@inproceedings{KoalUlbrichtEngelkeetal., author = {Koal, Tobias and Ulbricht, Markus and Engelke, Piet and Vierhaus, Heinrich Theodor}, title = {On the Feasibility of Combining On-Line-Test and Self Repair for Logic Circuits}, series = {16th IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS 2013), Karlovny Vary, April 2013}, booktitle = {16th IEEE Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS 2013), Karlovny Vary, April 2013}, editor = {Sekanina, Lukas}, publisher = {IEEE Computer Society}, isbn = {978-1-4673-6135-4}, language = {en} } @misc{PerezBoschQuesadaMahadevaiahRizzietal., author = {Perez-Bosch Quesada, Emilio and Mahadevaiah, Mamathamba Kalishettyhalli and Rizzi, Tommaso and Wen, Jianan and Ulbricht, Markus and Krstic, Milos and Wenger, Christian and Perez, Eduardo}, title = {Experimental Assessment of Multilevel RRAM-based Vector-Matrix Multiplication Operations for In-Memory Computing}, series = {IEEE Transactions on Electron Devices}, volume = {70}, journal = {IEEE Transactions on Electron Devices}, number = {4}, issn = {0018-9383}, doi = {10.1109/TED.2023.3244509}, pages = {2009 -- 2014}, abstract = {Resistive random access memory (RRAM)-based hardware accelerators are playing an important role in the implementation of in-memory computing (IMC) systems for artificial intelligence applications. The latter heavily rely on vector-matrix multiplication (VMM) operations that can be efficiently boosted by RRAM devices. However, the stochastic nature of the RRAM technology is still challenging real hardware implementations. To study the accuracy degradation of consecutive VMM operations, in this work we programed two RRAM subarrays composed of 8x8 one-transistor-one-resistor (1T1R) cells following two different distributions of conductive levels. We analyze their robustness against 1000 identical consecutive VMM operations and monitor the inherent devices' nonidealities along the test. We finally quantize the accuracy loss of the operations in the digital domain and consider the trade-offs between linearly distributing the resistive states of the RRAM cells and their robustness against nonidealities for future implementation of IMC hardware systems.}, language = {en} } @misc{MishurovaSydowThiedeetal., author = {Mishurova, Tatjana and Sydow, Benjamin and Thiede, Tobias and Sizova, Irina and Ulbricht, Alexander and Bambach, Markus and Bruno, Giovanni}, title = {Residual Stress and Microstructure of a Ti-6Al-4V Wire Arc Additive Manufacturing Hybrid Demonstrator}, series = {Metals}, volume = {6}, journal = {Metals}, number = {10}, issn = {2075-4701}, doi = {10.3390/met10060701}, language = {en} }