@misc{KittlerYuMtchedlidzeetal., author = {Kittler, Martin and Yu, Xuegong and Mtchedlidze, T. and Arguirov, Tzanimir V. and Vyvenko, Oleg F. and Seifert, Winfried and Reiche, Manfred and Wilhelm, T. and Seibt, M. and Voss, O. and Wolff, A. and Fritzsche, W.}, title = {Regular dislocation networks in silicon as a tool for nanostructures devices used in optics, biology and electronics}, language = {en} } @article{MtchedlidzeArguirovKittleretal., author = {Mtchedlidze, T. and Arguirov, Tzanimir V. and Kittler, Martin and Hoang, T. and Hollemann, J. and Schmitz, J.}, title = {Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect}, language = {en} } @article{KittlerArguirovMtchedlidzeetal., author = {Kittler, Martin and Arguirov, Tzanimir V. and Mtchedlidze, T. and Seifert, Winfried and Vyvenko, Oleg F. and Wilhelm, T. and Yu, Xuegong}, title = {Dislocations in silicon as a tool to be used in optics, electronics and biology}, language = {en} } @misc{MtchedlidzeArguirovKittleretal., author = {Mtchedlidze, T. and Arguirov, Tzanimir V. and Kittler, Martin and Hoang, T. and Hollemann, J. and LeMinh, P. and Schmitz, J.}, title = {Engineering of dislocation loops for light emission from silicon diodes}, series = {Solid State Phenomena}, volume = {131/133}, journal = {Solid State Phenomena}, issn = {1012-0394}, pages = {303 -- 308}, language = {en} } @article{MtchedlidzeWilhelmYuetal., author = {Mtchedlidze, T. and Wilhelm, T. and Yu, Xuegong and Arguirov, Tzanimir V. and Jia, G. and Reiche, Manfred and Kittler, Martin}, title = {Regular dislocation networks in Si. Part II: Lunimescence}, series = {Solid State Phenomena}, volume = {131/133}, journal = {Solid State Phenomena}, issn = {1012-0394}, pages = {503 -- 510}, language = {en} } @misc{HoangHollemannLeMinhetal., author = {Hoang, T. and Hollemann, J. and LeMinh, P. and Schmitz, J. and Mtchedlidze, T. and Arguirov, Tzanimir V. and Kittler, Martin}, title = {Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes}, series = {IEEE transactions on electron devices}, volume = {54}, journal = {IEEE transactions on electron devices}, number = {8}, issn = {0018-9383}, pages = {1860 -- 1866}, language = {en} } @article{MtchedlidzeArguirovKittleretal., author = {Mtchedlidze, T. and Arguirov, Tzanimir V. and Kittler, Martin and R{\"o}lver, R. and Berghoff, B. and F{\"o}rst, M. and Spangenberg, B.}, title = {Structural and optical properties of Si/SiO2 multi-quantum wells}, language = {en} } @article{MtchedlidzeArguirovJiaetal., author = {Mtchedlidze, T. and Arguirov, Tzanimir V. and Jia, G. and Kittler, Martin}, title = {Signatures of distinct structures related to rod-like defects in silicon detected by various measurement methods}, language = {en} } @article{ArguirovMtchedlidzeKittleretal., author = {Arguirov, Tzanimir V. and Mtchedlidze, T. and Kittler, Martin and R{\"o}lver, R. and Berghoff, B. and F{\"o}rst, M. and Spangenberg, B.}, title = {Residual stress in Si nanocrystals embedded in a SiO2 matrix}, language = {en} } @article{MtchedlidzeArguirovKoutevaArguirovaetal., author = {Mtchedlidze, T. and Arguirov, Tzanimir V. and Kouteva-Arguirova, Simona and Jia, G. and Kittler, Martin and R{\"o}lver, R. and Berghoff, B. and F{\"o}rst, M. and Batzner, D. L. and Spangenberg, B.}, title = {Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells}, language = {en} }