@article{Torche, author = {Torche, Mohamed}, title = {The interaction of titanium to Pr2O3 thin films dielectrics}, language = {de} } @misc{HenkelSohalTorcheetal., author = {Henkel, Karsten and Sohal, Rakesh and Torche, Mohamed and Paloumpa, Ioanna and M{\"u}ller, Klaus and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Grenzfl{\"a}chenoptimierung f{\"u}r funktionale D{\"u}nnschichtsysteme: Oxide und Polymere}, series = {Forum der Forschung}, volume = {9}, journal = {Forum der Forschung}, number = {18}, issn = {0947-6989}, pages = {49 -- 56}, language = {de} } @inproceedings{SohalTorcheSchmeisser, author = {Sohal, Rakesh and Torche, Mohamed and Schmeißer, Dieter}, title = {Al-Oxynitrides as a Buffer Layer for Pr2O3/SiC Interfaces}, language = {en} } @article{TorcheHenkelSchmeisser, author = {Torche, Mohamed and Henkel, Karsten and Schmeißer, Dieter}, title = {The interaction of Al, Ag, Au and Ti to Pr2O3 thin film dielectrics}, language = {en} } @article{HenkelSohalSchmeisseretal., author = {Henkel, Karsten and Sohal, Rakesh and Schmeißer, Dieter and Schwiertz, Carola and Burkov, Yevgen and Torche, Mohamed}, title = {Al-oxynitride buffer layer facilities for PrOx/SiC interfaces}, language = {en} } @misc{HenkelTorcheSohaletal., author = {Henkel, Karsten and Torche, Mohamed and Sohal, Rakesh and Karavaev, Konstantin and Burkov, Yevgen and Schwiertz, Carola and Schmeißer, Dieter}, title = {Pr-O-Al-N dielectrics for metal insulator semiconductor stacks}, language = {en} } @misc{HenkelBurkovKaravaevetal., author = {Henkel, Karsten and Burkov, Yevgen and Karavaev, Konstantin and Torche, Mohamed and Schwiertz, Carola and Schmeißer, Dieter}, title = {Optimization of the AION buffer layer for PrxOy/Si stacks}, language = {de} } @inproceedings{HenkelBurkovBergholzetal., author = {Henkel, Karsten and Burkov, Yevgen and Bergholz, Matthias and Karavaev, Konstantin and Sohal, Rakesh and Torche, Mohamed and Schmeißer, Dieter}, title = {Al-Oxynitride as a buffer layer for high-k dielectrics}, series = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, booktitle = {Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin)}, pages = {161 -- 162}, language = {en} } @article{HenkelKaravaevTorcheetal., author = {Henkel, Karsten and Karavaev, Konstantin and Torche, Mohamed and Schwiertz, Carola and Burkov, Yevgen and Schmeißer, Dieter}, title = {Al-Oxyxynitride interfacial layer investigations for PrXOY on SiC and Si}, language = {en} } @inproceedings{HenkelTorcheSohaletal., author = {Henkel, Karsten and Torche, Mohamed and Sohal, Rakesh and Schwiertz, Carola and Hoffmann, Patrick and Schmeißer, Dieter}, title = {Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces}, series = {Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A.}, booktitle = {Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A.}, editor = {Dudley, Michael}, publisher = {Materials Research Society}, address = {Warrendale, Pa.}, isbn = {978-1-55899-867-4}, pages = {353 -- 358}, language = {en} } @phdthesis{Torche, author = {Torche, Mohamed}, title = {Praseodymium oxide as dielectric in MIS stacks}, address = {Cottbus}, pages = {V, 106}, language = {en} } @inproceedings{HenkelSohalTorcheetal., author = {Henkel, Karsten and Sohal, Rakesh and Torche, Mohamed and Schwiertz, Carola and Burkov, Yevgen and Schmeißer, Dieter}, title = {PrOx/AlON stacks as a high-k candidate on SiC}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 215}, abstract = {We study the chemical stability and electrical properties of Pr-oxides-SiC MIS stacks. In MISFET devices for high power applications the electric field scaling at the interface between semiconductor and insulator is determined by the ratio of their permittivity values. A high-k material can be used to optimize the performance of such devices. In previous studies we had to understand that the chemical reactivity of the PrOx/SiC interface causes a destructive interaction yielding silicate and graphite formation as well as poor electrical performance after direct deposition of PrOx onto SiC. Therefore we introduced an additional chemically inert layer and in this contribution we focus on PrOx/AlON as a suitable insulator stack. In our spectroscopic investigations we recognized a stable AlON/3C-SiC interface even for annealing steps up to 900∘C. First electrical characterizations are performed on Si substrates and we find a strong improvement in the leakage current by several orders of magnitude down to values of 10-7 A/cm2 at an EOT of 4nm and interface state densities of mean values of 5*1011/eVcm2. We also report on our ongoing electrical characterization of such stacks on SiC substrates. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/9-2).}, language = {en} } @inproceedings{HenkelTorcheSchwiertzetal., author = {Henkel, Karsten and Torche, Mohamed and Schwiertz, Carola and Paloumpa, Ioanna and Sohal, Rakesh and M{\"u}ller, Klaus and Schmeißer, Dieter}, title = {Inorganic and organic layers for high-k and organic memory applications}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 127}, abstract = {We report about organic and inorganic MIS stacks for new possibilities for high frequency and high power applications as well as for non volatile memory cell. The organic stack contains a ferroelectric polymer as the functional layer. Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is spin coated from a solution onto oxidised silicon substrates. We report on the polarisation induced flatband voltage shifts. For the inorganic stack our attempt is to combine higk-k dielectrics with high band gap semiconductors (SiC). Praseodymium oxide layers are prepared by electron beam evaporation from Pr6O11 powder and in situ controlling of interface and volume composition (XPS). Praseodymium silicate layers were prepared either by metal evaporation onto a thin ox- ide on top of the semiconductor and following annealing steps or by a wet chemical process out of aqueous Pr(NO3)3 solutions. Using spectro-scopic characterisation we investigate the stability of the various inter-faces within the stacks as well as the reactivity of the metal electrodes on thin Pr2O3. We report the results of electrical characterisation consisting of permittivity values, leakage current and density of interface states.}, language = {en} } @inproceedings{TorcheMuellerHenkeletal., author = {Torche, Mohamed and M{\"u}ller, Klaus and Henkel, Karsten and Lupina, Grzegorz and Goryako, Andrey and Wollweber, J{\"u}rgen and Schmeißer, Dieter}, title = {Investigations of 3C-SiC growth on Si (001)}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Carbide was grown on Si (001) - substrates with supply of C2H2. Investigation of the interface Si/SiC (buffer layer) is essential for optimized preparation conditions, leading to a high quality of the growing SiC crystal. In addition to the lattice mismatch of 20 per cent between Si and SiC, which causes defects like dislocations or stacking faults, the chemical homogeneity of this layer is important. XPS was used to characterize the first state of SiC crystal growth on the Si substrate. Carbonizing with C2H2 leads to surface reactions which build up the buffer layer. By using electron spectroscopy, it was possible to characterize the SiC/Si (001) buffer layer, depending on the following reaction parameters: Tsubstrate , PC2H2 , PH2 , the ratio of pressures and the reaction time. The measurements were performed in terms of the content of carbide, oxide and roughness/etching-efficiency (Profilometer) for the reaction parameters above. We found, that the most critical parameter is the temperature of the substrate (Tsubstrate).}, language = {en} } @inproceedings{TorcheSchmeisser, author = {Torche, Mohamed and Schmeißer, Dieter}, title = {The interaction of Al, Au, Ag, and Ti metal contacts with Pr2O3 thin films}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Pr2O3 is one of the promising high-k oxides desirable to replace SiO2 for the sub-100nm field-effect transistors (FETs) and dynamic random access memory (DRAM) capacitors. Here we focus on the metallic contacts used for the MOS and MIM based structures. With the thickness of Pr2O3 being around 3nm the metal interaction is crucial to avoid a reduction of the dielectric properties by metal percolation, crack filling or diffusion processes. We use XPS and SRPS to study the initial interaction as well as the thermal stability of metals (Al, Ag, Au, and Ti) on Pr2O3 films. We show that Al, Ag, Au form initial metallic layer which react already at temperatures around 300∘C. In contrast, Ti is found to be more stable than the other metals. We determine the formation of Ti-oxides at the Ti / Pr2O3 interface and its thermal stability. Ti is found to build a good diffusion barrier between the oxide and the metal.}, language = {en} }