpha-tantalum grows preferably on tantalum carbide and nitrogen rich intermediate layers whereas silicide at the interface promotes the growth of beta-tantalum. To verify these findings we studied two additional modifications of the interface. A lower bias power for a deposition of tantalum nitride on SiO2 was used to confirm the role of tantalum silicide and a thermal treatment of a thin tantalum layer on SiOCH was applied to confirm the role of tantalum carbide. Finally, the contact resistance in via chains on patterned wafers for four selected processes showed the same trends as the sheet resistance of the corresponding barrier films on blanket wafer experiments.}, language = {en} } @misc{HenkelGargouriGruskaetal., author = {Henkel, Karsten and Gargouri, Hassan and Gruska, Bernd and Arens, Michael and Tallarida, Massimo and Schmeißer, Dieter}, title = {Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by PE-ALD at 25°C ≤ T ≤ 200°C}, series = {Journal of Vacuum Science and Technology A}, volume = {1}, journal = {Journal of Vacuum Science and Technology A}, number = {32}, doi = {10.1116/1.4831897}, pages = {01A107-1 -- 01A107-10}, abstract = {In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and 200 °C and investigated by capacitance-voltage and conductance-voltage recordings. The measurements are compared to standard thermal atomic layer deposition (T-ALD) at 200 °C. Very low interface state density (D it) ~1011 eV-1 cm-2 could be achieved for the PE-ALD process at 200 °C substrate temperature after postdeposition anneal (PDA) in forming gas at 450 °C. The PDA works very effectively for both the PE-ALD and T-ALD at 200 °C substrate temperature delivering also similar values of negative fixed charge density (N fix) around -2.5 × 1012 cm-2. At the substrate temperature of 150 °C, highest N fix (-2.9 × 1012 cm-2) and moderate D it (2.7 × 1011 eV-1 cm-2) values were observed. The as deposited PE-ALD layer at RT shows both low D it in the range of (1 to 3) × 1011 eV-1 cm-2 and low N fix (-4.4 × 1011 cm-2) at the same time. The dependencies of N fix, D it, and relative permittivity on the substrate temperatures and its adjustability are discussed.}, language = {en} } @misc{RichterStarkeSchmeisser, author = {Richter, Matthias and Starke, Ulrich and Schmeißer, Dieter}, title = {Multiple Auger processes in Graphene}, series = {Journal of Electron Spectroscopy and Related Phenomena}, journal = {Journal of Electron Spectroscopy and Related Phenomena}, number = {Vol. 192}, issn = {0368-2048}, doi = {10.1016/j.elspec.2013.12.009}, pages = {1 -- 6}, abstract = {Resonant Auger decay processes have been studied by resonant photoemission spectroscopy (resPES) and X-ray absorption spectroscopy (XAS) in Graphene systems. The pi*-resonance is used to identify the degree of localization of the lowest pi*-orbitals in the conduction band. Localization and lifetime of the photo-excited intermediate state cause the formation of multiple Auger processes. For the Graphene systems we identify two novel Auger decay combinations with a four hole final state: the (S+S) and the(S+S)* decay. We demonstrate that these processes are sensitive for interlayer coupling and interactions with the metallic free electrons of the substrate.}, language = {en} } @misc{TallaridaDasSchmeisser, author = {Tallarida, Massimo and Das, Chittaranjan and Schmeißer, Dieter}, title = {Quantum size effects in TiO2 thin films grown by atomic layer deposition}, series = {Beilstein Journal of Nanotechnology}, journal = {Beilstein Journal of Nanotechnology}, number = {5}, issn = {2190-4286}, doi = {10.3762/bjnano.5.7}, pages = {77 -- 82}, abstract = {We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 {\AA}/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.}, language = {en} } @misc{RichterFriedrichSchmeisser, author = {Richter, Matthias and Friedrich, Daniel and Schmeißer, Dieter}, title = {Interlayer-exciton mediated three-hole-Auger-decay in the pi-band of highly oriented pyrolytic graphite}, series = {Physica E}, volume = {Vol. 56}, journal = {Physica E}, issn = {1386-9477}, doi = {10.1016/j.physe.2013.01.015}, pages = {441 -- 446}, abstract = {Resonant photoemission spectroscopy(resPES) is used to probe the occupied pi- and unoccupied pi*-bands of carbon thin films with particular focus on the Auger decay. Highly Oriented Pyrolytic Graphite (HOPG) is studied at the C1s edge. We find strong resonant features at 285.5 eV and 292 eV in the resPES diagram. The normal two-hole Auger decay proceeds under constant kinetic energy (451)only in the sigma*-region. In the pi*-region, however, it proceeds under 67.5° in terms of a Ebind(w) diagram. We attribute this to a multiple Auger decay with a net three hole final state. For this novel decay process we propose a model.We discuss the long lifetime of the first resonant excitation and conclude that it arises from the strong excitonic character of the first resonant state. We use HOPG as a reference system and suggest that this novel process is a tool to identify interlayer-substrate interaction of the carbon layers involved.}, language = {en} }