@inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Compact HBT modeling: status and challenges}, doi = {10.1109/MWSYM.2010.5517597}, language = {en} } @inproceedings{RudolphBengtssonBentetal., author = {Rudolph, Matthias and Bengtsson, Olof and Bent, G. van der and Heinigen, M. van and Vliet, F. F. van}, title = {GaN-HEMT VSWR Ruggedness and Amplifier Protection}, language = {en} } @inproceedings{RudolphMostardinhaCabraletal., author = {Rudolph, Matthias and Mostardinha, H. and Cabral, P. M. and Carvalho, N. B. and Kurpas, Paul and W{\"u}rfl, Joachim and Pinto, J. C. and Barnes, J. and Garat, F.}, title = {GaN RF Oscillator Used in Space Applications}, doi = {http://dx.doi.org/10.1109/INMMIC.2010.5480142}, language = {en} } @inproceedings{RudolphHeinrich, author = {Rudolph, Matthias and Heinrich, Wolfgang}, title = {Assessment of power-transistor package models: distributed versus lumped approach}, language = {en} } @misc{RudolphHeymannBoss, author = {Rudolph, Matthias and Heymann, Peter and Boss, Hermann}, title = {Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods}, doi = {http://dx.doi.org/10.1109/MMM.2010.937715}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Noise modeling of GaAs HBTs}, abstract = {Institutskolloquium, IHP Frankfurt (Oder), 2010}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Highly Robust GaN-Based Low-noise Amplifiers}, abstract = {Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, Darmstadt, 2010}, language = {en} } @book{Rudolph, author = {Rudolph, Matthias}, title = {Introduction to Modeling HBTs}, publisher = {Artech House}, address = {Boston, Mass.}, isbn = {1-58053-144-X}, language = {en} } @misc{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann}, isbn = {3-86537-328-3}, language = {en} } @book{Rudolph, author = {Rudolph, Matthias}, title = {Selected Topics on Microwave Measurements, Noise in Devices and Großsignalmodell f{\"u}r GaAs Hetero-Bipolar-Transistoren f{\"u}rLeistungsanwendungen in der Mobilkommunikation}, isbn = {3-89825-392-9}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Direct Extraction of HBT Equivalent Circuit Elements}, language = {en} } @article{RudolphRheinfelderBeisswangeretal., author = {Rudolph, Matthias and Rheinfelder, C. N. and Beißwanger, F. and Heinrich, Wolfgang}, title = {Nonlinear Modeling of SiGe HBTs up to 50 GHz}, language = {en} } @misc{RudolphAchoucheKrausetal., author = {Rudolph, Matthias and Achouche, M. and Kraus, S. and Spitzbart, Th. and Kurpas, Paul and Rentner, D. and Brunner, F. and Richter, E. and Bergunde, T. and Heymann, Peter and Wolter, P. and Wittrich, H. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InGaP/GaAs Power HBTs for L-Band Applications}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency}, series = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, booktitle = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {0-7803-5135-5}, pages = {741 -- 744}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {On the Gunn Effect in GaAs HBTs}, language = {en} }