@inproceedings{HoffmannSchmeisserEngelmannetal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Engelmann, Hans-J{\"u}rgen and Zschech, Ehrenfried and Stegmann, Heiko and Himpsel, Franz J. and Denlinger, Jonathan D.}, title = {Characterization of chemical bonding in low-k dielectric materials for interconnect isolation: A XAS and EELS Study}, series = {Materials, technology and reliability of low-k dielectrics and copper interconnects, symposium held April 18 - 21, 2006, San Francisco, California}, booktitle = {Materials, technology and reliability of low-k dielectrics and copper interconnects, symposium held April 18 - 21, 2006, San Francisco, California}, editor = {Tsui, Ting Y.}, publisher = {Materials Research Society}, address = {Warrendale, Pa.}, isbn = {978-1-55899-870-5}, pages = {55 -- 62}, language = {en} } @inproceedings{HoffmannSchmeisserHimpseletal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Himpsel, Franz J. and Engelmann, Hans-J{\"u}rgen and Zschech, Ehrenfried and Stegmann, Heiko and Denlinger, Jonathan D.}, title = {Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: XAS and EELS Study}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 156}, abstract = {The use of low dielectric constant materials in the on-chip interconnect process reduces interconnect delay, power dissipation and crosstalk noise. In CVD deposited organo-silicate glass (OSG) the substitution of oxygen in SiO2 by methyl groups (-CH3) reduces the permittivity significantly (from 4.0 in SiO2 to 2.6-3.3 in the OSG). However, plasma processing removes C and H containing molecular groups. Therefore, compositional analysis and chemical bonding characterization of structured films with nanometer resolution is necessary. OSG thin films as-deposited and after plasma treatment are studied using XAS and EELS. In both techniques, the fine structure near the C1s edge allows to identify C-H, C-C, and C-O bonds. XAS spectra have been recorded for non-patterned films and EELS spectra for patterned structures. The chemical bonding is compared for as-deposited and plasma-treated low-k materials. The flu-orescence and the electron yield recorded while XAS measurement are compared. Examination of the C 1s near-edge structures reveal a mod-ified bonding of the remaining C atoms in the plasma-treated sample regions.}, language = {en} } @incollection{SchmeisserHoffmannBeuckert, author = {Schmeißer, Dieter and Hoffmann, Patrick and Beuckert, Guido}, title = {Electronic Properties of the Interface Formed by Pr2o3 Growth on Si(001), Si(111)and SiC(0001) Surfaces}, editor = {Zschech, Ehrenfried and Whelan, Caroline}, language = {en} } @inproceedings{ZschechStegmannSchmeisseretal., author = {Zschech, Ehrenfried and Stegmann, Heiko and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Chemical Bonding, Permittivity, and Elastic Properties in Locally Modified Organosilicate Glass}, language = {en} }