@misc{LieroDewitzKuehnetal., author = {Liero, Armin and Dewitz, Mike and K{\"u}hn, Silvio and Chaturvedi, Nidhi and Xu, Jijun and Rudolph, Matthias}, title = {On the Recovery Time of Highly Robust Low-Noise Amplifiers}, series = {IEEE transactions on microwave theory and techniques}, volume = {58}, journal = {IEEE transactions on microwave theory and techniques}, number = {4}, issn = {0018-9480}, doi = {10.1109/TMTT.2010.2041519}, pages = {781 -- 787}, language = {en} } @inproceedings{RudolphAndreiLieroetal., author = {Rudolph, Matthias and Andrei, Cristina and Liero, Armin and Lossy, Richard and Heinrich, Wolfgang}, title = {Highly Linear Broadband GaN-based Low-noise Amplifier}, language = {en} } @inproceedings{RudolphFluckeSchniederetal., author = {Rudolph, Matthias and Flucke, Jens and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {On the magnetic coupling between bondwires in power-transistor packages}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Modeling GaN Power Transistors}, doi = {http://dx.doi.org/10.1109/WAMICON.2010.5461846}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Compact HBT modeling: status and challenges}, doi = {10.1109/MWSYM.2010.5517597}, language = {en} } @inproceedings{RudolphBengtssonBentetal., author = {Rudolph, Matthias and Bengtsson, Olof and Bent, G. van der and Heinigen, M. van and Vliet, F. F. van}, title = {GaN-HEMT VSWR Ruggedness and Amplifier Protection}, language = {en} } @inproceedings{RudolphMostardinhaCabraletal., author = {Rudolph, Matthias and Mostardinha, H. and Cabral, P. M. and Carvalho, N. B. and Kurpas, Paul and W{\"u}rfl, Joachim and Pinto, J. C. and Barnes, J. and Garat, F.}, title = {GaN RF Oscillator Used in Space Applications}, doi = {http://dx.doi.org/10.1109/INMMIC.2010.5480142}, language = {en} } @inproceedings{RudolphHeinrich, author = {Rudolph, Matthias and Heinrich, Wolfgang}, title = {Assessment of power-transistor package models: distributed versus lumped approach}, language = {en} } @misc{RudolphHeymannBoss, author = {Rudolph, Matthias and Heymann, Peter and Boss, Hermann}, title = {Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods}, doi = {http://dx.doi.org/10.1109/MMM.2010.937715}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Noise modeling of GaAs HBTs}, abstract = {Institutskolloquium, IHP Frankfurt (Oder), 2010}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Highly Robust GaN-Based Low-noise Amplifiers}, abstract = {Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, Darmstadt, 2010}, language = {en} } @book{Rudolph, author = {Rudolph, Matthias}, title = {Selected Topics on Microwave Measurements, Noise in Devices and Großsignalmodell f{\"u}r GaAs Hetero-Bipolar-Transistoren f{\"u}rLeistungsanwendungen in der Mobilkommunikation}, isbn = {3-89825-392-9}, language = {en} } @inproceedings{RudolphHeymann, author = {Rudolph, Matthias and Heymann, Peter}, title = {The Influence of Microwave Two-Port Noise on Residual Phase Noise in GaAs-HBTs}, language = {en} } @inproceedings{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency}, series = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, booktitle = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {0-7803-5135-5}, pages = {741 -- 744}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Lenk, Friedrich}, title = {Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, pages = {1967 -- 1970}, language = {en} } @inproceedings{LenkRudolph, author = {Lenk, Friedrich and Rudolph, Matthias}, title = {New Extraction Algorithm for GaAs-HBTs With Low Intrinsic Base Resistance}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {725 -- 728}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {997 -- 1000}, language = {en} } @misc{RudolphLenkLlopisetal., author = {Rudolph, Matthias and Lenk, Friedrich and Llopis, O. and Heinrich, Wolfgang}, title = {On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs}, series = {IEEE transactions on microwave theory and techniques}, volume = {54}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, pages = {2954 -- 2961}, language = {en} } @misc{RudolphBonani, author = {Rudolph, Matthias and Bonani, Fabrizio}, title = {Low-Frequency Noise in Nonlinear Systems: Its Impact on RF Performance and Implicationsfor Device Modeling and Circuit Simulation}, language = {en} } @misc{RudolphChaturvediHircheetal., author = {Rudolph, Matthias and Chaturvedi, Nidhi and Hirche, Klaus and Wurfl, K. and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Rugged 30 GHz GaN Low-Noise Amplifiers}, language = {en} } @misc{RudolphKraemerSchmueckleetal., author = {Rudolph, Matthias and Kraemer, Tomas and Schm{\"u}ckle, Franz-Josef and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz}, language = {en} } @misc{RudolphDewitzLieroetal., author = {Rudolph, Matthias and Dewitz, Mike and Liero, Armin and Khalil, I. and Chaturvedi, Nidhi and Wipf, Christian and Bertenburg, R. M. and Miller, J. and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Robust X-Band LNA with Extremely Short Recovery Time}, language = {en} } @inproceedings{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter}, title = {New Algorithm for Extraction of FET Noise Model Parameters}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {New GaInP/GaAs-HBT Large-Signal Model for Power Applications}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions}, language = {en} } @inproceedings{RudolphSchniederHeinrichetal., author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang and Schnieder, Frank}, title = {Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs}, language = {en} } @incollection{RudolphEngelmannSchmueckle, author = {Rudolph, Matthias and Engelmann, Jens and Schm{\"u}ckle, Franz-Josef}, title = {Large and packaged Transistors}, series = {Nonlinear Transistor Model Parameter Extraction Techniques}, booktitle = {Nonlinear Transistor Model Parameter Extraction Techniques}, editor = {Rudolph, Matthias and Root, David E. and Fager, Christian}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {171 -- 205}, language = {en} } @inproceedings{RudolphSchniederSchmueckleetal., author = {Rudolph, Matthias and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {An Analysis of Source Connections in GaN Power Transistor Packages}, series = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, booktitle = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, address = {Ilmenau}, isbn = {978-3-9812668-4-9}, pages = {4}, language = {en} } @incollection{Rudolph, author = {Rudolph, Matthias}, title = {Introduction}, series = {Nonlinear transistor model parameter extraction techniques}, booktitle = {Nonlinear transistor model parameter extraction techniques}, editor = {Rudolph, Matthias and Fager, Christian and Root, David E.}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {1 -- 17}, language = {en} } @inproceedings{RudolphDoernerNgnintedemetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Ngnintedem, Eric and Heinrich, Wolfgang}, title = {Noise Modeling of GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2302-4}, pages = {159 -- 162}, language = {en} } @inproceedings{AndreiDoernerBengtssonetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Bengtsson, Olof and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Highly Linear X-Band GaN-Based Low-Noise Amplifier}, series = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, booktitle = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4454-8}, language = {en} } @misc{SchniederBengtssonSchmueckleetal., author = {Schnieder, Frank and Bengtsson, Olof and Schm{\"u}ckle, Franz-Josef and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description}, series = {IEEE transactions on microwave theory and techniques}, volume = {61}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, doi = {10.1109/TMTT.2013.2261089}, pages = {2603 -- 2609}, language = {en} } @misc{SchniederRudolph, author = {Schnieder, Frank and Rudolph, Matthias}, title = {Thermal Coupling in AlGaN/GaN Power Transistors}, series = {Frequenz}, volume = {67}, journal = {Frequenz}, number = {1-2}, issn = {2191-6349}, doi = {10.1515/freq-2012-0031}, pages = {21 -- 26}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Small- and large-signal modeling of InP HBTs in transferred-substrate technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {6}, journal = {International Journal of Microwave and Wireless Technologies}, number = {3-4}, doi = {10.1017/S1759078714000051}, pages = {243 -- 251}, language = {en} } @misc{AptePoddarRudolphetal., author = {Apte, Anisha M. and Poddar, Ajay K. and Rudolph, Matthias and Rohde, Ulrich L.}, title = {A Novel Low Phase Noise X-Band Oscillator}, series = {IEEE Microwave Magazine}, volume = {16}, journal = {IEEE Microwave Magazine}, number = {1}, issn = {1527-3342}, doi = {10.1109/MMM.2014.2367957}, pages = {127 -- 135}, language = {en} } @misc{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {Modeling Nonlinear White Noise in GaN HEMT Devices}, series = {Frequenz}, volume = {69}, journal = {Frequenz}, number = {1-2}, pages = {47 -- 55}, language = {en} } @misc{NosaevaWeimannRudolphetal., author = {Nosaeva, Ksenia and Weimann, Nils and Rudolph, Matthias and John, Wilfred and Kr{\"u}ger, Olaf and Heinrich, Wolfgang}, title = {Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer}, series = {Electronics Letters}, volume = {51}, journal = {Electronics Letters}, number = {13}, issn = {1350-911X}, doi = {10.1049/el.2015.1135}, pages = {1010 -- 1012}, language = {en} } @misc{NosaevaWeimannRudolphetal., author = {Nosaeva, Ksenia and Weimann, Nils and Rudolph, Matthias and John, Wilfred and Kr{\"u}ger, Olaf and Heinrich, Wolfgang}, title = {Thin ice: Diamond films could more than double the power output achievable with transistors in the 'Terahertz gap' by improving thermal management}, series = {Electronics Letters}, volume = {51}, journal = {Electronics Letters}, number = {13}, issn = {1350-911X}, doi = {10.1049/el.2015.1943}, pages = {S. 959}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany}, booktitle = {2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-7-0}, doi = {10.1109/GEMIC.2016.7461650}, pages = {441 -- 444}, language = {en} } @misc{NosaevaAlSawafJohnetal., author = {Nosaeva, Ksenia and Al-Sawaf, Thualfiqa and John, Wilfred and Stoppel, Dimitri and Rudolph, Matthias and Schm{\"u}ckle, Franz-Josef and Janke, Bernd and Kr{\"u}ger, Olaf and Krozer, Viktor and Heinrich, Wolfgang and Weimann, Nils}, title = {Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer}, series = {IEEE Transactions on Electron Devices}, volume = {63}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2016.2533669}, pages = {1846 -- 1852}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, booktitle = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-044-6}, doi = {10.1109/EuMIC.2016.7777514}, pages = {157 -- 160}, language = {en} } @misc{ApteRohdePoddaretal., author = {Apte, Anisha M. and Rohde, Ulrich L. and Poddar, Ajay K. and Rudolph, Matthias}, title = {Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator}, series = {IEEE Microwave Magazine}, volume = {18}, journal = {IEEE Microwave Magazine}, number = {4}, issn = {1527-3342}, doi = {10.1109/MMM.2017.2679998}, pages = {108 -- 123}, language = {en} } @misc{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Vadal{\`a}, Valeria and Raffo, Antonio and Heinrich, Wolfgang and Rudolph, Matthias}, title = {A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {2}, issn = {1759-0787}, doi = {10.1017/S1759078719000060}, pages = {121 -- 129}, language = {en} } @misc{NasserLuoSchniederetal., author = {Nasser, Caram and Luo, Peng and Schnieder, Frank and Rudolph, Matthias and Ritter, Dan}, title = {Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment}, series = {IEEE Transactions on Electron Devices}, volume = {66}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2019.2907484}, pages = {2146 -- 2150}, language = {en} } @misc{GriebelRudolphRohde, author = {Griebel, Wolfgang and Rudolph, Matthias and Rohde, Ulrich L.}, title = {Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon}, series = {IETE Journal of Research}, journal = {IETE Journal of Research}, issn = {0974-780X}, doi = {10.1080/03772063.2020.1847702}, pages = {1 -- 11}, language = {en} } @misc{AndreiRudolph, author = {Andrei, Cristina and Rudolph, Matthias}, title = {Properties of GaN LNAs for Front-End Applications}, series = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, journal = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model}, series = {IEEE Transactions on Electron Devices}, volume = {68}, journal = {IEEE Transactions on Electron Devices}, number = {4}, issn = {1557-9646}, doi = {10.1109/TED.2021.3061318}, pages = {1446 -- 1453}, language = {en} } @misc{KrauseMichlerKoelpinetal., author = {Krause, Sascha and Michler, Fabian and K{\"o}lpin, Alexander and Rudolph, Matthias and Heinrich, Wolfgang}, title = {A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars}, series = {IEEE Microwave and Wireless Components Letters}, volume = {31}, journal = {IEEE Microwave and Wireless Components Letters}, number = {8}, issn = {1558-1764}, doi = {10.1109/LMWC.2021.3084338}, pages = {997 -- 1000}, language = {en} } @misc{RudolphApte, author = {Rudolph, Matthias and Apte, Anisha M.}, title = {Nonlinear Noise Modeling: Using Nonlinear Circuit Simulators to Simulate Noise in the Nonlinear Domain}, series = {IEEE Microwave Magazine}, volume = {22}, journal = {IEEE Microwave Magazine}, number = {7}, issn = {1557-9581}, doi = {10.1109/MMM.2021.3069538}, pages = {47 -- 64}, language = {en} }