@misc{HansenWelsFroeschkeetal., author = {Hansen, Felix and Wels, Martin and Froeschke, Samuel and Popov, Alexey and Wolf, Daniel and B{\"u}chner, Bernd and Schmidt, Peer and Hampel, Silke}, title = {Thermodynamic Evaluation and Chemical Vapor Transport of Few-Layer WTe2}, series = {Crystal Growth and Design}, volume = {20}, journal = {Crystal Growth and Design}, number = {11}, issn = {1528-7505}, doi = {10.1021/acs.cgd.0c01004}, pages = {7341 -- 7349}, abstract = {Tungsten telluride WTe2 is the sole candidate of a group of two-dimensional layered transition metal dichalcogenides (TMDCs) MX2 with a thermodynamically stable 1T′-structure at room temperature. The binary system W/Te was audited with respect to a rational approach of planning and realization of a bottom-up synthesis of WTe2 nanostructures. Thus, the parameters of the synthesis via chemical vapor transports (CVT) were derived by thermodynamic simulations of the reaction pathway according to the Calphad method. Reflecting on the peritectic melting behavior at 1020 °C, the values of ΔfHm° (298 K) = -26.5 kJ·mol-1 and Sm° (298 K) = 132 J·mol-1 ·K-1 have been obtained. According to modeling, crystal growth by short time vapor transport is reasonable under the addition of bromine or TeBr4 in the temperature range between 650 and 750 °C. Experimental implementation of crystal growth of WTe2 nanosheets succeeded in a temperature gradient from 725 to 675 °C on yttria-stabilized zirconia (YSZ) (111) substrates, observing the deposition of single crystal sheets of high crystallinity with thicknesses of 15-20 nm (∼20-30 layers). The high crystallinity, pristine morphology, and overall quality of the deposited nanosheets is shown by means of atomic resolution transmission electron microscopy, selected area electron diffraction (SAED), and atomic force microscopy as well as profound double-polarized Raman spectroscopy.}, language = {en} } @misc{PutzeRitschelChekhoninetal., author = {Putze, Philipp and Ritschel, Tobias and Chekhonin, Paul and Geck, Jochen and Wolf, Daniel and Popov, Alexey and B{\"u}chner, Bernd and Schmidt, Peer and Hampel, Silke}, title = {Creating chirality in WSe₂ through screw dislocations by chemical vapor transport}, series = {Nanoscale horizons}, volume = {10}, journal = {Nanoscale horizons}, number = {5}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, doi = {10.1039/D4NH00567H}, pages = {944 -- 956}, abstract = {Screw dislocation-driven nanostructures of two-dimensional transition metal dichalcogenides (2D TMDs) can feature chirality that enables prominent asymmetric optical properties. One of the outstanding representatives is WSe₂ as it can exhibit intriguing new size and shape-dependent chemical and physical properties compared to its bulk counterpart. Crystal growth control in nanostructures with screw dislocation-driven growth is central for exploiting their structure-related properties. However, bottom-up syntheses of 2D TMDs usually contain 'trial and error' approaches. Here we report on the rational synthesis planning and realizing for the binary system W:Se to achieve chirality in nano-scale crystals by chemical vapor transport (CVT). For that purpose, key parameters were modelled based on thermodynamic datasets. Thus, crystal growth by CVT under addition of SeCl4 succeeds for right-handed spiral nanocrystals from 850 °C to 800 °C with a dwell time of 60 min, while left-handed spirals are obtained from 915 °C to 860 °C. Surface-fused SiO₂ nanoparticles on an Si(100) substrate served as potential nucleation points. Chirality of screwed WSe₂ was unprecedentedly investigated by circular-polarized Raman Spectroscopy and showed an intensity increase of the E¹₂g mode of 29\% and 15\% for right and left-handed spirals, respectively. Pyramid-like WSe2 analyzed by atomic force microscopy exhibits step heights of around 10 nm. Electron backscatter diffraction patterns reveal a convex curvature for WSe₂ with the curvature radii determined as Rx = (270 ± 32) μm and Ry = (141 ± 9) μm, respectively.}, language = {en} } @misc{PutzeWolfChekhoninetal., author = {Putze, Philipp and Wolf, Daniel and Chekhonin, Paul and Popov, Alexey and Ritschel, Tobias and Lubk, Axel and Geck, Jochen and B{\"u}chner, Bernd and Schmidt, Peer and Hampel, Silke}, title = {Twisted and screw dislocation-driven growth of MoSe₂ nanostructures by chemical vapor transport}, series = {Nano research}, journal = {Nano research}, number = {18}, publisher = {Tsinghua University Press}, issn = {1998-0000}, doi = {10.26599/NR.2025.94908020}, pages = {1 -- 23}, abstract = {Twisted multilayers of two-dimensional materials attract widespread research interest due to their intriguing electronic and optical properties related to their chiral symmetry breaking and Moir{\´e} effects. The two-dimensional transition metal dichalcogenide MoSe₂ is a particular promising material for twisted multilayers, capable of sustaining Moir{\´e} excitons. Here, we report on a rational bottom-up synthesis approach for twisted MoSe₂ flakes by chemical vapor transport (CVT). Screw dislocation-driven growth was forced by surface-fused SiO₂ nanoparticles on the substrates that serve as potential nucleation points in low supersaturation condition. Thus, crystal growth by in-situ CVT under addition of MoCl₅ leads to bulk 2H-MoSe₂ in a temperature gradient from 900 °C to 820 °C with a dwell time of 96 h. Hexagonally shaped 2H-MoSe₂ flakes were grown from 710 °C to 685 °C with a dwell time of 30 min on SiO₂@Al₂O₃(0001) substrates. Electron backscatter diffraction as well as electron microscopy reveals the screw dislocation-driven growth of triangular 3R-MoSe₂ with individual step heights between 0.9 nm and 2.9 nm on SiO₂@Si(100) under the same conditions. Finally, twisted MoSe₂ flakes exhibiting a twist angle of 19° with respect to the [010] zone axis could be synthesized.}, language = {en} }