@misc{RudolphHeymannBoss, author = {Rudolph, Matthias and Heymann, Peter and Boss, Hermann}, title = {Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods}, doi = {http://dx.doi.org/10.1109/MMM.2010.937715}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Noise modeling of GaAs HBTs}, abstract = {Institutskolloquium, IHP Frankfurt (Oder), 2010}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {Highly Robust GaN-Based Low-noise Amplifiers}, abstract = {Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, Darmstadt, 2010}, language = {en} } @book{Rudolph, author = {Rudolph, Matthias}, title = {Introduction to Modeling HBTs}, publisher = {Artech House}, address = {Boston, Mass.}, isbn = {1-58053-144-X}, language = {en} } @misc{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann}, isbn = {3-86537-328-3}, language = {en} } @book{Rudolph, author = {Rudolph, Matthias}, title = {Selected Topics on Microwave Measurements, Noise in Devices and Großsignalmodell f{\"u}r GaAs Hetero-Bipolar-Transistoren f{\"u}rLeistungsanwendungen in der Mobilkommunikation}, isbn = {3-89825-392-9}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Direct Extraction of HBT Equivalent Circuit Elements}, language = {en} } @article{RudolphRheinfelderBeisswangeretal., author = {Rudolph, Matthias and Rheinfelder, C. N. and Beißwanger, F. and Heinrich, Wolfgang}, title = {Nonlinear Modeling of SiGe HBTs up to 50 GHz}, language = {en} } @misc{RudolphAchoucheKrausetal., author = {Rudolph, Matthias and Achouche, M. and Kraus, S. and Spitzbart, Th. and Kurpas, Paul and Rentner, D. and Brunner, F. and Richter, E. and Bergunde, T. and Heymann, Peter and Wolter, P. and Wittrich, H. and Weyers, M. and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InGaP/GaAs Power HBTs for L-Band Applications}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency}, series = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, booktitle = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {0-7803-5135-5}, pages = {741 -- 744}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {On the Gunn Effect in GaAs HBTs}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Lenk, Friedrich}, title = {Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, pages = {1967 -- 1970}, language = {en} } @inproceedings{LenkRudolph, author = {Lenk, Friedrich and Rudolph, Matthias}, title = {New Extraction Algorithm for GaAs-HBTs With Low Intrinsic Base Resistance}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {725 -- 728}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {997 -- 1000}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator}, language = {en} } @article{RudolphSchniederHeinrich, author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang}, title = {Modeling Emitter Breakdown in GaAs-Based HBTs}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs}, language = {en} } @misc{RudolphLenkLlopisetal., author = {Rudolph, Matthias and Lenk, Friedrich and Llopis, O. and Heinrich, Wolfgang}, title = {On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs}, series = {IEEE transactions on microwave theory and techniques}, volume = {54}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, pages = {2954 -- 2961}, language = {en} } @article{RudolphMeliani, author = {Rudolph, Matthias and Meliani, Chafik}, title = {On the Correlation between Eye-Diagram and Frequency Characteristics of GaAs-HBT TWAsfor 20 and 40 Gbps NRZ Signals}, language = {en} } @article{RudolphBehtashDoerneretal., author = {Rudolph, Matthias and Behtash, Reza and D{\"o}rner, Ralf and Hirche, Klaus and Wurfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Analysis of the Survivability of GaN Low-Noise Amplifiers}, language = {en} } @article{RudolphKorndoerferHeymannetal., author = {Rudolph, Matthias and Kornd{\"o}rfer, Falk and Heymann, Peter and Heinrich, Wolfgang}, title = {Compact Large-Signal Shot-Noise Model for HBTs}, language = {en} } @article{RudolphMelianiDoerneretal., author = {Rudolph, Matthias and Meliani, Chafik and D{\"o}rner, Ralf and Heinrich, Wolfgang}, title = {Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio}, language = {en} } @article{RudolphKhalilLieroetal., author = {Rudolph, Matthias and Khalil, I. and Liero, Armin and Lossy, Richard and Heinrich, Wolfgang}, title = {GaN HEMT Potential for Low Noise Highly Linear RF Applications}, language = {en} } @misc{RudolphBonani, author = {Rudolph, Matthias and Bonani, Fabrizio}, title = {Low-Frequency Noise in Nonlinear Systems: Its Impact on RF Performance and Implicationsfor Device Modeling and Circuit Simulation}, language = {en} } @misc{RudolphChaturvediHircheetal., author = {Rudolph, Matthias and Chaturvedi, Nidhi and Hirche, Klaus and Wurfl, K. and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Rugged 30 GHz GaN Low-Noise Amplifiers}, language = {en} } @misc{RudolphKraemerSchmueckleetal., author = {Rudolph, Matthias and Kraemer, Tomas and Schm{\"u}ckle, Franz-Josef and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz}, language = {en} } @article{RudolphTischlerKilketal., author = {Rudolph, Matthias and Tischler, Th. and Kilk, A. and Heinrich, Wolfgang}, title = {Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour}, language = {en} } @article{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Large-Signal Modeling of High-Voltage GaAs Power HBTs}, language = {en} } @article{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study}, language = {en} } @article{RudolphBehtashHircheetal., author = {Rudolph, Matthias and Behtash, Reza and Hirche, Klaus and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier}, language = {en} } @misc{RudolphMelianiKurpasetal., author = {Rudolph, Matthias and Meliani, Chafik and Kurpas, Paul and Schmidt, L. and Rheinfelder, C. N. and Heinrich, Wolfgang}, title = {A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65\% PAE}, language = {en} } @article{RudolphHeymann, author = {Rudolph, Matthias and Heymann, Peter}, title = {On Compact HBT RF Noise Modeling}, language = {en} } @article{Rudolph, author = {Rudolph, Matthias}, title = {Limitations of Current Compact Transit-Time Models for III-V-Based HBTs}, language = {en} } @misc{RudolphDewitzLieroetal., author = {Rudolph, Matthias and Dewitz, Mike and Liero, Armin and Khalil, I. and Chaturvedi, Nidhi and Wipf, Christian and Bertenburg, R. M. and Miller, J. and W{\"u}rfl, Joachim and Heinrich, Wolfgang and Tr{\"a}nkle, G{\"u}nther}, title = {Highly Robust X-Band LNA with Extremely Short Recovery Time}, language = {en} } @inproceedings{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter}, title = {New Algorithm for Extraction of FET Noise Model Parameters}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {New GaInP/GaAs-HBT Large-Signal Model for Power Applications}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Richter, E.}, title = {Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {A Universal Measurement System for Microwave Power Transistors}, language = {en} } @inproceedings{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer}, language = {en} } @inproceedings{RudolphKurpasBrunneretal., author = {Rudolph, Matthias and Kurpas, Paul and Brunner, F. and Doser, W. and Maaßdorf, Andre and D{\"o}rner, Ralf and Blanck, H. and Heinrich, Wolfgang and W{\"u}rfl, Joachim}, title = {Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions}, language = {en} } @inproceedings{RudolphSchniederHeinrichetal., author = {Rudolph, Matthias and Schnieder, Frank and Heinrich, Wolfgang and Schnieder, Frank}, title = {Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs}, language = {en} } @article{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter}, title = {An HBT Noise Model Valid up to Transit Frequency}, language = {en} } @article{RudolphDoernerKlapprothetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Klapproth, L. and Heymann, Peter and Prinzler, H. and B{\"o}ck, Georg}, title = {Experimental Evaluation of Microwave Field-EffectTransistor Noise Models}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Harmonic Tuning of Power Transistors by Active Load-Pull Measurement}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Beilenhoff, K.}, title = {Scalable GaInP/GaAs HBT Large-Signal Model}, language = {en} } @article{RudolphDoernerHeymann, author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter}, title = {Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers}, language = {en} } @misc{RudolphWuerflKurpasetal., author = {Rudolph, Matthias and W{\"u}rfl, Joachim and Kurpas, Paul and Brunner, F. and Mai, M.}, title = {Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, R. and Klapproth, L. and B{\"o}ck, Georg}, title = {Direct Extraction of FET Noise Models from Noise Figure Measurements}, language = {en} } @article{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, R. and Beilenhoff, K.}, title = {Unified Model for Collector Charge in Heterojunction Bipolar Transistors}, language = {en} } @article{RudolphSheinmanWasigeetal., author = {Rudolph, Matthias and Sheinman, B. and Wasige, E. and D{\"o}rner, Ralf and Sidorov, V. and Cohen, S. and Ritter, Dan}, title = {A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit}, language = {en} } @article{Rudolph, author = {Rudolph, Matthias}, title = {Uniqueness Problems in Compact HBT Models Caused by Thermal Effects}, language = {en} } @inproceedings{RudolphHeymann, author = {Rudolph, Matthias and Heymann, Peter}, title = {The Influence of Microwave Two-Port Noise on Residual Phase Noise in GaAs-HBTs}, language = {en} } @inproceedings{RudolphMelianiHilsenbecketal., author = {Rudolph, Matthias and Meliani, Chafik and Hilsenbeck, Jochen and Heinrich, Wolfgang and Meliani, Chafik}, title = {A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Key Issues of Compact Models for GaAs Heterojunction Bipolar Transistors}, language = {en} } @inproceedings{RudolphMelianiHeinrich, author = {Rudolph, Matthias and Meliani, Chafik and Heinrich, Wolfgang}, title = {On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs}, language = {en} } @article{RudolphBeilenhoffDoerneretal., author = {Rudolph, Matthias and Beilenhoff, K. and D{\"o}rner, Ralf and Heymann, Peter}, title = {Scalable GaInP/GaAs HBT Large-Signal Model}, language = {en} } @inproceedings{LenkDoernerRumiantsevetal., author = {Lenk, Friedrich and D{\"o}rner, Ralf and Rumiantsev, Andrej and Rudolph, Matthias}, title = {Calibration Residual Error Propagation Analysis Using Conformal Mapping}, series = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, booktitle = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {978-1-61284-959-1}, pages = {Paper 2-4}, language = {en} } @incollection{RudolphEngelmannSchmueckle, author = {Rudolph, Matthias and Engelmann, Jens and Schm{\"u}ckle, Franz-Josef}, title = {Large and packaged Transistors}, series = {Nonlinear Transistor Model Parameter Extraction Techniques}, booktitle = {Nonlinear Transistor Model Parameter Extraction Techniques}, editor = {Rudolph, Matthias and Root, David E. and Fager, Christian}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {171 -- 205}, language = {en} } @inproceedings{RudolphSchniederSchmueckleetal., author = {Rudolph, Matthias and Schnieder, Frank and Schm{\"u}ckle, Franz-Josef and Heinrich, Wolfgang}, title = {An Analysis of Source Connections in GaN Power Transistor Packages}, series = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, booktitle = {Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany}, address = {Ilmenau}, isbn = {978-3-9812668-4-9}, pages = {4}, language = {en} } @incollection{Rudolph, author = {Rudolph, Matthias}, title = {Introduction}, series = {Nonlinear transistor model parameter extraction techniques}, booktitle = {Nonlinear transistor model parameter extraction techniques}, editor = {Rudolph, Matthias and Fager, Christian and Root, David E.}, publisher = {Cambridge University Press}, address = {Cambridge}, isbn = {978-0-521-76210-6}, pages = {1 -- 17}, language = {en} } @book{RohdeRudolph, author = {Rohde, Ulrich L. and Rudolph, Matthias}, title = {RF/Microwave Circuit Design for Wireless Applications}, edition = {2. ed.}, publisher = {Wiley}, address = {Hoboken, NJ}, isbn = {978-0-470-90181-6}, pages = {XIX, 893}, language = {en} } @inproceedings{RudolphDoernerNgnintedemetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Ngnintedem, Eric and Heinrich, Wolfgang}, title = {Noise Modeling of GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2302-4}, pages = {159 -- 162}, language = {en} } @inproceedings{AndreiDoernerBengtssonetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Bengtsson, Olof and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Highly Linear X-Band GaN-Based Low-Noise Amplifier}, series = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, booktitle = {Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-4454-8}, language = {en} } @misc{SchniederRudolph, author = {Schnieder, Frank and Rudolph, Matthias}, title = {Thermal Coupling in AlGaN/GaN Power Transistors}, series = {Frequenz}, volume = {67}, journal = {Frequenz}, number = {1-2}, issn = {2191-6349}, doi = {10.1515/freq-2012-0031}, pages = {21 -- 26}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications}, series = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, journal = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-032-3}, pages = {280 -- 283}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Towards a Large-Signal Noise Model for GaN HEMT Devices}, series = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, booktitle = {Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6-8 October 2013 Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, pages = {484 -- 487}, language = {en} } @misc{SchniederBengtssonSchmueckleetal., author = {Schnieder, Frank and Bengtsson, Olof and Schm{\"u}ckle, Franz-Josef and Rudolph, Matthias and Heinrich, Wolfgang}, title = {Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description}, series = {IEEE transactions on microwave theory and techniques}, volume = {61}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, doi = {10.1109/TMTT.2013.2261089}, pages = {2603 -- 2609}, language = {en} } @inproceedings{RudolphDoerner, author = {Rudolph, Matthias and D{\"o}rner, Ralf}, title = {Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices}, series = {GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany}, booktitle = {GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany}, publisher = {VDE-Verl.}, address = {Berlin [u.a.]}, isbn = {978-3-8007-3585-3}, pages = {4}, language = {en} } @misc{JohansenRudolphJensenetal., author = {Johansen, Tom K. and Rudolph, Matthias and Jensen, Thomas and Kraemer, Tomas and Weimann, Nils and Schnieder, Frank and Krozer, Viktor and Heinrich, Wolfgang}, title = {Small- and large-signal modeling of InP HBTs in transferred-substrate technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {6}, journal = {International Journal of Microwave and Wireless Technologies}, number = {3-4}, doi = {10.1017/S1759078714000051}, pages = {243 -- 251}, language = {en} } @inproceedings{KoloskaWolffRudolph, author = {Koloska, Uwe and Wolff, Matthias and Rudolph, Torsten}, title = {Ein Werkzeug zur automatischen Inventargenerierung}, series = {Elektronische Sprachsignalverarbeitung, Tagungsband der zehnten Konferenz, G{\"o}rlitz, 20. bis 22. September 1999}, booktitle = {Elektronische Sprachsignalverarbeitung, Tagungsband der zehnten Konferenz, G{\"o}rlitz, 20. bis 22. September 1999}, editor = {Mehnert, Dieter}, publisher = {w.e.b. Universit{\"a}tsverlag}, address = {Dresden}, isbn = {3-933592-64-X}, pages = {160 -- 165}, language = {de} } @inproceedings{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {GaN HEMT Noise Model Performance under Nonlinear Operation}, series = {Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC)}, booktitle = {Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC)}, publisher = {IEEE}, doi = {10.1109/EuMIC.2014.6997895}, pages = {472 -- 475}, language = {en} } @inproceedings{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {GaN HEMT Noise Model Performance under Nonlinear Operation}, series = {Proceedings, 44th European Microwave Conference}, booktitle = {Proceedings, 44th European Microwave Conference}, publisher = {IEEE}, isbn = {978-2-87487-035-4}, doi = {10.1109/EuMC.2014.6986711}, pages = {1416 -- 1419}, language = {en} } @misc{AptePoddarRudolphetal., author = {Apte, Anisha M. and Poddar, Ajay K. and Rudolph, Matthias and Rohde, Ulrich L.}, title = {A Novel Low Phase Noise X-Band Oscillator}, series = {IEEE Microwave Magazine}, volume = {16}, journal = {IEEE Microwave Magazine}, number = {1}, issn = {1527-3342}, doi = {10.1109/MMM.2014.2367957}, pages = {127 -- 135}, language = {en} } @misc{RudolphEscotteDoerner, author = {Rudolph, Matthias and Escotte, Laurent and D{\"o}rner, Ralf}, title = {Modeling Nonlinear White Noise in GaN HEMT Devices}, series = {Frequenz}, volume = {69}, journal = {Frequenz}, number = {1-2}, pages = {47 -- 55}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive}, series = {Proceedings of 45th European Microwave Conference, Paris 2015}, booktitle = {Proceedings of 45th European Microwave Conference, Paris 2015}, publisher = {IEEE}, doi = {10.1109/EuMC.2015.7345742}, pages = {231 -- 234}, language = {en} } @misc{NosaevaWeimannRudolphetal., author = {Nosaeva, Ksenia and Weimann, Nils and Rudolph, Matthias and John, Wilfred and Kr{\"u}ger, Olaf and Heinrich, Wolfgang}, title = {Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer}, series = {Electronics Letters}, volume = {51}, journal = {Electronics Letters}, number = {13}, issn = {1350-911X}, doi = {10.1049/el.2015.1135}, pages = {1010 -- 1012}, language = {en} } @misc{NosaevaWeimannRudolphetal., author = {Nosaeva, Ksenia and Weimann, Nils and Rudolph, Matthias and John, Wilfred and Kr{\"u}ger, Olaf and Heinrich, Wolfgang}, title = {Thin ice: Diamond films could more than double the power output achievable with transistors in the 'Terahertz gap' by improving thermal management}, series = {Electronics Letters}, volume = {51}, journal = {Electronics Letters}, number = {13}, issn = {1350-911X}, doi = {10.1049/el.2015.1943}, pages = {S. 959}, language = {en} } @inproceedings{AndreiBengtssonDoerneretal., author = {Andrei, Cristina and Bengtsson, Olof and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications}, series = {IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015}, publisher = {IEEE}, doi = {10.1109/MWSYM.2015.7166766}, pages = {4}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany}, booktitle = {2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-7-0}, doi = {10.1109/GEMIC.2016.7461650}, pages = {441 -- 444}, language = {en} } @misc{NosaevaAlSawafJohnetal., author = {Nosaeva, Ksenia and Al-Sawaf, Thualfiqa and John, Wilfred and Stoppel, Dimitri and Rudolph, Matthias and Schm{\"u}ckle, Franz-Josef and Janke, Bernd and Kr{\"u}ger, Olaf and Krozer, Viktor and Heinrich, Wolfgang and Weimann, Nils}, title = {Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer}, series = {IEEE Transactions on Electron Devices}, volume = {63}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2016.2533669}, pages = {1846 -- 1852}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, booktitle = {2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-044-6}, doi = {10.1109/EuMIC.2016.7777514}, pages = {157 -- 160}, language = {en} } @inproceedings{Rudolph, author = {Rudolph, Matthias}, title = {GaN HEMTs for low-noise amplification — status and challenges}, series = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, booktitle = {Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-5862-4}, doi = {10.1109/INMMIC.2017.7927327}, pages = {4}, language = {en} } @misc{ApteRohdePoddaretal., author = {Apte, Anisha M. and Rohde, Ulrich L. and Poddar, Ajay K. and Rudolph, Matthias}, title = {Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator}, series = {IEEE Microwave Magazine}, volume = {18}, journal = {IEEE Microwave Magazine}, number = {4}, issn = {1527-3342}, doi = {10.1109/MMM.2017.2679998}, pages = {108 -- 123}, language = {en} } @inproceedings{RudolphAndreiDoerneretal., author = {Rudolph, Matthias and Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang}, title = {Noise in GaN HEMTs and Circuits}, series = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, booktitle = {24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-2760-6}, doi = {10.1109/ICNF.2017.7985978}, pages = {1 -- 4}, language = {en} } @inproceedings{BonaniRudolph, author = {Bonani, Fabrizio and Rudolph, Matthias}, title = {Simulating Noise in Nonlinear Circuits}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization}, language = {en} } @inproceedings{LuoBengtssonRudolph, author = {Luo, Peng and Bengtsson, Olof and Rudolph, Matthias}, title = {A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements}, series = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, booktitle = {IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5090-6360-4}, doi = {10.1109/MWSYM.2017.8059085}, pages = {240 -- 243}, language = {en} } @inproceedings{AndreiDoernerChevtchenkoetal., author = {Andrei, Cristina and D{\"o}rner, Ralf and Chevtchenko, Serguei A. and Heinrich, Wolfgang and Rudolph, Matthias}, title = {On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design}, series = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, booktitle = {12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-2-87487-048-4}, doi = {10.23919/EuMIC.2017.8230705}, pages = {244 -- 247}, language = {en} } @inproceedings{KauleDoernerWeimannetal., author = {Kaule, Evelyne and D{\"o}rner, Ralf and Weimann, Nils and Rudolph, Matthias}, title = {Noise modeling of transferred-substrate InP-DHBTs}, series = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, booktitle = {IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-3169-0}, doi = {10.1109/COMCAS.2017.8244768}, pages = {1 -- 4}, language = {en} } @inproceedings{NasserRitterRudolph, author = {Nasser, Caram and Ritter, Dan and Rudolph, Matthias}, title = {Bias dependence of the access resistance in GaN HEMTs}, series = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, booktitle = {2018 22nd International Microwave and Radar Conference (MIKON), Pozn{\´a}n, May 14-17, 2018, Poland}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-83-949421-1-3}, doi = {10.23919/MIKON.2018.8405197}, pages = {271 -- 273}, language = {en} } @inproceedings{LuoSchniederRudolph, author = {Luo, Peng and Schnieder, Frank and Rudolph, Matthias}, title = {Chalmers GaN HEMT charge model revisited}, series = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, booktitle = {German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-3-9812668-8-7}, doi = {10.23919/GEMIC.2018.8335055}, pages = {164 -- 167}, language = {en} } @inproceedings{LuoSchniederBengtssonetal., author = {Luo, Peng and Schnieder, Frank and Bengtsson, Olof and Heinrich, Wolfgang and Rudolph, Matthias}, title = {Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs}, series = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, booktitle = {IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-5386-5067-7}, doi = {10.1109/MWSYM.2018.8439389}, pages = {728 -- 731}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {14th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {14th European Microwave Integrated Circuits Conference (EuMIC)}, address = {Paris, France}, isbn = {978-2-87487-056-9}, doi = {10.23919/EuMIC.2019.8909653}, pages = {240 -- 242}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected.}, language = {en} } @misc{KauleAndreiGerlichetal., author = {Kaule, Evelyne and Andrei, Cristina and Gerlich, Stefan and D{\"o}rner, Ralf and Rudolph, Matthias}, title = {Limiting the Output Power of Rugged GaN LNAs}, series = {Proceedings of 49th European Microwave Conference (EuMC)}, journal = {Proceedings of 49th European Microwave Conference (EuMC)}, address = {Paris, France}, isbn = {978-2-87487-055-2}, doi = {10.23919/EuMC.2019.8910675}, pages = {794 -- 796}, abstract = {Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected.}, language = {en} } @misc{NasserLuoSchniederetal., author = {Nasser, Caram and Luo, Peng and Schnieder, Frank and Rudolph, Matthias and Ritter, Dan}, title = {Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment}, series = {IEEE Transactions on Electron Devices}, volume = {66}, journal = {IEEE Transactions on Electron Devices}, number = {5}, issn = {0018-9383}, doi = {10.1109/TED.2019.2907484}, pages = {2146 -- 2150}, language = {en} } @misc{GriebelRudolphRohde, author = {Griebel, Wolfgang and Rudolph, Matthias and Rohde, Ulrich L.}, title = {Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon}, series = {IETE Journal of Research}, journal = {IETE Journal of Research}, issn = {0974-780X}, doi = {10.1080/03772063.2020.1847702}, pages = {1 -- 11}, language = {en} } @misc{AndreiRudolph, author = {Andrei, Cristina and Rudolph, Matthias}, title = {Properties of GaN LNAs for Front-End Applications}, series = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, journal = {WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019}, language = {en} } @misc{LeHuynhWangetal., author = {Le, Quang Huy and Huynh, Dang Khoa and Wang, Defu and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology}, series = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, journal = {Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-7281-3517-5}, doi = {10.1109/APMC46564.2019.9038620}, pages = {222 -- 224}, language = {en} } @misc{ShivanKauleHossainetal., author = {Shivan, T. and Kaule, Evelyne and Hossain, M. and D{\"o}rner, Ralf and Johansen, Tom K. and Stoppel, Dimitri and Boppel, S. and Heinrich, Wolfgang and Krozer, Viktor and Rudolph, Matthias}, title = {Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology}, series = {International Journal of Microwave and Wireless Technologies}, volume = {11}, journal = {International Journal of Microwave and Wireless Technologies}, number = {7}, issn = {1759-0795}, doi = {10.1017/S1759078719000515}, pages = {635 -- 644}, language = {en} }