@misc{HansenFuckeCharvinetal., author = {Hansen, Felix and Fucke, Rico and Charvin, Titouan and Froeschke, Samuel and Wolf, Daniel and Giraud, Romain and Dufouleur, Joseph and Gr{\"a}ßler, Nico and B{\"u}chner, Bernd and Schmidt, Peer and Hampel, Silke}, title = {Direct Deposition of (BixSb1-x)2Te3 Nanosheets on Si/SiO2 Substrates by Chemical Vapor Transport}, series = {Crystal growth \& design}, volume = {22}, journal = {Crystal growth \& design}, number = {4}, issn = {1528-7505}, doi = {10.1021/acs.cgd.1c01446}, pages = {2354 -- 2363}, abstract = {The tellurides of bismuth and antimony (Bi2Te3 and Sb2Te3) are prominent members of the V2VI3 material family that exhibit promising topological properties. We provide a method for the rational synthesis of mixed crystals of these materials ((BixSb1-x)2Te3 with x = 0.1, ..., 0.9) by means of a bottom-up chemical vapor transport (CVT) approach. Thermodynamic calculations showed the synthesis to be possible in the temperature range of 390-560 °C without significant enrichment of either component and without adding a transport agent. The starting materials were synthesized and verified by X-ray diffraction (XRD). Optimization experiments showed the ideal conditions for nanosheet synthesis to be T2 = 560 °C, T1 = 390 °C with a reaction time of t = 36 h. Crystals with heights of down to 12 nm (12 quintuple layers) were synthesized and analyzed by means of scanning electron microscopy, energy-dispersive X-ray spectrometry, and atomic force microscopy. High-resolution transmission electron microscopy confirmed the R3̅m crystal structure, high crystallinity, and overall quality of the synthesized (BixSb1-x)2Te3 nanosheets. Magnetotransport measurements revealed that such ternary compounds can have a significantly reduced carrier density compared to the binary parent compounds.}, language = {en} }