@misc{BeleniotisKrauseZervosetal., author = {Beleniotis, Petros and Krause, Sascha and Zervos, Christos and Rudolph, Matthias}, title = {A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs}, series = {IEEE Transactions on Electron Devices}, volume = {71}, journal = {IEEE Transactions on Electron Devices}, number = {7}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3397234}, pages = {4058 -- 4065}, language = {en} } @misc{BeleniotisZervosKrauseetal., author = {Beleniotis, Petros and Zervos, Christos and Krause, Sascha and Chevtchenko, Serguei and Ritter, Dan and Rudolph, Matthias}, title = {Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD-compact model approach}, series = {IEEE Transactions on Electron Devices}, volume = {71 (2024)}, journal = {IEEE Transactions on Electron Devices}, number = {6}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, issn = {0018-9383}, doi = {10.1109/TED.2024.3388386}, pages = {3582 -- 3589}, language = {en} } @misc{YazdaniZervosBeleniotisetal., author = {Yazdani, Hossein and Zervos, Christos and Beleniotis, Petros and Brusaterra, Enrico and Hilt, Oliver and Rudolph, Matthias and W{\"u}rfl, Joachim}, title = {Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps-Induced Drain Lag}, series = {Physica Status Solidi (a)}, journal = {Physica Status Solidi (a)}, publisher = {Wiley}, issn = {1862-6300}, doi = {10.1002/pssa.202300885}, pages = {1 -- 8}, abstract = {Drain lag is a well-known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high-electron-mobility transistors. Herein, it is demonstrated that a reduction of the gate-to-drain distance (Lgd) from 2.0 to 0.5 μm results in 7\% reduction in the current collapse. This improvement is attributed to a decrease in surface trapping, which, in this case, is found to have a greater impact on current collapse than relatively slow traps in the buffer layer. To support this argument, TCAD simulations are conducted. Load-pull analysis confirms that scaling the devices to Lgd = 0.5 μm provides 15\% better output power density at 10 GHz than Lgd = 2.0 μm. Additionally, a new passivation layer for reduced surface traps exhibits a 20 to 30\% higher output power density and at least a 10\% improvement in power-added efficiency at 20 GHz on a nominally identical GaN-on-semi-insulating SiC epi-wafer.}, language = {en} } @misc{RudolphBeleniotisZervosetal., author = {Rudolph, Matthias and Beleniotis, Petros and Zervos, Christos and Rohde, Ulrich L. and Andrei, Cristina}, title = {Determining GaN HEMT trap models from MHz load-line measurement : a case study}, series = {2024 15th German Microwave Conference (GeMiC)}, journal = {2024 15th German Microwave Conference (GeMiC)}, publisher = {IEEE}, doi = {10.23919/GeMiC59120.2024.10485297}, pages = {29 -- 32}, language = {en} } @misc{KauleLuoChevtchenkoetal., author = {Kaule, Evelyne and Luo, Peng and Chevtchenko, Serguei A. and Andrei, Cristina and Rudolph, Matthias}, title = {Analysis for the optimization of a rugged GaN low-noise amplifier MMIC with a compact stacked first amplifier stage}, series = {2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems (COMCAS)}, journal = {2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems (COMCAS)}, publisher = {IEEE}, doi = {10.1109/COMCAS58210.2024.10666226}, pages = {1 -- 4}, language = {en} } @misc{HaqueBeleniotisYazdanietal., author = {Haque, Sanaul and Beleniotis, Petros and Yazdani, Hossein and Rudolph, Matthias}, title = {Ka-Band GaN power amplifier with integrated DC supply switch and RF switch}, series = {2024 25th International Microwave and Radar Conference (MIKON)}, journal = {2024 25th International Microwave and Radar Conference (MIKON)}, publisher = {IEEE}, doi = {10.23919/MIKON60251.2024.10633971}, pages = {1 -- 5}, language = {en} } @incollection{NaumannRudolph, author = {Naumann, Matthias and Rudolph, David}, title = {L{\"a}ndliche Utopien als infrastrukturelle Utopien : Progressive Alternativen zu infrastruktureller Peripherisierung und infrastrukturellem Populismus.}, series = {L{\"a}ndliche Utopien : Herausforderungen und Alternativen regionaler Entwicklungen.}, booktitle = {L{\"a}ndliche Utopien : Herausforderungen und Alternativen regionaler Entwicklungen.}, publisher = {Transcript Verlag}, address = {Bielefeld}, isbn = {978-3-8394-7233-0}, doi = {10.1515/9783839472330}, pages = {115 -- 126}, language = {de} } @misc{KauleYazdaniRudolph, author = {Kaule, Evelyne and Yazdani, Hossein and Rudolph, Matthias}, title = {Highly Linear Concurrent Tri-Band GaN LNA MMIC for 0.8/1.8/3.6 GHz Applications}, series = {24th International Microwave and Radar Conference (MIKON)}, journal = {24th International Microwave and Radar Conference (MIKON)}, isbn = {978-83-956020-3-0}, doi = {10.23919/Mikon54314.2022.9924770}, pages = {3}, language = {en} } @misc{ManchandaOkochaRudolph, author = {Manchanda, Prabhav and Okocha, Jonathan and Rudolph, Matthias}, title = {Improved Sensitivity of Zero Bias Diode Power Detectors using Impedance Tuners}, series = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)}, journal = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)}, isbn = {978-1-6654-5203-8}, doi = {10.1109/MAPCON56011.2022.10047233}, pages = {1261 -- 1266}, language = {en} } @misc{RaoDoernerYazdanietal., author = {Rao, Megha Krishnaji and D{\"o}rner, Ralf and Yazdani, Hossein and Rudolph, Matthias}, title = {GaN-HEMT Based Common-Gate LNA MMIC with Integrated Switch for Compact 5G Transceivers}, series = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)}, journal = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON)}, isbn = {978-1-6654-5203-8}, doi = {10.1109/MAPCON56011.2022.10047410}, pages = {1104 -- 1107}, language = {en} } @misc{SriperumbuduriWenzelRudolph, author = {Sriperumbuduri, Venkata Pawan and Wenzel, Andreas and Rudolph, Matthias}, title = {Mathematical Analysis of Switching HBT Devices}, series = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 12-16 December 2022, Bangalore, India}, journal = {IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 12-16 December 2022, Bangalore, India}, isbn = {978-1-6654-5203-8}, doi = {10.1109/MAPCON56011.2022.10047449}, pages = {827 -- 831}, language = {en} } @misc{BeleniotisSchniederChevtchenkoetal., author = {Beleniotis, Petros and Schnieder, Frank and Chevtchenko, Serguei A. and Rudolph, Matthias}, title = {Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models}, series = {17th European Microwave Integrated Circuits Conference (EuMIC)}, journal = {17th European Microwave Integrated Circuits Conference (EuMIC)}, isbn = {978-2-87487-070-5}, doi = {10.23919/EuMIC54520.2022.9923511}, pages = {149 -- 152}, language = {de} } @misc{HuynhLeLehmannetal., author = {Huynh, Dang Khoa and Le, Quang Huy and Lehmann, Steffen and Zhao, Zhixing and Bossu, Germain and Arfaoui, Wafa and K{\"a}mpfe, Thomas and Rudolph, Matthias}, title = {Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation}, series = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, journal = {18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin}, isbn = {978-2-87487-073-6}, doi = {10.23919/EuMIC58042.2023.10288886}, pages = {173 -- 176}, language = {en} }