@misc{HoffmannMikaloYfantisetal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Yfantis, Alexandros D. and Batchelor, David R. and Appel, G{\"u}nter and Schmeißer, Dieter}, title = {A Spectro-Microscopic Approach for Thin Film Analysis Grain Boundaries in mc-Si and Sn/SnO2 Nano Particles}, series = {Microchimica Acta}, volume = {136}, journal = {Microchimica Acta}, number = {3-4}, issn = {1436-5073}, pages = {109 -- 113}, language = {en} } @article{Hoffmann, author = {Hoffmann, Patrick}, title = {Photoemission studies of very thin (<10nm) silicon oxynitride (SiOxNy) layers formed by PECVD}, abstract = {The "ITRS Roadmap" suggests the necessity of working out the processing methods allowing formation of ultrathin dielectric layers with higher values of the dielectric permittivity than for silicon dioxide. The silicon oxynitride layers (SiOxNy) seem to be the most natural compromise. But still none of high temperature methods used for its formation can be seriously considered as final solution for future ULSI-CMOS ICs production due to the inevitable formation of nitride monolayers just at the silicon-insulator interface. The main scope of this investigation is to check if this is true.}, language = {en} } @article{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Si(001) surface oxidation by N2O}, abstract = {Ultra-thin homogeneous oxynitride films are prepared on Si(001). The Si surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N2Oat altered temperatures. Thus oxynitride layers of different thickness and different properties are grown depending on the N2O pressure and the Si temperature. This isillustrated by a schematic diagram. The properties of the different oxynitride layers were studied by a combined photoemission electron microscopy (PEEM) andphotoelectron spectroscopy (PES) investigation using highly monochromatic synchrotron radiation. The amount of oxygen and nitrogen incorporated in the oxynitridelayers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images.}, language = {en} } @article{SchmeisserHoffmann, author = {Schmeißer, Dieter and Hoffmann, Patrick}, title = {Characterisation of the PrOx/Si(001) Interface by Photoelectron Spectroscopy}, language = {en} } @misc{HenkelSohalTorcheetal., author = {Henkel, Karsten and Sohal, Rakesh and Torche, Mohamed and Paloumpa, Ioanna and M{\"u}ller, Klaus and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Grenzfl{\"a}chenoptimierung f{\"u}r funktionale D{\"u}nnschichtsysteme: Oxide und Polymere}, series = {Forum der Forschung}, volume = {9}, journal = {Forum der Forschung}, number = {18}, issn = {0947-6989}, pages = {49 -- 56}, language = {de} } @inproceedings{HoffmannMikaloSchmeisseretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter and Kittler, Martin}, title = {Spektro-Mikroskopie auf multikristallinem Silizium}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Es werden spektro-mikroskopische Untersuchungen an multikristallinem Silizium (mc-Si) vorgestellt, einem aussichtsreichen Material f{\"u}r die Herstellung preiswerter Solarzellen. Dazu wird ein Photoemissions- Elektronenmikroskop (PEEM) ausgestattet mit einem zus{\"a}tzlichen Energieanalysator f{\"u}r Elektronen (µESCA) genutzt. Bei Verwendung eines Synchrotrons als Anregungsquelle ist es so m{\"o}glich, sowohl Absorbtions-Spektren (NEXAFS) als auch Photoelektronen-Spektren (PES) mit Ortsaufl{\"o}sung zu erhalten. Dabei wird gezeigt, dass das nat{\"u}rliche Oxid zur Untersuchung der morphologie-abh{\"a}ngigen Oberfl{\"a}chenpotentiale nicht entfernt werden muss. Des Weiteren wird die Verteilung von Ca- und Na-Ausscheidungen, die auf dem mc-Si gefunden wurden, durch ortsaufgel{\"o}stes NEXAFS bzw. PES dargestellt. F{\"u}r den Photoemissions-Prozess des mc-Si im PEEM wird ein Modell aufgestellt, welches Photoemission mit einer Quecksilberdampflampe (hνmax = 4,9 eV) erkl{\"a}rt.}, language = {de} } @inproceedings{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Conducting Polypyrrole doped with Phthalocyaninesulfonates - new materials for chemical sensors}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Polypyrrole - a conducting polymer - is used as an active electrode of a quartz micro ballance and considered as a gate electrode in all-polymer field effect transistors used as chemical sensor. We use substituted phthalocyanines as dopants of polypyrrole as they offer the possibility to enhance the dopant concentration as well as to include functionalized groups. We studied these films by photoelectron spectroscopy, NEXAFS, PEEM, and TEM. These investigations revealed that the electronic structure as well as the morphology are highly dependent on the dopant's structure. We suggest a new charge transport model for 5-ring heterocycle conductive polymers. Whereas in the standard model only the carbon backbone is considered for the charge transport, we found by NEXAFS investigations that the heteroatom has a considerable high participation in the gap states, which are responsible for the charge transport. The dopants π-interactions force the nitrogen lone pair wave functions to contribute to the conducting polymer π-system. This is a novel approach concerning the application as chemical sensors since the reversible interaction of the analyte modifies the dopant and not the matrix.}, language = {en} } @inproceedings{HoffmannBoehmeSchmeisseretal., author = {Hoffmann, Patrick and B{\"o}hme, Oliver and Schmeißer, Dieter and Lloyd Spetz, Anita and M{\aa}rtenson, Per}, title = {Einfluß von Nanopartikeln auf die Funktion von Hochtemperatursensoren}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Es werden Untersuchungen an als Hochtemperatur-Sensoren arbeitenden Schottky-Dioden mit dem Aufbau Metall-Oxidschicht-Siliziumkarbid vorgestellt. Dazu wurden Tiefenprofile mit XPS durch abwechselndes Abtragen durch Sputtern und Messen erstellt. Die Messungen erfolgten an thermisch unterschiedlich vorbehandelten Proben. Dabei konnten dipol-bedingte Verschiebungen der Bindungsenergie von Rumpfniveaus beobachtet werden. Das dazu notwendige Dipol-Moment wird durch das Entstehen von mit einer Oxidschicht {\"u}berzogenen Nanoteilchen erkl{\"a}rt. Die unterschiedlich ausgepr{\"a}gten Dipol-Verschiebungen auf den einzelnen Proben erlaubten eine Erkl{\"a}rung der thermischen Vorbehandlung, die bei Weglassen zu „frischen" und je nach Temperatur zu „aktivierten" oder „toten" Sensoren f{\"u}hrte.}, language = {de} } @inproceedings{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Leitf{\"a}higes Polypyrrol als Elektrodenmaterial: Wechselwirkungen mit Silber}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Untersuchungen des metallischen Kontaktes von Silber auf tosylat- und phthalocyanindotiertem Polypyrrol wurden mittels XPS- und µ-NEXAFS vorgenommen. Es wurde festgestellt, daß Silber mit dem Polypyrrol keine Verbindung eingeht. Daraus kann geschlossen werden, daß sowohl das leitf{\"a}hige Polymer, als auch das Silber ihren Leitf{\"a}higkeitsmechanismus beibehalten. Es konnte gezeigt werden, daß bei steigender Silberbelegung die Intensit{\"a}t der Polaronenzust{\"a}nde des Polypyrrol in st{\"a}rkerem Maße abnimmt, als die Intensit{\"a}t der unbesetzten Zust{\"a}nde. Das l{\"a}ßt darauf schließen, daß Silber die Grenzfl{\"a}che stabilisiert.}, language = {de} } @inproceedings{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {PEEM-Untersuchung an Spaltfl{\"a}chen von MoTe2-(0001)}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Molybd{\"a}nditellurid (MoTe2) geh{\"o}rt zu den Schichtgitterverbindung und ist im allgemeinen durch den Herstellungsprozeß n-dotiert. Proben dieses MoTe2 wurden im Ultrahochvakuum gespalten und die so erhaltenen sauberen (0001)-Spaltfl{\"a}chen mit einem Photoemissions-Elektronenmikroskop (PEEM) untersucht. Diese Untersuchung erbrachte nebeneinander auf den Proben- oberfl{\"a}chen liegende stark kontrastierte helle und dunkle Bereiche. Da das PEEM Austrittsarbeitsunterschiede als Kontrast darstellt, k{\"o}nnen diese hellen und dunklen Bereiche auf lokale Unterschiede in der Austrittsarbeit zur{\"u}ckgef{\"u}hrt werden. Weiterhin wird {\"u}ber den Versuch berichtet, eine Zuordnung zwischen dem Kontrast und dem Unterschied in der Austrittsarbeit mit Hilfe eines Elektronenenergie-Analysators (micro-ESCA) zu treffen.}, language = {de} } @inproceedings{BatchelorHoffmannSchmeisseretal., author = {Batchelor, David R. and Hoffmann, Patrick and Schmeißer, Dieter and Hulea, Iulian and Brinza, Monica}, title = {The Al-Fe interface of friction-welded joints}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {The interface region of friction-welded joints Al-Fe samples is investigated by scanning Auger Spectroscopy, Electron Probe Micro-analysis (EPMA), X-ray Photoelectron spectroscopy, and Photoemission Electron Microscopy, performed at the synchrotron light source (BESSY). We investigated polished samples cut to obtain a cross-section of the Al-Fe joints. At the Al-Fe interface there is a small number of Fe teeth protuding into the adjacent Al-matrix. Beside this mechanical interlock mechanism we identify an Fe-Al alloy which is formed in an almost homogeneous interface layer of approximately 80 micron thickness. We determine the valence band spectra within that layer and notice that the alloying formation is limited to the interface region. In addition, the profile of both, the Fe and O distribution within the Al next to that interface is determined. A model of the friction-welding mechanism is derived and discussed in terms of the ability of achieving low temperature Fe-Al joints.}, language = {en} } @article{BieniekBeckJakubowskietal., author = {Bieniek, Tomasz and Beck, Romuald B. and Jakubowski, Andrzej and Konarski, Piotr and Cwil, M. and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Application of r.f. plasma ultrashallow nitrogen ion implantation for pedestal oxynitride layer formation}, language = {en} } @inproceedings{MikaloHoffmannSchmeisseretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Schmeißer, Dieter and Lloyd Spetz, Anita and Lundstr{\"o}m, Ingemar and Wawra, Herbert and Pressel, Klaus and Ourmazd, Abbas}, title = {Depth profiling using synchrotron radiation with high energetic resolution as demonstrated for Si-, SiC-, SiGe-, and SiGeC-samples}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Photoelectron spectroscopy utilizing synchrotron radiation of high energetic resolution (more than E/ΔE=3000) was used to record the Si2p emission signal of Si, SiC, SiGe, and SiGeC samples. The spectra exhibit signals of the elemental silicon as well as of fully oxidised silicon. Upon variing the photon energy, and therefore the escape depth of the photoelectrons, we find an oxidic silicon signal which is only half oxidized. This half oxidized silicon is located to be at the interface of the bulk material with the oxide. We determine the thickness of the surface oxide from the total ratio of oxidic and elemental silicon. We find differences between the interface and bulk oxides regarding their elemental composition. The line width of the elemental Si2p-signal exhibits a broadening of approximately 200meV while variing the photoelectron escape depth. This behaviour is interpreted as caused by surface stress.}, language = {en} } @inproceedings{HoffmannSchmeisser, author = {Hoffmann, Patrick and Schmeißer, Dieter}, title = {Depth Profiling of Ultrathin Oxynitride Layers Using Synchrotron Radiation}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {To determine the depth structure of samples various destructive (SIMS, depth profiling with sputtering and AES or XPS) and non-destructive techniques (RBS - Rutherford-Back-Scattering) are available. But all methods are less suitable for investigating especially ultrathin (<5nm) layers: While the destructive techniques suffer from Ion-mixing the RBS can not deliver chemical information. Due to the depth-dependent attenuation of photo-electrons XPS also contains depth information. As XPS gives only a sum signal across the layer one needs to modify the Inelastic Mean Free Path (IMFP) of the photo-electrons to vary the depth information in the photo-electron spectra. This can be done by changing the kinetic energy with the use of different excitation energies delivered from a Synchrotron. Using this method we were able to investigate the chemical depth structure of silicon oxynitride layers. The layers were grown on Si(111) by a N2O-treatment. The depth profile of that layer shows a silicon nitride layer forming the interface between the silicon substrate and the oxynitride.}, language = {en} } @inproceedings{SchmeisserWehnerHoffmannetal., author = {Schmeißer, Dieter and Wehner, Stefan and Hoffmann, Patrick and Brand, Helmut R. and K{\"u}ppers, J{\"u}rgen}, title = {Influence of the Substrate on the Pattern Formation of a Surface Reaction}, series = {Nonequilibrium statistical mechanics and nonlinear physics, XV Conference on Nonequilibrium Statistical Mechanics and Nonlinear Physics, Mar del Plata, Argentina, 4 - 8 December 2006}, booktitle = {Nonequilibrium statistical mechanics and nonlinear physics, XV Conference on Nonequilibrium Statistical Mechanics and Nonlinear Physics, Mar del Plata, Argentina, 4 - 8 December 2006}, editor = {Descalzi, Orazio}, publisher = {AIP Publishing}, address = {Melville, New York}, isbn = {978-0-7354-0421-2}, pages = {121 -- 126}, language = {en} } @inproceedings{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Si(001) surface oxidation}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {A Si(001) surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N2O at altered temperatures. Oxynitride layers of different thicknesses and different properties are grown depending on the N2O-pressure and the Si- temperature. This is illustrated by a schematic diagram. The properties of the different Oxynitride layers were studied by a combined PEEM- and PES-investigation using highly monochromatised synchrotron radiation. The amount of Oxygen and Nitrogen incorporated in the Oxynitride layers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images. A model based on differently established dipole layers in the Oxynitride layers is proposed. This model is capable of interpreting the features appearing in the PE-spectra. This model can also be applied to the interface of Si/SiO2.}, language = {en} } @article{BeckHoffmannSchmeisseretal., author = {Beck, Romuald B. and Hoffmann, Patrick and Schmeißer, Dieter and Bieniek, Tomasz and Jakubowski, Andrzej}, title = {Composition and Electrical Properties of Ultra-Thin SiOxNy Layers Formed by rf Plasma Nitrogen Implantation/Plasma Oxidation Processes}, language = {en} } @inproceedings{HoffmannGoryachkoSchmeisser, author = {Hoffmann, Patrick and Goryachko, Andriy and Schmeißer, Dieter}, title = {Growth of oxynitrides on Si-rich 4H-SiC(0001) surfaces}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Oxynitride layers are grown on 4H-SiC(0001) by a thermal treatment in N2O. The nitrogen content is controlled by varying the growth conditions (N2O pressure and substrate temperature) and the nitrogen incorporation is found to be stronger for higher substrate temperatures and lower N2O pressures. Excess carbon is generated due to SiC decomposition under such growth conditions (high temperature and low N2O pressure) which leads to unwanted high interface state density and has to be avoided. Our approach is to prepare a Si-rich or even Si-covered SiC surface by Si evaporation. Upon oxidation in N2O the additional silicon is expected to compensate the loss of silicon from the SiC while preparation. The Si-rich SiC surface as well as the grown layers were investigated by photoelectron spectroscopy (XPS) for chemical analysis and by AFM/STM for analysis of the surface morphology. Concerning the chemical analysis we focus on the total nitrogen content, on the amount of silicon nitride Si3N4 and of silicon oxynitride SiOxNy, and on the existence of sub-oxides which build the interface between SiC and the oxynitride layers.}, language = {en} } @inproceedings{HoffmannSchmeisser, author = {Hoffmann, Patrick and Schmeißer, Dieter}, title = {Growth of oxynitrides on Si-rich 4H-SiC(0001) surfaces}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {It will be reported on the growth of oxynitride thin layers (≤10nm) on (0001)-oriented 4H-SiC surfaces. The oxynitride layers were grown by a thermal treatment of the samples in low pressure N2O ambient. By varying the growth conditions (N2O pressure, sample temperature, growth time) different layers were made. The grown layers were investigated by photoelectron spectroscopy (XPS) for chemical analysis and by AFM/STM for analysis of the surface morphology. Concerning the chemical analysis it will be discussed the general nitrogen content of the samples, the composition of the films (e.g. content of silicon nitride Si3N4 and silicon oxynitride SiOxNy) and the sub-oxides which build the interface between SiC and the oxynitride layers. Concerning the surface morphology mainly the roughness will be discussed. The so obtained results for oxynitride thin films on 4H-SiC will be compared to similarly prepared oxynitride layers on Si(111) investigated in the past.}, language = {en} } @article{MroczynskiHoffmannSchmeisser, author = {Mroczynski, Robert and Hoffmann, Patrick and Schmeißer, Dieter}, title = {The Influence of Annealing (900 Grad C) of Ultra-Thin PECVD Silicon Oxynitride Layers}, language = {en} } @article{HoffmannWehnerSchmeisser, author = {Hoffmann, Patrick and Wehner, Stefan and Schmeißer, Dieter}, title = {Noise-Induced Spatiotemporal Patterns in a Bistable Reaction-Diffusion System: Photoelectron Emission Microscopy experiments and Modeling of the CO Oxidation Reaction on Ir(111)}, language = {en} } @inproceedings{HenkelTorcheSohaletal., author = {Henkel, Karsten and Torche, Mohamed and Sohal, Rakesh and Schwiertz, Carola and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces}, series = {Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A.}, booktitle = {Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A.}, editor = {Dudley, Michael}, publisher = {Materials Research Society}, address = {Warrendale, Pa.}, isbn = {978-1-55899-867-4}, pages = {353 -- 358}, language = {en} } @misc{HoffmannWehnerSchmeisseretal., author = {Hoffmann, Patrick and Wehner, Stefan and Schmeißer, Dieter and Brand, Helmut R. and K{\"u}ppers, J{\"u}rgen}, title = {Noise-induced spatiotemporal patterns in a bistable reaction-diffusion system: Photoelectron emission micrsoscopy experiments and modeling of the CO oxidation reaction on Ir(111)}, series = {Physical Review : E}, volume = {73}, journal = {Physical Review : E}, number = {5}, issn = {1550-2376}, pages = {056123}, language = {en} } @article{Hoffmann, author = {Hoffmann, Patrick}, title = {Oxynitride Grotwth on 4H-SiC(0001) by N2O}, language = {de} } @article{PaloumpaYfantisHoffmannetal., author = {Paloumpa, Ioanna and Yfantis, Alexandros D. and Hoffmann, Patrick and Burkov, Yevgen and Yfantis, Alexandros D. and Schmeißer, Dieter}, title = {Mechanisms to inhibit corrosion of Al alloys by polymeric conversion coatings}, abstract = {We introduce a recently developed novel polypyrrole-based coating, which can be formed on the aluminium surface from an aqueous pyrrole solution of fluorozirconic and fluorotitanic acid neutralised with zinc oxide. The composite layer consists of polypyrrole (Ppy) chemisorbed on titanium and zinc oxides and exhibits advanced corrosion resistance. For the investigation of the structure and the corrosion mechanism of the composite corrosion resistant layer we use a photo-electron emission microscope (PEEM). PEEM is especially suitable because it can deliver topographic contrast as well as elemental contrast and chemical information in connection with a variable X-ray source. Additionally, in order to investigate further the corrosion mechanism, but also the role of the alloy in the corrosion process, we examine the aluminium samples with SEM/EDX. The structure of the corrosion resistant layer was investigated before and after accelerated corrosion tests. Our results pointed out the important role of titanium oxide and zinc in the corrosion resistance of our Ppy coating on aluminium.}, language = {en} } @misc{HoffmannSchmeisserRotersetal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Roters, G. and Nenyei, Z.}, title = {Non-destructive probing of interfacial oxidation and nitridation states at RTA Si-oxides}, series = {Thin Solid Films}, volume = {428}, journal = {Thin Solid Films}, number = {1-2}, issn = {0040-6090}, pages = {216 -- 222}, abstract = {The quality of the SiO2/Si interface is of crucial importance in the development and performance of sub 0.1 small mu, Greekm technologies. The knowledge of the chemical composition of the interface is an important piece of information in the preparation of ultra-thin oxides and high-k dielectrics, in order to maintain a high-quality interface and channel mobility. Here we report on investigations of 2 nm oxide layers formed by a RTP process under various gas mixtures containing N2O and NH3 at different concentrations. We studied the SiO2/Si(001) interface by a non-destructive depth profiling using Synchrotron radiation photoelectron spectroscopy. We determine the thickness of the oxide layer, the relative content and chemical state of nitrogen within the oxide, the thickness of the interface layer, and the relative abundance of Si intermediate oxides within. In all systems we find the thickness of the intermediate layer to be approximately 0.17 nm. The intermediate layer contains Si atoms in the oxidation states +1, +2 and +3 with similar relative abundance. Nitrogen is found predominantly close to the intermediate layer forming Si---N as well as Si---N---O bonds. Within the oxide there are only spurious nitrogen content with predominately Si---N---O bonds. Our method is able to detect a nitrogen content within the intermediate layer as low as approximately 5\%.}, language = {en} } @article{SchmeisserPaloumpaHoffmannetal., author = {Schmeißer, Dieter and Paloumpa, Ioanna and Hoffmann, Patrick and Burkov, Yevgen and Yfantis, Alexandros D. and Yfantis, Alexandros D.}, title = {Preventing Corrosion of Aluminium Alloys by Polymeric Coatings}, abstract = {Aluminium is a material of everyday use in many applications,like automobile,aero-space or cookware,due to its specialproperties (low density,low weight,strength,easy to form and cast,abundance etc).Although aluminium is a reactive metal,italso has a significant corrosion resistance because of a thin,protective oxide layer which is generally stable in air and aqueous solutions.However,pores within the oxide film and other defects caused from alloying elements can lead to local corrosion and the formation of pits.}, language = {en} } @misc{LewerenzAggourMurrelletal., author = {Lewerenz, Hans-Joachim and Aggour, Mohammed and Murrell, Chris and Kanis, M. and Jungblut, H. and Jakubowicz, J. and Cox, P. A. and Campbell, S. A. and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Initial stages of structure formation on silicon electrodes investigated by photoelectron spectroscopy using synchrotron radiation and in-situ atomic force microscopy}, series = {Journal of the Electrochemical Society}, volume = {150}, journal = {Journal of the Electrochemical Society}, number = {3}, issn = {1945-7111}, pages = {E185 -- E189}, abstract = {The surface condition of electrochemically H-terminated Si is compared with the situation at the first photocurrent maximum in dilute acidic ammonium fluoride solution where the divalent dissolution converts into the four-valence process. The first high spectral-resolution photoelectron spectroscopy data using synchrotron radiation of electrochemically hydrogenated Si are presented. A combined electrochemistry/ultrahigh vacuum surface analysis system, attached to the U 49/2 beamline at the synchrotron Bessy II, is used for photoelectron spectroscopy (PES) of the electrochemically conditioned samples. We analyze the Si 2p, O 1s, and F 1s core levels. A comparison of a density functional theory calculation of the reaction sequence, proposed in the dissolution model of Gerischer and co-workers, with the PES results supports this model. The anodized sample is characterized by a residual H coverage of 0.35 monolayers evidenced by a surface core level shift, Si-OH and Si-Fx species, F-, and a higher oxidized Si species. SiO2 is not found. Even on very well H-terminated surfaces, we find residual Si-OH complexes, fluoride and water. In situ atomic force microscopy shows a roughening with a root mean square roughness parameter of 2.6 nm. \%A92003 The Electrochemical Society. All rights reserved.}, language = {en} } @inproceedings{HuleaHoffmannBrinzaetal., author = {Hulea, Iulian and Hoffmann, Patrick and Brinza, Monica and Batchelor, David R. and Schmeißer, Dieter}, title = {The interface of friction-welded Al-Fe joints. ATB Metallurgy}, language = {en} } @article{HoffmannMikaloBatcheloretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Batchelor, David R. and Schmeißer, Dieter and Soinski, M. S. and Follath, Rolf}, title = {The chromatic aberration of PEEM - demonstration on graphite inclusions in cast iron, Kategrorie: Microscopy - Spectromicroscopy}, language = {en} } @article{MikaloHoffmannBatcheloretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {Valence band spectroscopy of semiconducting regioregular Poly(3-Hexylthiophene)-2,5-diyl}, language = {en} } @article{GraupnerSeyllerLeyetal., author = {Graupner, R. and Seyller, Th. and Ley, L. and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {PEEM Investigation of CVD-Diamond grown on Si}, language = {en} } @article{HoffmannMikaloBatcheloretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Batchelor, David R. and Schmeißer, Dieter and Follath, Rolf}, title = {N2O-Oxidation of Si(100)}, language = {en} } @article{KraftThissenMayeretal., author = {Kraft, D. and Thißen, A. and Mayer, Thomas and Klein, A. and Jaegermann, Wolfram and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {Backcontact Formation on CdTe Thin Film Solar Cells}, language = {en} } @article{BatchelorFollathMikaloetal., author = {Batchelor, David R. and Follath, Rolf and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Commissioning Results of the BTUC-PGM beamline}, language = {en} } @article{HoffmannMikaloBoehmeetal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and B{\"o}hme, O. and Schmeißer, Dieter}, title = {PEEM-investigations on cleaved MoTe2-surfaces}, language = {en} } @article{BieniekBeckJakubowskietal., author = {Bieniek, Tomasz and Beck, Romuald B. and Jakubowski, Andrzej and Hoffmann, Patrick and Schmeißer, Dieter and Konarski, Piotr and Cwil, M.}, title = {Formation of Pedestal Oxynitride Layer by Extremely Shallow Nitrogen Implantation in Planar R.F. Plasma Reactor}, language = {en} } @inproceedings{WehnerHoffmannSchmeisseretal., author = {Wehner, Stefan and Hoffmann, Patrick and Schmeißer, Dieter and Brand, Helmut R. and K{\"u}ppers, J{\"u}rgen}, title = {CO oxidation on Ir(111) surfaces: consequences of anisotropic diffusion and noise}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 475}, abstract = {The CO oxidation reaction on Iridium(111) surfaces shows bistability in a limited range of the CO fraction of the reactant gas flux Y and a wide range of temperatures T. The two branches are characterized by their reactivity for CO2 formation. The upper rate (high CO2 formation) rate is related to high oxygen coverage on the surface, the lower rate (little CO2 formation) to high CO coverage. Quadrupol mass spectroscopy and PEEM (photoelectron emission microscopy) was employed to study the influence of a noisy reactant gas flux composition on the spatio-temporal pattern development in the CO oxidation reaction on flat Ir(111) and stepped Ir(977) surfaces. PEEM shows nucleation and growth of few oxygen resp. CO islands at small noise amplitudes. Anisotropic diffusion of CO parallel and normal to the steps causes elliptic shapes of large islands. The long axes of the ellipses are aligned along the steps. At increased noise amplitudes the density of islands becomes larger. 2D modeling of the phenomena based on reaction-diffusion differential equations reproduces the experimental findings quite nicely.}, language = {en} } @article{Hoffmann, author = {Hoffmann, Patrick}, title = {Oxynitride on 4H-SiC (0001)}, abstract = {It will be reported on the growth of oxynitride ultra-thin layers (<2 nm) on (0 0 0 1)-oriented 4H-SiC surfaces. The oxynitride layers were grown by a thermal treatment of the samples in low pressure (up to 1000 Pa) N2O ambient. By varying the growth conditions (N2O pressure, sample temperature, growth time) different layers were made. The highest nitrogen incorporation was found to be at high temperatures and low N2O pressures.The grown layers were investigated by photoelectron spectroscopy (XPS) for chemical analysis. Concerning the chemical analysis, the general nitrogen content of the samples is compared at different preparation conditions. The films are found to consist mainly of SiO2 and small fraction of silicon nitride. Only a tenth of the nitrogen was incorporated as oxynitride. The results obtained for oxynitride thin films on 4H-SiC are compared to similarly prepared oxynitride layers on Si(1 1 1) investigated in the past. Furthermore, an additional source of nitrogen due to dopand diffusion in the SiC single crystal is reported.}, language = {en} } @misc{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Praseodymium silicate layers with atomically abrupt interface on Si(100)}, series = {Applied Physics Letters}, volume = {87}, journal = {Applied Physics Letters}, number = {5}, issn = {0003-6951}, pages = {S. 092901}, language = {en} } @article{HoffmannSchmeisserSoinski, author = {Hoffmann, Patrick and Schmeißer, Dieter and Soinski, M. S.}, title = {Promieniowanie synchrotronowe jako uniwersalne narzedzie badawcze - Proby jego wykorzystania w badaniach struktury zeliwa}, language = {de} } @article{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Band Bending in Doped Conducting Polypyrrole Interaction with Silver}, language = {en} } @article{SchmeisserMikaloHoffmannetal., author = {Schmeißer, Dieter and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Seyller, Th. and Ley, L. and Lloyd Spetz, Anita}, title = {Oxide growth on SiC (0001) surfaces}, language = {en} } @article{MikaloHoffmannBatcheloretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter and Lloyd Spetz, Anita and Lundstr{\"o}m, Ingemar}, title = {Comparison of HF and ozone treated SiC surfaces}, language = {en} } @inproceedings{HoffmannMikaloBatcheloretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Batchelor, David R. and Beuckert, Guido and Schmeißer, Dieter and Kittler, Martin and Ourmazd, A. and Lewerenz, Hans-Joachim}, title = {Solare Energieumwandlung in d{\"u}nnen Schichten}, language = {de} } @article{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter and Mast, M.}, title = {Multi-Atom Resonant Photoemission applied to study the silver to nitrogen interaction in polypyrrole films}, language = {en} } @article{HoffmannSchmeisserKleinetal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Klein, A. and Jaegermann, Wolfram and Pettenkofer, Christian and Follath, Rolf}, title = {Spectro-Microscopy with PEEM / µESCA}, language = {en} } @inproceedings{HoffmannBatchelorSchmeisser, author = {Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {Spectro-Microscopic analyses in metallurgical systems: spheroidic graphite in cast iron and the interface of friction-welded Al-Fe joints}, language = {en} } @article{SchmeisserAppelBoehmeetal., author = {Schmeißer, Dieter and Appel, G{\"u}nter and B{\"o}hme, O. and Heller, Thomas and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R.}, title = {Nanoparticles and polarons: active centers in thin film sensor devices}, language = {de} } @article{MikaloHoffmannHelleretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Heller, Thomas and Batchelor, David R. and Appel, G{\"u}nter and Schmeißer, Dieter}, title = {Doping and defect inhomogeneities of polypyrrole tosylate films as revealed by ?-NEXAFS}, language = {en} } @article{HoffmannMikaloSchmeisseretal., author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter and Kittler, Martin}, title = {A spectro-microscopic approach to study the morphology and elemental distribution of mc-Si surfaces}, language = {en} } @article{MikaloHoffmannBoehmeetal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and B{\"o}hme, O. and Schmeißer, Dieter}, title = {Doping inhomogenities in Polypyrrole films: a Photoemission Electron Microscope (PEEM) and Spectro-Microscopic Study}, language = {en} } @article{MikaloHoffmannHelleretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Heller, Thomas and Schmeißer, Dieter}, title = {Lateral Doping Inhomogeneities as Revealed by ?-NEXAFS and ?-PES}, language = {en} } @misc{HoffmannSchmeisser, author = {Hoffmann, Patrick and Schmeißer, Dieter}, title = {Improvement of Nitrogen Incorporation into Oxynitrides on 4H-SiC(0001)}, series = {Nuclear Instruments and Methods in Physics Research, Section B : Beam with Materials and Atoms}, volume = {246}, journal = {Nuclear Instruments and Methods in Physics Research, Section B : Beam with Materials and Atoms}, number = {1}, pages = {85 -- 89}, language = {en} } @article{WehnerSchmeisserHoffmann, author = {Wehner, Stefan and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Spatiotemporal patterns of external noise-induced transitions in a bistable reaction-diffusion system : Photoelectron Emission Microscopy experiments and modeling}, language = {en} } @article{Hoffmann, author = {Hoffmann, Patrick}, title = {Chemical state depth profiling of ultra-thin oxynitride layers by photoelectron spectroscopy}, language = {en} } @misc{LewerenzMurrellJakubowiczetal., author = {Lewerenz, Hans-Joachim and Murrell, Chris and Jakubowicz, J. and Aggour, Mohammed and Kanis, M. and Campbell, S. A. and Cox, P. A. and Hoffmann, Patrick and Jungblut, H. and Schmeißer, Dieter}, title = {High Resolution Surface analysis of Si Roughenning in Dilute Ammonium Fluoride Solution}, series = {Journal of Electroanalytical Chemistry}, volume = {540}, journal = {Journal of Electroanalytical Chemistry}, issn = {1873-2569}, pages = {3 -- 6}, abstract = {The initial stages of porous Si formation on Si(111) in dilute ammonium fluoride solution are analysed by photoelectron spectroscopy using synchrotron radiation (SRPES). The PES results in the por-Si formation regime partly support a recent dissolution model. The contribution from the Si 2p surface core level shift shows that 0.35 ML of the surface is still H-terminated after interruption of the conditioning process at the first photocurrent maximum. Two signals shifted in binding energy by 0.8 and 1 eV, respectively, are attributed to reaction intermediates expected from the proposed reaction mechanism and from theoretical calculations using density functional theory (DFT). A distinct roughening is found in in-situ AFM measurements, with a calculated RMS roughness parameter of 2.6 nm.}, language = {en} } @misc{LewerenzAggourMurrelletal., author = {Lewerenz, Hans-Joachim and Aggour, Mohammed and Murrell, Chris and Kanis, M. and Hoffmann, Patrick and Jungblut, H. and Schmeißer, Dieter}, title = {Interface engineering of photoelectrochemically prepared Si surfaces}, abstract = {The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface.}, language = {en} } @phdthesis{Hoffmann, author = {Hoffmann, Patrick}, title = {Untersuchungen zu Inhomogenit{\"a}ten an der Halbleitergrenzfl{\"a}che Silizium-Siliziumoxynitrid}, publisher = {Shaker-Verlag}, address = {Aachen}, isbn = {3-8322-1982-X}, pages = {179}, language = {de} } @article{SieberSeyllerGraupneretal., author = {Sieber, N. and Seyller, Th. and Graupner, R. and Ley, L. and Mikalo, Ricardo Pablo and Hoffmann, Patrick and Batchelor, David R. and Schmeißer, Dieter}, title = {Wet-chemical preparation of silicate adlayer reconstructed SiC(0001) surfaces as studied by PIES and LEED}, abstract = {We have studied the surface chemistry of 6H-SiC(0001) and 6H-SiC (000 (1) over bar) after wet-chemical treatment using photoelectron spectroscopy (PES) andlow-energy electron diffraction (LEED). The origin of chemically shifted components in the Si2p and C1s spectra is discussed in the light of previous studies onwet-chemically prepared surfaces and on silicate adlayer reconstructed surfaces. On 6H-SiC(0001) an ordered silicate adlayer was prepared by etching the surface withsulfuric acid based agents.}, language = {en} } @misc{AggourStoerkelMurrelletal., author = {Aggour, Mohammed and Stoerkel, Ulrich and Murrell, Chris and Campbell, S. A. and Jungblut, H. and Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter and Lewerenz, Hans-Joachim}, title = {Electrochemical interface modification of CuInS2 thin films}, abstract = {We studied two novel electrochemical treatments of CuInS2 solar-cell absorber films, introduced to remove the deleterious segregated CuS phase. Their influence onsurface topography, chemistry and electronic properties was investigated using in situ atomic force microscopy (AFM) and photoclectron spectroscopy, performed inpart at the U49/2 undulator beam line at BESSY II. The results are examined in order to develop an improved understanding of the chemical-electrochemical surfacetransformation processes.}, language = {en} } @article{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {PEEM - a spectromicroscopic tool for mc-Si surface evaluation}, abstract = {The photo emission electron microscope (PEEM) with its direct imaging of the sample surface is a convenient tool for fast evaluation of large sample areas. It is possibleto handle samples with a size of 30 mm x 30 mm.With PEEM it is possible to visualise grain boundaries and crystal displacements without removing the native oxide. No special sample treatment is needed exceptchemical polishing of the sample surface and a HF-dip to obtain a thin (1 ... 2 nm) oxide layer.The quality of that oxide was proofed by high resolution photo electron spectroscopy (PES) at a synchrotron. The results were compared to native oxide onsingle-crystalline Si and no suboxides (e.g. SiO) were found. Our spectromicroscopic PEEM measurements show no difference in the oxide qualities of different grainsand on grain boundaries or crystal displacements. Furthermore no difference in the binding energy of Si2p core levels were found.In addition to grain boundaries other spot-like features were found on the sample surface. These could be identified in some cases as precipitation of Ca underneath thenative oxide.}, language = {en} } @incollection{SchmeisserHoffmannMuessig, author = {Schmeißer, Dieter and Hoffmann, Patrick and M{\"u}ssig, Hans-Joachim}, title = {The Pr2O3/Si(001) interface: a mixed Si-Proxide}, series = {BESSY annual report 2001}, booktitle = {BESSY annual report 2001}, publisher = {Bessy}, address = {Berlin}, pages = {171 -- 173}, language = {en} } @article{MuellerHoffmannMilkoetal., author = {M{\"u}ller, Klaus and Hoffmann, Patrick and Milko, S. and Burkov, Yevgen and Schmeißer, Dieter}, title = {PEEM and µ-NEXAFS of Cu-In-S-Surfaces}, abstract = {The composition of CuInS2-films tends to differ from the ideal ratio of 1:1:2. A molecularlyvariation of dm=[Cu]/[In]-1 not equal 0 occurs due to the formation of binary phases as segregation's at the surface, as crystallites in the bulk of the film or at the surface of grains [1]. Furthermore, the range of homogeneity of the phase CuInS2 is relatively large caused by a low enthalpy of formation of defects like Cu-vacancies [2]. Segregation's at surfaces can be removed by KCN etching or by an electrochemical process [3, 4] We investigated the effect of an in-situ-heat-treatment of samples, prepared in the Cu-rich regime with additional amounts of copper, deposited on the surface of the Cu-In-S-films.We used Cu-In-S-films on molybdenum, prepared from precursors of Cu/In and a following reactive annealing-process in a sulphur-atmosphere. The experiments were performed as follows: The surface of the films was cleaned in situ to remove CuS-Phases by Argon-bombardment. The thin layers of additional Copper were prepared by evaporation of copper metal in Knudsen-cells. The thickness of this copper-films is in the range of monolayers, revealed by a calibration with copper on iron-substrates. After this deposition the samples were heated up to several temperatures (up to 550 ºC) for ten minutes, respectively. Here the molybdenum back-contact was used as electrical heater.}, language = {en} } @incollection{HenkelHoffmannSchmeisser, author = {Henkel, Karsten and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Backpropagation-Netzwerke f{\"u}r ein Zweisensorsystem zur Erfassung von Kohlendioxidkonzentrationen und relativer Luftfeuchte}, series = {Sensoren im Fokus neuer Anwendungen : Verbraucherschutz und Lebensmittelkontrolle, Biosysteme und Nanobiotechnologie, Umweltmesstechnik, neue Sensormaterialien, Mess- und Eichwesen}, booktitle = {Sensoren im Fokus neuer Anwendungen : Verbraucherschutz und Lebensmittelkontrolle, Biosysteme und Nanobiotechnologie, Umweltmesstechnik, neue Sensormaterialien, Mess- und Eichwesen}, publisher = {w.e.b. Universit{\"a}tsverlag}, address = {Dresden}, isbn = {3-935712-71-5}, pages = {104 -- 107}, abstract = {Zwei Schwingquarzsensoren mit gleicher sensitiver Beschichtung wurden zur Messung von CO2-Konzentrationen bei variierenden Luftfeuchten genutzt. Die Daten wurden neuronalen Netzen mit unterschiedlicher Architektur trainiert. Zwei Netze wurden auf ihre Generalisierungsf{\"a}higkeit getestet und miteinander verglichen. F{\"u}r ein einstufiges Netz konnten Ergebnisse mit Fehlern kleiner 12\% f{\"u}r die CO2-Konzentration und kleiner 5\% f{\"u}r die Luftfeuchte erzielt werden. Ein zweistufiges Netz erkannte Kategorien der Luftfeuchte 100\%-ig, f{\"u}r die CO2-Konzentration wurden Fehler kleiner 9\% erreicht, wobei eine deutlich bessere Generalisierungsf{\"a}higkeit dieses Netzes im Vergleich zum einstufigen Netz zu verzeichnen ist.}, language = {de} } @article{BatchelorHoffmannSchmeisser, author = {Batchelor, David R. and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Photoemission study of Aluminium Steel cold welded joints}, abstract = {Aluminium and Stainless Steel bi-metal material is extremely versatile and is used in a wide range of products; from cooking utensils to high technology applications such as automobile manufacture and Synchrotron radiation instrumentation. As a consequence of this wide range of applications the study of the formation of Aluminium Steel junctions and the bonding mechanism is of considerable industrialimportance [1-3].In a previous publication [4] evidence for a chemical bond, alloying at the interface was found. As the monochromator focus and welded region are similar in size about 200 µm (the actual interface from SEM is an order of magnitude smaller) a simple photoemission experiment of translating the sample perpendicular (vertically, weld horizontal) to the weld and measuring spectra was performed.}, language = {en} } @article{JaeckelThissenHungeretal., author = {J{\"a}ckel, B. and Thißen, A. and Hunger, Ralf and Klein, A. and Jaegermann, Wolfram and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Focus IS-PEEM investigations at U49/II: experimental determination of a magnification function, the contrast mechanism and the spectral resolution}, language = {en} } @article{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {A spectro-microscopic approach for spatially resolved characterisation of semiconductor structures in PEEM}, language = {en} } @article{MikaloAppelHoffmannetal., author = {Mikalo, Ricardo Pablo and Appel, G{\"u}nter and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Determination of the Vacuum Level in NEXAFS-spectra by Selected-Yield-NEXAFS}, language = {en} } @article{HoffmannMikaloSchmeisser, author = {Hoffmann, Patrick and Mikalo, Ricardo Pablo and Schmeißer, Dieter}, title = {Photoemissionselektronenmikroskopie - ein Instrument f{\"u}r die Materialforschung}, language = {de} } @inproceedings{HoffmannSchmeisserEngelmannetal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Engelmann, Hans-J{\"u}rgen and Zschech, Ehrenfried and Stegmann, Heiko and Himpsel, Franz J. and Denlinger, Jonathan D.}, title = {Characterization of chemical bonding in low-k dielectric materials for interconnect isolation: A XAS and EELS Study}, series = {Materials, technology and reliability of low-k dielectrics and copper interconnects, symposium held April 18 - 21, 2006, San Francisco, California}, booktitle = {Materials, technology and reliability of low-k dielectrics and copper interconnects, symposium held April 18 - 21, 2006, San Francisco, California}, editor = {Tsui, Ting Y.}, publisher = {Materials Research Society}, address = {Warrendale, Pa.}, isbn = {978-1-55899-870-5}, pages = {55 -- 62}, language = {en} } @inproceedings{HoffmannSchmeisserHimpseletal., author = {Hoffmann, Patrick and Schmeißer, Dieter and Himpsel, Franz J. and Engelmann, Hans-J{\"u}rgen and Zschech, Ehrenfried and Stegmann, Heiko and Denlinger, Jonathan D.}, title = {Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: XAS and EELS Study}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 156}, abstract = {The use of low dielectric constant materials in the on-chip interconnect process reduces interconnect delay, power dissipation and crosstalk noise. In CVD deposited organo-silicate glass (OSG) the substitution of oxygen in SiO2 by methyl groups (-CH3) reduces the permittivity significantly (from 4.0 in SiO2 to 2.6-3.3 in the OSG). However, plasma processing removes C and H containing molecular groups. Therefore, compositional analysis and chemical bonding characterization of structured films with nanometer resolution is necessary. OSG thin films as-deposited and after plasma treatment are studied using XAS and EELS. In both techniques, the fine structure near the C1s edge allows to identify C-H, C-C, and C-O bonds. XAS spectra have been recorded for non-patterned films and EELS spectra for patterned structures. The chemical bonding is compared for as-deposited and plasma-treated low-k materials. The flu-orescence and the electron yield recorded while XAS measurement are compared. Examination of the C 1s near-edge structures reveal a mod-ified bonding of the remaining C atoms in the plasma-treated sample regions.}, language = {en} } @incollection{SchmeisserHoffmannBeuckert, author = {Schmeißer, Dieter and Hoffmann, Patrick and Beuckert, Guido}, title = {Electronic Properties of the Interface Formed by Pr2o3 Growth on Si(001), Si(111)and SiC(0001) Surfaces}, editor = {Zschech, Ehrenfried and Whelan, Caroline}, language = {en} } @inproceedings{ZschechStegmannSchmeisseretal., author = {Zschech, Ehrenfried and Stegmann, Heiko and Schmeißer, Dieter and Hoffmann, Patrick}, title = {Chemical Bonding, Permittivity, and Elastic Properties in Locally Modified Organosilicate Glass}, language = {en} }