@inproceedings{RudolphFluckeSchniederetal., author = {Rudolph, Matthias and Flucke, Jens and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {On the magnetic coupling between bondwires in power-transistor packages}, language = {en} } @misc{RudolphKraemerSchmueckleetal., author = {Rudolph, Matthias and Kraemer, Tomas and Schm{\"u}ckle, Franz-Josef and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz}, language = {en} } @incollection{RudolphEngelmannSchmueckle, author = {Rudolph, Matthias and Engelmann, Jens and Schm{\"u}ckle, Franz-Josef}, title = {Large and packaged Transistors}, series = {Nonlinear Transistor Model Parameter Extraction Techniques}, booktitle = {Nonlinear Transistor Model Parameter Extraction Techniques}, editor = {Rudolph, Matthias and Root, David E. and Fager, Christian}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {171 -- 205}, language = {en} } @inproceedings{RudolphSchniederSchmueckleetal., author = {Rudolph, Matthias and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {An Analysis of Source Connections in GaN Power Transistor Packages}, series = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, booktitle = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, address = {Ilmenau}, isbn = {978-3-9812668-4-9}, pages = {4}, language = {en} } @misc{SchniederBengtssonSchmueckleetal., author = {Schnieder, Frank and Bengtsson, Olof and Schm{\"u}ckle, Franz-Josef and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description}, series = {IEEE transactions on microwave theory and techniques}, volume = {61}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, doi = {10.1109/TMTT.2013.2261089}, pages = {2603 -- 2609}, language = {en} } @misc{NosaevaAlSawafJohnetal., author = {Nosaeva, Ksenia and Al-Sawaf, Thualfiqa and John, Wilfred and Stoppel, Dimitri and Rudolph, Matthias and Schm{\"u}ckle, Franz-Josef and Janke, Bernd and Kr{\"u}ger, Olaf and Krozer, Viktor and Heinrich, Wolfgang and Weimann, Nils}, title = {Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer}, series = {IEEE Transactions on Electron Devices}, volume = {63}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2016.2533669}, pages = {1846 -- 1852}, language = {en} } @inproceedings{SchmueckleLenkHutteretal., author = {Schm{\"u}ckle, Franz-Josef and Lenk, Friedrich and Hutter, M. and Klein, M. and Oppermann, H. and Engelmann, G. and Topper, M. and Riepe, K. and Heinrich, Wolfgang}, title = {W-band flip-chip VCO in thin-film environment}, series = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, booktitle = {2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-8845-3}, doi = {10.1109/MWSYM.2005.1516837}, abstract = {A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE mismatch is not critical and an underfiller does not provide distinctive benefits. A 77 GHz VCO GaAs-HBT MMIC is flip-chip-mounted to demonstrate validity of the packaging scheme.}, language = {en} }