@inproceedings{HilsenbeckLenkLossyetal., author = {Hilsenbeck, Jochen and Lenk, Friedrich and Lossy, Richard and W{\"u}rfl, Joachim and Kohler, K. and Obloh, H.}, title = {DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line}, series = {IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000}, booktitle = {IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6258-6}, doi = {10.1109/ISCS.2000.947181}, pages = {351 -- 356}, abstract = {DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties}, language = {en} }