@inproceedings{StamenkovićTittelbachHelmrichKrsticetal., author = {Stamenković, Zoran and Tittelbach-Helmrich, Klaus and Krstic, Milos and Perez, J. and Via, J. and Ib{\´a}{\~n}ez, Jes{\´u}s}, title = {Architecture of an Analog Combining MIMO System Compliant to IEEE 802.11a}, language = {en} } @article{MillanRodriguezPerezGarciaBestehornetal., author = {Mill{\´a}n-Rodriguez, J. and P{\´e}rez-Garc{\´i}a, C. and Bestehorn, Michael and Fantz, M. and Friedrich, R.}, title = {Pattern Formation in Convection of Rotating Fluids with Broken Vertical Symmetry}, language = {en} } @article{MillanRodriguezBestehornPerezGarciaetal., author = {Mill{\´a}n-Rodriguez, J. and Bestehorn, Michael and P{\´e}rez-Garc{\´i}a, C. and Friedrich, R. and Neufeld, M.}, title = {Defects Motion in Rotating Fluids}, language = {en} } @article{MillanRodriguezBestehornPerezGarciaetal., author = {Mill{\´a}n-Rodriguez, J. and Bestehorn, Michael and P{\´e}rez-Garc{\´i}a, C. and Neufeld, M. and Friedrich, R.}, title = {Motion of Defects in Rotating Fluids}, language = {en} } @misc{MaldonadoAcalOrtizetal., author = {Maldonado, D. and Acal, C. and Ortiz, H. and Aguilera, A.M. and Ruiz-Castro, J.E. and Cantudo, A. and Baroni, A. and Dorai Swamy Reddy, K. and Pechmann, S. and Uhlmann, M. and Wenger, Christian and P{\´e}rez, E. and Rold{\´a}n, J.B.}, title = {A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices}, series = {Materials science in semiconductor processing}, volume = {196}, journal = {Materials science in semiconductor processing}, publisher = {Elsevier BV}, address = {Amsterdam}, issn = {1369-8001}, doi = {10.1016/j.mssp.2025.109668}, pages = {1 -- 8}, abstract = {The conductance drift in HfO2-based memristors is a critical reliability concern that impacts in their application in non-volatile memory and neuromorphic computing integrated circuits. In this work we present a comprehensive statistical analysis of the conductance drift behavior in resistive random access memories (RRAM) whose physics is based on valence change mechanisms. We experimentally characterize the conductance time evolution in six different resistance states and analyze the suitability of various probability distributions to model the observed variability. Our results reveal that the log-logistic probability distribution provides the best fit to the experimental data for the resistance multilevels and the measured post-programming times under consideration. Additionally, we employ an analysis of variance (ANOVA) to statistically analyze the post-programming time and current level effects on the observed variability. Finally, in the context of the Stanford compact model, we describe how variability has to be implemented to obtain the probability distribution of measured current values.}, language = {en} } @misc{MoralesTschammerPożarowskaetal., author = {Morales, Carlos and Tschammer, Rudi and Pożarowska, Emilia and Kosto, Julia and Villar-Garcia, Ignacio J. and P{\´e}rez-Dieste, Virginia and Favaro, Marco and Starr, David E. and Kapuścik, Paulina and Mazur, Michał and Wojcieszak, Damian and Domaradzki, Jarosław and Alvarado, Carlos and Wenger, Christian and Henkel, Karsten and Flege, Jan Ingo}, title = {Hydrogen sensing via heterolytic H₂ activation at room temperature by atomic layer deposited ceria}, series = {ChemSusChem : chemistry, sustainability, energy, materials}, volume = {18}, journal = {ChemSusChem : chemistry, sustainability, energy, materials}, number = {13}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1864-5631}, doi = {10.1002/cssc.202402342}, pages = {1 -- 13}, abstract = {Ultrathin atomic layer deposited ceria films (\<20 nm) are capable of H2 heterolytic activation at room temperature, undergoing a significant reduction regardless of the absolute pressure, as measured under in-situ conditions by near ambient pressure X-ray photoelectron spectroscopy. ALD-ceria can gradually reduce as a function of H2 concentration under H2/O2 environments, especially for diluted mixtures below 10 \%. At room temperature, this reduction is limited to the surface region, where the hydroxylation of the ceria surface induces a charge transfer towards the ceria matrix, reducing Ce4+ cations to Ce3+. Thus, ALD-ceria replicates the expected sensing mechanism of metal oxides at low temperatures without using any noble metal decorating the oxide surface to enhance H2 dissociation. The intrinsic defects of the ALD deposit seem to play a crucial role since the post-annealing process capable of healing these defects leads to decreased film reactivity. The sensing behavior was successfully demonstrated in sensor test structures by resistance changes towards low concentrations of H2 at low operating temperatures without using noble metals. These promising results call for combining ALD-ceria with more conductive metal oxides, taking advantage of the charge transfer at the interface and thus modifying the depletion layer formed at the heterojunction.}, language = {en} } @misc{ChabbiRumpelGrootesetal., author = {Chabbi, Abad and Rumpel, C. and Grootes, Pieter M. and Gonzales-Perez, J. A. and Delaune, R. D. and Gonzales-Vila, F. and Nixdorf, Brigitte and H{\"u}ttl, Reinhard F.}, title = {Lignite degradation and mineralization in lignite-containing mine sediment as revealed by 14C activity measurements and molecular analysis}, series = {Organic Geochemistry}, volume = {37}, journal = {Organic Geochemistry}, number = {8}, issn = {0146-6380}, doi = {10.1016/j.orggeochem.2006.02.002}, pages = {957 -- 976}, language = {en} } @misc{MaldonadoReddyPechmannetal., author = {Maldonado, D. and Reddy, K. Dorai Swamy and Pechmann, S. and Hagelauer, A. and Wenger, Ch. and Rold{\´a}n, J.B. and P{\´e}rez, E.}, title = {Effects of the compliance current on the switching of HfO₂ and Al:HfO₂ memristive devices : characterization and modeling}, series = {2025 15th Spanish Conference on Electron Devices (CDE)}, journal = {2025 15th Spanish Conference on Electron Devices (CDE)}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, address = {Piscataway, NJ}, isbn = {979-8-3315-9618-7}, doi = {10.1109/CDE66381.2025.11038898}, pages = {1 -- 4}, abstract = {Memristive devices based on HfO2 and Al:HfO2 dielectrics have been fabricated and characterized to investigate their resistive switching (RS) behavior. The study focuses on employing different values of gate voltage (VG) to tune the compliance current (Icc) across multiple one-transistor-one-resistor (1T1R) devices. Advanced parameter extraction techniques were applied to determine key RS parameters, specifically the set voltage (Vset) and reset voltage (Vreset). Additionally, the cumulative distribution function (CDF) for both Vset and Vreset was calculated for all devices to analyze and compare the cycle-to-cycle (C2C) variability of the two technologies. Finally, the Stanford model was utilized to reproduce the experimental measurements, offering insights into the differences in the shapes of the I-V curves for the HfO2 and Al:HfO2-based devices.}, language = {en} }