@inproceedings{MikaloHoffmannSchmeisseretal., author = {Mikalo, Ricardo Pablo and Hoffmann, Patrick and Schmeißer, Dieter and Lloyd Spetz, Anita and Lundstr{\"o}m, Ingemar and Wawra, Herbert and Pressel, Klaus and Ourmazd, Abbas}, title = {Depth profiling using synchrotron radiation with high energetic resolution as demonstrated for Si-, SiC-, SiGe-, and SiGeC-samples}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Photoelectron spectroscopy utilizing synchrotron radiation of high energetic resolution (more than E/ΔE=3000) was used to record the Si2p emission signal of Si, SiC, SiGe, and SiGeC samples. The spectra exhibit signals of the elemental silicon as well as of fully oxidised silicon. Upon variing the photon energy, and therefore the escape depth of the photoelectrons, we find an oxidic silicon signal which is only half oxidized. This half oxidized silicon is located to be at the interface of the bulk material with the oxide. We determine the thickness of the surface oxide from the total ratio of oxidic and elemental silicon. We find differences between the interface and bulk oxides regarding their elemental composition. The line width of the elemental Si2p-signal exhibits a broadening of approximately 200meV while variing the photoelectron escape depth. This behaviour is interpreted as caused by surface stress.}, language = {en} }