@misc{PieperDerksZoellneretal., author = {Pieper, H. H. and Derks, C. and Z{\"o}llner, Marvin Hartwig and Olbrich, R. and Troeger, L. and Schroeder, Thomas and Neumann, M. and Reichling, M.}, title = {Morphology and nanostructure of CeO2(111) surfaces of single crystals and of Si(111) supported ceria films,}, series = {Physical Chemistry Chemical Physics}, volume = {14}, journal = {Physical Chemistry Chemical Physics}, number = {44}, issn = {1463-9084}, doi = {10.1039/C2CP42733H}, pages = {15361 -- 15368}, language = {en} } @misc{ZoellnerZaumseilWilkensetal., author = {Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Wilkens, Henrik and Gevers, Sebastian and Wollschl{\"a}ger, Joachim and B{\"a}umer, Marcus and Xie, Ya-Hong and Niu, Gang and Schroeder, Thomas}, title = {Stoichiometry-structure correlation of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111)}, series = {Journal of Crystal Growth}, volume = {355}, journal = {Journal of Crystal Growth}, number = {1}, issn = {0022-0248}, pages = {159 -- 165}, language = {en} } @misc{ZoellnerNiuJhangetal., author = {Z{\"o}llner, Marvin Hartwig and Niu, Gang and Jhang, Jin-Hao and Sch{\"a}fer, Andreas and Zaumseil, Peter and B{\"a}umer, Marcus and Schr{\"o}der, Thomas}, title = {Temperature dependent reduction of epitaxial Ce1-xPrxO2-δ (x = 0-1) thin films on Si(111): A combined TPD, XRD, XPS and Raman study}, series = {Journal of Physical Chemistry : C}, volume = {117}, journal = {Journal of Physical Chemistry : C}, number = {47}, issn = {1932-7455}, doi = {10.1021/jp4082867}, pages = {24851 -- 24857}, language = {en} } @misc{WilkensRodewaldGeversetal., author = {Wilkens, Henrik and Rodewald, Jari and Gevers, Sebastian and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Surface morphology of ultra-thin hex-Pr2O3 films on Si(111)}, series = {Journal of Physics : D, Applied Physics}, volume = {46}, journal = {Journal of Physics : D, Applied Physics}, number = {28}, issn = {0022-3727}, pages = {285306 -- 285313}, language = {en} } @misc{NiuZaumseilSchubertetal., author = {Niu, Gang and Zaumseil, Peter and Schubert, Markus Andreas and Z{\"o}llner, Marvin Hartwig and Dabrowski, Jarek Marek and Schroeder, Thomas}, title = {Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, pages = {011906-1 -- 011906-5}, language = {en} } @misc{NiuZoellnerZaumseiletal., author = {Niu, Gang and Z{\"o}llner, Marvin Hartwig and Zaumseil, Peter and Pouliopoulos, A. and d'Acapito, F. and Schr{\"o}der, Thomas and Boscherini, F.}, title = {X-ray diffraction and extended X-ray absorption fine structure study of epitaxial mixed ternary bixbyite PrxY2-xO3 (x=0-2) films on Si (111)}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {4}, issn = {0021-8979}, pages = {043504 -- 043506}, language = {en} } @misc{WilkensSchuckmannOelkeetal., author = {Wilkens, Henrik and Schuckmann, O. and Oelke, R. and Gevers, Sebastian and Schaefer, A. and B{\"a}umer, Marcus and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Stabilization of the ceria Jota-phase Ce7O12 surface on Si(111)}, series = {Applied Physics Letters}, volume = {102}, journal = {Applied Physics Letters}, number = {11}, issn = {0003-6951}, pages = {111602-1 -- 111602-3}, language = {en} } @misc{WilkensSchuckmannOelkeetal., author = {Wilkens, Henrik and Schuckmann, O. and Oelke, R. and Gevers, Sebastian and Reichling, M. and Schaefer, A. and B{\"a}umer, Marcus and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Structural transitions of epitaxial ceria films on Si(111)}, series = {Physical Chemistry Chemical Physics}, volume = {15}, journal = {Physical Chemistry Chemical Physics}, number = {42}, issn = {1463-9084}, pages = {18589 -- 18599}, language = {en} } @misc{OlbrichWilkensOelkeetal., author = {Olbrich, R. and Wilkens, Henrik and Oelke, R. and Wollschl{\"a}ger, Joachim and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas and Reichling, M.}, title = {A well-structured metastable ceria surface}, series = {Applied Physics Letters}, volume = {104}, journal = {Applied Physics Letters}, number = {8}, doi = {10.1063/1.4866667}, pages = {081910-1 -- 081910-4}, language = {en} } @misc{ChahineZoellnerRichardetal., author = {Chahine, Gilbert A. and Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Subhajit, G. and Zaumseil, Peter and Capellini, Giovanni and Schroeder, Thomas and Sch{\"u}lli, Tobias U.}, title = {Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy}, series = {Applied Physics Letters}, volume = {106}, journal = {Applied Physics Letters}, issn = {1077-3118}, doi = {10.1063/1.4909529}, pages = {071902-1 -- 071902-4}, language = {en} } @misc{WilkensSpiessZoellneretal., author = {Wilkens, Henrik and Spieß, Wanja and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schroeder, Thomas and Wollschl{\"a}ger, Joachim}, title = {Post deposition annealing of epitaxial Ce1-xPrxO2-δ films grown on Si(111)}, series = {Physical Chemistry Chemical Physics}, volume = {17}, journal = {Physical Chemistry Chemical Physics}, issn = {1463-9084}, doi = {10.1039/C6CP01553K}, pages = {9991 -- 9996}, language = {en} } @misc{ZoellnerRichardChahineetal., author = {Z{\"o}llner, Marvin Hartwig and Richard, Marie-Ingrid and Chahine, Gilbert A. and Zaumseil, Peter and Reich, Christian and Capellini, Giovanni and Montalenti, Francesco and Marzegalli, Anna and Xie, Ya-Hong and Sch{\"u}lli, Tobias U. and H{\"a}berlen, Maik and Storck, Peter and Schroeder, Thomas}, title = {Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {17}, issn = {1944-8252}, doi = {10.1021/am508968b}, pages = {9031 -- 9037}, language = {en} } @misc{ZaumseilYamamotoSchubertetal., author = {Zaumseil, Peter and Yamamoto, Yuji and Schubert, M. and Capellini, Giovanni and Skibitzki, Oliver and Z{\"o}llner, Marvin Hartwig and Schroeder, Thomas}, title = {Tailoring the strain in Si nano-structures for defect-free epitaxial Ge overgrowth}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {35}, issn = {1361-6528}, doi = {10.1088/0957-4484/26/35/355707}, pages = {355707}, language = {en} } @misc{TarnawskaZoellnerNiermannetal., author = {Tarnawska, Lidia Lupina and Z{\"o}llner, Marvin Hartwig and Niermann, T. and Dietrich, Burkhart and Capellini, Giovanni and Thapa, Sarad and H{\"a}berlen, Maik and Lehmann, M. and Storck, Peter and Schr{\"o}der, Thomas}, title = {Zero Lattice Mismatch and Truly Single Crystalline ScN Buffer Layers for GaN Growth on Silicon}, series = {Applied Physics Letters}, volume = {107}, journal = {Applied Physics Letters}, number = {20}, issn = {1077-3118}, doi = {10.1063/1.4935856}, pages = {201907}, language = {en} } @misc{RichardZoellnerChahineetal., author = {Richard, Marie-Ingrid and Z{\"o}llner, Marvin Hartwig and Chahine, Gilbert A. and Zaumseil, Peter and Capellini, Giovanni and H{\"a}berlen, Maik and Storck, Peter and Sch{\"u}lli, Tobias U. and Schr{\"o}der, Thomas}, title = {Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction}, series = {ACS Applied Materials and Interfaces}, volume = {7}, journal = {ACS Applied Materials and Interfaces}, number = {48}, issn = {1944-8244}, doi = {10.1021/acsami.5b08645}, pages = {26696 -- 26700}, language = {en} } @misc{SanaTetznerDabrowskietal., author = {Sana, Prabha and Tetzner, Henriette and Dabrowski, Jarek Marek and Tarnawska, Lidia Lupina and Costina, Ioan and Thapa, Sarad and Storck, Peter and Schr{\"o}der, Thomas and Z{\"o}llner, Marvin Hartwig}, title = {Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations}, series = {Journal of Applied Physics}, volume = {120}, journal = {Journal of Applied Physics}, issn = {1089-7550}, doi = {10.1063/1.4963826}, pages = {135103}, language = {en} } @misc{KuschelDieckWilkensetal., author = {Kuschel, Olga and Dieck, Florian and Wilkens, Henrik and Gevers, Sebastian and Rodewald, Jari and Otte, Christian and Z{\"o}llner, Marvin Hartwig and Niu, Gang and Schr{\"o}der, Thomas and Wollschl{\"a}ger, Joachim}, title = {Plasma Enhanced Complete Oxidtation of Ultrathin Epitaxial Praseodymia Films on Si(111)}, series = {Materials}, volume = {8}, journal = {Materials}, number = {9}, issn = {1996-1944}, doi = {10.3390/ma8095312}, pages = {6379 -- 6390}, language = {en} } @misc{NiuZoellnerSchroederetal., author = {Niu, Gang and Z{\"o}llner, Marvin Hartwig and Schr{\"o}der, Thomas and Sch{\"a}fer, Andreas and Jhang, Jin-Hao and Zielasek, Volkmar and B{\"a}umer, Marcus and Wilkens, Henrik and Wollschl{\"a}ger, Joachim and Olbrich, Reinhard and Lammers, Christian and Reichling, Michael}, title = {Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems}, series = {Physical Chemistry Chemical Physics}, volume = {17}, journal = {Physical Chemistry Chemical Physics}, number = {38}, issn = {1463-9084}, doi = {10.1039/C5CP02283E}, pages = {24513 -- 24540}, language = {en} } @misc{MahmoodinezhadMoralesNaumannetal., author = {Mahmoodinezhad, Ali and Morales, Carlos and Naumann, Franziska and Plate, Paul and Meyer, Robert and Janowitz, Christoph and Henkel, Karsten and Kot, Małgorzata and Z{\"o}llner, Marvin Hartwig and Wenger, Christian and Flege, Jan Ingo}, title = {Low-temperature atomic layer deposition of indium oxide thin films using trimethylindium and oxygen plasma}, series = {Journal of Vacuum Science and Technology A}, volume = {39}, journal = {Journal of Vacuum Science and Technology A}, number = {6}, issn = {0734-2101}, doi = {10.1116/6.0001375}, abstract = {Indium oxide (InxOy) thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) using trimethylindium and oxygen plasma in a low-temperature range of 80-200 °C. The optical properties, chemical composition, crystallographic structure, and electrical characteristics of these layers were investigated by spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), as well as current-voltage and capacitance-voltage measurements. The SE results yielded a nearly constant growth rate of 0.56 {\AA} per cycle and a thickness inhomogeneity of ≤1.2\% across 4-in. substrates in the temperature range of 100-150 °C. The refractive index (at 632.8 nm) was found to be 2.07 for the films deposited at 150 °C. The PEALD-InxOy layers exhibit a direct (3.3 ± 0.2 eV) and an indirect (2.8 ± 0.1 eV) bandgap with an uptrend for both with increasing substrate temperature. Based on XPS characterization, all InxOy samples are free of carbon impurities and show a temperature-dependent off-stoichiometry indicating oxygen vacancies. XRD diffraction patterns demonstrate an onset of crystallization at 150 °C. Consistent with the optical, XPS, and XRD data, the films deposited at ≥150 °C possess higher electrical conductivity. Our findings prove that a low-temperature PEALD process of InxOy is feasible and promising for a high-quality thin-film deposition without chemical impurities on thermally fragile substrates.}, language = {en} } @misc{JanowitzMahmoodinezhadKotetal., author = {Janowitz, Christoph and Mahmoodinezhad, Ali and Kot, Małgorzata and Morales, Carlos and Naumann, Franziska and Plate, Paul and Z{\"o}llner, Marvin Hartwig and B{\"a}rwolf, Florian and Stolarek, David and Wenger, Christian and Henkel, Karsten and Flege, Jan Ingo}, title = {Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation}, series = {Dalton Transactions}, volume = {51}, journal = {Dalton Transactions}, issn = {1477-9234}, doi = {10.1039/D1DT04008A}, pages = {9291 -- 9301}, abstract = {An Al2O3/ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) in situ. The band offsets of the heterointerface were then studied by consecutive removal of the layers by argon sputtering, followed by in situ X-ray photoelectron spectroscopy. The valence band maximum and conduction band minimum of Al2O3 are found to be 1.1 eV below and 2.3 eV above those of ZnO, resulting in a type-I staggered heterojunction. An apparent reduction of ZnO to elemental Zn in the interface region was detected in the Zn 2p core level and Zn L3MM Auger spectra. This suggests an interface formation different from previous models. The reduction of ZnO to Zn in the interface region accompanied by the creation of oxygen vacancies in ZnO results in an upward band bending at the interface. Therefore, this study suggests that interfacial properties such as the band bending as well as the valence and conduction band offsets should be in situ controllable to a certain extent by careful selection of the process parameters.}, language = {en} } @misc{MoralesPlateMarthetal., author = {Morales, Carlos and Plate, Paul and Marth, Ludwig and Naumann, Franziska and Kot, Małgorzata and Janowitz, Christoph and Kus, Peter and Z{\"o}llner, Marvin Hartwig and Wenger, Christian and Henkel, Karsten and Flege, Jan Ingo}, title = {Bottom-up design of a supercycle recipe for atomic layer deposition of tunable Indium Gallium Zinc Oxide thin films}, series = {ACS Applied Electronic Materials}, volume = {6}, journal = {ACS Applied Electronic Materials}, number = {8}, publisher = {American Chemical Society (ACS)}, issn = {2637-6113}, doi = {10.1021/acsaelm.4c00730}, pages = {5694 -- 5704}, abstract = {We present a successful bottom-up approach to design a generic plasma-enhanced atomic layer deposition (PEALD) supercycle recipe to grow high-quality indium gallium zinc oxide (IGZO) thin films with tunable composition at a relatively low temperature of 150 °C. In situ real-time ellipsometric characterization in combination with ex situ complementary techniques has been used to optimize the deposition process and quality of the films by identifying and solving growth challenges such as degree of oxidation, nucleation delays, or elemental composition. The developed supercycle approach enables facile control of the target composition by adapting the subcycle ratios within the supercycle process. Compared to other low-temperature deposition techniques resulting in amorphous films, our PEALD-IGZO process at 150 °C results in nearly amorphous, nanocrystalline films. The preparation of IGZO films at low temperature by a supercycle PEALD approach allows controlling the thickness, composition, and electrical properties while preventing thermally induced segregation.}, language = {en} } @misc{HayatRatzkeAlvaradoChavarinetal., author = {Hayat, Ahsan and Ratzke, Markus and Alvarado Chavarin, Carlos and Z{\"o}llner, Marvin Hartwig and Corley-Wiciak, Agnieszka Anna and Schubert, Markus Andreas and Wenger, Christian and Fischer, Inga Anita}, title = {Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration}, series = {Thin Solid Films}, volume = {807}, journal = {Thin Solid Films}, issn = {0040-6090}, doi = {10.1016/j.tsf.2024.140547}, pages = {3}, language = {en} } @misc{ReiterHanMaietal., author = {Reiter, Sebastian and Han, Weijia and Mai, Christian and Spirito, Davide and Jose, Josmy and Z{\"o}llner, Marvin Hartwig and Fursenko, Oksana and Schubert, Markus Andreas and Stemmler, Ivo and Wenger, Christian and Fischer, Inga Anita}, title = {Titanium Nitride Plasmonic Nanohole Arrays for CMOS-compatible integrated refractive index sensing: influence of layer thickness on optical properties}, series = {Plasmonics}, journal = {Plasmonics}, issn = {1557-1963}, doi = {10.1007/s11468-023-01810-3}, pages = {1 -- 13}, language = {en} }