@misc{KoernerSchwarzFischeretal., author = {K{\"o}rner, Roman and Schwarz, Daniel and Fischer, Inga Anita and Augel, Lion and Bechler, Stefan and H{\"a}nel, Linda A. and Kern, Michael and Oehme, Michael and Rolseth, Erlend Granbo and Schwartz, Bernhard and Weißhaupt, David and Zhang, Wogong and Schulze, J{\"o}rg}, title = {The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si}, series = {2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016}, journal = {2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-3901-2}, pages = {22.5.1 -- 22.5.4}, language = {en} } @misc{FunkKernWeisshauptetal., author = {Funk, Hannes S. and Kern, Michael and Weisshaupt, David and S{\"u}rgers, Christoph and Fischer, Inga Anita and Oehme, Michael and Slageren, Joris van and Schulze, J{\"o}rg}, title = {Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content}, series = {ECS Transactions}, volume = {93}, journal = {ECS Transactions}, number = {1}, issn = {1938-5862}, doi = {10.1149/09301.0101ecst}, pages = {101 -- 104}, language = {en} } @misc{FunkKernWeisshauptetal., author = {Funk, Hannes S. and Kern, Michael and Weißhaupt, David and S{\"u}rgers, Christoph and Fischer, Inga Anita and Oehme, Michael and Slageren, Joris van and Schulze, J{\"o}rg}, title = {Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers}, series = {Journal of Magnetism and Magnetic Materials}, volume = {546}, journal = {Journal of Magnetism and Magnetic Materials}, issn = {0304-8853}, doi = {10.1016/j.jmmm.2021.168731.}, pages = {8}, language = {en} } @misc{SchwartzKlossekKittleretal., author = {Schwartz, Bernhard and Klossek, Andre and Kittler, Martin and Oehme, Michael and Kasper, Erich and Schulze, J{\"o}rg}, title = {Electroluminescence of Germanium-LEDs on Silicon}, series = {Physica Status Solidi C}, volume = {11}, journal = {Physica Status Solidi C}, number = {11-12}, doi = {10.1002/pssc.201400056}, pages = {1686 -- 1691}, language = {en} } @inproceedings{ArguirovKittlerOehmeetal., author = {Arguirov, Tzanimir V. and Kittler, Martin and Oehme, Michael and Abrosimov, Nikolay V. and Vyvenko, Oleg F. and Kasper, Erich and Schulze, J{\"o}rg}, title = {Luminescence from Germanium and Germanium on Silicon}, series = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, booktitle = {Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK}, publisher = {Trans Tech Publ.}, address = {Durnten-Zurich [u.a.]}, issn = {1662-9779}, doi = {10.4028/www.scientific.net/SSP.205-206.383}, pages = {383 -- 393}, language = {en} } @misc{OehmeKosteckiArguirovetal., author = {Oehme, Michael and Kostecki, Konrad and Arguirov, Tzanimir V. and Mussler, Gregor and Ye, Kaiheng and Gollhofer, Martin and Schmid, Marc and Kaschel, Mathias and K{\"o}rner, Roman and Kittler, Martin and Buca, Dan and Kasper, Erich and Schulze, J{\"o}rg}, title = {GeSn Heterojunction LEDs on Si Substrates}, series = {IEEE Photonics Technology Letters}, volume = {26}, journal = {IEEE Photonics Technology Letters}, number = {2}, issn = {1041-1135}, doi = {10.1109/LPT.2013.2291571}, pages = {187 -- 189}, language = {en} } @misc{OehmeWidmannKosteckietal., author = {Oehme, Michael and Widmann, Daniel and Kostecki, Konrad and Zaumseil, Peter and Schwartz, Bernhard and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Kittler, Martin and Kasper, Erich and Schulze, J{\"o}rg}, title = {GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates}, series = {Optics Letters}, volume = {39}, journal = {Optics Letters}, number = {16}, issn = {1539-4794}, doi = {10.1364/OL.39.004711}, pages = {4711 -- 4714}, language = {en} } @misc{SchwartzArguirovKittleretal., author = {Schwartz, Bernhard and Arguirov, Tzanimir V. and Kittler, Martin and Oehme, Michael and Kostecki, Konrad and Kasper, Erich and Schulze, J{\"o}rg}, title = {Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers}, series = {Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States}, journal = {Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States}, publisher = {International Society for Optics and Photonics}, doi = {10.1117/12.2080816}, language = {en} } @misc{SchwartzOehmeKosteckietal., author = {Schwartz, Bernhard and Oehme, Michael and Kostecki, Konrad and Widmann, Daniel and Gollhofer, Martin and K{\"o}rner, Roman and Bechler, Stefan and Fischer, Inga Anita and Wendav, Torsten and Kasper, Erich and Schulze, J{\"o}rg and Kittler, Martin}, title = {Electroluminescence of GeSn/Ge MQW LEDs on Si substrate}, series = {Optics Letters}, volume = {40}, journal = {Optics Letters}, number = {13}, doi = {10.1364/OL40.003209}, pages = {3209 -- 3212}, language = {en} } @misc{SchwartzSaringArguirovetal., author = {Schwartz, Bernhard and Saring, Philipp and Arguirov, Tzanimir V. and Oehme, Michael and Kostecki, Konrad and Kasper, Erich and Schulze, J. and Kittler, Martin}, title = {Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1012-0394}, doi = {10.4028/www.scientific.net/SSP.242.361}, pages = {361 -- 367}, language = {en} } @misc{OehmeGollhoferKosteckietal., author = {Oehme, Michael and Gollhofer, Martin and Kostecki, Konrad and K{\"o}rner, Roman and Bechler, Stefan and Widmann, Daniel and Aguirov, Tzanimir and Kittler, Martin and Schulze, J{\"o}rg}, title = {Ge and GeSn Light Emitters on Si}, series = {Solid State Phenomena}, volume = {242}, journal = {Solid State Phenomena}, issn = {1012-0394}, doi = {10.4028/www.scientific.net/SSP.242.353}, pages = {353 -- 360}, language = {en} } @inproceedings{SchwartzOehmeKoerneretal., author = {Schwartz, Bernhard and Oehme, Michael and K{\"o}rner, Roman and Bechler, Stefan and Schulze, J{\"o}rg and Kittler, Martin}, title = {Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)}, series = {Silicon Photonics XII, 30 January-1 February 2017, San Francisco, California, United States}, booktitle = {Silicon Photonics XII, 30 January-1 February 2017, San Francisco, California, United States}, publisher = {SPIE}, address = {Bellingham, Washington}, isbn = {978-1-5106-0657-9}, doi = {10.1117/12.2249564}, pages = {7}, language = {en} } @misc{AugelFischerGollhoferetal., author = {Augel, Lion and Fischer, Inga Anita and Gollhofer, Martin and Oehme, Michael and Schulze, J{\"o}rg}, title = {Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas}, series = {Journal of Applied Physics}, volume = {128}, journal = {Journal of Applied Physics}, number = {1}, issn = {1089-7550}, doi = {10.1063/5.0012279}, pages = {013105-1 -- 013105-8}, language = {en} } @misc{WeisshauptFunkKernetal., author = {Weißhaupt, David and Funk, Hannes S. and Kern, Michal and Dettling, Marco M. and Schwarz, Daniel and Oehme, Michael and S{\"u}rgers, Christoph and Slageren, Joris van and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8\% Sn}, series = {Journal of Physics: Condensed Matter}, volume = {33}, journal = {Journal of Physics: Condensed Matter}, number = {8}, issn = {1361-648X}, doi = {10.1088/1361-648X/abcb68}, pages = {8}, language = {en} } @misc{BergmannAyasseSchlipfetal., author = {Bergmann, Fritz and Ayasse, Markus and Schlipf, Jon and M{\"o}rz, Florian and Weißhaupt, David and Oehme, Michael and Prucnal, Slawomir and Kawaguchi, Yuma and Schwarz, Daniel and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Plasmonic gratings from highly doped Ge1-ySny films on Si}, series = {Journal of Physics D: Applied Physics}, volume = {54}, journal = {Journal of Physics D: Applied Physics}, number = {44}, issn = {1361-6463}, language = {en} } @misc{WeisshauptFunkSuergersetal., author = {Weißhaupt, David and Funk, Hannes S. and S{\"u}rgers, Christoph and Fischer, Gerda and Oehme, Michael and Schwarz, Daniel and Fischer, Inga Anita and Slageren, Joris van and Schulze, J{\"o}rg}, title = {Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics}, series = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021}, journal = {44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021}, publisher = {Piscataway}, address = {IEEE}, isbn = {978-1-6654-4761-4}, issn = {978-953-233-101-1}, doi = {10.23919/MIPRO52101.2021.9596924.}, pages = {45 -- 49}, language = {en} } @misc{SteuerSchwarzOehmeetal., author = {Steuer, Oliver and Schwarz, Daniel and Oehme, Michael and Schulze, J. and Maczko, H. and Kudrawiec, Robert and Fischer, Inga Anita and Heller, R. and H{\"u}bner, R. and Khan, M. M. and Georgiev, Yordan M. and Zhou, Shengqiang and Helm, M. and Prucnal, Slawomir}, title = {Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting}, series = {Journal of Physics: Condensed Matter}, volume = {35}, journal = {Journal of Physics: Condensed Matter}, number = {5}, issn = {1361-648X}, doi = {10.1088/1361-648X/aca3ea}, language = {en} } @misc{WeisshauptSuergersBloosetal., author = {Weißhaupt, David and S{\"u}rgers, Christoph and Bloos, Dominik and Funk, Hannes Simon and Oehme, Michael and Fischer, Gerda and Schubert, Markus Andreas and Wenger, Christian and van Slageren, Joris and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas}, series = {Semiconductor Science and Technology}, volume = {39}, journal = {Semiconductor Science and Technology}, number = {12}, publisher = {IOP Publishing}, issn = {0268-1242}, doi = {10.1088/1361-6641/ad8d06}, pages = {1 -- 10}, abstract = {Abstract Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.}, language = {en} } @misc{WeisshauptFunkOehmeetal., author = {Weißhaupt, David and Funk, Hannes S. and Oehme, Michael and Bloos, Dominik and Berkmann, Fritz and Seidel, Lukas and Fischer, Inga Anita and Schulze, J{\"o}rg}, title = {High mobility Ge 2DHG based MODFETs for low-temperature applications}, series = {Semiconductor Science and Technology}, volume = {38}, journal = {Semiconductor Science and Technology}, number = {3}, issn = {1361-6641}, doi = {10.1088/1361-6641/acb22f}, language = {en} }