@article{RudolphHeymann, author = {Rudolph, Matthias and Heymann, Peter}, title = {On Compact HBT RF Noise Modeling}, language = {en} } @article{Rudolph, author = {Rudolph, Matthias}, title = {Limitations of Current Compact Transit-Time Models for III-V-Based HBTs}, language = {en} } @misc{RudolphDewitzLieroetal., author = {Rudolph, Matthias and Dewitz, Mike and Liero, Armin and Khalil, I. and Chaturvedi, Nidhi and Wipf, Christian and Bertenburg, R. M. and Miller, J. and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Robust X-Band LNA with Extremely Short Recovery Time}, language = {en} } @inproceedings{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter}, title = {New Algorithm for Extraction of FET Noise Model Parameters}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {New GaInP/GaAs-HBT Large-Signal Model for Power Applications}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Richter, E.}, title = {Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {A Universal Measurement System for Microwave Power Transistors}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer}, language = {en} } @inproceedings{RudolphKurpasBrunneretal., author = {Rudolph, Matthias and Kurpas, Paul and Brunner, F. and Doser, W. and Maaßdorf, Andre and D{\"o}rner, Ralf and Blanck, H. and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions}, language = {en} } @inproceedings{RudolphSchniederHeinrichetal., author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang and Schnieder, Frank}, title = {Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs}, language = {en} } @article{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter}, title = {An HBT Noise Model Valid up to Transit Frequency}, language = {en} } @article{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter and Prinzler, H. and B{\"o}ck, Georg}, title = {Experimental Evaluation of Microwave Field-EffectTransistor Noise Models}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Harmonic Tuning of Power Transistors by Active Load-Pull Measurement}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Beilenhoff, K.}, title = {Scalable GaInP/GaAs HBT Large-Signal Model}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers}, language = {en} } @misc{RudolphWuerflKurpasetal., author = {Rudolph, Matthias and W{\"u}rfl, Joachim and Kurpas, Paul and Brunner, F. and Mai, M.}, title = {Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, R. and Klapproth, L. and B{\"o}ck, Georg}, title = {Direct Extraction of FET Noise Models from Noise Figure Measurements}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, R. and Beilenhoff, K.}, title = {Unified Model for Collector Charge in Heterojunction Bipolar Transistors}, language = {en} } @article{RudolphSheinmanWasigeetal., author = {Rudolph, Matthias and Sheinman, B. and Wasige, E. and D{\"o}rner, Ralf and Sidorov, V. and Cohen, S. and Ritter, Dan}, title = {A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit}, language = {en} } @article{Rudolph, author = {Rudolph, Matthias}, title = {Uniqueness Problems in Compact HBT Models Caused by Thermal Effects}, language = {en} } @inproceedings{RudolphHeymann, author = {Rudolph, Matthias and Heymann, Peter}, title = {The Influence of Microwave Two-Port Noise on Residual Phase Noise in GaAs-HBTs}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang and Meliani, Chafik}, title = {A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Key Issues of Compact Models for GaAs Heterojunction Bipolar Transistors}, language = {en} } @inproceedings{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs}, language = {en} } @article{RudolphBeilenhoffDoerneretal., author = {Rudolph, Matthias and Beilenhoff, K. and D{\"o}rner, Ralf and Heymann, Peter}, title = {Scalable GaInP/GaAs HBT Large-Signal Model}, language = {en} } @inproceedings{LenkDoernerRumiantsevetal., author = {Lenk, Friedrich and D{\"o}rner, Ralf and Rumiantsev, Andrej and Rudolph, Matthias}, title = {Calibration Residual Error Propagation Analysis Using Conformal Mapping}, series = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, booktitle = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {978-1-61284-959-1}, pages = {Paper 2-4}, language = {en} } @incollection{RudolphEngelmannSchmueckle, author = {Rudolph, Matthias and Engelmann, Jens and Schm{\"u}ckle, Franz-Josef}, title = {Large and packaged Transistors}, series = {Nonlinear Transistor Model Parameter Extraction Techniques}, booktitle = {Nonlinear Transistor Model Parameter Extraction Techniques}, editor = {Rudolph, Matthias and Root, David E. and Fager, Christian}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {171 -- 205}, language = {en} } @inproceedings{RudolphSchniederSchmueckleetal., author = {Rudolph, Matthias and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {An Analysis of Source Connections in GaN Power Transistor Packages}, series = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, booktitle = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, address = {Ilmenau}, isbn = {978-3-9812668-4-9}, pages = {4}, language = {en} } @incollection{Rudolph, author = {Rudolph, Matthias}, title = {Introduction}, series = {Nonlinear transistor model parameter extraction techniques}, booktitle = {Nonlinear transistor model parameter extraction techniques}, editor = {Rudolph, Matthias and Fager, Christian and Root, David E.}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {1 -- 17}, language = {en} } @book{RohdeRudolph, author = {Rohde, Ulrich L. and Rudolph, Matthias}, title = {RF/Microwave Circuit Design for Wireless Applications}, edition = {2. ed.}, publisher = {Wiley}, address = {Hoboken, NJ}, isbn = {978-0-470-90181-6}, pages = {XIX, 893}, language = {en} } @inproceedings{RudolphDoernerNgnintedemetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Ngnintedem, Eric and Heinrich, Wolfgang}, title = {Noise Modeling of GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2302-4}, pages = {159 -- 162}, language = {en} } @inproceedings{AndreiDoernerBengtssonetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Bengtsson, Olof and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Highly Linear X-Band GaN-Based Low-Noise Amplifier}, series = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, booktitle = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4454-8}, language = {en} } @misc{SchniederRudolph, author = {Schnieder, Frank and Rudolph, Matthias}, title = {Thermal Coupling in AlGaN/GaN Power Transistors}, series = {Frequenz}, volume = {67}, journal = {Frequenz}, number = {1-2}, issn = {2191-6349}, doi = {10.1515/freq-2012-0031}, pages = {21 -- 26}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications}, series = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, journal = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-032-3}, pages = {280 -- 283}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Towards a Large-Signal Noise Model for GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, pages = {484 -- 487}, language = {en} } @misc{SchniederBengtssonSchmueckleetal., author = {Schnieder, Frank and Bengtsson, Olof and Schm{\"u}ckle, Franz-Josef and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description}, series = {IEEE transactions on microwave theory and techniques}, volume = {61}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, doi = {10.1109/TMTT.2013.2261089}, pages = {2603 -- 2609}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices}, series = {GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany}, booktitle = {GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany}, publisher = {VDE-Verl.}, address = {Berlin [u.a.]}, isbn = {978-3-8007-3585-3}, pages = {4}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Small- and large-signal modeling of InP HBTs in transferred-substrate technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {6}, journal = {International Journal of Microwave and Wireless Technologies}, number = {3-4}, doi = {10.1017/S1759078714000051}, pages = {243 -- 251}, language = {en} } @inproceedings{KoloskaWolffRudolph, author = {Koloska, Uwe and Wolff, Matthias and Rudolph, Torsten}, title = {Ein Werkzeug zur automatischen Inventargenerierung}, series = {Elektronische Sprachsignalverarbeitung, Tagungsband der zehnten Konferenz, G{\"o}rlitz, 20. bis 22. September 1999}, booktitle = {Elektronische Sprachsignalverarbeitung, Tagungsband der zehnten Konferenz, G{\"o}rlitz, 20. bis 22. September 1999}, editor = {Mehnert, Dieter}, publisher = {w.e.b. Universit{\"a}tsverlag}, address = {Dresden}, isbn = {3-933592-64-X}, pages = {160 -- 165}, language = {de} } @inproceedings{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {GaN HEMT Noise Model Performance under Nonlinear Operation}, series = {Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC)}, booktitle = {Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC)}, publisher = {IEEE}, doi = {10.1109/EuMIC.2014.6997895}, pages = {472 -- 475}, language = {en} } @inproceedings{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {GaN HEMT Noise Model Performance under Nonlinear Operation}, series = {Proceedings, 44th European Microwave Conference}, booktitle = {Proceedings, 44th European Microwave Conference}, publisher = {IEEE}, isbn = {978-2-87487-035-4}, doi = {10.1109/EuMC.2014.6986711}, pages = {1416 -- 1419}, language = {en} } @misc{AptePoddarRudolphetal., author = {Apte, Anisha M. and Poddar, Ajay K. and Rudolph, Matthias and Rohde, Ulrich L.}, title = {A Novel Low Phase Noise X-Band Oscillator}, series = {IEEE Microwave Magazine}, volume = {16}, journal = {IEEE Microwave Magazine}, number = {1}, issn = {1527-3342}, doi = {10.1109/MMM.2014.2367957}, pages = {127 -- 135}, language = {en} } @misc{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {Modeling Nonlinear White Noise in GaN HEMT Devices}, series = {Frequenz}, volume = {69}, journal = {Frequenz}, number = {1-2}, pages = {47 -- 55}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive}, series = {Proceedings of 45th European Microwave Conference, Paris 2015}, booktitle = {Proceedings of 45th European Microwave Conference, Paris 2015}, publisher = {IEEE}, doi = {10.1109/EuMC.2015.7345742}, pages = {231 -- 234}, language = {en} } @misc{NosaevaWeimannRudolphetal., author = {Nosaeva, Ksenia and Weimann, Nils and Rudolph, Matthias and John, Wilfred and Kr{\"u}ger, Olaf and Heinrich, Wolfgang}, title = {Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer}, series = {Electronics Letters}, volume = {51}, journal = {Electronics Letters}, number = {13}, issn = {1350-911X}, doi = {10.1049/el.2015.1135}, pages = {1010 -- 1012}, language = {en} } @misc{NosaevaWeimannRudolphetal., author = {Nosaeva, Ksenia and Weimann, Nils and Rudolph, Matthias and John, Wilfred and Kr{\"u}ger, Olaf and Heinrich, Wolfgang}, title = {Thin ice: Diamond films could more than double the power output achievable with transistors in the 'Terahertz gap' by improving thermal management}, series = {Electronics Letters}, volume = {51}, journal = {Electronics Letters}, number = {13}, issn = {1350-911X}, doi = {10.1049/el.2015.1943}, pages = {S. 959}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications}, series = {IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015}, publisher = {IEEE}, doi = {10.1109/MWSYM.2015.7166766}, pages = {4}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany}, booktitle = {2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-7-0}, doi = {10.1109/GEMIC.2016.7461650}, pages = {441 -- 444}, language = {en} } @misc{NosaevaAlSawafJohnetal., author = {Nosaeva, Ksenia and Al-Sawaf, Thualfiqa and John, Wilfred and Stoppel, Dimitri and Rudolph, Matthias and Schm{\"u}ckle, Franz-Josef and Janke, Bernd and Kr{\"u}ger, Olaf and Krozer, Viktor and Heinrich, Wolfgang and Weimann, Nils}, title = {Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer}, series = {IEEE Transactions on Electron Devices}, volume = {63}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2016.2533669}, pages = {1846 -- 1852}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, booktitle = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-044-6}, doi = {10.1109/EuMIC.2016.7777514}, pages = {157 -- 160}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {GaN HEMTs for low-noise amplification — status and challenges}, series = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, booktitle = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-5862-4}, doi = {10.1109/INMMIC.2017.7927327}, pages = {4}, language = {en} } @misc{ApteRohdePoddaretal., author = {Apte, Anisha M. and Rohde, Ulrich L. and Poddar, Ajay K. and Rudolph, Matthias}, title = {Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator}, series = {IEEE Microwave Magazine}, volume = {18}, journal = {IEEE Microwave Magazine}, number = {4}, issn = {1527-3342}, doi = {10.1109/MMM.2017.2679998}, pages = {108 -- 123}, language = {en} } @inproceedings{RudolphAndreiDoerneretal., author = {Rudolph, Matthias and Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang}, title = {Noise in GaN HEMTs and Circuits}, series = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, booktitle = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-2760-6}, doi = {10.1109/ICNF.2017.7985978}, pages = {1 -- 4}, language = {en} } @inproceedings{BonaniRudolph, author = {Bonani, Fabrizio and Rudolph, Matthias}, title = {Simulating Noise in Nonlinear Circuits}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-6360-4}, doi = {10.1109/MWSYM.2017.8059085}, pages = {240 -- 243}, language = {en} } @inproceedings{AndreiDoernerChevtchenkoetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design}, series = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, booktitle = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-048-4}, doi = {10.23919/EuMIC.2017.8230705}, pages = {244 -- 247}, language = {en} } @inproceedings{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Noise modeling of transferred-substrate InP-DHBTs}, series = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, booktitle = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-3169-0}, doi = {10.1109/COMCAS.2017.8244768}, pages = {1 -- 4}, language = {en} } @inproceedings{NasserRitterRudolph, author = {Nasser, Caram and Ritter, Dan and Rudolph, Matthias}, title = {Bias dependence of the access resistance in GaN HEMTs}, series = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, booktitle = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-83-949421-1-3}, doi = {10.23919/MIKON.2018.8405197}, pages = {271 -- 273}, language = {en} } @inproceedings{LuoSchniederRudolph, author = {Luo, Peng and Schnieder, Frank and Rudolph, Matthias}, title = {Chalmers GaN HEMT charge model revisited}, series = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, booktitle = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-8-7}, doi = {10.23919/GEMIC.2018.8335055}, pages = {164 -- 167}, language = {en} } @inproceedings{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs}, series = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, booktitle = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-5067-7}, doi = {10.1109/MWSYM.2018.8439389}, pages = {728 -- 731}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {14th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {14th European Microwave Integrated Circuits Conference (EuMIC)}, address = {Paris, France}, isbn = {978-2-87487-056-9}, doi = {10.23919/EuMIC.2019.8909653}, pages = {240 -- 242}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {Proceedings of 49th European Microwave Conference (EuMC)}, journal = {Proceedings of 49th European Microwave Conference (EuMC)}, address = {Paris, France}, isbn = {978-2-87487-055-2}, doi = {10.23919/EuMC.2019.8910675}, pages = {794 -- 796}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected.}, language = {en} } @misc{NasserLuoSchniederetal., author = {Nasser, Caram and Luo, Peng and Schnieder, Frank and Rudolph, Matthias and Ritter, Dan}, title = {Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment}, series = {IEEE Transactions on Electron Devices}, volume = {66}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2019.2907484}, pages = {2146 -- 2150}, language = {en} } @misc{GriebelRudolphRohde, author = {Griebel, Wolfgang and Rudolph, Matthias and Rohde, Ulrich L.}, title = {Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon}, series = {IETE Journal of Research}, journal = {IETE Journal of Research}, issn = {0974-780X}, doi = {10.1080/03772063.2020.1847702}, pages = {1 -- 11}, language = {en} } @misc{AndreiRudolph, author = {Andrei, Cristina and Rudolph, Matthias}, title = {Properties of GaN LNAs for Front-End Applications}, series = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, journal = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology}, series = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, journal = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-7281-3517-5}, doi = {10.1109/APMC46564.2019.9038620}, pages = {222 -- 224}, language = {en} } @misc{ShivanKauleHossainetal., author = {Shivan, T. and Kaule, Evelyne and Hossain, M. and D{\"o}rner, Ralf and Johansen, Tom K. and Stoppel, Dimitri and Boppel, S. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias}, title = {Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {7}, issn = {1759-0795}, doi = {10.1017/S1759078719000515}, pages = {635 -- 644}, language = {en} } @misc{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Vadal{\`a}, Valeria and Raffo, Antonio and Heinrich, Wolfgang and Rudolph, Matthias}, title = {A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {2}, issn = {1759-0787}, doi = {10.1017/S1759078719000060}, pages = {121 -- 129}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, D. and Zhao, Zhixing and Lehmann, Steffen and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs}, series = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA}, journal = {2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA}, isbn = {978-1-7281-6809-8}, issn = {2375-0995}, doi = {10.1109/RFIC49505.2020.9218369}, pages = {131 -- 134}, language = {en} } @misc{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus}, isbn = {978-3-9820-3971-8}, issn = {2167-8022}, pages = {52 -- 55}, language = {en} } @misc{HuynhLeDuhanetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Duhan, Pardeep and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-3-9820-3971-8}, issn = {2167-8022}, pages = {244 -- 247}, language = {en} } @misc{ErkelenzSriperumbuduriFlisgenetal., author = {Erkelenz, Kevin and Sriperumbuduri, Venkata Pawan and Flisgen, Thomas and Rudolph, Matthias and Johansen, Tom K. and Heinrich, Wolfgang and Wentzel, Andreas}, title = {Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure}, series = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, journal = {2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany}, publisher = {IEEE}, isbn = {978-3-9820-3971-8}, pages = {268 -- 271}, language = {en} } @misc{KrauseBeleniotisBengtssonetal., author = {Krause, Sascha and Beleniotis, Petros and Bengtsson, Olof and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive}, series = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, journal = {2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA}, isbn = {978-1-6654-0307-8}, issn = {2576-7216}, doi = {10.1109/IMS19712.2021.9574839}, pages = {515 -- 518}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model}, series = {IEEE Transactions on Electron Devices}, volume = {68}, journal = {IEEE Transactions on Electron Devices}, number = {4}, issn = {1557-9646}, doi = {10.1109/TED.2021.3061318}, pages = {1446 -- 1453}, language = {en} } @book{VendelinPavioRohdeetal., author = {Vendelin, George D. and Pavio, Anthony M. and Rohde, Ulrich L. and Rudolph, Matthias}, title = {Microwave circuit design:using linear and nonlinear techniques}, edition = {Third edition}, publisher = {Wiley}, address = {Hoboken, N.J.}, isbn = {978-1-118-44975-2}, pages = {xix, 1174}, language = {en} } @misc{BeleniotisSchniederRudolph, author = {Beleniotis, Petros and Schnieder, Frank and Rudolph, Matthias}, title = {Simulating Drain Lag of GaN HEMTs with physics-based ASM Model}, series = {2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands}, journal = {2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands}, isbn = {978-2-87487-060-6}, pages = {165 -- 168}, language = {en} } @book{HeymannRudolph, author = {Heymann, Peter and Rudolph, Matthias}, title = {A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement}, publisher = {IEEE Press [u.a.]}, address = {Piscataway, NJ}, isbn = {978-1-119-85936-9}, pages = {xv, 496}, language = {en} } @misc{KrauseMichlerKoelpinetal., author = {Krause, Sascha and Michler, Fabian and K{\"o}lpin, Alexander and Rudolph, Matthias and Heinrich, Wolfgang}, title = {A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars}, series = {IEEE Microwave and Wireless Components Letters}, volume = {31}, journal = {IEEE Microwave and Wireless Components Letters}, number = {8}, issn = {1558-1764}, doi = {10.1109/LMWC.2021.3084338}, pages = {997 -- 1000}, language = {en} } @misc{RudolphApte, author = {Rudolph, Matthias and Apte, Anisha M.}, title = {Nonlinear Noise Modeling: Using Nonlinear Circuit Simulators to Simulate Noise in the Nonlinear Domain}, series = {IEEE Microwave Magazine}, volume = {22}, journal = {IEEE Microwave Magazine}, number = {7}, issn = {1557-9581}, doi = {10.1109/MMM.2021.3069538}, pages = {47 -- 64}, language = {en} } @misc{SriperumbuduriYacoubJohansenetal., author = {Sriperumbuduri, Venkata Pawan and Yacoub, Hady and Johansen, Tom K. and Wentzel, Andreas and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance}, series = {2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event}, journal = {2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-66540-307-8}, doi = {10.1109/IMS19712.2021.9575019}, pages = {355 -- 357}, language = {en} } @misc{ShresthaDoernerYacoubetal., author = {Shrestha, Amit and D{\"o}rner, Ralf and Yacoub, Hady and Johansen, Tom K. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias and Wentzel, Andreas}, title = {A 100 GHz Class-F-Like InP-DHBT PA with 25,4\%PAE}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783638}, pages = {225 -- 228}, language = {en} } @misc{LeHuynhLehmannetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, publisher = {IEEE}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783713}, pages = {22 -- 25}, language = {en} } @misc{KauleAndreiRudolph, author = {Kaule, Evelyne and Andrei, Cristina and Rudolph, Matthias}, title = {Output Power Limited Rugged GaN LNA MMIC}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EUMIC50153.2022.9784020}, pages = {133 -- 135}, language = {en} } @misc{HuynhLeLehmannetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Lehmann, Steffen and Zhao, Zhixing and Bossu, Germain and Arfaoui, Wafa and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783930}, pages = {382 -- 385}, language = {en} } @misc{HaqueSchniederHiltetal., author = {Haque, Sanaul and Schnieder, Frank and Hilt, Oliver and D{\"o}rner, Ralf and Brunner, Frank and Rudolph, Matthias}, title = {Noise Medeling of GaN/AIN HEMT}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783992}, pages = {185 -- 188}, language = {en} } @misc{BeleniotisChevtchenkoRudolph, author = {Beleniotis, Petros and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9783780}, pages = {63 -- 66}, language = {en} } @misc{LeHuynhNayaketal., author = {Le, Quang Huy and Huynh, Dang Khoa and Nayak, Anurag and Lehmann, Steffen and Zhao, Zhixing and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology}, series = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK}, journal = {16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK}, isbn = {978-2-87487-064-4}, doi = {10.23919/EuMIC50153.2022.9784055}, pages = {17 -- 20}, language = {en} } @misc{TomazGerlichRudolphetal., author = {Tomaz, Antonio and Gerlich, Stefan and Rudolph, Matthias and Andrei, Cristina}, title = {A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers}, series = {2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022}, journal = {2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022}, publisher = {IEEE}, isbn = {978-3-9820397-2-5}, issn = {2167-8022}, pages = {65 -- 68}, abstract = {A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup.}, language = {en} } @misc{KrauseZervosBeleniotisetal., author = {Krause, Sascha and Zervos, Christos and Beleniotis, Petros and Ritter, Dan and Rudolph, Matthias and Heinrich, Wolfgang}, title = {On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs}, series = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, journal = {IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA}, publisher = {IEEE}, address = {Piscataway}, isbn = {978-1-6654-9613-1}, doi = {10.1109/IMS37962.2022.9865474}, pages = {914 -- 917}, language = {en} } @misc{BeleniotisSchniederKrauseetal., author = {Beleniotis, Petros and Schnieder, Frank and Krause, Sascha and Haque, Sanaul and Rudolph, Matthias}, title = {An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT}, series = {International Journal of Microwave and Wireless Technologie}, volume = {14}, journal = {International Journal of Microwave and Wireless Technologie}, number = {2}, issn = {1759-0795}, doi = {10.1017/S1759078721001483}, pages = {134 -- 142}, language = {en} } @misc{ZervosBeleniotisRudolph, author = {Zervos, Christos and Beleniotis, Petros and Rudolph, Matthias}, title = {Prediction of the large-signal GaN HEMT performance using accurate TCAD-compact modeling method}, series = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, publisher = {IEEE}, doi = {10.23919/EuMIC61603.2024.10732230}, pages = {186 -- 189}, language = {en} } @misc{RaoWentzelHoffmannetal., author = {Rao, Megha Krishnaji and Wentzel, Andreas and Hoffmann, Thomas and Schellhase, Lars and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Digital GaN-based transceiver module for future green 5G networks}, series = {2024 54th European Microwave Conference (EuMC)}, journal = {2024 54th European Microwave Conference (EuMC)}, publisher = {IEEE}, doi = {10.23919/EuMC61614.2024.10732423}, pages = {136 -- 139}, language = {en} } @misc{ManchandaAndreiTostetal., author = {Manchanda, Prabhav and Andrei, Cristina and Tost, Frank and Rudolph, Matthias}, title = {A pHEMT based power detector for radar applications}, series = {2024 54th European Microwave Conference (EuMC)}, journal = {2024 54th European Microwave Conference (EuMC)}, publisher = {IEEE}, doi = {10.23919/EuMC61614.2024.10732043}, pages = {992 -- 995}, language = {en} } @misc{HaqueAndreiWolfetal., author = {Haque, Sanaul and Andrei, Cristina and Wolf, Mihaela and Hilt, Oliver and Rudolph, Matthias}, title = {Switch integrated Ka-Band low noise amplifier in GaN/AlN HEMT technology}, series = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {2024 19th European Microwave Integrated Circuits Conference (EuMIC)}, publisher = {IEEE}, doi = {10.23919/EuMIC61603.2024.10732731}, pages = {351 -- 354}, language = {en} } @misc{ZervosBeleniotisRudolph, author = {Zervos, Christos and Beleniotis, Petros and Rudolph, Matthias}, title = {A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs}, series = {Semiconductor Science and Technology}, volume = {39}, journal = {Semiconductor Science and Technology}, number = {9}, publisher = {IOP Publishing}, issn = {0268-1242}, doi = {10.1088/1361-6641/ad689c}, pages = {1 -- 8}, abstract = {Abstract This study provides an insight into the impact of thin purely undoped GaN channel thickness (t ch) on surface-related trapping effects in AlGaN/GaN high electron mobility transistors. Our TCAD study suggests that in cases where parasitic gate leakage is the driving trapping mechanism that promotes the injection of electrons from the Schottky gate contact into surface states, this effect can be alleviated by reducing t ch of the undoped GaN channel. We show that by decreasing t ch from 130 to 10 nm, devices exhibit a reduction in gate-related current collapse under the specific class-B RF operating bias conditions as a consequence of a substantial decrease in the off-state gate leakage with reducing t ch. Large-signal simulations revealed an increase by 3 W mm-1 and about 12\% output power and power-added efficiency due to the decrease of gate-related collapse. This work, for the first time, highlights the role of a proper purely undoped GaN t ch selection to alleviate gate-related surface trapping in the design of GaN-based microwave power amplifiers.}, language = {en} } @misc{BeleniotisKrauseZervosetal., author = {Beleniotis, Petros and Krause, Sascha and Zervos, Christos and Rudolph, Matthias}, title = {A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs}, series = {IEEE Transactions on Electron Devices}, volume = {71}, journal = {IEEE Transactions on Electron Devices}, number = {7}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3397234}, pages = {4058 -- 4065}, language = {en} } @misc{BeleniotisZervosKrauseetal., author = {Beleniotis, Petros and Zervos, Christos and Krause, Sascha and Chevtchenko, Serguei and Ritter, Dan and Rudolph, Matthias}, title = {Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD-compact model approach}, series = {IEEE Transactions on Electron Devices}, volume = {71 (2024)}, journal = {IEEE Transactions on Electron Devices}, number = {6}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3388386}, pages = {3582 -- 3589}, language = {en} } @misc{YazdaniZervosBeleniotisetal., author = {Yazdani, Hossein and Zervos, Christos and Beleniotis, Petros and Brusaterra, Enrico and Hilt, Oliver and Rudolph, Matthias and W{\"u}rfl, Joachim}, title = {Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps-Induced Drain Lag}, series = {Physica Status Solidi (a)}, journal = {Physica Status Solidi (a)}, publisher = {Wiley}, issn = {1862-6300}, doi = {10.1002/pssa.202300885}, pages = {1 -- 8}, abstract = {Drain lag is a well-known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high-electron-mobility transistors. Herein, it is demonstrated that a reduction of the gate-to-drain distance (Lgd) from 2.0 to 0.5 μm results in 7\% reduction in the current collapse. This improvement is attributed to a decrease in surface trapping, which, in this case, is found to have a greater impact on current collapse than relatively slow traps in the buffer layer. To support this argument, TCAD simulations are conducted. Load-pull analysis confirms that scaling the devices to Lgd = 0.5 μm provides 15\% better output power density at 10 GHz than Lgd = 2.0 μm. Additionally, a new passivation layer for reduced surface traps exhibits a 20 to 30\% higher output power density and at least a 10\% improvement in power-added efficiency at 20 GHz on a nominally identical GaN-on-semi-insulating SiC epi-wafer.}, language = {en} } @misc{RudolphBeleniotisZervosetal., author = {Rudolph, Matthias and Beleniotis, Petros and Zervos, Christos and Rohde, Ulrich L. and Andrei, Cristina}, title = {Determining GaN HEMT trap models from MHz load-line measurement : a case study}, series = {2024 15th German Microwave Conference (GeMiC)}, journal = {2024 15th German Microwave Conference (GeMiC)}, publisher = {IEEE}, doi = {10.23919/GeMiC59120.2024.10485297}, pages = {29 -- 32}, language = {en} }