@article{RudolphMelianiDoerneretal., author = {Rudolph, Matthias and Meliani, Chafik and D{\"o}rner, Ralf and Heinrich, Wolfgang}, title = {Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio}, language = {en} } @article{RudolphTischlerKilketal., author = {Rudolph, Matthias and Tischler, Th. and Kilk, A. and Heinrich, Wolfgang}, title = {Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules}, language = {en} } @article{RudolphRheinfelderBeisswangeretal., author = {Rudolph, Matthias and Rheinfelder, C. N. and Beißwanger, F. and Heinrich, Wolfgang}, title = {Nonlinear Modeling of SiGe HBTs up to 50 GHz}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator}, language = {en} } @article{RudolphSchniederHeinrich, author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang}, title = {Modeling Emitter Breakdown in GaAs-Based HBTs}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Large-Signal Modeling of High-Voltage GaAs Power HBTs}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {On the Gunn Effect in GaAs HBTs}, language = {en} } @article{RudolphSheinmanWasigeetal., author = {Rudolph, Matthias and Sheinman, B. and Wasige, E. and D{\"o}rner, Ralf and Sidorov, V. and Cohen, S. and Ritter, Dan}, title = {A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit}, language = {en} } @article{RudolphBehtashDoerneretal., author = {Rudolph, Matthias and Behtash, Reza and D{\"o}rner, Ralf and Hirche, Klaus and Wurfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Analysis of the Survivability of GaN Low-Noise Amplifiers}, language = {en} }