@inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, booktitle = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-044-6}, doi = {10.1109/EuMIC.2016.7777514}, pages = {157 -- 160}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {GaN HEMTs for low-noise amplification — status and challenges}, series = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, booktitle = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-5862-4}, doi = {10.1109/INMMIC.2017.7927327}, pages = {4}, language = {en} } @misc{ApteRohdePoddaretal., author = {Apte, Anisha M. and Rohde, Ulrich L. and Poddar, Ajay K. and Rudolph, Matthias}, title = {Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator}, series = {IEEE Microwave Magazine}, volume = {18}, journal = {IEEE Microwave Magazine}, number = {4}, issn = {1527-3342}, doi = {10.1109/MMM.2017.2679998}, pages = {108 -- 123}, language = {en} } @inproceedings{RudolphAndreiDoerneretal., author = {Rudolph, Matthias and Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang}, title = {Noise in GaN HEMTs and Circuits}, series = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, booktitle = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-2760-6}, doi = {10.1109/ICNF.2017.7985978}, pages = {1 -- 4}, language = {en} } @inproceedings{BonaniRudolph, author = {Bonani, Fabrizio and Rudolph, Matthias}, title = {Simulating Noise in Nonlinear Circuits}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-6360-4}, doi = {10.1109/MWSYM.2017.8059085}, pages = {240 -- 243}, language = {en} } @inproceedings{AndreiDoernerChevtchenkoetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design}, series = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, booktitle = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-048-4}, doi = {10.23919/EuMIC.2017.8230705}, pages = {244 -- 247}, language = {en} } @inproceedings{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Noise modeling of transferred-substrate InP-DHBTs}, series = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, booktitle = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-3169-0}, doi = {10.1109/COMCAS.2017.8244768}, pages = {1 -- 4}, language = {en} } @inproceedings{NasserRitterRudolph, author = {Nasser, Caram and Ritter, Dan and Rudolph, Matthias}, title = {Bias dependence of the access resistance in GaN HEMTs}, series = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, booktitle = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-83-949421-1-3}, doi = {10.23919/MIKON.2018.8405197}, pages = {271 -- 273}, language = {en} } @inproceedings{LuoSchniederRudolph, author = {Luo, Peng and Schnieder, Frank and Rudolph, Matthias}, title = {Chalmers GaN HEMT charge model revisited}, series = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, booktitle = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-8-7}, doi = {10.23919/GEMIC.2018.8335055}, pages = {164 -- 167}, language = {en} } @inproceedings{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs}, series = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, booktitle = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-5067-7}, doi = {10.1109/MWSYM.2018.8439389}, pages = {728 -- 731}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {14th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {14th European Microwave Integrated Circuits Conference (EuMIC)}, address = {Paris, France}, isbn = {978-2-87487-056-9}, doi = {10.23919/EuMIC.2019.8909653}, pages = {240 -- 242}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {Proceedings of 49th European Microwave Conference (EuMC)}, journal = {Proceedings of 49th European Microwave Conference (EuMC)}, address = {Paris, France}, isbn = {978-2-87487-055-2}, doi = {10.23919/EuMC.2019.8910675}, pages = {794 -- 796}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected.}, language = {en} } @misc{NasserLuoSchniederetal., author = {Nasser, Caram and Luo, Peng and Schnieder, Frank and Rudolph, Matthias and Ritter, Dan}, title = {Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment}, series = {IEEE Transactions on Electron Devices}, volume = {66}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2019.2907484}, pages = {2146 -- 2150}, language = {en} } @misc{GriebelRudolphRohde, author = {Griebel, Wolfgang and Rudolph, Matthias and Rohde, Ulrich L.}, title = {Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon}, series = {IETE Journal of Research}, journal = {IETE Journal of Research}, issn = {0974-780X}, doi = {10.1080/03772063.2020.1847702}, pages = {1 -- 11}, language = {en} } @misc{AndreiRudolph, author = {Andrei, Cristina and Rudolph, Matthias}, title = {Properties of GaN LNAs for Front-End Applications}, series = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, journal = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology}, series = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, journal = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-7281-3517-5}, doi = {10.1109/APMC46564.2019.9038620}, pages = {222 -- 224}, language = {en} } @misc{ShivanKauleHossainetal., author = {Shivan, T. and Kaule, Evelyne and Hossain, M. and D{\"o}rner, Ralf and Johansen, Tom K. and Stoppel, Dimitri and Boppel, S. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias}, title = {Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {7}, issn = {1759-0795}, doi = {10.1017/S1759078719000515}, pages = {635 -- 644}, language = {en} } @misc{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Vadal{\`a}, Valeria and Raffo, Antonio and Heinrich, Wolfgang and Rudolph, Matthias}, title = {A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {2}, issn = {1759-0787}, doi = {10.1017/S1759078719000060}, pages = {121 -- 129}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, D. and Zhao, Zhixing and Lehmann, Steffen and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs}, series = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA}, journal = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA}, isbn = {978-1-7281-6809-8}, issn = {2375-0995}, doi = {10.1109/RFIC49505.2020.9218369}, pages = {131 -- 134}, language = {en} } @misc{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus}, isbn = {978-3-9820-3971-8}, issn = {2167-8022}, pages = {52 -- 55}, language = {en} } @misc{HuynhLeDuhanetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Duhan, Pardeep and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-3-9820-3971-8}, issn = {2167-8022}, pages = {244 -- 247}, language = {en} } @misc{ErkelenzSriperumbuduriFlisgenetal., author = {Erkelenz, Kevin and Sriperumbuduri, Venkata Pawan and Flisgen, Thomas and Rudolph, Matthias and Johansen, Tom K. and Heinrich, Wolfgang and Wentzel, Andreas}, title = {Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, isbn = {978-3-9820-3971-8}, pages = {268 -- 271}, language = {en} } @misc{KrauseBeleniotisBengtssonetal., author = {Krause, Sascha and Beleniotis, Petros and Bengtsson, Olof and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive}, series = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, journal = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, isbn = {978-1-6654-0307-8}, issn = {2576-7216}, doi = {10.1109/IMS19712.2021.9574839}, pages = {515 -- 518}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model}, series = {IEEE Transactions on Electron Devices}, volume = {68}, journal = {IEEE Transactions on Electron Devices}, number = {4}, issn = {1557-9646}, doi = {10.1109/TED.2021.3061318}, pages = {1446 -- 1453}, language = {en} } @book{VendelinPavioRohdeetal., author = {Vendelin, George D. and Pavio, Anthony M. and Rohde, Ulrich L. and Rudolph, Matthias}, title = {Microwave circuit design:using linear and nonlinear techniques}, edition = {Third edition}, publisher = {Wiley}, address = {Hoboken, N.J.}, isbn = {978-1-118-44975-2}, pages = {xix, 1174}, language = {en} } @misc{BeleniotisSchniederRudolph, author = {Beleniotis, Petros and Schnieder, Frank and Rudolph, Matthias}, title = {Simulating Drain Lag of GaN HEMTs with physics-based ASM Model}, series = {2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands}, journal = {2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands}, isbn = {978-2-87487-060-6}, pages = {165 -- 168}, language = {en} } @book{HeymannRudolph, author = {Heymann, Peter and Rudolph, Matthias}, title = {A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement}, publisher = {IEEE Press [u.a.]}, address = {Piscataway, NJ}, isbn = {978-1-119-85936-9}, pages = {xv, 496}, language = {en} } @misc{KrauseMichlerKoelpinetal., author = {Krause, Sascha and Michler, Fabian and K{\"o}lpin, Alexander and Rudolph, Matthias and Heinrich, Wolfgang}, title = {A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars}, series = {IEEE Microwave and Wireless Components Letters}, volume = {31}, journal = {IEEE Microwave and Wireless Components Letters}, number = {8}, issn = {1558-1764}, doi = {10.1109/LMWC.2021.3084338}, pages = {997 -- 1000}, language = {en} } @misc{RudolphApte, author = {Rudolph, Matthias and Apte, Anisha M.}, title = {Nonlinear Noise Modeling: Using Nonlinear Circuit Simulators to Simulate Noise in the Nonlinear Domain}, series = {IEEE Microwave Magazine}, volume = {22}, journal = {IEEE Microwave Magazine}, number = {7}, issn = {1557-9581}, doi = {10.1109/MMM.2021.3069538}, pages = {47 -- 64}, language = {en} } @misc{SriperumbuduriYacoubJohansenetal., author = {Sriperumbuduri, Venkata Pawan and Yacoub, Hady and Johansen, Tom K. and Wentzel, Andreas and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance}, series = {2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event}, journal = {2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-66540-307-8}, doi = {10.1109/IMS19712.2021.9575019}, pages = {355 -- 357}, language = {en} } @misc{ShresthaDoernerYacoubetal., author = {Shrestha, Amit and D{\"o}rner, Ralf and Yacoub, Hady and Johansen, Tom K. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias and Wentzel, Andreas}, title = {A 100 GHz Class-F-Like InP-DHBT PA with 25,4\%PAE}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783638}, pages = {225 -- 228}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, publisher = {IEEE}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783713}, pages = {22 -- 25}, language = {en} } @misc{KauleAndreiRudolph, author = {Kaule, Evelyne and Andrei, Cristina and Rudolph, Matthias}, title = {Output Power Limited Rugged GaN LNA MMIC}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EUMIC50153.2022.9784020}, pages = {133 -- 135}, language = {en} } @misc{HuynhLeLehmannetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Lehmann, Steffen and Zhao, Zhixing and Bossu, Germain and Arfaoui, Wafa and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783930}, pages = {382 -- 385}, language = {en} } @misc{HaqueSchniederHiltetal., author = {Haque, Sanaul and Schnieder, Frank and Hilt, Oliver and D{\"o}rner, Ralf and Brunner, Frank and Rudolph, Matthias}, title = {Noise Medeling of GaN/AIN HEMT}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783992}, pages = {185 -- 188}, language = {en} } @misc{BeleniotisChevtchenkoRudolph, author = {Beleniotis, Petros and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783780}, pages = {63 -- 66}, language = {en} } @misc{LeHuynhNayaketal., author = {Le, Quang Huy and Huynh, Dang Khoa and Nayak, Anurag and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9784055}, pages = {17 -- 20}, language = {en} } @misc{TomazGerlichRudolphetal., author = {Tomaz, Antonio and Gerlich, Stefan and Rudolph, Matthias and Andrei, Cristina}, title = {A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers}, series = {2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022}, journal = {2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022}, publisher = {IEEE}, isbn = {978-3-9820397-2-5}, issn = {2167-8022}, pages = {65 -- 68}, abstract = {A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup.}, language = {en} } @misc{KrauseZervosBeleniotisetal., author = {Krause, Sascha and Zervos, Christos and Beleniotis, Petros and Ritter, Dan and Rudolph, Matthias and Heinrich, Wolfgang}, title = {On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs}, series = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, journal = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-6654-9613-1}, doi = {10.1109/IMS37962.2022.9865474}, pages = {914 -- 917}, language = {en} } @misc{BeleniotisSchniederKrauseetal., author = {Beleniotis, Petros and Schnieder, Frank and Krause, Sascha and Haque, Sanaul and Rudolph, Matthias}, title = {An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT}, series = {International Journal of Microwave and Wireless Technologie}, volume = {14}, journal = {International Journal of Microwave and Wireless Technologie}, number = {2}, issn = {1759-0795}, doi = {10.1017/S1759078721001483}, pages = {134 -- 142}, language = {en} } @misc{ZervosBeleniotisRudolph, author = {Zervos, Christos and Beleniotis, Petros and Rudolph, Matthias}, title = {Prediction of the large-signal GaN HEMT performance using accurate TCAD-compact modeling method}, series = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, publisher = {IEEE}, doi = {10.23919/EuMIC61603.2024.10732230}, pages = {186 -- 189}, language = {en} } @misc{RaoWentzelHoffmannetal., author = {Rao, Megha Krishnaji and Wentzel, Andreas and Hoffmann, Thomas and Schellhase, Lars and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Digital GaN-based transceiver module for future green 5G networks}, series = {2024 54th European Microwave Conference (EuMC)}, journal = {2024 54th European Microwave Conference (EuMC)}, publisher = {IEEE}, doi = {10.23919/EuMC61614.2024.10732423}, pages = {136 -- 139}, language = {en} } @misc{ManchandaAndreiTostetal., author = {Manchanda, Prabhav and Andrei, Cristina and Tost, Frank and Rudolph, Matthias}, title = {A pHEMT based power detector for radar applications}, series = {2024 54th European Microwave Conference (EuMC)}, journal = {2024 54th European Microwave Conference (EuMC)}, publisher = {IEEE}, doi = {10.23919/EuMC61614.2024.10732043}, pages = {992 -- 995}, language = {en} } @misc{HaqueAndreiWolfetal., author = {Haque, Sanaul and Andrei, Cristina and Wolf, Mihaela and Hilt, Oliver and Rudolph, Matthias}, title = {Switch integrated Ka-Band low noise amplifier in GaN/AlN HEMT technology}, series = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, publisher = {IEEE}, doi = {10.23919/EuMIC61603.2024.10732731}, pages = {351 -- 354}, language = {en} } @misc{ZervosBeleniotisRudolph, author = {Zervos, Christos and Beleniotis, Petros and Rudolph, Matthias}, title = {A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs}, series = {Semiconductor Science and Technology}, volume = {39}, journal = {Semiconductor Science and Technology}, number = {9}, publisher = {IOP Publishing}, issn = {0268-1242}, doi = {10.1088/1361-6641/ad689c}, pages = {1 -- 8}, abstract = {Abstract This study provides an insight into the impact of thin purely undoped GaN channel thickness (t ch) on surface-related trapping effects in AlGaN/GaN high electron mobility transistors. Our TCAD study suggests that in cases where parasitic gate leakage is the driving trapping mechanism that promotes the injection of electrons from the Schottky gate contact into surface states, this effect can be alleviated by reducing t ch of the undoped GaN channel. We show that by decreasing t ch from 130 to 10 nm, devices exhibit a reduction in gate-related current collapse under the specific class-B RF operating bias conditions as a consequence of a substantial decrease in the off-state gate leakage with reducing t ch. Large-signal simulations revealed an increase by 3 W mm-1 and about 12\% output power and power-added efficiency due to the decrease of gate-related collapse. This work, for the first time, highlights the role of a proper purely undoped GaN t ch selection to alleviate gate-related surface trapping in the design of GaN-based microwave power amplifiers.}, language = {en} } @misc{BeleniotisKrauseZervosetal., author = {Beleniotis, Petros and Krause, Sascha and Zervos, Christos and Rudolph, Matthias}, title = {A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs}, series = {IEEE Transactions on Electron Devices}, volume = {71}, journal = {IEEE Transactions on Electron Devices}, number = {7}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3397234}, pages = {4058 -- 4065}, language = {en} } @misc{BeleniotisZervosKrauseetal., author = {Beleniotis, Petros and Zervos, Christos and Krause, Sascha and Chevtchenko, Serguei and Ritter, Dan and Rudolph, Matthias}, title = {Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD-compact model approach}, series = {IEEE Transactions on Electron Devices}, volume = {71 (2024)}, journal = {IEEE Transactions on Electron Devices}, number = {6}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3388386}, pages = {3582 -- 3589}, language = {en} } @misc{YazdaniZervosBeleniotisetal., author = {Yazdani, Hossein and Zervos, Christos and Beleniotis, Petros and Brusaterra, Enrico and Hilt, Oliver and Rudolph, Matthias and W{\"u}rfl, Joachim}, title = {Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps-Induced Drain Lag}, series = {Physica Status Solidi (a)}, journal = {Physica Status Solidi (a)}, publisher = {Wiley}, issn = {1862-6300}, doi = {10.1002/pssa.202300885}, pages = {1 -- 8}, abstract = {Drain lag is a well-known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high-electron-mobility transistors. Herein, it is demonstrated that a reduction of the gate-to-drain distance (Lgd) from 2.0 to 0.5 μm results in 7\% reduction in the current collapse. This improvement is attributed to a decrease in surface trapping, which, in this case, is found to have a greater impact on current collapse than relatively slow traps in the buffer layer. To support this argument, TCAD simulations are conducted. Load-pull analysis confirms that scaling the devices to Lgd = 0.5 μm provides 15\% better output power density at 10 GHz than Lgd = 2.0 μm. Additionally, a new passivation layer for reduced surface traps exhibits a 20 to 30\% higher output power density and at least a 10\% improvement in power-added efficiency at 20 GHz on a nominally identical GaN-on-semi-insulating SiC epi-wafer.}, language = {en} } @misc{RudolphBeleniotisZervosetal., author = {Rudolph, Matthias and Beleniotis, Petros and Zervos, Christos and Rohde, Ulrich L. and Andrei, Cristina}, title = {Determining GaN HEMT trap models from MHz load-line measurement : a case study}, series = {2024 15th German Microwave Conference (GeMiC)}, journal = {2024 15th German Microwave Conference (GeMiC)}, publisher = {IEEE}, doi = {10.23919/GeMiC59120.2024.10485297}, pages = {29 -- 32}, language = {en} }