@misc{HaqueSchniederHiltetal., author = {Haque, Sanaul and Schnieder, Frank and Hilt, Oliver and D{\"o}rner, Ralf and Brunner, Frank and Rudolph, Matthias}, title = {Noise Medeling of GaN/AIN HEMT}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783992}, pages = {185 -- 188}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, publisher = {IEEE}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783713}, pages = {22 -- 25}, language = {en} } @misc{ShresthaDoernerYacoubetal., author = {Shrestha, Amit and D{\"o}rner, Ralf and Yacoub, Hady and Johansen, Tom K. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias and Wentzel, Andreas}, title = {A 100 GHz Class-F-Like InP-DHBT PA with 25,4\%PAE}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783638}, pages = {225 -- 228}, language = {en} } @misc{KauleAndreiRudolph, author = {Kaule, Evelyne and Andrei, Cristina and Rudolph, Matthias}, title = {Output Power Limited Rugged GaN LNA MMIC}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EUMIC50153.2022.9784020}, pages = {133 -- 135}, language = {en} } @misc{HuynhLeDuhanetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Duhan, Pardeep and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-3-9820-3971-8}, issn = {2167-8022}, pages = {244 -- 247}, language = {en} } @misc{ErkelenzSriperumbuduriFlisgenetal., author = {Erkelenz, Kevin and Sriperumbuduri, Venkata Pawan and Flisgen, Thomas and Rudolph, Matthias and Johansen, Tom K. and Heinrich, Wolfgang and Wentzel, Andreas}, title = {Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, isbn = {978-3-9820-3971-8}, pages = {268 -- 271}, language = {en} } @book{HeymannRudolph, author = {Heymann, Peter and Rudolph, Matthias}, title = {A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement}, publisher = {IEEE Press [u.a.]}, address = {Piscataway, NJ}, isbn = {978-1-119-85936-9}, pages = {xv, 496}, language = {en} } @misc{KrauseBeleniotisBengtssonetal., author = {Krause, Sascha and Beleniotis, Petros and Bengtsson, Olof and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive}, series = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, journal = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, isbn = {978-1-6654-0307-8}, issn = {2576-7216}, doi = {10.1109/IMS19712.2021.9574839}, pages = {515 -- 518}, language = {en} } @misc{BeleniotisSchniederRudolph, author = {Beleniotis, Petros and Schnieder, Frank and Rudolph, Matthias}, title = {Simulating Drain Lag of GaN HEMTs with physics-based ASM Model}, series = {2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands}, journal = {2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands}, isbn = {978-2-87487-060-6}, pages = {165 -- 168}, language = {en} } @book{VendelinPavioRohdeetal., author = {Vendelin, George D. and Pavio, Anthony M. and Rohde, Ulrich L. and Rudolph, Matthias}, title = {Microwave circuit design:using linear and nonlinear techniques}, edition = {Third edition}, publisher = {Wiley}, address = {Hoboken, N.J.}, isbn = {978-1-118-44975-2}, pages = {xix, 1174}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {14th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {14th European Microwave Integrated Circuits Conference (EuMIC)}, address = {Paris, France}, isbn = {978-2-87487-056-9}, doi = {10.23919/EuMIC.2019.8909653}, pages = {240 -- 242}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {Proceedings of 49th European Microwave Conference (EuMC)}, journal = {Proceedings of 49th European Microwave Conference (EuMC)}, address = {Paris, France}, isbn = {978-2-87487-055-2}, doi = {10.23919/EuMC.2019.8910675}, pages = {794 -- 796}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected.}, language = {en} } @article{RudolphBehtashHircheetal., author = {Rudolph, Matthias and Behtash, Reza and Hirche, Klaus and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier}, language = {en} } @misc{RudolphAchoucheKrausetal., author = {Rudolph, Matthias and Achouche, M. and Kraus, S. and Spitzbart, Th. and Kurpas, Paul and Rentner, D. and Brunner, F. and Richter, E. and Bergunde, T. and Heymann, Peter and Wolter, P. and Wittrich, H. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InGaP/GaAs Power HBTs for L-Band Applications}, language = {en} } @misc{RudolphMelianiKurpasetal., author = {Rudolph, Matthias and Meliani, Chafik and Kurpas, Paul and Schmidt, L. and Rheinfelder, C. N. and Heinrich, Wolfgang}, title = {A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65\% PAE}, language = {en} } @misc{RudolphWuerflKurpasetal., author = {Rudolph, Matthias and W{\"u}rfl, Joachim and Kurpas, Paul and Brunner, F. and Mai, M.}, title = {Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing}, language = {en} } @article{RudolphBeilenhoffDoerneretal., author = {Rudolph, Matthias and Beilenhoff, K. and D{\"o}rner, Ralf and Heymann, Peter}, title = {Scalable GaInP/GaAs HBT Large-Signal Model}, language = {en} } @article{Rudolph, author = {Rudolph, Matthias}, title = {Limitations of Current Compact Transit-Time Models for III-V-Based HBTs}, language = {en} } @article{RudolphHeymann, author = {Rudolph, Matthias and Heymann, Peter}, title = {On Compact HBT RF Noise Modeling}, language = {en} } @article{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study}, language = {en} }