@misc{LieroDewitzKuehnetal., author = {Liero, Armin and Dewitz, Mike and K{\"u}hn, Silvio and Chaturvedi, Nidhi and Xu, Jijun and Rudolph, Matthias}, title = {On the Recovery Time of Highly Robust Low-Noise Amplifiers}, series = {IEEE transactions on microwave theory and techniques}, volume = {58}, journal = {IEEE transactions on microwave theory and techniques}, number = {4}, issn = {0018-9480}, doi = {10.1109/TMTT.2010.2041519}, pages = {781 -- 787}, language = {en} } @inproceedings{RudolphAndreiLieroetal., author = {Rudolph, Matthias and Andrei, Cristina and Liero, Armin and Lossy, Richard and Heinrich, Wolfgang}, title = {Highly Linear Broadband GaN-based Low-noise Amplifier}, language = {en} } @inproceedings{RudolphFluckeSchniederetal., author = {Rudolph, Matthias and Flucke, Jens and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {On the magnetic coupling between bondwires in power-transistor packages}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Modeling GaN Power Transistors}, doi = {http://dx.doi.org/10.1109/WAMICON.2010.5461846}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Compact HBT modeling: status and challenges}, doi = {10.1109/MWSYM.2010.5517597}, language = {en} } @inproceedings{RudolphBengtssonBentetal., author = {Rudolph, Matthias and Bengtsson, Olof and Bent, G. van der and Heinigen, M. van and Vliet, F. F. van}, title = {GaN-HEMT VSWR Ruggedness and Amplifier Protection}, language = {en} } @inproceedings{RudolphMostardinhaCabraletal., author = {Rudolph, Matthias and Mostardinha, H. and Cabral, P. M. and Carvalho, N. B. and Kurpas, Paul and W{\"u}rfl, Joachim and Pinto, J. C. and Barnes, J. and Garat, F.}, title = {GaN RF Oscillator Used in Space Applications}, doi = {http://dx.doi.org/10.1109/INMMIC.2010.5480142}, language = {en} } @inproceedings{RudolphHeinrich, author = {Rudolph, Matthias and Heinrich, Wolfgang}, title = {Assessment of power-transistor package models: distributed versus lumped approach}, language = {en} } @misc{RudolphHeymannBoss, author = {Rudolph, Matthias and Heymann, Peter and Boss, Hermann}, title = {Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods}, doi = {http://dx.doi.org/10.1109/MMM.2010.937715}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Noise modeling of GaAs HBTs}, abstract = {Institutskolloquium, IHP Frankfurt (Oder), 2010}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Highly Robust GaN-Based Low-noise Amplifiers}, abstract = {Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, Darmstadt, 2010}, language = {en} } @book{Rudolph, author = {Rudolph, Matthias}, title = {Introduction to Modeling HBTs}, publisher = {Artech House}, address = {Boston, Mass.}, isbn = {1-58053-144-X}, language = {en} } @misc{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann}, isbn = {3-86537-328-3}, language = {en} } @book{Rudolph, author = {Rudolph, Matthias}, title = {Selected Topics on Microwave Measurements, Noise in Devices and Großsignalmodell f{\"u}r GaAs Hetero-Bipolar-Transistoren f{\"u}rLeistungsanwendungen in der Mobilkommunikation}, isbn = {3-89825-392-9}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Direct Extraction of HBT Equivalent Circuit Elements}, language = {en} } @article{RudolphRheinfelderBeisswangeretal., author = {Rudolph, Matthias and Rheinfelder, C. N. and Beißwanger, F. and Heinrich, Wolfgang}, title = {Nonlinear Modeling of SiGe HBTs up to 50 GHz}, language = {en} } @misc{RudolphAchoucheKrausetal., author = {Rudolph, Matthias and Achouche, M. and Kraus, S. and Spitzbart, Th. and Kurpas, Paul and Rentner, D. and Brunner, F. and Richter, E. and Bergunde, T. and Heymann, Peter and Wolter, P. and Wittrich, H. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InGaP/GaAs Power HBTs for L-Band Applications}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency}, series = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, booktitle = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {0-7803-5135-5}, pages = {741 -- 744}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {On the Gunn Effect in GaAs HBTs}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Lenk, Friedrich}, title = {Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, pages = {1967 -- 1970}, language = {en} } @inproceedings{LenkRudolph, author = {Lenk, Friedrich and Rudolph, Matthias}, title = {New Extraction Algorithm for GaAs-HBTs With Low Intrinsic Base Resistance}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {725 -- 728}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {997 -- 1000}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator}, language = {en} } @article{RudolphSchniederHeinrich, author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang}, title = {Modeling Emitter Breakdown in GaAs-Based HBTs}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs}, language = {en} } @misc{RudolphLenkLlopisetal., author = {Rudolph, Matthias and Lenk, Friedrich and Llopis, O. and Heinrich, Wolfgang}, title = {On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs}, series = {IEEE transactions on microwave theory and techniques}, volume = {54}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, pages = {2954 -- 2961}, language = {en} } @article{RudolphMeliani, author = {Rudolph, Matthias and Meliani, Chafik}, title = {On the Correlation between Eye-Diagram and Frequency Characteristics of GaAs-HBT TWAsfor 20 and 40 Gbps NRZ Signals}, language = {en} } @article{RudolphBehtashDoerneretal., author = {Rudolph, Matthias and Behtash, Reza and D{\"o}rner, Ralf and Hirche, Klaus and Wurfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Analysis of the Survivability of GaN Low-Noise Amplifiers}, language = {en} } @article{RudolphKorndoerferHeymannetal., author = {Rudolph, Matthias and Kornd{\"o}rfer, Falk and Heymann, Peter and Heinrich, Wolfgang}, title = {Compact Large-Signal Shot-Noise Model for HBTs}, language = {en} } @article{RudolphMelianiDoerneretal., author = {Rudolph, Matthias and Meliani, Chafik and D{\"o}rner, Ralf and Heinrich, Wolfgang}, title = {Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio}, language = {en} } @article{RudolphKhalilLieroetal., author = {Rudolph, Matthias and Khalil, I. and Liero, Armin and Lossy, Richard and Heinrich, Wolfgang}, title = {GaN HEMT Potential for Low Noise Highly Linear RF Applications}, language = {en} } @misc{RudolphBonani, author = {Rudolph, Matthias and Bonani, Fabrizio}, title = {Low-Frequency Noise in Nonlinear Systems: Its Impact on RF Performance and Implicationsfor Device Modeling and Circuit Simulation}, language = {en} } @misc{RudolphChaturvediHircheetal., author = {Rudolph, Matthias and Chaturvedi, Nidhi and Hirche, Klaus and Wurfl, K. and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Rugged 30 GHz GaN Low-Noise Amplifiers}, language = {en} } @misc{RudolphKraemerSchmueckleetal., author = {Rudolph, Matthias and Kraemer, Tomas and Schm{\"u}ckle, Franz-Josef and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz}, language = {en} } @article{RudolphTischlerKilketal., author = {Rudolph, Matthias and Tischler, Th. and Kilk, A. and Heinrich, Wolfgang}, title = {Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Large-Signal Modeling of High-Voltage GaAs Power HBTs}, language = {en} } @article{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study}, language = {en} } @article{RudolphBehtashHircheetal., author = {Rudolph, Matthias and Behtash, Reza and Hirche, Klaus and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier}, language = {en} } @misc{RudolphMelianiKurpasetal., author = {Rudolph, Matthias and Meliani, Chafik and Kurpas, Paul and Schmidt, L. and Rheinfelder, C. N. and Heinrich, Wolfgang}, title = {A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65\% PAE}, language = {en} } @article{RudolphHeymann, author = {Rudolph, Matthias and Heymann, Peter}, title = {On Compact HBT RF Noise Modeling}, language = {en} } @article{Rudolph, author = {Rudolph, Matthias}, title = {Limitations of Current Compact Transit-Time Models for III-V-Based HBTs}, language = {en} } @misc{RudolphDewitzLieroetal., author = {Rudolph, Matthias and Dewitz, Mike and Liero, Armin and Khalil, I. and Chaturvedi, Nidhi and Wipf, Christian and Bertenburg, R. M. and Miller, J. and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Robust X-Band LNA with Extremely Short Recovery Time}, language = {en} } @inproceedings{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter}, title = {New Algorithm for Extraction of FET Noise Model Parameters}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {New GaInP/GaAs-HBT Large-Signal Model for Power Applications}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Richter, E.}, title = {Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {A Universal Measurement System for Microwave Power Transistors}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer}, language = {en} } @inproceedings{RudolphKurpasBrunneretal., author = {Rudolph, Matthias and Kurpas, Paul and Brunner, F. and Doser, W. and Maaßdorf, Andre and D{\"o}rner, Ralf and Blanck, H. and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions}, language = {en} }