@inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, booktitle = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-044-6}, doi = {10.1109/EuMIC.2016.7777514}, pages = {157 -- 160}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {GaN HEMTs for low-noise amplification — status and challenges}, series = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, booktitle = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-5862-4}, doi = {10.1109/INMMIC.2017.7927327}, pages = {4}, language = {en} } @misc{ApteRohdePoddaretal., author = {Apte, Anisha M. and Rohde, Ulrich L. and Poddar, Ajay K. and Rudolph, Matthias}, title = {Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator}, series = {IEEE Microwave Magazine}, volume = {18}, journal = {IEEE Microwave Magazine}, number = {4}, issn = {1527-3342}, doi = {10.1109/MMM.2017.2679998}, pages = {108 -- 123}, language = {en} } @inproceedings{RudolphAndreiDoerneretal., author = {Rudolph, Matthias and Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang}, title = {Noise in GaN HEMTs and Circuits}, series = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, booktitle = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-2760-6}, doi = {10.1109/ICNF.2017.7985978}, pages = {1 -- 4}, language = {en} } @inproceedings{BonaniRudolph, author = {Bonani, Fabrizio and Rudolph, Matthias}, title = {Simulating Noise in Nonlinear Circuits}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-6360-4}, doi = {10.1109/MWSYM.2017.8059085}, pages = {240 -- 243}, language = {en} } @inproceedings{AndreiDoernerChevtchenkoetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design}, series = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, booktitle = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-048-4}, doi = {10.23919/EuMIC.2017.8230705}, pages = {244 -- 247}, language = {en} } @inproceedings{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Noise modeling of transferred-substrate InP-DHBTs}, series = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, booktitle = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-3169-0}, doi = {10.1109/COMCAS.2017.8244768}, pages = {1 -- 4}, language = {en} } @inproceedings{NasserRitterRudolph, author = {Nasser, Caram and Ritter, Dan and Rudolph, Matthias}, title = {Bias dependence of the access resistance in GaN HEMTs}, series = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, booktitle = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-83-949421-1-3}, doi = {10.23919/MIKON.2018.8405197}, pages = {271 -- 273}, language = {en} } @inproceedings{LuoSchniederRudolph, author = {Luo, Peng and Schnieder, Frank and Rudolph, Matthias}, title = {Chalmers GaN HEMT charge model revisited}, series = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, booktitle = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-8-7}, doi = {10.23919/GEMIC.2018.8335055}, pages = {164 -- 167}, language = {en} } @inproceedings{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs}, series = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, booktitle = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-5067-7}, doi = {10.1109/MWSYM.2018.8439389}, pages = {728 -- 731}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {14th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {14th European Microwave Integrated Circuits Conference (EuMIC)}, address = {Paris, France}, isbn = {978-2-87487-056-9}, doi = {10.23919/EuMIC.2019.8909653}, pages = {240 -- 242}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {Proceedings of 49th European Microwave Conference (EuMC)}, journal = {Proceedings of 49th European Microwave Conference (EuMC)}, address = {Paris, France}, isbn = {978-2-87487-055-2}, doi = {10.23919/EuMC.2019.8910675}, pages = {794 -- 796}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected.}, language = {en} } @misc{NasserLuoSchniederetal., author = {Nasser, Caram and Luo, Peng and Schnieder, Frank and Rudolph, Matthias and Ritter, Dan}, title = {Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment}, series = {IEEE Transactions on Electron Devices}, volume = {66}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2019.2907484}, pages = {2146 -- 2150}, language = {en} } @misc{GriebelRudolphRohde, author = {Griebel, Wolfgang and Rudolph, Matthias and Rohde, Ulrich L.}, title = {Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon}, series = {IETE Journal of Research}, journal = {IETE Journal of Research}, issn = {0974-780X}, doi = {10.1080/03772063.2020.1847702}, pages = {1 -- 11}, language = {en} } @misc{AndreiRudolph, author = {Andrei, Cristina and Rudolph, Matthias}, title = {Properties of GaN LNAs for Front-End Applications}, series = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, journal = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology}, series = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, journal = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-7281-3517-5}, doi = {10.1109/APMC46564.2019.9038620}, pages = {222 -- 224}, language = {en} } @misc{ShivanKauleHossainetal., author = {Shivan, T. and Kaule, Evelyne and Hossain, M. and D{\"o}rner, Ralf and Johansen, Tom K. and Stoppel, Dimitri and Boppel, S. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias}, title = {Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {7}, issn = {1759-0795}, doi = {10.1017/S1759078719000515}, pages = {635 -- 644}, language = {en} } @misc{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Vadal{\`a}, Valeria and Raffo, Antonio and Heinrich, Wolfgang and Rudolph, Matthias}, title = {A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {2}, issn = {1759-0787}, doi = {10.1017/S1759078719000060}, pages = {121 -- 129}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, D. and Zhao, Zhixing and Lehmann, Steffen and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs}, series = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA}, journal = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA}, isbn = {978-1-7281-6809-8}, issn = {2375-0995}, doi = {10.1109/RFIC49505.2020.9218369}, pages = {131 -- 134}, language = {en} } @misc{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus}, isbn = {978-3-9820-3971-8}, issn = {2167-8022}, pages = {52 -- 55}, language = {en} } @misc{HuynhLeDuhanetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Duhan, Pardeep and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-3-9820-3971-8}, issn = {2167-8022}, pages = {244 -- 247}, language = {en} } @misc{ErkelenzSriperumbuduriFlisgenetal., author = {Erkelenz, Kevin and Sriperumbuduri, Venkata Pawan and Flisgen, Thomas and Rudolph, Matthias and Johansen, Tom K. and Heinrich, Wolfgang and Wentzel, Andreas}, title = {Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, isbn = {978-3-9820-3971-8}, pages = {268 -- 271}, language = {en} } @misc{KrauseBeleniotisBengtssonetal., author = {Krause, Sascha and Beleniotis, Petros and Bengtsson, Olof and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive}, series = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, journal = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, isbn = {978-1-6654-0307-8}, issn = {2576-7216}, doi = {10.1109/IMS19712.2021.9574839}, pages = {515 -- 518}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model}, series = {IEEE Transactions on Electron Devices}, volume = {68}, journal = {IEEE Transactions on Electron Devices}, number = {4}, issn = {1557-9646}, doi = {10.1109/TED.2021.3061318}, pages = {1446 -- 1453}, language = {en} } @book{VendelinPavioRohdeetal., author = {Vendelin, George D. and Pavio, Anthony M. and Rohde, Ulrich L. and Rudolph, Matthias}, title = {Microwave circuit design:using linear and nonlinear techniques}, edition = {Third edition}, publisher = {Wiley}, address = {Hoboken, N.J.}, isbn = {978-1-118-44975-2}, pages = {xix, 1174}, language = {en} } @misc{BeleniotisSchniederRudolph, author = {Beleniotis, Petros and Schnieder, Frank and Rudolph, Matthias}, title = {Simulating Drain Lag of GaN HEMTs with physics-based ASM Model}, series = {2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands}, journal = {2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands}, isbn = {978-2-87487-060-6}, pages = {165 -- 168}, language = {en} } @book{HeymannRudolph, author = {Heymann, Peter and Rudolph, Matthias}, title = {A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement}, publisher = {IEEE Press [u.a.]}, address = {Piscataway, NJ}, isbn = {978-1-119-85936-9}, pages = {xv, 496}, language = {en} } @misc{KrauseMichlerKoelpinetal., author = {Krause, Sascha and Michler, Fabian and K{\"o}lpin, Alexander and Rudolph, Matthias and Heinrich, Wolfgang}, title = {A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars}, series = {IEEE Microwave and Wireless Components Letters}, volume = {31}, journal = {IEEE Microwave and Wireless Components Letters}, number = {8}, issn = {1558-1764}, doi = {10.1109/LMWC.2021.3084338}, pages = {997 -- 1000}, language = {en} } @misc{RudolphApte, author = {Rudolph, Matthias and Apte, Anisha M.}, title = {Nonlinear Noise Modeling: Using Nonlinear Circuit Simulators to Simulate Noise in the Nonlinear Domain}, series = {IEEE Microwave Magazine}, volume = {22}, journal = {IEEE Microwave Magazine}, number = {7}, issn = {1557-9581}, doi = {10.1109/MMM.2021.3069538}, pages = {47 -- 64}, language = {en} } @misc{SriperumbuduriYacoubJohansenetal., author = {Sriperumbuduri, Venkata Pawan and Yacoub, Hady and Johansen, Tom K. and Wentzel, Andreas and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance}, series = {2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event}, journal = {2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-66540-307-8}, doi = {10.1109/IMS19712.2021.9575019}, pages = {355 -- 357}, language = {en} } @misc{ShresthaDoernerYacoubetal., author = {Shrestha, Amit and D{\"o}rner, Ralf and Yacoub, Hady and Johansen, Tom K. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias and Wentzel, Andreas}, title = {A 100 GHz Class-F-Like InP-DHBT PA with 25,4\%PAE}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783638}, pages = {225 -- 228}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, publisher = {IEEE}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783713}, pages = {22 -- 25}, language = {en} } @misc{KauleAndreiRudolph, author = {Kaule, Evelyne and Andrei, Cristina and Rudolph, Matthias}, title = {Output Power Limited Rugged GaN LNA MMIC}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EUMIC50153.2022.9784020}, pages = {133 -- 135}, language = {en} } @misc{HuynhLeLehmannetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Lehmann, Steffen and Zhao, Zhixing and Bossu, Germain and Arfaoui, Wafa and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783930}, pages = {382 -- 385}, language = {en} } @misc{HaqueSchniederHiltetal., author = {Haque, Sanaul and Schnieder, Frank and Hilt, Oliver and D{\"o}rner, Ralf and Brunner, Frank and Rudolph, Matthias}, title = {Noise Medeling of GaN/AIN HEMT}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783992}, pages = {185 -- 188}, language = {en} } @misc{BeleniotisChevtchenkoRudolph, author = {Beleniotis, Petros and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783780}, pages = {63 -- 66}, language = {en} } @misc{LeHuynhNayaketal., author = {Le, Quang Huy and Huynh, Dang Khoa and Nayak, Anurag and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9784055}, pages = {17 -- 20}, language = {en} } @misc{TomazGerlichRudolphetal., author = {Tomaz, Antonio and Gerlich, Stefan and Rudolph, Matthias and Andrei, Cristina}, title = {A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers}, series = {2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022}, journal = {2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022}, publisher = {IEEE}, isbn = {978-3-9820397-2-5}, issn = {2167-8022}, pages = {65 -- 68}, abstract = {A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup.}, language = {en} } @misc{KrauseZervosBeleniotisetal., author = {Krause, Sascha and Zervos, Christos and Beleniotis, Petros and Ritter, Dan and Rudolph, Matthias and Heinrich, Wolfgang}, title = {On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs}, series = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, journal = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-6654-9613-1}, doi = {10.1109/IMS37962.2022.9865474}, pages = {914 -- 917}, language = {en} } @misc{BeleniotisSchniederKrauseetal., author = {Beleniotis, Petros and Schnieder, Frank and Krause, Sascha and Haque, Sanaul and Rudolph, Matthias}, title = {An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT}, series = {International Journal of Microwave and Wireless Technologie}, volume = {14}, journal = {International Journal of Microwave and Wireless Technologie}, number = {2}, issn = {1759-0795}, doi = {10.1017/S1759078721001483}, pages = {134 -- 142}, language = {en} } @misc{ZervosBeleniotisRudolph, author = {Zervos, Christos and Beleniotis, Petros and Rudolph, Matthias}, title = {Prediction of the large-signal GaN HEMT performance using accurate TCAD-compact modeling method}, series = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, publisher = {IEEE}, doi = {10.23919/EuMIC61603.2024.10732230}, pages = {186 -- 189}, language = {en} } @misc{RaoWentzelHoffmannetal., author = {Rao, Megha Krishnaji and Wentzel, Andreas and Hoffmann, Thomas and Schellhase, Lars and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Digital GaN-based transceiver module for future green 5G networks}, series = {2024 54th European Microwave Conference (EuMC)}, journal = {2024 54th European Microwave Conference (EuMC)}, publisher = {IEEE}, doi = {10.23919/EuMC61614.2024.10732423}, pages = {136 -- 139}, language = {en} } @misc{ManchandaAndreiTostetal., author = {Manchanda, Prabhav and Andrei, Cristina and Tost, Frank and Rudolph, Matthias}, title = {A pHEMT based power detector for radar applications}, series = {2024 54th European Microwave Conference (EuMC)}, journal = {2024 54th European Microwave Conference (EuMC)}, publisher = {IEEE}, doi = {10.23919/EuMC61614.2024.10732043}, pages = {992 -- 995}, language = {en} } @misc{HaqueAndreiWolfetal., author = {Haque, Sanaul and Andrei, Cristina and Wolf, Mihaela and Hilt, Oliver and Rudolph, Matthias}, title = {Switch integrated Ka-Band low noise amplifier in GaN/AlN HEMT technology}, series = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, publisher = {IEEE}, doi = {10.23919/EuMIC61603.2024.10732731}, pages = {351 -- 354}, language = {en} } @misc{ZervosBeleniotisRudolph, author = {Zervos, Christos and Beleniotis, Petros and Rudolph, Matthias}, title = {A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs}, series = {Semiconductor Science and Technology}, volume = {39}, journal = {Semiconductor Science and Technology}, number = {9}, publisher = {IOP Publishing}, issn = {0268-1242}, doi = {10.1088/1361-6641/ad689c}, pages = {1 -- 8}, abstract = {Abstract This study provides an insight into the impact of thin purely undoped GaN channel thickness (t ch) on surface-related trapping effects in AlGaN/GaN high electron mobility transistors. Our TCAD study suggests that in cases where parasitic gate leakage is the driving trapping mechanism that promotes the injection of electrons from the Schottky gate contact into surface states, this effect can be alleviated by reducing t ch of the undoped GaN channel. We show that by decreasing t ch from 130 to 10 nm, devices exhibit a reduction in gate-related current collapse under the specific class-B RF operating bias conditions as a consequence of a substantial decrease in the off-state gate leakage with reducing t ch. Large-signal simulations revealed an increase by 3 W mm-1 and about 12\% output power and power-added efficiency due to the decrease of gate-related collapse. This work, for the first time, highlights the role of a proper purely undoped GaN t ch selection to alleviate gate-related surface trapping in the design of GaN-based microwave power amplifiers.}, language = {en} } @misc{BeleniotisKrauseZervosetal., author = {Beleniotis, Petros and Krause, Sascha and Zervos, Christos and Rudolph, Matthias}, title = {A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs}, series = {IEEE Transactions on Electron Devices}, volume = {71}, journal = {IEEE Transactions on Electron Devices}, number = {7}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3397234}, pages = {4058 -- 4065}, language = {en} } @misc{BeleniotisZervosKrauseetal., author = {Beleniotis, Petros and Zervos, Christos and Krause, Sascha and Chevtchenko, Serguei and Ritter, Dan and Rudolph, Matthias}, title = {Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD-compact model approach}, series = {IEEE Transactions on Electron Devices}, volume = {71 (2024)}, journal = {IEEE Transactions on Electron Devices}, number = {6}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3388386}, pages = {3582 -- 3589}, language = {en} } @misc{YazdaniZervosBeleniotisetal., author = {Yazdani, Hossein and Zervos, Christos and Beleniotis, Petros and Brusaterra, Enrico and Hilt, Oliver and Rudolph, Matthias and W{\"u}rfl, Joachim}, title = {Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps-Induced Drain Lag}, series = {Physica Status Solidi (a)}, journal = {Physica Status Solidi (a)}, publisher = {Wiley}, issn = {1862-6300}, doi = {10.1002/pssa.202300885}, pages = {1 -- 8}, abstract = {Drain lag is a well-known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high-electron-mobility transistors. Herein, it is demonstrated that a reduction of the gate-to-drain distance (Lgd) from 2.0 to 0.5 μm results in 7\% reduction in the current collapse. This improvement is attributed to a decrease in surface trapping, which, in this case, is found to have a greater impact on current collapse than relatively slow traps in the buffer layer. To support this argument, TCAD simulations are conducted. Load-pull analysis confirms that scaling the devices to Lgd = 0.5 μm provides 15\% better output power density at 10 GHz than Lgd = 2.0 μm. Additionally, a new passivation layer for reduced surface traps exhibits a 20 to 30\% higher output power density and at least a 10\% improvement in power-added efficiency at 20 GHz on a nominally identical GaN-on-semi-insulating SiC epi-wafer.}, language = {en} } @misc{RudolphBeleniotisZervosetal., author = {Rudolph, Matthias and Beleniotis, Petros and Zervos, Christos and Rohde, Ulrich L. and Andrei, Cristina}, title = {Determining GaN HEMT trap models from MHz load-line measurement : a case study}, series = {2024 15th German Microwave Conference (GeMiC)}, journal = {2024 15th German Microwave Conference (GeMiC)}, publisher = {IEEE}, doi = {10.23919/GeMiC59120.2024.10485297}, pages = {29 -- 32}, language = {en} } @misc{KauleLuoChevtchenkoetal., author = {Kaule, Evelyne and Luo, Peng and Chevtchenko, Serguei A. and Andrei, Cristina and Rudolph, Matthias}, title = {Analysis for the optimization of a rugged GaN low-noise amplifier MMIC with a compact stacked first amplifier stage}, series = {2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems (COMCAS)}, journal = {2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems (COMCAS)}, publisher = {IEEE}, doi = {10.1109/COMCAS58210.2024.10666226}, pages = {1 -- 4}, language = {en} } @misc{HaqueBeleniotisYazdanietal., author = {Haque, Sanaul and Beleniotis, Petros and Yazdani, Hossein and Rudolph, Matthias}, title = {Ka-Band GaN power amplifier with integrated DC supply switch and RF switch}, series = {2024 25th International Microwave and Radar Conference (MIKON)}, journal = {2024 25th International Microwave and Radar Conference (MIKON)}, publisher = {IEEE}, doi = {10.23919/MIKON60251.2024.10633971}, pages = {1 -- 5}, language = {en} } @incollection{NaumannRudolph, author = {Naumann, Matthias and Rudolph, David}, title = {L{\"a}ndliche Utopien als infrastrukturelle Utopien : Progressive Alternativen zu infrastruktureller Peripherisierung und infrastrukturellem Populismus.}, series = {L{\"a}ndliche Utopien : Herausforderungen und Alternativen regionaler Entwicklungen.}, booktitle = {L{\"a}ndliche Utopien : Herausforderungen und Alternativen regionaler Entwicklungen.}, publisher = {Transcript Verlag}, address = {Bielefeld}, isbn = {978-3-8394-7233-0}, doi = {10.1515/9783839472330}, pages = {115 -- 126}, language = {de} } @misc{KauleYazdaniRudolph, author = {Kaule, Evelyne and Yazdani, Hossein and Rudolph, Matthias}, title = {Highly Linear Concurrent Tri-Band GaN LNA MMIC for 0.8/1.8/3.6 GHz Applications}, series = {24th International Microwave and Radar Conference (MIKON)}, journal = {24th International Microwave and Radar Conference (MIKON)}, isbn = {978-83-956020-3-0}, doi = {10.23919/Mikon54314.2022.9924770}, pages = {3}, language = {en} } @misc{ManchandaOkochaRudolph, author = {Manchanda, Prabhav and Okocha, Jonathan and Rudolph, Matthias}, title = {Improved Sensitivity of Zero Bias Diode Power Detectors using Impedance Tuners}, series = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)}, journal = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)}, isbn = {978-1-6654-5203-8}, doi = {10.1109/MAPCON56011.2022.10047233}, pages = {1261 -- 1266}, language = {en} } @misc{RaoDoernerYazdanietal., author = {Rao, Megha Krishnaji and D{\"o}rner, Ralf and Yazdani, Hossein and Rudolph, Matthias}, title = {GaN-HEMT Based Common-Gate LNA MMIC with Integrated Switch for Compact 5G Transceivers}, series = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)}, journal = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)}, isbn = {978-1-6654-5203-8}, doi = {10.1109/MAPCON56011.2022.10047410}, pages = {1104 -- 1107}, language = {en} } @misc{SriperumbuduriWenzelRudolph, author = {Sriperumbuduri, Venkata Pawan and Wenzel, Andreas and Rudolph, Matthias}, title = {Mathematical Analysis of Switching HBT Devices}, series = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 12-16 December 2022, Bangalore, India}, journal = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 12-16 December 2022, Bangalore, India}, isbn = {978-1-6654-5203-8}, doi = {10.1109/MAPCON56011.2022.10047449}, pages = {827 -- 831}, language = {en} } @misc{BeleniotisSchniederChevtchenkoetal., author = {Beleniotis, Petros and Schnieder, Frank and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models}, series = {17th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {17th European Microwave Integrated Circuits Conference (EuMIC)}, isbn = {978-2-87487-070-5}, doi = {10.23919/EuMIC54520.2022.9923511}, pages = {149 -- 152}, language = {de} } @misc{HuynhLeLehmannetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Lehmann, Steffen and Zhao, Zhixing and Bossu, Germain and Arfaoui, Wafa and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation}, series = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, journal = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, isbn = {978-2-87487-073-6}, doi = {10.23919/EuMIC58042.2023.10288886}, pages = {173 -- 176}, language = {en} } @misc{ZervosBeleniotisKrauseetal., author = {Zervos, Christos and Beleniotis, Petros and Krause, Sascha and Ritter, Dan and Rudolph, Matthias}, title = {The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs}, series = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, volume = {2023}, journal = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, isbn = {978-2-87487-073-6}, doi = {10.23919/EuMIC58042.2023.10289036}, pages = {297 -- 300}, language = {en} } @misc{SriperumbuduriYacoubWentzeletal., author = {Sriperumbuduri, Venkata Pawan and Yacoub, Hady and Wentzel, Andreas and Johansen, Tom K. and Rudolph, Matthias}, title = {Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifer Providing 2.3}, series = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, journal = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, doi = {10.23919/EuMIC58042.2023.10288688}, pages = {4}, language = {en} } @misc{HaqueAndreiYazdanietal., author = {Haque, Sanaul and Andrei, Cristina and Yazdani, Hossein and Rudolph, Matthias}, title = {On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier}, series = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, journal = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, isbn = {978-2-87487-073-6}, doi = {10.23919/EuMIC58042.2023.10288728}, pages = {4}, language = {de} } @misc{KauleLuoChevtchenkoetal., author = {Kaule, Evelyne and Luo, Peng and Chevtchenko, Serguei A. and Rudolph, Matthias and Andrei, Cristina}, title = {Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition}, series = {18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin}, journal = {18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin}, isbn = {978-2-87487-073-6}, doi = {10.23919/EuMIC58042.2023.10288650}, pages = {9 -- 12}, language = {en} } @misc{BeleniotisZervosSchniederetal., author = {Beleniotis, Petros and Zervos, Christos and Schnieder, Frank and Rudolph, Matthias}, title = {Dynamic RD Modeling by Exploiting Gate Current Dependency of Virtual Gate Effect}, series = {18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin}, journal = {18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin}, isbn = {978-2-87487-073-6}, doi = {10.23919/EuMIC58042.2023.10288955}, pages = {1 -- 4}, language = {en} } @misc{RaoDoernerChevtchenkoetal., author = {Rao, Megha Krishnaji and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Haque, Sanaul and Rudolph, Matthias}, title = {Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-Ende}, series = {IEEE Microwave and Wireless Technology Letters}, volume = {33}, journal = {IEEE Microwave and Wireless Technology Letters}, number = {10}, issn = {2771-9588}, doi = {10.1109/LMWT.2023.3306177}, pages = {1446 -- 1449}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and Schwan, Christoph T. and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {22-nm FDSOI CMOS Noise Modeling and Anlaysis in mm-Wave Frequency Range}, series = {23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 22 February 2023, Las Vegas, NV, USA}, journal = {23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 22 February 2023, Las Vegas, NV, USA}, isbn = {978-1-6654-9319-2}, issn = {2474-9761}, doi = {10.1109/SiRF56960.2023.10046210}, pages = {31 -- 33}, language = {en} } @incollection{Rudolph, author = {Rudolph, Matthias}, title = {Wave Propagation on Transmission Lines and Cables}, series = {Fundamentals of RF and Microwave Techniques and Technologies}, booktitle = {Fundamentals of RF and Microwave Techniques and Technologies}, editor = {Hartnagel, Hans L. and Quay, R{\"u}diger and Rohde, Ulrich L. and Rudolph, Matthias}, publisher = {Springer}, address = {Cham}, isbn = {978-3-030-94098-0}, doi = {10.1007/978-3-030-94100-0_2}, pages = {55 -- 142}, language = {en} } @incollection{Rudolph, author = {Rudolph, Matthias}, title = {Properties of Coaxial Cables and Transmission Lines, Directional Couplers and RF Filters}, series = {Fundamentals of RF and Microwave Techniques and Technologies}, booktitle = {Fundamentals of RF and Microwave Techniques and Technologies}, editor = {Hartnagel, Hans L. and Quay, R{\"u}diger and Rohde, Ulrich L. and Rudolph, Matthias}, publisher = {Springer}, address = {Cham}, isbn = {978-3-030-94098-0}, doi = {10.1007/978-3-030-94100-0_4}, pages = {197 -- 333}, language = {en} } @incollection{Rudolph, author = {Rudolph, Matthias}, title = {Interference and Noise}, series = {Fundamentals of RF and Microwave Techniques and Technologies}, booktitle = {Fundamentals of RF and Microwave Techniques and Technologies}, editor = {Hartnagel, Hans L. and Quay, R{\"u}diger and Rohde, Ulrich L. and Rudolph, Matthias}, publisher = {Springer}, address = {Cham}, isbn = {978-3-030-94098-0}, doi = {10.1007/978-3-030-94100-0_8}, pages = {747 -- 791}, language = {en} } @misc{YazdaniBeleniotisBrunneretal., author = {Yazdani, Hossein and Beleniotis, Petros and Brunner, Frank and Ostermay, Ina and W{\"u}rfl, Joachim and Rudolph, Matthias and Heinrich, Wolfgang and Hilt, Oliver}, title = {K/Ka-Band-GaN-High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance}, series = {Physica Status Solidi}, journal = {Physica Status Solidi}, doi = {10.1002/pssa.202400592}, pages = {8}, language = {en} } @misc{KaredSilaghiRudolphetal., author = {Kared, Trusha and Silaghi, Helga and Rudolph, Matthias and Silaghi, Andrei and Rohde, Ulrich L.}, title = {Design of a fixed IF down-conversion double-balanced mixer for UHF band applications}, series = {Sensors}, volume = {25}, journal = {Sensors}, number = {3}, publisher = {MDPI}, address = {Basel}, issn = {1424-8220}, doi = {10.3390/s25030608}, pages = {1 -- 29}, abstract = {This paper presents a new SiGe HBT-based high dynamic range double-balanced down-conversion differential mixer. Operating within the 0.5 GHz to 1.8 GHz range, the suggested mixer is appropriate for a variety of applications, such as cellular base stations, satellite communication (SATCOM), and military radar. The down-conversion mixer is made up of a single-ended to a differential-balanced radiofrequency (RF) stage, a dual feedback linearization for the RF stage, a local oscillator (LO) balun, LO mixing cores, and a fixed intermediate frequency (IF)-tuned circuit connected between two outputs to serve as a load at 145 MHz. Compared to earlier research in the literature, the measured SSB noise figure is approximately 7 dB ± 0.4 dB, and the measured conversion gain is approximately 12 dB ± 1 dB for a full band of operation. The mixer achieves a good return loss of over 8 dB for an RF and LO port in the desired band and a measured return loss of over 18 dB at 145 MHz and IF frequency. Furthermore, the design achieved an RF-to-IF isolation of greater than 35 dB, LO feedthrough, and an LO leakage isolation of better than 50 dB. Lastly, the measured third-order intercept point was found to be +4.7 dBm, and the 1 dB compression point was approximately -8 dBm. These results demonstrate good linearity performance.}, language = {en} } @misc{HaqueDoernerChevtchenkoetal., author = {Haque, Sanaul and Doerner, Ralf and Chevtchenko, Serguei and Rudolph, Matthias}, title = {Linearity enhancement of GaN LNA MMIC using RF-based approach of derivative superposition}, series = {2025 20th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {2025 20th European Microwave Integrated Circuits Conference (EuMIC)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-082-8}, doi = {10.23919/EuMIC65284.2025.11234643}, pages = {25 -- 28}, abstract = {This work presents a new methodology of implementing the derivative superposition (DS) technique based on third-order intermodulation current cancellation using harmonic-balance simulation. This approach is especially suitable for high-frequency applications due to the loading effect in transistors connected in parallel. To the best of the authors' knowledge, this work demonstrates for the first time the implementation of the DS technique in GaN-based LNA MMIC. As a proof of concept, two single-stage 4.5-5.5 GHz LNA MMICs, with and without DS technique, are designed using FBH 250 nm GaN on SiC process, with a focus on improving linearity without additional power consumption. A two-tone measurement around 5 GHz shows a 6 dB output third-order intercept point (OIP3) improvement, from 38.7 dBm for a conventional LNA to 44.9 dBm for an LNA with DS. This leads to an improvement in the linearity figure of merit (LFOM = OIP3/Pdc) from 6.6 to 28.}, language = {en} } @misc{BeleniotisAndreiZervosetal., author = {Beleniotis, Petros and Andrei, Cristina and Zervos, Christos and Rohde, Ulrich L. and Rudolph, Matthias}, title = {GaN trap model extraction based on MHz load-line measurements}, series = {2025 IEEE/MTT-S International Microwave Symposium - IMS 2025}, journal = {2025 IEEE/MTT-S International Microwave Symposium - IMS 2025}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {979-8-3315-1409-9}, doi = {10.1109/IMS40360.2025.11104000}, pages = {1059 -- 1062}, abstract = {The extraction of model parameters for GaN HEMTs is a challenging task that typically requires a comprehensive series of pulsed measurements to ensure that the resulting model is both accurate and convergence-stable. This study introduces, for the first time, an extraction procedure that utilizes I-V curves generated by MHz load-line measurements, effectively replacing the complex and time-intensive pulsed measurements. A drain-lag model extraction was based on load-line I-V curves and validated along with a pulsed-IV-based model through RF large-signal simulations, demonstrating excellent performance.}, language = {en} } @misc{BeleniotisAndreiRohdeetal., author = {Beleniotis, Petros and Andrei, Cristina and Rohde, Ulrich L. and Rudolph, Matthias}, title = {Determining GaN HEMT trap models from MHz load-line measurement — synthesis and evaluation}, series = {2025 16th German Microwave Conference (GeMiC)}, journal = {2025 16th German Microwave Conference (GeMiC)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9820397-4-9}, doi = {10.23919/GeMiC64734.2025.10978988}, pages = {451 -- 454}, abstract = {The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations are often hindered by high costs and the time-intensive nature of the measurement process. In this paper, we present and evaluate a novel approach for trap model extraction that utilizes MHz load-line measurements. Our analysis includes a comparative study of the measurements and a demonstration of modeling based on the proposed methodology.}, language = {en} } @misc{ManchandaKnaackTostetal., author = {Manchanda, Prabhav and Knaack, Marcus and Tost, Frank and Andrei, Cristina and Rudolph, Matthias}, title = {Digitally reconfigurable power detector}, series = {2025 16th German Microwave Conference (GeMiC)}, journal = {2025 16th German Microwave Conference (GeMiC)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9820397-4-9}, doi = {10.23919/GeMiC64734.2025.10979055}, pages = {439 -- 442}, abstract = {This paper presents a reconfigurable diode detector operating at 24 GHz, capable of dynamically adjusting its output voltage and linear range through digital control of the load impedance. The variation in load impedance is initially achieved by employing a variable resistor within the baseband amplifier. Subsequently, the same effect is accomplished using a fully digital solution by configuring the internal programmable gain amplifier (PGA) of an analog-to-digital converter (ADC). The detector, the baseband amplifier, and the ADC are fabricated using commercially available components. Experimental results demonstrate that the linear range can be extended significantly by reducing the input impedance of the baseband amplifier, whereas an increase in impedance results in an elevated output voltage. Similar trends are observed when utilizing the PGA within the ADC. The results demonstrate a reconfigurable diode detector that employs digital control to dynamically optimize performance metrics, including output voltage and linear range. This adaptability renders it highly versatile and well-suited for a broad spectrum of modern RF system applications.}, language = {en} } @misc{ManchandaKnaackLiaoetal., author = {Manchanda, Prabhav and Knaack, Marcus and Liao, Juhua and Andrei, Cristina and Rudolph, Matthias}, title = {Detection of vital signs using noncoherent receivers}, series = {2025 22nd European Radar Conference (EuRAD)}, journal = {2025 22nd European Radar Conference (EuRAD)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-083-5}, doi = {10.23919/EuRAD65285.2025.11233845}, pages = {363 -- 366}, abstract = {This work introduces a novel concept for detecting displacements, specifically vital signs resulting from physiological activity, using noncoherent receivers. A theoretical analysis of phase noise propagation in the receiver architecture reveals that individual uncorrelated phase noise contributions add at the intermediate frequency, thereby defining the detection sensitivity. System validation using a reflector mounted on a modulator producing controlled oscillations demonstrates the ability to detect sub-millimeter displacements, provided the residual phase noise from the uncorrelated oscillators remains low. Extending this concept, the system accurately detects respiration and cardiac activity, with results is comparable to those of a reference ECG sensor. These findings open new possibilities for multistatic vital sign detection systems, offering reliable, non-contact sensing for healthcare and remote monitoring applications.}, language = {en} } @misc{KrishnajiRaoWentzelHoffmannetal., author = {Krishnaji Rao, Megha and Wentzel, Andreas and Hoffmann, Thomas and Schellhase, Lars and A. Chevtchenko, Serguei and Yazdani, Hossein and Rudolph, Matthias}, title = {Digital GaN-based transceiver architectures for sustainable 5G networks}, series = {International journal of microwave and wireless technologies}, journal = {International journal of microwave and wireless technologies}, publisher = {Cambridge University Press (CUP)}, address = {Cambridge}, issn = {1759-0787}, doi = {10.1017/S1759078725102262}, pages = {1 -- 9}, abstract = {This paper presents two distinct configurations of a GaN-based digital transceiver (TRx) to evaluate their performance and integration efficiency. The first configuration, features a novel low-noise amplifier with integrated switching capability (LNAiS) and a digital class-E power amplifier (PA) on a single compact chip. The LNAiS eliminates the need for an external antenna switch, reducing module complexity and chip size while maintaining high performance. It achieves a gain of 12.7 dB and a noise figure of 3 dB at 4.7 GHz in Rx mode and provides over 20 dB isolation in Tx mode across 4.7-7.4 GHz. The digital PA demonstrates flexibility and efficiency, achieving 46\% and 23\% efficiencies for 20 MHz LTE and OFDM signals, respectively, and 22\% for a 240 MHz OFDM signal with 10 dB PAPR. The second configuration integrates the same concept of digital PA with a standard LNA and an SPDT switch (LNAsS), achieving a gain of 24.8 dB and a noise figure of 2.65 dB at 4.2 GHz. This work highlights the trade-offs between these two architectures and demonstrates that the LNAiS-based approach drives the development of greener, more flexible, compact,lower-complexity, and cost-effective transceivers for 5G networks.}, language = {en} } @misc{BeleniotisZervosKrauseetal., author = {Beleniotis, Petros and Zervos, Christos and Krause, Sascha and Yazdani, Hossein and Rudolph, Matthias}, title = {Traps in GaN HEMTs : from characterization to model development and device optimization}, series = {2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)}, journal = {2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {979-8-3315-9172-4}, doi = {10.1109/BCICTS63111.2025.11211504}, pages = {1 -- 8}, abstract = {This paper reviews a comprehensive strategy designed to address the impact of traps across the entire field of GaN HEMT operation. It begins with the characterization of trap levels and the measurement of trap time constants. The study then progresses to TCAD simulations to examine the location of the observed trap levels and their effect on device performance. Finally, it introduces the development of a compact trap model grounded in Shockley-Read-Hall statistics. The proposed model is capable of accurately predicting trapping effects across all combinations of voltage, temperature, and time. The paper concludes by highlighting the synergy TCAD-compact-model, underscoring its utility in device optimization schemes.}, language = {en} } @misc{RaoBeleniotisHoffmannetal., author = {Rao, Megha Krishnaji and Beleniotis, Petros and Hoffmann, Thomas and Yazdani, Hossein and Wentzel, Andreas and Rudolph, Matthias}, title = {Switch-integrated GaN LNAs : a technology-focused analysis}, series = {2025 20th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {2025 20th European Microwave Integrated Circuits Conference (EuMIC)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-082-8}, doi = {10.23919/EuMIC65284.2025.11234676}, pages = {29 -- 32}, abstract = {This paper presents the first circuit-level analysis of a two-stage GaN-HEMT LNA with an integrated switch, comparing two distinct technologies: one with a standard passivation layer (Type A) and another featuring an advanced passivation layer (Type B). Through a detailed evaluation of their performance in both amplification and isolation modes, the study highlights Type B as a significant advancement over Type A. Leveraging technological enhancements, including an improved passivation layer and slightly optimized component matching, Type B demonstrates superior performance. The results are compelling, with Type B achieving a gain of 19 dB, a low noise figure of 1.17dB, and small-signal isolation exceeding 30 dBm at 5.2 GHz. These achievements establish Type B as a formidable option for future 5G telecommunication systems, offering a performance that challenges traditional designs that use separate switches.}, language = {en} } @misc{OkochaAndreiRudolph, author = {Okocha, Jonathan and Andrei, Cristina and Rudolph, Matthias}, title = {On the repeatability of low cost varactor—based RF impedance tuners}, series = {2025 55th European Microwave Conference (EuMC)}, journal = {2025 55th European Microwave Conference (EuMC)}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-081-1}, doi = {10.23919/EuMC65286.2025.11234977}, pages = {683 -- 686}, abstract = {This paper introduces a concise methodology for assessing the repeatability of low-cost, varactor-based RF impedance tuners by employing a dB-based metric that quantifies how accurately each tuner reproduces a target impedance over repeated cycles. Both blocked and cyclical measurement strategies are used to highlight large impedance transitions near high-reflection states that exacerbate non-idealities. In addition, the method rigorously characterizes issues such as systematic offsets, drift, and hysteresis, common challenges that can impair tuner performance, allowing targeted improvements. Demonstrations with a BST varactor prototype underscore the importance of identifying and quantifying these effects to ensure consistent tuner performance in real-world RF testing environments.}, language = {en} } @incollection{GailingNaumannRudolph, author = {Gailing, Ludger and Naumann, Matthias and Rudolph, David}, title = {Local and regional conflicts in the energy transition}, series = {Reference module in materials science and materials engineering}, booktitle = {Reference module in materials science and materials engineering}, publisher = {Elsevier BV}, address = {Amsterdam}, isbn = {978-0-12-803581-8}, doi = {10.1016/B978-0-443-29210-1.00073-X}, pages = {1 -- 9}, abstract = {Energy transitions are accompanied by a range of conflicts, which mostly occur at local and regional scales. To help understand these, this chapter provides a typology of energy conflicts, of which the most common are distribution and procedural conflicts. Energy conflicts entail material, spatial, temporal and actor dimensions. For both major types of energy conflict and their different dimensions, the chapter provides empirical examples from Denmark and the United Kingdom. Energy conflicts are a challenge for energy transitions, but they are also drivers of social change, which are inherent in the pluralistic structure of modern societies.}, language = {en} }