@inproceedings{VyvenkoKruegerKittler, author = {Vyvenko, Oleg F. and Kr{\"u}ger, O. and Kittler, Martin}, title = {Temperature-dependent Cross-sectional EBIC Study of Hydrogen Passivation of Defects in mc-Si}, language = {en} } @article{KittlerYuVyvenkoetal., author = {Kittler, Martin and Yu, Xuegong and Vyvenko, Oleg F. and Birkholz, Mario and Seifert, Winfried and Reiche, Manfred and Wilhelm, T. and Arguirov, Tzanimir V. and Wolff, A. and Fritzsche, W. and Seibt, M.}, title = {Self-organized pattern formation of biomolecules at Si surfaces: Intended application of a dislocation network}, language = {en} } @misc{KittlerYuMtchedlidzeetal., author = {Kittler, Martin and Yu, Xuegong and Mtchedlidze, T. and Arguirov, Tzanimir V. and Vyvenko, Oleg F. and Seifert, Winfried and Reiche, Manfred and Wilhelm, T. and Seibt, M. and Voss, O. and Wolff, A. and Fritzsche, W.}, title = {Regular dislocation networks in silicon as a tool for nanostructures devices used in optics, biology and electronics}, language = {en} } @article{KittlerArguirovMtchedlidzeetal., author = {Kittler, Martin and Arguirov, Tzanimir V. and Mtchedlidze, T. and Seifert, Winfried and Vyvenko, Oleg F. and Wilhelm, T. and Yu, Xuegong}, title = {Dislocations in silicon as a tool to be used in optics, electronics and biology}, language = {en} } @article{RatzkeYuVyvenkoetal., author = {Ratzke, Markus and Yu, Xuegong and Vyvenko, Oleg F. and Reif, J{\"u}rgen and Kittler, Martin and Reiche, Manfred}, title = {Scanning Probe studies of the electrical activity at interfaces formed by silicon wafer direct bonding}, series = {Physica Status Solidi C}, volume = {4}, journal = {Physica Status Solidi C}, number = {8}, issn = {1610-1634}, pages = {2893 -- 3897}, language = {en} } @article{YuVyvenkoSeifertetal., author = {Yu, Xuegong and Vyvenko, Oleg F. and Seifert, Winfried and Arguirov, Tzanimir V. and Wilhelm, T. and Reiche, Manfred}, title = {Luminescence of dislocation network in directly bonded silicon wafers}, language = {en} } @inproceedings{ArguirovKittlerOehmeetal., author = {Arguirov, Tzanimir V. and Kittler, Martin and Oehme, Michael and Abrosimov, Nikolay V. and Vyvenko, Oleg F. and Kasper, Erich and Schulze, J{\"o}rg}, title = {Luminescence from Germanium and Germanium on Silicon}, series = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, booktitle = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, publisher = {Trans Tech Publ.}, address = {Durnten-Zurich [u.a.]}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.205-206.383}, pages = {383 -- 393}, language = {en} } @article{KittlerSeifertYuetal., author = {Kittler, Martin and Seifert, Winfried and Yu, Xuegong and Jia, G. and Vyvenko, Oleg F. and Mtchedlidze, T. and Reiche, Manfred and Sha, J. and Yang, D. and Arguirov, Tzanimir V.}, title = {Silicon naostructures for IR light emitters}, series = {Materials Sience and Engineering C}, volume = {27}, journal = {Materials Sience and Engineering C}, number = {5-8}, issn = {1873-0191}, pages = {1252 -- 1259}, language = {en} } @misc{TrushinVarlamovLoshachenkoetal., author = {Trushin, Maxim and Varlamov, A. and Loshachenko, A. and Vyvenko, Oleg F. and Kittler, Martin}, title = {Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon}, series = {Journal of Physics: Conference Series}, volume = {1190}, journal = {Journal of Physics: Conference Series}, number = {1}, issn = {1742-6596}, doi = {10.1088/1742-6596/1190/1/012005}, pages = {10}, abstract = {Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si.}, language = {en} } @article{VyvenkoKruegerKittler, author = {Vyvenko, Oleg F. and Kr{\"u}ger, O. and Kittler, Martin}, title = {Depth Profiling of the Recombination Activity of Defects Measured by Temperature-dependent Cross-sectional EBIC}, language = {en} }