@misc{SchwartzReicheKittler, author = {Schwartz, Bernhard and Reiche, Manfred and Kittler, Martin}, title = {Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminiscence of Ge-based structures on Si substrate}, series = {Physica Status Solidi : C, Current Topics in Solid State Physics}, volume = {14}, journal = {Physica Status Solidi : C, Current Topics in Solid State Physics}, number = {7}, issn = {1610-1642}, pages = {1700018-1 -- 1700018-5}, language = {en} } @misc{KittlerReicheSchwartzetal., author = {Kittler, Martin and Reiche, Manfred and Schwartz, Bernhard and Uebensee, Hartmut and Kosina, Hans and Stanojevic, Zlatan and Baumgartner, Oskar and Ortlepp, Thomas}, title = {Transport of Charge Carriers along Dislocations in Si and Ge}, series = {Physica status solidi. A, Applications and materials science}, volume = {Volume 216}, journal = {Physica status solidi. A, Applications and materials science}, number = {17}, issn = {1862-6319}, doi = {10.10002/pssa.201900287}, pages = {7}, abstract = {Experimental observations and quantum mechanical device simulations point to different electronic properties of dislocations in silicon and germanium. The experimental data suggest a supermetallic behavior of the dislocations in Si and thus the high strain in the dislocation core is thought to cause the confinement of the charge carriers, which leads to the formation of a 1D electron gas along a dislocation (quantum wire). The resulting significant increase in the electron concentration corresponds to a marked increase in the drain current of metal-oxide-semiconductor field-effect transistor (MOSFET). The specific resistance of an individual dislocation in Ge is about nine orders of magnitude higher than for a dislocation in Si. The experimental measurements of the strain in dislocation cores in Ge are still missing. Based on the band structure data, the generation of a strain equivalent to that of the dislocation cores in Si appears to be very challenging because of the transition from an indirect into a direct semiconductor with about tenfold lower strain levels. The lower strain in the dislocation core in germanium may not support the carrier confinement as proposed for the dislocation core of silicon, and consequently 1D electron gases are not expected to form along the dislocations in Ge.}, language = {en} } @inproceedings{KittlerReicheMtchedlidzeetal., author = {Kittler, Martin and Reiche, Manfred and Mtchedlidze, T. and Arguirov, Tzanimir V. and Jia, Guobin and Seifert, Winfried and Suckow, Stephan and Thomas, Wilhelm}, title = {Stark effect at dislocations in silicon for modulation of a 1,5 um light emitter}, series = {Silicon photonics III, 21 - 24 January 2008, San Jose, California, USA}, booktitle = {Silicon photonics III, 21 - 24 January 2008, San Jose, California, USA}, publisher = {SPIE}, address = {Bellingham, Wash.}, isbn = {978-0-8194-7073-7}, language = {en} } @misc{YuArguirovKittleretal., author = {Yu, Xuegong and Arguirov, Tzanimir V. and Kittler, Martin and Seifert, Winfried and Ratzke, Markus and Reiche, Manfred}, title = {Properties of dislocation networks formed by Si wafer direct bonding}, series = {Materials Science in Semiconductor Processing}, volume = {9}, journal = {Materials Science in Semiconductor Processing}, number = {1-3}, doi = {10.1016/j.mssp.2006.01.070}, pages = {96 -- 101}, language = {en} } @article{KittlerSeifertYuetal., author = {Kittler, Martin and Seifert, Winfried and Yu, Xuegong and Jia, G. and Vyvenko, Oleg F. and Mtchedlidze, T. and Reiche, Manfred and Sha, J. and Yang, D. and Arguirov, Tzanimir V.}, title = {Silicon naostructures for IR light emitters}, series = {Materials Sience and Engineering C}, volume = {27}, journal = {Materials Sience and Engineering C}, number = {5-8}, issn = {1873-0191}, pages = {1252 -- 1259}, language = {en} } @inproceedings{KittlerArguirovSeifertetal., author = {Kittler, Martin and Arguirov, Tzanimir V. and Seifert, Winfried and Yu, Xuegong and Reiche, Manfred}, title = {Dislocation engineering for a Si-based light emitter at 1.5 μm}, series = {Technical digest, IEDM, IEEE International Electron Devices Meeting 2005, Washington, DC, December 5 - 7, 2005}, booktitle = {Technical digest, IEDM, IEEE International Electron Devices Meeting 2005, Washington, DC, December 5 - 7, 2005}, publisher = {IEEE Operations Center}, address = {Piscataway, NJ}, isbn = {0-7803-9268-X}, pages = {1005 -- 1008}, language = {en} } @misc{KittlerArguirovReiche, author = {Kittler, Martin and Arguirov, Tzanimir V. and Reiche, Manfred}, title = {Light-emitting semiconductor structure and optoelectronic component therefrom}, language = {de} } @misc{SchwartzReicheKittler, author = {Schwartz, Bernhard and Reiche, Manfred and Kittler, Martin}, title = {Temperature dependence of luminescence from dislocated Ge on Si substrate}, series = {Materials Today: Proceedings}, volume = {5}, journal = {Materials Today: Proceedings}, number = {3,1}, issn = {2214-7853}, doi = {10.1016/j.matpr.2018.03.061}, pages = {14712 -- 14721}, abstract = {For mono-crystalline Ge the indirect luminescence intensity declines upon growing temperature from 80 to 300 K, whereas for dislocated Ge structures the opposite behavior occurs. These findings are comparable to earlier observations on Si. The drop of the luminescence in dislocated material upon lowering temperature was attributed to the increase of the competing non-radiative recombination due to shallow dislocation states. In opposition to the indirect luminescence, the character of the direct Ge luminescence, i.e. incline of intensity upon growing temperature, is not converted by dislocations. The measured behavior of the direct peak position of Ge, in the temperature range between 80 and 300 K, is in accordance with calculated dependence and reflects the direct bandgap energy. The observed red shifts in dislocated Ge structures are shown to be produced by tensile strain, bandgap narrowing and by the Sn-content of GeSn quantum wells, respectively. A direct influence of dislocations could not be observed. Satisfying understanding of the existing temperature behavior of the indirect Ge peak position is on embryonic stage}, language = {en} } @misc{ReicheKittlerSchmelzetal., author = {Reiche, Manfred and Kittler, Martin and Schmelz, Matthias and Stolz, Ronny and Pippel, Eckhard and {\"U}bensee, Hartmut and Kermann, M. and Ortlepp, Thomas}, title = {Single-Electron Transitions In One-Dimensional Native Nanostructures}, series = {Journal of Physics: Conference Series}, volume = {568}, journal = {Journal of Physics: Conference Series}, issn = {1742-6588}, doi = {10.1088/1742-6596/568/5/052024}, pages = {052024}, language = {en} }