@article{ViehwegerSimonWagneretal., author = {Viehweger, Bernd and Simon, Sylvio and Wagner, Lothar and Schmeißer, Dieter}, title = {Entwicklung eines neuartigen F{\"u}geverfahrens f{\"u}r die Herstellung von Aluminium-Stahl-Tailored Blanks}, abstract = {Die Anwendung von Tailored Blanks im Karosseriebau tr{\"a}gt wesentlich zur Gewichtsreduzierung und damit zur Kraftstoffeinsparung an Fahrzeugen bei. Bisher bekannte Tailored Blanks aus Aluminium und Stahl werden mittels Laserschweißen {\"u}berlappend gef{\"u}gt. F{\"u}r ein Aluminium-Stahl-Tailored Blank wurde ein Verfahren entwickelt, das die Herstellung desselben durch ein umformendes F{\"u}geverfahren erm{\"o}glicht. Unter Ber{\"u}cksichtigung der Erkenntnisse des Kaltpressschweißens wird mittels eines Walzvorganges eine F{\"u}gung erreicht. Dadurch wird ein Aufschmelzen der F{\"u}gepartner und die damit eventuell verbundene Bildung interkristalliner Zonen verhindert. Der Walzvorgang verhindert gleichzeitig die bei Kaltpressschweißen sonst {\"u}blichen Kerben. Durch eine anschließende W{\"a}rmebehandlung l{\"a}sst sich die Festigkeit der Verbindung steigern. Das Aluminium-Stahl-Tailored Blank kann in verschiedenen Abmessungen gefertigt werden und ist blecheben.}, language = {de} } @article{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Si(001) surface oxidation by N2O}, abstract = {Ultra-thin homogeneous oxynitride films are prepared on Si(001). The Si surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N2Oat altered temperatures. Thus oxynitride layers of different thickness and different properties are grown depending on the N2O pressure and the Si temperature. This isillustrated by a schematic diagram. The properties of the different oxynitride layers were studied by a combined photoemission electron microscopy (PEEM) andphotoelectron spectroscopy (PES) investigation using highly monochromatic synchrotron radiation. The amount of oxygen and nitrogen incorporated in the oxynitridelayers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images.}, language = {en} } @article{MikaloSchmeisser, author = {Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Electric contacts on conductive polymers: sodium on poly(3-hexylthiophene-2,5-diyl)}, abstract = {Sodium as a model contact with low work function on regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) films was investigated. The interface was studied by X-rayand ultraviolet photoelectron spectroscopy in the range of 0.13 up to 1.8 metal atoms per hexylthiophene unit. In the range of 0.13-0.26 sodium atoms per hexylthiophenering we find a change inthe surface potentials which is interpreted as a discharge of positive surface charges. Sodium exposures above 0.5 sodium atoms perhexylthiophene unit exhibit a reduction of the thiophene sulfur due to the formation of sodium sulfide and breaking of the thiophene ring.}, language = {en} } @article{YfantisPaloumpaSchmeisseretal., author = {Yfantis, Alexandros D. and Paloumpa, Ioanna and Schmeißer, Dieter and Yfantis, Alexandros D.}, title = {Novel corrosion-resistant films for Mg alloys}, abstract = {A novel method for the corrosion inhibition of Mg, alloys, based on the formation of a thin polyacrylic-polypyrrole film, is presented. The film was created after simpleimmersion of the samples in a specially formulated emulsion of polyacrylic and polypyrrole polymers. The synthesis conditions were studied, as well as the resultingcorrosion resistance of coated magnesium foils (AZ31) in terms of corrosion rate in neutral aqueous NaCl solutions. The relative ratio of polyacrylic polymer topolypyrrole was found to be important for the film properties. Furthermore, only in situ polymerisation of pyrrole in the polyacrylic emulsion can provide advancedcorrosion proper-ties in relatively thin films (2-5 mum). Blending of polypyrrole powder with the polyacrylic emulsion gives rise to thick films (20 mum) with reducedcorrosion-inhibition properties. The corrosion rate was only weakly dependent on the film thickness of these novel coatings. We argue that the mechanism of corrosioninhibition is related to the formation of a thin passive layer of chemisorbed polypyrrole polymers or oligomers on the native magnesium oxide of the C surface. Thestructure is further stabilised by polyacrylic polymer chains interacting as dopants of polypyrrole. The method is environmentally friendly: non-toxic chemicals are used,no rinsing is required, etc. The advanced corrosion-inhibition properties of the films. as well as the simple application process on the metal surface, provide significantpotential for the industrial application of the method.}, language = {en} } @misc{AggourStoerkelMurrelletal., author = {Aggour, Mohammed and Stoerkel, Ulrich and Murrell, Chris and Campbell, S. A. and Jungblut, H. and Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter and Lewerenz, Hans-Joachim}, title = {Electrochemical interface modification of CuInS2 thin films}, abstract = {We studied two novel electrochemical treatments of CuInS2 solar-cell absorber films, introduced to remove the deleterious segregated CuS phase. Their influence onsurface topography, chemistry and electronic properties was investigated using in situ atomic force microscopy (AFM) and photoclectron spectroscopy, performed inpart at the U49/2 undulator beam line at BESSY II. The results are examined in order to develop an improved understanding of the chemical-electrochemical surfacetransformation processes.}, language = {en} } @article{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {PEEM - a spectromicroscopic tool for mc-Si surface evaluation}, abstract = {The photo emission electron microscope (PEEM) with its direct imaging of the sample surface is a convenient tool for fast evaluation of large sample areas. It is possibleto handle samples with a size of 30 mm x 30 mm.With PEEM it is possible to visualise grain boundaries and crystal displacements without removing the native oxide. No special sample treatment is needed exceptchemical polishing of the sample surface and a HF-dip to obtain a thin (1 ... 2 nm) oxide layer.The quality of that oxide was proofed by high resolution photo electron spectroscopy (PES) at a synchrotron. The results were compared to native oxide onsingle-crystalline Si and no suboxides (e.g. SiO) were found. Our spectromicroscopic PEEM measurements show no difference in the oxide qualities of different grainsand on grain boundaries or crystal displacements. Furthermore no difference in the binding energy of Si2p core levels were found.In addition to grain boundaries other spot-like features were found on the sample surface. These could be identified in some cases as precipitation of Ca underneath thenative oxide.}, language = {en} } @misc{MuellerHenkelMikaloetal., author = {M{\"u}ller, Klaus and Henkel, Karsten and Mikalo, Ricardo Pablo and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Elektronik mit organischen Materialien}, publisher = {BTU Cottbus, Eigenverlag}, abstract = {Plastikelektronik, flexible Solarzellen, intelligente Kleidung, neuartige und maßgeschneiderte Transducer f{\"u}r die Gas-, Fl{\"u}ssigkeits- und Biosensorik, all dies sind Anwendungen, die ohne halbleitende Polymere nicht denkbar w{\"a}ren und die Bereiche erschließen, in denen zur Zeit eine regelrechte Goldgr{\"a}berstimmung herrscht. Mit wichtigen Beitr{\"a}gen im Grundlagen- und Anwendungsbereich nimmt die BTU Cottbus an dieser Entwicklung teil, u. a. auch durch eine Kooperation mit dem Institut f{\"u}r Mikrobiologie des Carl-Thiem-Klinikums Cottbus.In diesem Artikel werden die Voraussetzungen f{\"u}r die Konstruktion organischer Feldeffekt-Transistoren mit gassensitiver Gate-Elektrode vorgestellt. Untersuchungen zur elektronischen Struktur des organischen Halbleiters Poly(3-Hexylthiophen), die Anwendung dieses Materials als aktive Schicht in organischen Feldeffekt-Transitoren, die Gassensitivit{\"a}t von Polypyrrolelektroden auf Quarz-Mikrowaagen und die Mikrorstukturierung organischer Elektroden werden beschrieben.}, language = {de} } @incollection{SchwiertzHenkelPaloumpaetal., author = {Schwiertz, Carola and Henkel, Karsten and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Sensorsystem zur Unterscheidung von Geruchsmustern in Tierst{\"a}llen}, abstract = {Es wurde ein kontinuierlich arbeitendes, preiswertes Schwingquarz-Mess-System zur olfaktometrischen {\"U}berwachung von Tierst{\"a}llen aufgebaut, mit dessen Hilfe im Arbeitsbereich von 65\%B0C spezifische Ger{\"u}che verschiedener Tierarten unterschieden werden k{\"o}nnen. Zur Geruchsmustererkennung wurde ein einfaches neuronales Netz verwendet. Olfaktometrische Verd{\"u}nnungen auf 33\% sowie Messwertschwankungen von 5-10\% wurden simuliert, wobei die richtige Musterzuordnung durch das Netz nicht beeinflusst wurde.}, language = {de} } @incollection{HenkelHoffmannSchmeisser, author = {Henkel, Karsten and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Backpropagation-Netzwerke f{\"u}r ein Zweisensorsystem zur Erfassung von Kohlendioxidkonzentrationen und relativer Luftfeuchte}, series = {Sensoren im Fokus neuer Anwendungen : Verbraucherschutz und Lebensmittelkontrolle, Biosysteme und Nanobiotechnologie, Umweltmesstechnik, neue Sensormaterialien, Mess- und Eichwesen}, booktitle = {Sensoren im Fokus neuer Anwendungen : Verbraucherschutz und Lebensmittelkontrolle, Biosysteme und Nanobiotechnologie, Umweltmesstechnik, neue Sensormaterialien, Mess- und Eichwesen}, publisher = {w.e.b. Universit{\"a}tsverlag}, address = {Dresden}, isbn = {3-935712-71-5}, pages = {104 -- 107}, abstract = {Zwei Schwingquarzsensoren mit gleicher sensitiver Beschichtung wurden zur Messung von CO2-Konzentrationen bei variierenden Luftfeuchten genutzt. Die Daten wurden neuronalen Netzen mit unterschiedlicher Architektur trainiert. Zwei Netze wurden auf ihre Generalisierungsf{\"a}higkeit getestet und miteinander verglichen. F{\"u}r ein einstufiges Netz konnten Ergebnisse mit Fehlern kleiner 12\% f{\"u}r die CO2-Konzentration und kleiner 5\% f{\"u}r die Luftfeuchte erzielt werden. Ein zweistufiges Netz erkannte Kategorien der Luftfeuchte 100\%-ig, f{\"u}r die CO2-Konzentration wurden Fehler kleiner 9\% erreicht, wobei eine deutlich bessere Generalisierungsf{\"a}higkeit dieses Netzes im Vergleich zum einstufigen Netz zu verzeichnen ist.}, language = {de} } @inproceedings{MuellerHenkelPaloumpaetal., author = {M{\"u}ller, Klaus and Henkel, Karsten and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Low-cost-Plot-Technologie fur die Mikrostrukturierung von Gassensoren}, series = {Sensoren im Fokus neuer Anwendungen, 5. Dresdner Sensor-Symposium, 10. - 12. Dezember 2001, Dresden}, booktitle = {Sensoren im Fokus neuer Anwendungen, 5. Dresdner Sensor-Symposium, 10. - 12. Dezember 2001, Dresden}, publisher = {w.e.b. Universit{\"a}tsverlag}, address = {Dresden}, isbn = {3-935712-71-5}, pages = {166 -- 169}, abstract = {Bei der Herstellung von Mikrosensoren ist die Strukturierung von Elektroden oder elektrischen Zu-leitungen mit einem hohen Miniaturisierungsgrad ein entscheidender Punkt. Dazu m{\"u}s-sen h{\"a}ufig teure Verfahren (Lithographie, Maskentechniken) herangezogen werden.Dieser Beitrag beschreibt eine low-cost-Technologie zur Herstellung organischer Mikrostrukturen f{\"u}r elektronische und messtechnische Anwendungen im Bereich der Sensorik. Geplottete Strukturen mit Polypyrrol und Poly(3,4-Ethylen-Dioxy-Thiophen), dotiert mit Polystyrolsulfonat (PEDOT/PSS) wurden als Widerstandssensoren f{\"u}r die Detektion von Luftfeuchte ein-gesetzt. Die prinzipielle Ein-satzm{\"o}glichkeit unserer Technik im Bereich der organischen Elektronik konnten wir mit dem Bau organischer Feldeffekttransistoren nachweisen. Mit einem computergesteu-erten Plotter des Typs Rol-land DXY-1150A, Plot-Kapillaren f{\"u}r das Tuschezeichnen, handels{\"u}blichen Folien f{\"u}r wasserl{\"o}sliche Tinten als Substrat und kolloidalen Graphit als leitendes Material konnten wir Aufl{\"o}sungen, das heißt insbesondere Kanalbreiten bzw. Elektrodenabst{\"a}nde im Bereich von 20+10\%B5m (auf 2cm L{\"a}nge) her-stellen.}, language = {de} } @article{MuellerHoffmannMilkoetal., author = {M{\"u}ller, Klaus and Hoffmann, Patrick and Milko, S. and Burkov, Yevgen and Schmeißer, Dieter}, title = {PEEM and µ-NEXAFS of Cu-In-S-Surfaces}, abstract = {The composition of CuInS2-films tends to differ from the ideal ratio of 1:1:2. A molecularlyvariation of dm=[Cu]/[In]-1 not equal 0 occurs due to the formation of binary phases as segregation's at the surface, as crystallites in the bulk of the film or at the surface of grains [1]. Furthermore, the range of homogeneity of the phase CuInS2 is relatively large caused by a low enthalpy of formation of defects like Cu-vacancies [2]. Segregation's at surfaces can be removed by KCN etching or by an electrochemical process [3, 4] We investigated the effect of an in-situ-heat-treatment of samples, prepared in the Cu-rich regime with additional amounts of copper, deposited on the surface of the Cu-In-S-films.We used Cu-In-S-films on molybdenum, prepared from precursors of Cu/In and a following reactive annealing-process in a sulphur-atmosphere. The experiments were performed as follows: The surface of the films was cleaned in situ to remove CuS-Phases by Argon-bombardment. The thin layers of additional Copper were prepared by evaporation of copper metal in Knudsen-cells. The thickness of this copper-films is in the range of monolayers, revealed by a calibration with copper on iron-substrates. After this deposition the samples were heated up to several temperatures (up to 550 ºC) for ten minutes, respectively. Here the molybdenum back-contact was used as electrical heater.}, language = {en} } @article{BatchelorHoffmannSchmeisser, author = {Batchelor, David R. and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Photoemission study of Aluminium Steel cold welded joints}, abstract = {Aluminium and Stainless Steel bi-metal material is extremely versatile and is used in a wide range of products; from cooking utensils to high technology applications such as automobile manufacture and Synchrotron radiation instrumentation. As a consequence of this wide range of applications the study of the formation of Aluminium Steel junctions and the bonding mechanism is of considerable industrialimportance [1-3].In a previous publication [4] evidence for a chemical bond, alloying at the interface was found. As the monochromator focus and welded region are similar in size about 200 µm (the actual interface from SEM is an order of magnitude smaller) a simple photoemission experiment of translating the sample perpendicular (vertically, weld horizontal) to the weld and measuring spectra was performed.}, language = {en} } @article{JaeckelThissenHungeretal., author = {J{\"a}ckel, B. and Thißen, A. and Hunger, Ralf and Klein, A. and Jaegermann, Wolfram and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Focus IS-PEEM investigations at U49/II: experimental determination of a magnification function, the contrast mechanism and the spectral resolution}, language = {en} } @incollection{SchmeisserHoffmannMuessig, author = {Schmeißer, Dieter and Hoffmann, Patrick and M{\"u}ssig, Hans-Joachim}, title = {The Pr2O3/Si(001) interface: a mixed Si-Proxide}, series = {BESSY annual report 2001}, booktitle = {BESSY annual report 2001}, publisher = {Bessy}, address = {Berlin}, pages = {171 -- 173}, language = {en} } @article{SchmeisserHoffmann, author = {Schmeißer, Dieter and Hoffmann, Patrick}, title = {Characterisation of the PrOx/Si(001) Interface by Photoelectron Spectroscopy}, language = {en} } @article{SeyllerSieberGraupneretal., author = {Seyller, Th. and Sieber, N. and Graupner, R. and James, D. and Riley, J. and Leckey, R. and Polcik, M. and Schmeißer, Dieter}, title = {High Resolution Photoelectron Spectroscopy on SiC Surfaces}, language = {en} } @article{PopWinterBatcheloretal., author = {Pop, D. and Winter, B. and Batchelor, David R. and Freyer, W. and Weber, R. and Br{\"o}cker, D. and Hertel, I. V. and Schmeißer, Dieter and Widdra, Wolf}, title = {Copper Satellite Structure in Porphyrazine Compounds}, language = {en} } @article{GraciaMartinConcepcionBarrancoetal., author = {Gracia, F. and Martin-Concepcion, A. I. and Barranco, A. and Holgado, J. P. and Espinos, J. P. and Yubero, F. and Batchelor, David R. and Schmeißer, Dieter and Gonzalez-Elipe, A. R.}, title = {XAS investigation of texture in TiO2 thin films prepared by IBICVD}, language = {en} } @misc{BeerbomMayerJaegermannetal., author = {Beerbom, Martin and Mayer, Thomas and Jaegermann, Wolfram and Batchelor, David R. and Schmeißer, Dieter}, title = {Synchrotron-induced photoemission of GaAs electrodes after electrochemical treatment in aqueous electrolytes}, abstract = {Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using highresolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. Thespectra of the anodic oxide show strong emission of bulk-like Ga2O3 and some As2O3 with the admixture of suboxides and hydroxides. Ga2O3 and As2O3 arecathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides.}, language = {en} } @article{SieberSeyllerGraupneretal., author = {Sieber, N. and Seyller, Th. and Graupner, R. and Ley, L. and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {Wet-chemical preparation of silicate adlayer reconstructed SiC(0001) surfaces as studied by PIES and LEED}, abstract = {We have studied the surface chemistry of 6H-SiC(0001) and 6H-SiC (000 (1) over bar) after wet-chemical treatment using photoelectron spectroscopy (PES) andlow-energy electron diffraction (LEED). The origin of chemically shifted components in the Si2p and C1s spectra is discussed in the light of previous studies onwet-chemically prepared surfaces and on silicate adlayer reconstructed surfaces. On 6H-SiC(0001) an ordered silicate adlayer was prepared by etching the surface withsulfuric acid based agents.}, language = {en} } @misc{LewerenzAggourMurrelletal., author = {Lewerenz, Hans-Joachim and Aggour, Mohammed and Murrell, Chris and Kanis, M. and Hoffmann, Patrick and Jungblut, H. and Schmeißer, Dieter}, title = {Interface engineering of photoelectrochemically prepared Si surfaces}, abstract = {The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface.}, language = {en} } @article{BatchelorFollathSchmeisser, author = {Batchelor, David R. and Follath, Rolf and Schmeißer, Dieter}, title = {Commissioning Results of the BTUC-PGM beamline}, language = {en} } @misc{BoehmeLloydSpetzLundstroemetal., author = {B{\"o}hme, O. and Lloyd Spetz, Anita and Lundstr{\"o}m, Ingemar and Schmeißer, Dieter}, title = {Nanoparticles as the Active Element of High-Temperature Metal-Insulator-Silicon Carbide Gas Sensors}, series = {Advanced Materials}, volume = {13}, journal = {Advanced Materials}, number = {8}, issn = {1521-4095}, pages = {597 -- 601}, language = {en} } @misc{GuerekAppelMikaloetal., author = {G{\"u}rek, A. G. and Appel, G{\"u}nter and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Synthesis of dihydroxy silicon phthalocyanine tetrasulfonic acid and poly-µ-oxo silicon phthalocyanine tetrasulfonic acid}, series = {Journal of Porphyrins and Phthalocyanines}, volume = {5}, journal = {Journal of Porphyrins and Phthalocyanines}, number = {10}, issn = {1099-1409}, pages = {751 -- 757}, language = {en} } @misc{HenkelOpreaPaloumpaetal., author = {Henkel, Karsten and Oprea, A. and Paloumpa, Ioanna and Appel, G{\"u}nter and Schmeißer, Dieter and Kamieth, P.}, title = {Selective polypyrrole electrodes for quartz microbalances : NO2 and gas flux sensitivities}, series = {Sensors and Actuators : B, Chemical 76(2001)1-3}, volume = {76}, journal = {Sensors and Actuators : B, Chemical 76(2001)1-3}, number = {1-3}, issn = {0925-4005}, pages = {124 -- 129}, language = {en} } @misc{HoffmannMikaloYfantisetal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Yfantis, Alexandros D. and Batchelor, David R. and Appel, G{\"u}nter and Schmeißer, Dieter}, title = {A Spectro-Microscopic Approach for Thin Film Analysis Grain Boundaries in mc-Si and Sn/SnO2 Nano Particles}, series = {Microchimica Acta}, volume = {136}, journal = {Microchimica Acta}, number = {3-4}, issn = {1436-5073}, pages = {109 -- 113}, language = {en} } @article{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Band Bending in Doped Conducting Polypyrrole Interaction with Silver}, language = {en} } @article{MikaloAppelSchmeisser, author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Schmeißer, Dieter}, title = {Conductivity of Silver exposed Polypyrrole Films}, language = {en} } @article{MikaloHoffmannBatcheloretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter and Lloyd Spetz, Anita and Lundstr{\"o}m, Ingemar}, title = {Comparison of HF and ozone treated SiC surfaces}, language = {en} } @article{SchmeisserMikaloHoffmannetal., author = {Schmeißer, Dieter and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Seyller, Th. and Ley, L. and Lloyd Spetz, Anita}, title = {Oxide growth on SiC (0001) surfaces}, language = {en} } @article{SieberMantelSeylleretal., author = {Sieber, N. and Mantel, B. F. and Seyller, Th. and Ristein, J. and Ley, L. and Heller, Thomas and Batchelor, David R. and Schmeißer, Dieter}, title = {Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination}, language = {en} } @inproceedings{BatchelorBergSimonetal., author = {Batchelor, David R. and Berg, A. and Simon, Sylvio and Wagner, Lothar and Viehweger, Bernd and Schmeißer, Dieter}, title = {Development of Joining Techniques through Pressforming of Steel and Aluminium}, language = {en} } @inproceedings{HenkelEllingDanzetal., author = {Henkel, Karsten and Elling, B. and Danz, R. and B{\"u}chtemann, A. and Straube, Oliver and Paloumpa, Ioanna and Yfantis, Alexandros D. and Schmeißer, Dieter}, title = {Piezoelectric polymer sensor for high pressures in forming machines}, language = {en} } @inproceedings{HuleaHoffmannBrinzaetal., author = {Hulea, Iulian and Hoffmann, Patrick and Brinza, Monica and Batchelor, David R. and Schmeißer, Dieter}, title = {The interface of friction-welded Al-Fe joints. ATB Metallurgy}, language = {en} } @inproceedings{JaegermannSchmeisser, author = {Jaegermann, Wolfram and Schmeißer, Dieter}, title = {Elementary Processes at Solid/Electrolyte Interfaces}, language = {en} } @inproceedings{YfantisTsiniarakisLabrakopoulosetal., author = {Yfantis, Alexandros D. and Tsiniarakis, G. and Labrakopoulos, S. and Yfantis, Alexandros D. and Schmeißer, Dieter}, title = {Conductive polymers of pyrrole as pigments in organic anticorrosive coatings-application for aluminium alloys}, language = {en} } @misc{LewerenzAggourMurrelletal., author = {Lewerenz, Hans-Joachim and Aggour, Mohammed and Murrell, Chris and Kanis, M. and Jungblut, H. and Jakubowicz, J. and Cox, P. A. and Campbell, S. A. and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Initial stages of structure formation on silicon electrodes investigated by photoelectron spectroscopy using synchrotron radiation and in-situ atomic force microscopy}, series = {Journal of the Electrochemical Society}, volume = {150}, journal = {Journal of the Electrochemical Society}, number = {3}, issn = {1945-7111}, pages = {E185 -- E189}, abstract = {The surface condition of electrochemically H-terminated Si is compared with the situation at the first photocurrent maximum in dilute acidic ammonium fluoride solution where the divalent dissolution converts into the four-valence process. The first high spectral-resolution photoelectron spectroscopy data using synchrotron radiation of electrochemically hydrogenated Si are presented. A combined electrochemistry/ultrahigh vacuum surface analysis system, attached to the U 49/2 beamline at the synchrotron Bessy II, is used for photoelectron spectroscopy (PES) of the electrochemically conditioned samples. We analyze the Si 2p, O 1s, and F 1s core levels. A comparison of a density functional theory calculation of the reaction sequence, proposed in the dissolution model of Gerischer and co-workers, with the PES results supports this model. The anodized sample is characterized by a residual H coverage of 0.35 monolayers evidenced by a surface core level shift, Si-OH and Si-Fx species, F-, and a higher oxidized Si species. SiO2 is not found. Even on very well H-terminated surfaces, we find residual Si-OH complexes, fluoride and water. In situ atomic force microscopy shows a roughening with a root mean square roughness parameter of 2.6 nm. \%A92003 The Electrochemical Society. All rights reserved.}, language = {en} } @misc{HoffmannSchmeisserRotersetal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Roters, G. and Nenyei, Z.}, title = {Non-destructive probing of interfacial oxidation and nitridation states at RTA Si-oxides}, series = {Thin Solid Films}, volume = {428}, journal = {Thin Solid Films}, number = {1-2}, issn = {0040-6090}, pages = {216 -- 222}, abstract = {The quality of the SiO2/Si interface is of crucial importance in the development and performance of sub 0.1 small mu, Greekm technologies. The knowledge of the chemical composition of the interface is an important piece of information in the preparation of ultra-thin oxides and high-k dielectrics, in order to maintain a high-quality interface and channel mobility. Here we report on investigations of 2 nm oxide layers formed by a RTP process under various gas mixtures containing N2O and NH3 at different concentrations. We studied the SiO2/Si(001) interface by a non-destructive depth profiling using Synchrotron radiation photoelectron spectroscopy. We determine the thickness of the oxide layer, the relative content and chemical state of nitrogen within the oxide, the thickness of the interface layer, and the relative abundance of Si intermediate oxides within. In all systems we find the thickness of the intermediate layer to be approximately 0.17 nm. The intermediate layer contains Si atoms in the oxidation states +1, +2 and +3 with similar relative abundance. Nitrogen is found predominantly close to the intermediate layer forming Si---N as well as Si---N---O bonds. Within the oxide there are only spurious nitrogen content with predominately Si---N---O bonds. Our method is able to detect a nitrogen content within the intermediate layer as low as approximately 5\%.}, language = {en} } @article{SchmeisserPaloumpaHoffmannetal., author = {Schmeißer, Dieter and Paloumpa, Ioanna and Hoffmann, Patrick and Burkov, Yevgen and Yfantis, Alexandros D. and Yfantis, Alexandros D.}, title = {Preventing Corrosion of Aluminium Alloys by Polymeric Coatings}, abstract = {Aluminium is a material of everyday use in many applications,like automobile,aero-space or cookware,due to its specialproperties (low density,low weight,strength,easy to form and cast,abundance etc).Although aluminium is a reactive metal,italso has a significant corrosion resistance because of a thin,protective oxide layer which is generally stable in air and aqueous solutions.However,pores within the oxide film and other defects caused from alloying elements can lead to local corrosion and the formation of pits.}, language = {en} } @article{MuellerMilkoSchmeisser, author = {M{\"u}ller, Klaus and Milko, S. and Schmeißer, Dieter}, title = {Preparation of stoichiometric CuInS2-surfaces - an XPS, UPS-study}, series = {Thin Solid Films}, volume = {431-432}, journal = {Thin Solid Films}, issn = {0040-6090}, pages = {312 -- 316}, abstract = {CuInS2 films are investigated with photoelectron spectroscopy. We find significant deviation from the stoichiometric composition depending on the preparation on the films. For Cu-rich films (start composition) we show that by Ar sputtering and annealing the surface composition varies along a binary cut of the Cu-In-S ternary phase diagram. We also present a novel technique which brings the surface composition close to the stoichiometric stability range of the CuInS2 phase. The technique used the evaporation of Cu on the sputter cleaned surface.}, language = {en} } @misc{MuellerBurkovSchmeisser, author = {M{\"u}ller, Klaus and Burkov, Yevgen and Schmeißer, Dieter}, title = {PEEM and my-NEXAFS of Cu-In-S2-surfaces}, series = {Thin Solid Films}, volume = {431-432}, journal = {Thin Solid Films}, issn = {0040-6090}, pages = {307 -- 311}, abstract = {Polycrystalline CuInS2 samples are an ideal system for photoemission electron microscope studies. The polycrystalline grains have a diameter of approximately 5 small mu, Greekm and the system is expected to be highly inhomogeneous because of the existence of many sub-phases. We used a recently established procedure to reproducibly obtain stoichiometric CuInS2-surfaces and follow the changes in the morphology, the elemental inhomogeneous distribution, and the development of the electronic structure upon its preparation. We find that the individual grains trend to coagulate, the surface composition becomes more homogeneous, and identify characteristic features of the unoccupied DOS.}, language = {en} } @misc{Schmeisser, author = {Schmeißer, Dieter}, title = {Valence states of poly(3-hexyl-thiophene) as probed by photoelectron spectra at resonant excitation}, series = {Synthetic Metals}, volume = {138}, journal = {Synthetic Metals}, number = {1-2}, issn = {0379-6779}, pages = {135 -- 140}, abstract = {Photoelectron spectroscopy employing synchrotron radiation is applied to learn about the electronic structure of regio-regular poly(3-hexyl-thiophene) (P3hT). We study the valence band photoelectron spectra around the carbon 1s threshold. This technique is equivalent to resonant excitation of core electrons into empty valence states. We probe the properties of these carriers in the conduction band and also learn about valence band states involved in the carbon (K L L) Auger transitions. The data give evidence that monomeric orbital energies are dominating in such processes. We conclude that poly(3-hexyl-thiophene) is a polymer with a rather short conjugation length.}, language = {en} } @misc{MuellerPaloumpaSchmeisser, author = {M{\"u}ller, Klaus and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Carbon-plot-microstructuring for all-polymer-transistors}, series = {Synthetic Metals}, volume = {138}, journal = {Synthetic Metals}, number = {1-2}, issn = {0379-6779}, pages = {271 -- 273}, abstract = {This contribution describes the use of a low-cost technology to produce organic microstructures for electronically applications. With a computer driven plotter, substrates like printing foil and colloidal graphite (diluted in water) for the electrodes, we realised channel lengths of 20±10 microm. Compared with transistor devices, fabricated using conventional photolithographic methods and the same semiconducting material, this technique is a hopeful approach to produce microelectronic structures that are low-cost and all-organic.}, language = {en} } @misc{RiessSchmeisser, author = {Riess, W. and Schmeißer, Dieter}, title = {Organic Materials for Device Applications - Preface}, series = {Synthetic Metals}, volume = {138}, journal = {Synthetic Metals}, number = {1-2}, issn = {0379-6779}, pages = {S. 1}, language = {en} } @misc{SchmeisserPresselYamamotoetal., author = {Schmeißer, Dieter and Pressel, Klaus and Yamamoto, Yuji and Tillack, Bernd and Kr{\"u}ger, D.}, title = {Ge instabilities near interfaces in Si-SiGe-Si heterostructures}, series = {Materials Science \& Engineering B}, volume = {101}, journal = {Materials Science \& Engineering B}, number = {1-3}, issn = {0921-5107}, pages = {208 -- 211}, abstract = {Compositional characterization of interfaces in Si-cap/SixGe1-x/Si heterostructures is an important topic in SiGe based advanced microelectronics and in quantum wells. Extremely high depth resolution is required to detect and optimize near-interface compositional gradients which are crucial for high circuit performance. We report on non-destructive, high-resolution, near-interface depth profiling using SR photoelectron spectroscopy at an undulator beamline. We measured the Ge content at the SixGe1-x interface towards the native SiO2 layer and investigated the influence of additional (1nm and 2nm) Si capping layers (Si-cap). For the uncapped samples we found near the oxide/ SiGe interface region a strong mixing of Ge-oxides and SiOx. This indicates a high instability of the Ge atoms at those interfaces while silicon capped (1nm, 2nm) SixGe1-x films are more stable. We detect sharp Ge concentration gradients within the first 1nm at the Si/SixGe1-x interface. These results open new possibilities for Ge profile optimization in Si-cap/SixGe1-x/Si heterostructures. In the Ge3d spectra we differentiate the Ge atoms to occupy three different lattice sites and are able to follow their relative occupation within the Ge gradient.}, language = {en} } @misc{SchmeisserMuessig, author = {Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim}, title = {The Pr2O3 / Si (001) interface studied by synchrotron radiation photo-electron spectroscopy}, series = {Solid State Electronics}, volume = {47}, journal = {Solid State Electronics}, number = {10}, issn = {0038-1101}, pages = {1607 -- 1611}, abstract = {Pr2O3 is currently under consideration as a potential replacement for SiO2 as the gate-dielectric material for sub-0.1micro m complementary metal-oxide-semiconductor (CMOS) technology. We studied the Pr2O3/Si(0 0 1) interface by a non-destructive depth profiling using synchrotron radiation photoelectron spectroscopy. Our data suggests that there is no silicide formation at the interface. Based on reported results, a chemical reactive interface exists, consisting of a mixed Si-Pr oxide such as (Pr2O3)x(SiO2)1?x, i.e. as a silicate phase with variable silicon content. This pseudo-binary alloy at the interface offers large flexibility toward successful integration of Pr2O3 into future CMOS technologies.}, language = {en} } @misc{SchmeisserIrmscherWagner, author = {Schmeißer, Dieter and Irmscher, Klaus and Wagner, Gerd}, title = {Photoelectron spectra of Al dopants in 4H-SiC}, series = {Materials Science \& Engineering B}, volume = {102}, journal = {Materials Science \& Engineering B}, number = {1-3}, issn = {0921-5107}, pages = {284 -- 288}, abstract = {Al-doped 4H-SiC epitaxial layers were grown in a hot-wall chemical vapor deposition (CVD) system on commercial 4H-SiC substrates (CREE). The incorporation of Aluminum has been studied in the concentration range from 2*1014cm-3 up to 3*1020cm-3. Epitaxial layers with doping concentration NA-ND> 1019cm-3 were studied by HV-TEM and synchrotron radiation investigations. In the concentration range from 1*1019cm-3 to 3*1020 cm-3, measured by SIMS and Hall investigations, no Aluminum precipitation were detected in the grown layers. For SiC samples with an Al concentration of 1020cm-3 we have been able to detect the Al2p photoemission signal. The Al2p signal is recorded through the oxide layer (thickness of about 0.4nm), it has a main contribution at a binding energy of 73eV which corresponds to the energy typical for elemental Al0. In spectra excited with higher photon energies the sampled photoelectrons originate from deeper layers. In these data we notice an additional shoulder in the Al2p signal at around 71eV. The evidence of two contributions is attributed to the fact that Al is incorporated at different lattice sites. As the latter data represent more bulk like properties we argue that Al in the bulk SiC occupies both, substitutional lattice sites and interstitial sites while in the surface near regions Al is found only at substitutional lattice sites.}, language = {en} } @article{Schmeisser, author = {Schmeißer, Dieter}, title = {Resonant photoemission at the Pr2O3 /Si(001) interface}, abstract = {In resonant photoemission studies photoelectron spectroscopy (PES) is done at photon ener-giesthat enable the excitation from a deep core hole to the empty conduction band states. Atresonant condition only such states are selectively enhanced which allow an optical couplingof the core hole to the empty conduction band states. Information is to be gained from theshape of the particular resonance and by a comparison of the valence band data at excitationenergies off and on resonance. Such studies provide information on the electronic structure, inparticular how to separate individual contributions in the valence band and conduction bandregime.}, language = {en} } @incollection{MuellerBaerHenkeletal., author = {M{\"u}ller, Klaus and B{\"a}r, Werner and Henkel, Karsten and Jahnke, Agnes and Schwiertz, Carola and Schmeißer, Dieter}, title = {Organische Feldeffekttransistoren als Transducer in der Biosensorik}, publisher = {w.e.b.-Univ.-Verl.}, address = {Dresden}, isbn = {3-935712-92-8}, pages = {119 -- 223}, language = {de} } @misc{SchmeisserMuessig, author = {Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim}, title = {Stability and electronic properties of silicates in the system SiO2 - Pr2O3 - Si(001)}, series = {Journal of Physics: Condensed Matter}, volume = {16}, journal = {Journal of Physics: Condensed Matter}, number = {2}, issn = {1361-648X}, pages = {153 -- 160}, abstract = {Pr2O3 is one of the most promising hetero-oxides that are the candidates of choice to replace SiO2 as the gate dielectric material for sub-0.1 micrometer CMOS technology. In order to enable process integration, however, hetero-oxides require substantial characterization. In particular, the basic interaction mechanisms at the interface to the silicon substrate are the key issues. A solid knowledge of these mechanisms is required to address reliability arguments. The challenges in material science are to understand the chemical bonding of the hetero-oxides and Si on a microscopic scale. We report on the specific variations in the electronic structure which are evident in the valence band features around resonant excitation at the Pr 4d threshold. We also determine the valance band discontinuities at the Pr2O3/Si(001) interface and follow the changes in the surface potentials to develop a band scheme, a prerequisite to understanding the properties of charge transport across that interface.}, language = {en} } @article{PaloumpaYfantisHoffmannetal., author = {Paloumpa, Ioanna and Yfantis, Alexandros D. and Hoffmann, Patrick and Burkov, Yevgen and Yfantis, Alexandros D. and Schmeißer, Dieter}, title = {Mechanisms to inhibit corrosion of Al alloys by polymeric conversion coatings}, abstract = {We introduce a recently developed novel polypyrrole-based coating, which can be formed on the aluminium surface from an aqueous pyrrole solution of fluorozirconic and fluorotitanic acid neutralised with zinc oxide. The composite layer consists of polypyrrole (Ppy) chemisorbed on titanium and zinc oxides and exhibits advanced corrosion resistance. For the investigation of the structure and the corrosion mechanism of the composite corrosion resistant layer we use a photo-electron emission microscope (PEEM). PEEM is especially suitable because it can deliver topographic contrast as well as elemental contrast and chemical information in connection with a variable X-ray source. Additionally, in order to investigate further the corrosion mechanism, but also the role of the alloy in the corrosion process, we examine the aluminium samples with SEM/EDX. The structure of the corrosion resistant layer was investigated before and after accelerated corrosion tests. Our results pointed out the important role of titanium oxide and zinc in the corrosion resistance of our Ppy coating on aluminium.}, language = {en} } @misc{SchmeisserMuessigDabrowski, author = {Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim and Dabrowski, Jarek Marek}, title = {Silicate Layer Formation at the Pr2O3 / Si(001) Interfaces}, series = {Applied Physics Letters}, volume = {85}, journal = {Applied Physics Letters}, number = {1}, issn = {1077-3118}, pages = {88 -- 90}, abstract = {We studied Pr2O3/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1\%D710-8 mbar consists of a mixed Si-Pr oxide, such as (Pr2O3)(SiO)x(SiO2)y. Neither an interfacial SiO2 nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiOx layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr2O3 into future complementary metal-oxide-semiconductor technologies.}, language = {en} } @article{Schmeisser, author = {Schmeißer, Dieter}, title = {Covalent and localized contributions of Pr4f states at the interface of Pr2O3 to Si(001)}, abstract = {Resonant photoelectron spectroscopy (PES) at the Pr4d and O1 s absorption edges is used to study the electronic properties at the interface of epitaxially grown Pr2O3 on Si(001).In the electronic structure of bulk Pr2O3, the valence band (VB) states are predominant of Pr6s and O2p atomic parentage. The contribution of Pr4f states is identified from the strong increase of the VB features at the Pr4d resonances. The data at the O1s edge are caused by Raman scattering and resonant Auger decay and reflect the existence of charge transfer (CT) complexes. These complexes are the consequence of a mixed valency caused by ligand-to-Pr4f charge transfer states. The decrease of their intensity is attributed to an increase in covalent bandwidth between the ligand (O2p, Si3p) and Pr4f states. The CT complexes, originally localized now, become broadened and form gap states which fill the gap towards a metallic density of states. The metallic phase may be hindered upon alloying with SiO2 or other oxides.}, language = {en} } @misc{LupinaDabrowskiFormaneketal., author = {Lupina, Grzegorz and Dabrowski, Jarek Marek and Formanek, Peter and Schmeißer, Dieter and Sorge, Roland and Wenger, Christian and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations}, series = {Materials Science in Semiconductor Processing}, volume = {7}, journal = {Materials Science in Semiconductor Processing}, number = {4-6}, issn = {1369-8001}, pages = {215 -- 220}, abstract = {We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode.}, language = {en} } @misc{YfantisTzalasLambrakopoulosetal., author = {Yfantis, Alexandros D. and Tzalas, B. and Lambrakopoulos, S. and Anagnostaki, E. and Schmeißer, Dieter}, title = {New chrome free, environmentally friendly methods in chemical processes}, abstract = {It gives an overview of the research work to develop chrom-free methods in different chemical processes. A new class of materials, the conductive polymers, have been studied extensively for their anticorrosion properties.}, language = {en} } @misc{LewerenzMurrellJakubowiczetal., author = {Lewerenz, Hans-Joachim and Murrell, Chris and Jakubowicz, J. and Aggour, Mohammed and Kanis, M. and Campbell, S. A. and Cox, P. A. and Hoffmann, Patrick and Jungblut, H. and Schmeißer, Dieter}, title = {High Resolution Surface analysis of Si Roughenning in Dilute Ammonium Fluoride Solution}, series = {Journal of Electroanalytical Chemistry}, volume = {540}, journal = {Journal of Electroanalytical Chemistry}, issn = {1873-2569}, pages = {3 -- 6}, abstract = {The initial stages of porous Si formation on Si(111) in dilute ammonium fluoride solution are analysed by photoelectron spectroscopy using synchrotron radiation (SRPES). The PES results in the por-Si formation regime partly support a recent dissolution model. The contribution from the Si 2p surface core level shift shows that 0.35 ML of the surface is still H-terminated after interruption of the conditioning process at the first photocurrent maximum. Two signals shifted in binding energy by 0.8 and 1 eV, respectively, are attributed to reaction intermediates expected from the proposed reaction mechanism and from theoretical calculations using density functional theory (DFT). A distinct roughening is found in in-situ AFM measurements, with a calculated RMS roughness parameter of 2.6 nm.}, language = {en} } @misc{AppelAdeGuereketal., author = {Appel, G{\"u}nter and Ade, H. and G{\"u}rek, A. G. and Stadler, S. and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Orientation studies of Si-Phthalocyanines sulfonic acids cast on SiOx substrates}, series = {Applied Physics / A}, volume = {76}, journal = {Applied Physics / A}, number = {2}, issn = {1432-0630}, doi = {10.1007/s003390201320}, pages = {177 -- 182}, abstract = {Layers of dihydroxy silicon phthalocyanine tetrasulfonic acid and oligo-7-oxo silicon phthalocyanine tetrasulfonic acid were prepared by solution-casting methods. The purity of the material was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by angle-dependent near-edge X-ray absorption fine-structure spectroscopy. The morphology was characterized by atomic force microscopy. Most samples exhibited a significant orientation that was accompanied by crystalline structures; others had no orientation at all with a dominant amorphous morphology. This behavior indicates that several preparation parameters affect the crystallinity and the orientation of the phthalocyanines.}, language = {en} } @misc{MuellerGoryachkoBurkovetal., author = {M{\"u}ller, Klaus and Goryachko, Andriy and Burkov, Yevgen and Schwiertz, Carola and Ratzke, Markus and K{\"o}ble, J. and Reif, J{\"u}rgen and Schmeißer, Dieter}, title = {Scanning Kelvin Probe Microscopy and Photoemission electron microscopy of organic source-drain structures}, series = {Synthetic Metals}, volume = {146}, journal = {Synthetic Metals}, number = {3}, issn = {0379-6779}, pages = {377 -- 382}, abstract = {n order to optimize organic field effect transistors (OFETs), the characterisation of active-layer surfaces in terms of their roughness, chemical composition and distribution of surface potentials is important. We report on high-resolution microscopic mapping of organic source-drain structures with P3HT as the semiconductor by scanning Kelvin probe microscopy (SKPM) and photoemission electron microscopy (PEEM). It was shown that PEEM is able to characterise the surface morphology (roughness), the chemical homogeneity and the composition of organic structures. The two-dimensional mapping of surface potentials by SKPM with applied source-drain voltages is shown to be an important ingredient of OFETs failure mode analysis.}, language = {en} } @misc{MuessigDabrowskiWengeretal., author = {M{\"u}ssig, Hans-Joachim and Dabrowski, Jarek Marek and Wenger, Christian and Lupina, Grzegorz and Sorge, Roland and Formanek, Peter and Zaumseil, Peter and Schmeißer, Dieter}, title = {Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2}, series = {MRS Proceedings}, volume = {811}, journal = {MRS Proceedings}, issn = {1946-4274}, pages = {D7.10.}, language = {en} } @misc{SchmeisserMuessig, author = {Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim}, title = {Pr4f occupancy and VB/CB band offsets of Pr2O3 at the interface to Si(001) and SiC(0001) surfaces}, series = {MRS Proceedings}, volume = {811}, journal = {MRS Proceedings}, issn = {1946-4274}, pages = {D6.7}, language = {en} } @article{HoffmannSchmeisserSoinski, author = {Hoffmann, Patrick and Schmeißer, Dieter and Soinski, M. S.}, title = {Promieniowanie synchrotronowe jako uniwersalne narzedzie badawcze - Proby jego wykorzystania w badaniach struktury zeliwa}, language = {de} } @misc{YfantisPaloumpaSchmeisser, author = {Yfantis, Alexandros D. and Paloumpa, Ioanna and Schmeißer, Dieter}, title = {Corrosion Protection by Conductive Polymers for Magnesium Alloys}, series = {Magnesium, proceedings of the 6th International Conference on Magnesium Alloys and their Applications, November 2003 in Wolfsburg}, journal = {Magnesium, proceedings of the 6th International Conference on Magnesium Alloys and their Applications, November 2003 in Wolfsburg}, editor = {Kainer, Karl Ulrich}, publisher = {Wiley-VCH}, address = {Weinheim}, isbn = {3-527-30975-6}, pages = {605 -- 610}, abstract = {In this work, we present the experimental data related to the effect of the polypyrrole concentration and the film thickness on the corrosion inhibition properties of these novel polymer coatings. The relative corrosion resistance properties of the films formed from the matrix solutions, where polypyrrole was in situ polymerized and in cases where polypyrrole is dispersed in a form of powder (pigment) in the polyaclylic polymer, are further examined. The evaluation of the experimental data provides significant evidence regarding the mechanism of corrosion inhibition, as well as the optimization of the synthesis and application conditions.}, language = {en} } @inproceedings{SidorenkoTokarevKreneketal., author = {Sidorenko, Alexander and Tokarev, Igor and Krenek, Radim and Burkov, Yevgen and Schmeißer, Dieter and Minko, S. and Stamm, Manfred}, title = {Generation of Nanostructured Materials from Thin Films of Block Copolymer Assembles}, series = {Nano-architectured and manostructured materials, fabrication, control and properties, EUROMAT 2003}, booktitle = {Nano-architectured and manostructured materials, fabrication, control and properties, EUROMAT 2003}, editor = {Champion, Yannick and Fecht, Hans-J{\"o}rg}, publisher = {Wiley-VCH}, address = {Weinheim}, isbn = {3-527-31008-8}, pages = {143 -- 150}, language = {en} } @misc{TokarevKrenekBurkovetal., author = {Tokarev, Igor and Krenek, Radim and Burkov, Yevgen and Schmeißer, Dieter and Sidorenko, Alexander and Minko, Sergiy and Stamm, Manfred}, title = {Microphase separation in thin films of poly(styrene-block-4-vinylpyridine) Copolymer-2-(4-Hydroxybenzeneazo) benzoic Acid Assembly}, series = {Macromolecules}, volume = {38}, journal = {Macromolecules}, number = {2}, issn = {1520-5835}, pages = {507 -- 516}, abstract = {The fine structure of thin films of poly(styrene-block-4-vinylpyridine) copolymer-2-(4'-hydroxybenzeneazo)benzoic acid (PS-PVP+HABA) assembly has been studied using the combination of atomic force microscopy, ellipsometry, X-ray reflectivity, GISAXS, XPS, and XPEEM. The films consist of cylindrical nanodomains formed by PVP+HABA associates surrounded by PS matrix. Alignment of the domains can be switched upon exposure to vapors of different solvents from the parallel to perpendicular orientation and vice versa with respect to the surface plane. Swelling in 1,4-dioxane leads the system from the cylindrical to the spherical morphology. Solvent evaporation results in a shrinkage of the matrix in the vertical direction and subsequent merging of the spheres into the perpendicularly aligned cylinders. The cylinders form a regular hexagonal lattice with a spatial period of 25.5 nm. On the other hand, vapors of chloroform induce in-plane alignment. The films consist of parallel layers of the cylinders separated by PS matrix and demonstrate the fingerprint-like structure. The nanocylinders of PVP+HABA are packed into a distorted hexagonal lattice exhibiting 31 nm in plane and 17 nm vertical periodicity. In both cases a thin wetting layer is found at the polymer-substrate interface. The free surface is enriched with PS.}, language = {en} } @incollection{HenkelSchwiertzWagneretal., author = {Henkel, Karsten and Schwiertz, Carola and Wagner, S. and Valdeig, A. and List, M. and Schmeißer, Dieter}, title = {Partikel- und Tropfendetektion im Mikrometerbereich mittels Schwingquarzen}, publisher = {w.e.b.-Univ.-Verl.}, address = {Dresden}, isbn = {3-935712-92-8}, pages = {291 -- 294}, language = {de} } @misc{LamprakopoulosSchmeisserAnastassopoulouetal., author = {Lamprakopoulos, Stelios and Schmeißer, Dieter and Anastassopoulou, Jane and Theophanides, Theophile and Yfantis, Alexandros D.}, title = {An FTIR study of the role of H2O and D2O in the aging mechanism of conductive polypyrroles}, series = {Synthetic Metals}, volume = {144}, journal = {Synthetic Metals}, number = {3}, issn = {0379-6779}, doi = {10.1016/j.synthmet.2004.03.006}, pages = {229 -- 234}, abstract = {In the present work the role of H2O was studied by conductivity measurements and FTIR spectroscopy using the isotopic effect of deuterium in order to elucidate the aging mechanism of conductivity of polypyrroles. Polypyrrole was prepared with PTS as a dopant, by using deuterated water. Conductivity measurements showed changes due to structural water and atmospheric humidity. The FTIR absorption spectra indicated that the most probable structure of polypyrrole is the two-dimensional one. This finding could be attributed to the inhibition of polypyrrole's IR modes. The infrared spectrum analysis show that the gamma -NH bending mode of pyrrole has significantly changed after polymerization of pyrrole and this result is in accordance with XPS measurements.}, language = {en} } @article{Schmeisser, author = {Schmeißer, Dieter}, title = {Pr2O3/Si(001) interface reactions and stability}, abstract = {We show that an interfacial silicate is formed in a natural way between Si(0 0 1) and the deposited Pr2O3 film if a sufficient amount of oxygen is provided during deposition, as during electron beam evaporation from Pr6O11 source. We provide arguments from results of ab initio calculations and we present a ternary phase diagram of the Pr-O-Si system obtained for epitaxial films from non-destructive depth profiling data acquired by synchrotron radiation and photoelectron spectroscopy (SR-PES) at the undulator beam line U49/2-PGM2. The composition of the interfacial layer is (Pr2O3)(SiO)x(SiO2)y, with x+y between 2 and 6 and depends on the growth condition and distance from the substrate. No interfacial SiO2 and no interfacial silicide is formed during growth. The ternary phase diagram indicates that this non-stoichiometric pseudobinary alloy is stable on Si up to high temperatures, without phase separation into Pr2O3 and SiO2. Therefore, a complete re-engineering of the CMOS process may be not necessary.}, language = {en} } @misc{SidorenkoTokarevKreneketal., author = {Sidorenko, Alexander and Tokarev, Igor and Krenek, Radim and Burkov, Yevgen and Schmeißer, Dieter and Stamm, Manfred}, title = {XPEEM investigations of 2D hierachical array of Ni nanorods using block copolymer templates}, language = {de} } @article{Schmeisser, author = {Schmeißer, Dieter}, title = {Cooper minimum observed for the Pr5s and Pr5p states in Pr2O3}, language = {en} } @incollection{SchmeisserLupinaMuessig, author = {Schmeißer, Dieter and Lupina, Grzegorz and M{\"u}ssig, Hans-Joachim}, title = {High reactivity of Pr on oxide covered 4H-SiC}, series = {Bessy annual report 2003}, booktitle = {Bessy annual report 2003}, publisher = {Bessy}, address = {Berlin}, pages = {408 -- 409}, language = {en} } @article{Schmeisser, author = {Schmeißer, Dieter}, title = {Interface reactivity of Pr and SiO2 at 4H-SiC(0001)}, abstract = {We use photoelectron spectroscopy to characterize the reactivity of Pr evaporated on SiO2 covered 4H-SiC substrates. We analyze the Si2p, C1s, and O1s core levels and find that Pr reacts at RT with the SiO2 layer to form Pr-silicate. In addition also Pr-silizide is formed as well as Pr-carbides. While the latter are formed as reaction intermediates after Pr evaporation, the Pr-silicate layer is formed upon annealing to 300 °C and is stable up to 800 °C.}, language = {en} } @article{Schmeisser, author = {Schmeißer, Dieter}, title = {Pr4f occupancy and origin of gap states at the Pr2O3 / Si (001) interface}, language = {en} } @article{SeifarthBurkovGoryachkoetal., author = {Seifarth, Olaf and Burkov, Yevgen and Goryachko, Andriy and Schmeißer, Dieter and Sydorenko, Alexander and Krenek, Radim and Stamm, Manfred}, title = {Photoelectron spectroscopy and microscopy on Cr nano particels embedded into block copolymers}, language = {en} } @inproceedings{SchmeisserMuessig, author = {Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim}, title = {Pr-silicate formation on SiO2 covered 3C-SiC(111)}, series = {Physics of semiconductors, 27th International Conference on the Physics of Semiconductors}, booktitle = {Physics of semiconductors, 27th International Conference on the Physics of Semiconductors}, publisher = {AIP, American Inst. of Physics}, address = {New York, NY}, isbn = {0-7354-0257-4}, pages = {75 -- 76}, language = {en} } @article{WehnerSchmeisserHoffmann, author = {Wehner, Stefan and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Spatiotemporal patterns of external noise-induced transitions in a bistable reaction-diffusion system : Photoelectron Emission Microscopy experiments and modeling}, language = {en} } @misc{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Praseodymium silicate layers with atomically abrupt interface on Si(100)}, series = {Applied Physics Letters}, volume = {87}, journal = {Applied Physics Letters}, number = {5}, issn = {0003-6951}, pages = {S. 092901}, language = {en} } @article{GoryachkoYeromenkoHenkeletal., author = {Goryachko, Andriy and Yeromenko, Y. and Henkel, Karsten and Wollweber, J{\"u}rgen and Schmeißer, Dieter}, title = {The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth}, series = {Physica status solidi / A}, volume = {201}, journal = {Physica status solidi / A}, number = {2}, issn = {0031-8965}, pages = {245 -- 248}, abstract = {The intial stages of Si(001) interaction with C2H2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay.}, language = {en} } @article{GoryachkoPaloumpaBeuckertetal., author = {Goryachko, Andriy and Paloumpa, Ioanna and Beuckert, Guido and Burkov, Yevgen and Schmeißer, Dieter}, title = {The Interaction of Pr2O3 with 4H-SiC(0001)surface}, series = {Physica status solidi / C}, volume = {1}, journal = {Physica status solidi / C}, number = {2}, issn = {1610-1634}, pages = {265 -- 268}, abstract = {Praseodymium oxide (Pr2O3) as a hetero-oxide on SiC(0001) represents a promising semiconductor / high-K dielectric material combination. We prepared thin films (<3 nm) of Pr2O3 on 4H-SiC(0001) surfaces by a wet chemical process involving aqueous solutions of Pr(NO3)3. Synchrotron radiation photoelectron spectroscopy (SR-PES) is used to study the chemical composition of these films after deposition and annealing in 300-900 \%B0C range. The Si2p and C1s core level emissions are analysed in detail and reveal that praseodymium-silicate is formed at the interface. Our data are compared to corresponding studies of the Pr2O3 interaction with Si(001) surfaces.}, language = {en} } @misc{MuellerPaloumpaHenkeletal., author = {M{\"u}ller, Klaus and Paloumpa, Ioanna and Henkel, Karsten and Schmeißer, Dieter}, title = {A polymer high-k dielectric insulator for organic field effect Transistors}, series = {Journal of Applied Physics}, volume = {98}, journal = {Journal of Applied Physics}, number = {5}, issn = {0021-8979}, pages = {S. 056104}, language = {en} } @misc{HenkelSohalTorcheetal., author = {Henkel, Karsten and Sohal, Rakesh and Torche, Mohamed and Paloumpa, Ioanna and M{\"u}ller, Klaus and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Grenzfl{\"a}chenoptimierung f{\"u}r funktionale D{\"u}nnschichtsysteme: Oxide und Polymere}, series = {Forum der Forschung}, volume = {9}, journal = {Forum der Forschung}, number = {18}, issn = {0947-6989}, pages = {49 -- 56}, language = {de} } @misc{SchmeisserHimpselDenlingeretal., author = {Schmeißer, Dieter and Himpsel, Franz J. and Denlinger, Jonathan D. and Ederer, David L.}, title = {Resonante Photoemission an der Cu2p Kante von Cu und CuO}, series = {Forum der Forschung}, volume = {9}, journal = {Forum der Forschung}, number = {18}, issn = {0947-6989}, pages = {57 -- 62}, language = {de} } @incollection{SchmeisserHoffmannBeuckert, author = {Schmeißer, Dieter and Hoffmann, Patrick and Beuckert, Guido}, title = {Electronic Properties of the Interface Formed by Pr2o3 Growth on Si(001), Si(111)and SiC(0001) Surfaces}, editor = {Zschech, Ehrenfried and Whelan, Caroline}, language = {en} } @article{MuellerScheerSchmeisseretal., author = {M{\"u}ller, Klaus and Scheer, R. and Schmeißer, Dieter and Burkov, Yevgen}, title = {Preparation of stoichiometric CuInS2-Surfaces}, series = {Thin Solid Films}, volume = {451-452}, journal = {Thin Solid Films}, issn = {0040-6090}, pages = {120 -- 123}, language = {en} } @article{MuellerBurkovSchmeisser, author = {M{\"u}ller, Klaus and Burkov, Yevgen and Schmeißer, Dieter}, title = {Photo-Emission-Electron-Microscopy for Characterization of an Operating Organic Electronic Device}, language = {en} } @misc{HoffmannSchmeisser, author = {Hoffmann, Patrick and Schmeißer, Dieter}, title = {Improvement of Nitrogen Incorporation into Oxynitrides on 4H-SiC(0001)}, series = {Nuclear Instruments and Methods in Physics Research, Section B : Beam with Materials and Atoms}, volume = {246}, journal = {Nuclear Instruments and Methods in Physics Research, Section B : Beam with Materials and Atoms}, number = {1}, pages = {85 -- 89}, language = {en} } @inproceedings{Schmeisser, author = {Schmeißer, Dieter}, title = {Chemical Bonding in Low-k Dielectric Materials for Interconnect Isolation: Characterization using XAS and EELS}, language = {en} } @article{Schmeisser, author = {Schmeißer, Dieter}, title = {The Consequences of anisotropic Diffusion and Noise: PEEM at the CO Oxidation Reaction on Stepped Ir(111) Surfaces}, language = {en} } @article{MuellerPaloumpaSchmeisseretal., author = {M{\"u}ller, Klaus and Paloumpa, Ioanna and Schmeißer, Dieter and Henkel, Karsten}, title = {Organic thin film transistors with polymer high-k dielectric insulator}, language = {en} } @misc{SeifarthSchmeisserStammetal., author = {Seifarth, Olaf and Schmeißer, Dieter and Stamm, Manfred and Krenek, Radim and Sydorenko, Alexander}, title = {Electron spectroscopy and microscopy on chromium oxide nanowires on templated block copolymers}, series = {Progress in Solid State Chemistry}, volume = {34}, journal = {Progress in Solid State Chemistry}, number = {2-4}, issn = {0079-6786}, pages = {111 -- 119}, language = {en} } @inproceedings{HoffmannSchmeisserEngelmannetal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Engelmann, Hans-J{\"u}rgen and Zschech, Ehrenfried and Stegmann, Heiko and Himpsel, Franz J. and Denlinger, Jonathan D.}, title = {Characterization of chemical bonding in low-k dielectric materials for interconnect isolation: A XAS and EELS Study}, series = {Materials, technology and reliability of low-k dielectrics and copper interconnects, symposium held April 18 - 21, 2006, San Francisco, California}, booktitle = {Materials, technology and reliability of low-k dielectrics and copper interconnects, symposium held April 18 - 21, 2006, San Francisco, California}, editor = {Tsui, Ting Y.}, publisher = {Materials Research Society}, address = {Warrendale, Pa.}, isbn = {978-1-55899-870-5}, pages = {55 -- 62}, language = {en} } @inproceedings{SchmeisserZhengPerezDieste, author = {Schmeißer, Dieter and Zheng, Fan and Perez-Dieste, Virginia}, title = {Silicate Formation at the Interface of Pr-Oxide as a High-K Dielectric and Si(001) surfaces}, language = {en} } @inproceedings{DomaradzkiSchmeisserKaczmareketal., author = {Domaradzki, Jarosław and Schmeißer, Dieter and Kaczmarek, Danuta and Beuckert, Guido and Prociow, E. L. and Borkowska, Angnieszka and Kudrawiec, Robert and Misiewicz, J.}, title = {Characterization of Nanocrystalline TiO2 - HfO2 Thin Films Prepared by Low Pressure Hot Target Reactive Magnetron Sputtering}, language = {en} } @article{DomaradzkiKaczmarekSchmeisseretal., author = {Domaradzki, Jarosław and Kaczmarek, Danuta and Schmeißer, Dieter and Beuckert, Guido}, title = {Microstructure and Optical Properties of TiO2 Thin Films Prepared by Low Pressure Hot Target Reactive Magnetron Sputtering}, language = {en} } @inproceedings{SchmeisserZhengHimpseletal., author = {Schmeißer, Dieter and Zheng, Fan and Himpsel, Franz J. and Engelmann, Hans-J{\"u}rgen and Zschech, Ehrenfried}, title = {Silicate Formation at the Interface of High-k Dielectrics and Si(001) Surfaces}, language = {en} } @inproceedings{ZschechStegmannSchmeisseretal., author = {Zschech, Ehrenfried and Stegmann, Heiko and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Chemical Bonding, Permittivity, and Elastic Properties in Locally Modified Organosilicate Glass}, language = {en} } @article{HoffmannWehnerSchmeisser, author = {Hoffmann, Patrick and Wehner, Stefan and Schmeißer, Dieter}, title = {Noise-Induced Spatiotemporal Patterns in a Bistable Reaction-Diffusion System: Photoelectron Emission Microscopy experiments and Modeling of the CO Oxidation Reaction on Ir(111)}, language = {en} } @article{SchmittBiermanSchmeisseretal., author = {Schmitt, Andrew L. and Bierman, Matthew J. and Schmeißer, Dieter and Himpsel, Franz J. and Jin, Song}, title = {Synthesis and Properties of Single-Crystal FeSi Nanowires}, language = {en} } @article{SchmittZhuSchmeisseretal., author = {Schmitt, Andrew L. and Zhu, Lei and Schmeißer, Dieter and Himpsel, Franz J. and Jin, Song}, title = {Metallic Single-Crystal CoSi Nanowires via Chemical Vapor Deposition of Single-Source Precursor}, language = {en} } @article{LupinaSchroederSchmeisseretal., author = {Lupina, Grzegorz and Schroeder, Thomas and Schmeißer, Dieter and Dabrowski, Jarek Marek}, title = {Praseodymium Silicate Films on Si(100) for Gate Dielectric Applications: Physical and Electrical Characterization}, language = {en} } @inproceedings{TallaridaSchmeisserZheng, author = {Tallarida, Massimo and Schmeißer, Dieter and Zheng, Fan}, title = {X-ray Absorption and Photoemission Spectroscopy of 3C- and 4H-SiC}, language = {en} }