@inproceedings{HaeberleGasparBarquinhaetal., author = {Haeberle, J{\"o}rg and Gaspar, Diana and Barquinha, Pedro and Pereira, Lu{\´i}s and Martins, Rodrigo and Fortunato, Elvira and Machulik, Stephan and Janowitz, Christoph and Manzke, Recardo and Schmeißer, Dieter}, title = {The Electronic Structure of amorphuos SnOx thin films and SnO2 single crystals}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, issn = {0420-0195}, pages = {S. 271}, abstract = {We compare the electronic properties of amorphous p-type SnOx thin film grown by rf magnetron sputtering with those of n-type SnO2 single crystals grown by cvt. We use resPES to study the electronic band structure. We measure the core levels, the VB PES data, partial Integrated Yield (pIY) and the XAS absorption data. From the resPES data recorded at the O1s and the Sn3d edges we derive the VB pDOS and the CB pDOS . The differences are most pronounced in the position of the VBM as for the a-SnOx films there appears a band closer to the Fermi energy. In addition for the SnOx we find in the XAS and pIY data a significant peak that appears right at the Fermi energy. This peak is absent in the single crystalline data. We attribute this to a change in the configuration of the Sn4d states to form a 4d8 configuration instead of 4d9 and 4d10 configurations which are identified in the single crystalline data.}, language = {en} }