@misc{SetaelaeBirkhoferBradyetal., author = {Set{\"a}l{\"a}, Heikki and Birkhofer, Klaus and Brady, Mark Vincent and Byrne, Loren B. and Vries, Franciska T. de and Gardi, Ciro and Hotes, Stefan and Hedlund, Katarina and Liiri, Mira and Mortimer, Simon R. and Pavao-Zuckerman, Mitchell and Pouyat, Richard and Tsiafouli, Maria and Hemerik, Lia and Bardgett, Richard D. and Ruiter, Peter C. de and Putten, Wim H. van der}, title = {Urban and agricultural soils: conflicts and trade-offs in the optimization of ecosystem services}, series = {Urban Ecosystems}, volume = {17}, journal = {Urban Ecosystems}, number = {1}, issn = {1083-8155}, doi = {10.1007/s11252-013-0311-6}, pages = {239 -- 253}, language = {en} } @misc{DorpNynsCuypersetal., author = {Dorp, Dennis H. von and Nyns, Laura and Cuypers, Daniel and Ivanov, Tsvetan and Brizzi, Simone and Tallarida, Massimo and Fleischmann, Claudia and H{\"o}nicke, Philipp and M{\"u}ller, Matthias and Richard, Olivier and Schmeißer, Dieter and De Gendt, Stefan and Lin, Dennis H. C. and Adelmann, Christoph}, title = {Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation}, series = {ACS Applied Electronic Materials}, volume = {1}, journal = {ACS Applied Electronic Materials}, number = {11}, issn = {2637-6113}, doi = {10.1021/acsaelm.9b00388}, pages = {2190 -- 2201}, abstract = {The passivation of n-type InP (100) using sulfur in combination with a gadolinium aluminate (GAO) dielectric layer has been studied. Photoluminescence, minority-carrier lifetime, and capacitance-voltage measurements indicate that a (NH4)2S vapor passivation step prior to atomic layer deposition of the oxide effectively lowers the interface state density. Surface and interface chemistry were studied by synchrotron radiation photoemission spectroscopy (SRPES). The effect of ex situ surface passivation after native oxide removal in HCl solution was examined. It was observed that surface reoxidation occurred during (NH4)2S vapor exposure, leading to the formation of Inx(HPO4)y. S was present on the surface as a sulfide in both surface and subsurface sites. After atomic layer deposition of GAO, sulfates were detected in addition to Inx(HPO4)y, which was confirmed by near-edge X-ray absorptionfine structure analysis. The S in the stack was quantified using reference-free grazing incidence X-rayfluorescence analysis. X-ray absorption spectroscopy showed that Gd was oxidized and present in the 3+ oxidation state, most likely as a phosphate close to the InP interface and possibly mixed with sulfates. Energy-dependent SRPES measurements of Al 2p and Gd 4d core levels, complemented by transmission electron microscopy, further suggest that the dielectric layer was segregated. Valence band measurements confirm the effective passivation of InP, indicating unpinning of the surface Fermi level.}, language = {en} } @misc{TsiafouliThebaultSgardelisetal., author = {Tsiafouli, Maria and Th{\´e}bault, Elisa and Sgardelis, Stefanos P. and Ruiter, Peter C. de and Putten, Wim H. van der and Birkhofer, Klaus and Hemerik, Lia and Vries, Franciska T. de and Bardgett, Richard D. and Brady, Mark Vincent and Bjornlund, Lisa and Bracht J{\o}rgensen, Helene and Christensen, S{\"o}ren and D'Hertefeldt, Tina and Hotes, Stefan and Hol, W. H. Gera and Frouz, Jan and Liiri, Mira and Mortimer, Simon R. and Set{\"a}l{\"a}, Heikki and Tzanopoulous, Joseph and Uteseny, Karoline and Pižl, V{\´a}clav and Stary, Josef and Wolters, Volkmar and Hedlund, Katarina}, title = {Intensive agriculture reduces soil biodiversity across Europe}, series = {Global Change Biology}, volume = {21}, journal = {Global Change Biology}, number = {2}, issn = {1365-2486}, doi = {10.1111/gcb.12752}, pages = {973 -- 985}, language = {en} } @inproceedings{AugensteinLeopoldRichard, author = {Augenstein, Edgar and Leopold, F. and Richard, H.}, title = {Schlieren Techniques in Comparison The Background Oriented Method versus Visualization with Holographic Filters}, language = {en} } @inproceedings{HilsenbeckLenkLossyetal., author = {Hilsenbeck, Jochen and Lenk, Friedrich and Lossy, Richard and W{\"u}rfl, Joachim and Kohler, K. and Obloh, H.}, title = {DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line}, series = {IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000}, booktitle = {IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6258-6}, doi = {10.1109/ISCS.2000.947181}, pages = {351 -- 356}, abstract = {DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties}, language = {en} }