@article{RudolphBeilenhoffDoerneretal., author = {Rudolph, Matthias and Beilenhoff, K. and D{\"o}rner, Ralf and Heymann, Peter}, title = {Scalable GaInP/GaAs HBT Large-Signal Model}, language = {en} } @inproceedings{LenkDoernerRumiantsevetal., author = {Lenk, Friedrich and D{\"o}rner, Ralf and Rumiantsev, Andrej and Rudolph, Matthias}, title = {Calibration Residual Error Propagation Analysis Using Conformal Mapping}, series = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, booktitle = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {978-1-61284-959-1}, pages = {Paper 2-4}, language = {en} } @incollection{RudolphEngelmannSchmueckle, author = {Rudolph, Matthias and Engelmann, Jens and Schm{\"u}ckle, Franz-Josef}, title = {Large and packaged Transistors}, series = {Nonlinear Transistor Model Parameter Extraction Techniques}, booktitle = {Nonlinear Transistor Model Parameter Extraction Techniques}, editor = {Rudolph, Matthias and Root, David E. and Fager, Christian}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {171 -- 205}, language = {en} } @inproceedings{RudolphSchniederSchmueckleetal., author = {Rudolph, Matthias and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {An Analysis of Source Connections in GaN Power Transistor Packages}, series = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, booktitle = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, address = {Ilmenau}, isbn = {978-3-9812668-4-9}, pages = {4}, language = {en} } @incollection{Rudolph, author = {Rudolph, Matthias}, title = {Introduction}, series = {Nonlinear transistor model parameter extraction techniques}, booktitle = {Nonlinear transistor model parameter extraction techniques}, editor = {Rudolph, Matthias and Fager, Christian and Root, David E.}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {1 -- 17}, language = {en} } @book{RohdeRudolph, author = {Rohde, Ulrich L. and Rudolph, Matthias}, title = {RF/Microwave Circuit Design for Wireless Applications}, edition = {2. ed.}, publisher = {Wiley}, address = {Hoboken, NJ}, isbn = {978-0-470-90181-6}, pages = {XIX, 893}, language = {en} } @inproceedings{RudolphDoernerNgnintedemetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Ngnintedem, Eric and Heinrich, Wolfgang}, title = {Noise Modeling of GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2302-4}, pages = {159 -- 162}, language = {en} } @inproceedings{AndreiDoernerBengtssonetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Bengtsson, Olof and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Highly Linear X-Band GaN-Based Low-Noise Amplifier}, series = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, booktitle = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4454-8}, language = {en} } @misc{SchniederRudolph, author = {Schnieder, Frank and Rudolph, Matthias}, title = {Thermal Coupling in AlGaN/GaN Power Transistors}, series = {Frequenz}, volume = {67}, journal = {Frequenz}, number = {1-2}, issn = {2191-6349}, doi = {10.1515/freq-2012-0031}, pages = {21 -- 26}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications}, series = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, journal = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-032-3}, pages = {280 -- 283}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Towards a Large-Signal Noise Model for GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, pages = {484 -- 487}, language = {en} } @misc{SchniederBengtssonSchmueckleetal., author = {Schnieder, Frank and Bengtsson, Olof and Schm{\"u}ckle, Franz-Josef and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description}, series = {IEEE transactions on microwave theory and techniques}, volume = {61}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, doi = {10.1109/TMTT.2013.2261089}, pages = {2603 -- 2609}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices}, series = {GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany}, booktitle = {GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany}, publisher = {VDE-Verl.}, address = {Berlin [u.a.]}, isbn = {978-3-8007-3585-3}, pages = {4}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Small- and large-signal modeling of InP HBTs in transferred-substrate technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {6}, journal = {International Journal of Microwave and Wireless Technologies}, number = {3-4}, doi = {10.1017/S1759078714000051}, pages = {243 -- 251}, language = {en} }