@misc{DziallasFatemiKorndoerferetal., author = {Dziallas, Giannino and Fatemi, Adel and Kornd{\"o}rfer, Falk and Peczek, Anna and Kissinger, Dietmar and Zimmermann, Lars and Malignaggi, Andrea and Kahmen, Gerhard}, title = {A Monolithically Integrated Optical Bandpass Receiver in 0.25μm SiGe BiCMOS Technology for Microwave-Photonic Applications}, series = {2020 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 9-11, 2020 ONLINE}, journal = {2020 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 9-11, 2020 ONLINE}, isbn = {978-1-7281-8436-4}, doi = {10.1109/A-SSCC48613.2020.9336119}, pages = {4}, language = {en} } @misc{DziallasFatemiPeczeketal., author = {Dziallas, Giannino and Fatemi, Adel and Peczek, Anna and Zimmermann, Lars and Malignaggi, Andrea and Kahmen, Gerhard}, title = {A 56-Gb/s Optical Receiver with 2.08-µA Noise Monolithically Integrated into a 250-nm SiGe BiCMOS Technology}, series = {IEEE Transactions on Microwave Theory and Techniques}, volume = {70}, journal = {IEEE Transactions on Microwave Theory and Techniques}, number = {1}, issn = {0018-9480}, doi = {10.1109/TMTT.2021.3104838}, pages = {10}, language = {en} } @misc{MaiMarschmeyerPeczeketal., author = {Mai, Christian and Marschmeyer, Steffen and Peczek, Anna and Kroh, Aleksandra and Jose, Josmy and Reiter, Sebastian and Fischer, Inga Anita and Wenger, Christian and Mai, Andreas}, title = {Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology}, series = {ECS Transactions}, volume = {109}, journal = {ECS Transactions}, number = {4}, issn = {1938-5862}, doi = {10.1149/10904.0035ecst}, pages = {35 -- 46}, abstract = {In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 \% and RMS of 1.413 nm for 150 nm thick TiN layers.}, language = {en} }