@misc{FischerAugelBerkmannetal., author = {Fischer, Inga Anita and Augel, Lion and Berkmann, Fritz and Kawaguchi, Yuma and Schlipf, Jon and Schulze, J{\"o}rg}, title = {Plasmonics-Integrated Ge PIN-Photodetectors}, series = {ECS Transactions}, volume = {93}, journal = {ECS Transactions}, number = {1}, issn = {1938-5862}, doi = {10.1149/09301.0041ecst}, pages = {41 -- 44}, language = {en} } @misc{AugelSchlipfBullertetal., author = {Augel, Lion and Schlipf, Jon and Bullert, Sergej and B{\"u}rzele, Sebastian and Schulze, J{\"o}rg and Fischer, Inga Anita}, title = {Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes}, series = {Scientific Reports}, journal = {Scientific Reports}, number = {11}, issn = {2045-2322}, doi = {10.1038/s41598-021-85012-z}, pages = {9}, abstract = {Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.}, language = {en} } @misc{SchlipfMartinStchakovskyetal., author = {Schlipf, Jon and Martin, Elena and Stchakovsky, Michel and Benedetti, Alessandro and Fischer, Inga Anita and Schulze, J{\"o}rg and Chiussi, Stefano}, title = {Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy}, series = {Journal of Vacuum Science \& Technology B}, volume = {37}, journal = {Journal of Vacuum Science \& Technology B}, number = {6}, issn = {2166-2754}, doi = {10.1116/1.5122777}, language = {en} } @misc{BergmannAyasseSchlipfetal., author = {Bergmann, Fritz and Ayasse, Markus and Schlipf, Jon and M{\"o}rz, Florian and Weißhaupt, David and Oehme, Michael and Prucnal, Slawomir and Kawaguchi, Yuma and Schwarz, Daniel and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Plasmonic gratings from highly doped Ge1-ySny films on Si}, series = {Journal of Physics D: Applied Physics}, volume = {54}, journal = {Journal of Physics D: Applied Physics}, number = {44}, issn = {1361-6463}, language = {en} } @misc{SchlipfFischer, author = {Schlipf, Jon and Fischer, Inga Anita}, title = {Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor}, series = {Optics Express}, volume = {Vol. 29}, journal = {Optics Express}, number = {22}, issn = {1094-4087}, doi = {10.1364/OE.438585}, pages = {36201 -- 36210}, language = {en} } @misc{HanReiterSchlipfetal., author = {Han, Weijia and Reiter, Sebastian and Schlipf, Jon and Mai, Christian and Spirito, Davide and Jose, Josmy and Wenger, Christian and Fischer, Inga Anita}, title = {Strongly enhanced sensitivities of CMOS compatible plasmonic titanium nitride nanohole arrays for refractive index sensing under oblique incidence}, series = {Optics Express}, volume = {31}, journal = {Optics Express}, number = {11}, issn = {1094-4087}, doi = {10.1364/OE.481993}, pages = {17389 -- 17407}, abstract = {Titanium nitride (TiN) is a complementary metal-oxide-semiconductor (CMOS) compatible material with large potential for the fabrication of plasmonic structures suited for device integration. However, the comparatively large optical losses can be detrimental for application. This work reports a CMOS compatible TiN nanohole array (NHA) on top of a multilayer stack for potential use in integrated refractive index sensing with high sensitivities at wavelengths between 800 and 1500 nm. The stack, consisting of the TiN NHA on a silicon dioxide (SiO2) layer with Si as substrate (TiN NHA/SiO2/Si), is prepared using an industrial CMOS compatible process. The TiN NHA/SiO2/Si shows Fano resonances in reflectance spectra under oblique excitation, which are well reproduced by simulation using both finite difference time domain (FDTD) and rigorous coupled-wave analysis (RCWA) methods. The sensitivities derived from spectroscopic characterizations increase with the increasing incident angle and match well with the simulated sensitivities. Our systematic simulation-based investigation of the sensitivity of the TiN NHA/SiO2/Si stack under varied conditions reveals that very large sensitivities up to 2305 nm per refractive index unit (nm RIU-1) are predicted when the refractive index of superstrate is similar to that of the SiO2 layer. We analyze in detail how the interplay between plasmonic and photonic resonances such as surface plasmon polaritons (SPPs), localized surface plasmon resonances (LSPRs), Rayleigh Anomalies (RAs), and photonic microcavity modes (Fabry-P{\´e}rot resonances) contributes to this result. This work not only reveals the tunability of TiN nanostructures for plasmonic applications but also paves the way to explore efficient devices for sensing in broad conditions.}, language = {en} } @misc{SchlipfTetznerSpiritoetal., author = {Schlipf, Jon and Tetzner, Henriette and Spirito, Davide and Manganelli, Constanza Lucia and Capellini, Giovanni and Huang, Michael R. S. and Koch, Christoph T. and Clausen, Caterina J. and Elsayed, Ahmed and Schulze, J{\"o}rg and Fischer, Inga Anita}, title = {Raman shifts in MBE-grown SixGe1 - x - ySny alloys with large Si content}, series = {Journal of Raman Spectroscopy}, journal = {Journal of Raman Spectroscopy}, issn = {1097-4555}, doi = {10.1002/jrs.6098}, pages = {9}, language = {en} } @misc{OleynikBerkmannReiteretal., author = {Oleynik, Paul and Berkmann, Fritz and Reiter, Sebastian and Schlipf, Jon and Ratzke, Markus and Yamamoto, Yuji and Fischer, Inga Anita}, title = {Strong Optical Coupling of Lattice Resonances in a Top-down Fabricated Hybrid Metal-Dielectric Al/Si/Ge Metasurface}, series = {Nano Letters}, volume = {24}, journal = {Nano Letters}, number = {10}, issn = {1530-6984}, doi = {10.1021/acs.nanolett.3c05050}, pages = {3142 -- 3149}, abstract = {Optical metasurfaces enable the manipulation of the light-matter interaction in ultrathin layers. Compared with their metal or dielectric counterparts, hybrid metasurfaces resulting from the combination of dielectric and metallic nanostructures can offer increased possibilities for interactions between modes present in the system. Here, we investigate the interaction between lattice resonances in a hybrid metal-dielectric metasurface obtained from a single-step nanofabrication process. Finite-difference time domain simulations show the avoided crossing of the modes appearing in the wavelength-dependent absorptance inside the Ge upon variations in a selected geometry parameter as evidence for strong optical coupling. We find good agreement between the measured and simulated absorptance and reflectance spectra. Our metasurface design can be easily incorporated into a top-down optoelectronic device fabrication process with possible applications ranging from on-chip spectroscopy to sensing.}, language = {en} } @misc{SchlipfBerkmannYamamotoetal., author = {Schlipf, Jon and Berkmann, Fritz and Yamamoto, Yuji and Reichenbach, Marc and Veleski, Mitko and Kawaguchi, Y. and M{\"o}rz, Florian and Tomm, Jens W. and Weißhaupt, David and Fischer, Inga Anita}, title = {Robust Si/Ge heterostructure metasurfaces as building blocks for wavelength-selective photodetectors}, series = {Applied Physics Letters}, volume = {122}, journal = {Applied Physics Letters}, number = {12}, issn = {1077-3118}, doi = {10.1063/5.0134458}, language = {en} }