@misc{AugelFischerGollhoferetal., author = {Augel, Lion and Fischer, Inga Anita and Gollhofer, Martin and Oehme, Michael and Schulze, J{\"o}rg}, title = {Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas}, series = {Journal of Applied Physics}, volume = {128}, journal = {Journal of Applied Physics}, number = {1}, issn = {1089-7550}, doi = {10.1063/5.0012279}, pages = {013105-1 -- 013105-8}, language = {en} } @misc{WeisshauptFunkKernetal., author = {Weißhaupt, David and Funk, Hannes S. and Kern, Michal and Dettling, Marco M. and Schwarz, Daniel and Oehme, Michael and S{\"u}rgers, Christoph and Slageren, Joris van and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8\% Sn}, series = {Journal of Physics: Condensed Matter}, volume = {33}, journal = {Journal of Physics: Condensed Matter}, number = {8}, issn = {1361-648X}, doi = {10.1088/1361-648X/abcb68}, pages = {8}, language = {en} } @misc{BergmannAyasseSchlipfetal., author = {Bergmann, Fritz and Ayasse, Markus and Schlipf, Jon and M{\"o}rz, Florian and Weißhaupt, David and Oehme, Michael and Prucnal, Slawomir and Kawaguchi, Yuma and Schwarz, Daniel and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Plasmonic gratings from highly doped Ge1-ySny films on Si}, series = {Journal of Physics D: Applied Physics}, volume = {54}, journal = {Journal of Physics D: Applied Physics}, number = {44}, issn = {1361-6463}, language = {en} } @misc{WeisshauptFunkSuergersetal., author = {Weißhaupt, David and Funk, Hannes S. and S{\"u}rgers, Christoph and Fischer, Gerda and Oehme, Michael and Schwarz, Daniel and Fischer, Inga Anita and Slageren, Joris van and Schulze, J{\"o}rg}, title = {Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics}, series = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021}, journal = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021}, publisher = {Piscataway}, address = {IEEE}, isbn = {978-1-6654-4761-4}, issn = {978-953-233-101-1}, doi = {10.23919/MIPRO52101.2021.9596924.}, pages = {45 -- 49}, language = {en} } @misc{SteuerSchwarzOehmeetal., author = {Steuer, Oliver and Schwarz, Daniel and Oehme, Michael and Schulze, J. and Maczko, H. and Kudrawiec, Robert and Fischer, Inga Anita and Heller, R. and H{\"u}bner, R. and Khan, M. M. and Georgiev, Yordan M. and Zhou, Shengqiang and Helm, M. and Prucnal, Slawomir}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, series = {Journal of Physics: Condensed Matter}, volume = {35}, journal = {Journal of Physics: Condensed Matter}, number = {5}, issn = {1361-648X}, doi = {10.1088/1361-648X/aca3ea}, language = {en} } @misc{WeisshauptSuergersBloosetal., author = {Weißhaupt, David and S{\"u}rgers, Christoph and Bloos, Dominik and Funk, Hannes Simon and Oehme, Michael and Fischer, Gerda and Schubert, Markus Andreas and Wenger, Christian and van Slageren, Joris and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas}, series = {Semiconductor Science and Technology}, volume = {39}, journal = {Semiconductor Science and Technology}, number = {12}, publisher = {IOP Publishing}, issn = {0268-1242}, doi = {10.1088/1361-6641/ad8d06}, pages = {1 -- 10}, abstract = {Abstract Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.}, language = {en} } @misc{WeisshauptFunkOehmeetal., author = {Weißhaupt, David and Funk, Hannes S. and Oehme, Michael and Bloos, Dominik and Berkmann, Fritz and Seidel, Lukas and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {High mobility Ge 2DHG based MODFETs for low-temperature applications}, series = {Semiconductor Science and Technology}, volume = {38}, journal = {Semiconductor Science and Technology}, number = {3}, issn = {1361-6641}, doi = {10.1088/1361-6641/acb22f}, language = {en} }