@misc{LippertDabrowskiOberbecketal., author = {Lippert, Gunther and Dabrowski, Jarek Marek and Oberbeck, Lars and Schroeder, Uwe and Costina, Ioan and Lupina, Grzegorz and Ratzke, Markus and Zaumseil, Peter and M{\"u}ssig, Hans-Joachim}, title = {Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films}, series = {Journal of the electrochemical society}, volume = {155}, journal = {Journal of the electrochemical society}, number = {5}, issn = {1945-7111}, doi = {10.1149/1.2875741}, pages = {G97 -- G114}, language = {en} } @inproceedings{TorcheMuellerHenkeletal., author = {Torche, Mohamed and M{\"u}ller, Klaus and Henkel, Karsten and Lupina, Grzegorz and Goryako, Andrey and Wollweber, J{\"u}rgen and Schmeißer, Dieter}, title = {Investigations of 3C-SiC growth on Si (001)}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Carbide was grown on Si (001) - substrates with supply of C2H2. Investigation of the interface Si/SiC (buffer layer) is essential for optimized preparation conditions, leading to a high quality of the growing SiC crystal. In addition to the lattice mismatch of 20 per cent between Si and SiC, which causes defects like dislocations or stacking faults, the chemical homogeneity of this layer is important. XPS was used to characterize the first state of SiC crystal growth on the Si substrate. Carbonizing with C2H2 leads to surface reactions which build up the buffer layer. By using electron spectroscopy, it was possible to characterize the SiC/Si (001) buffer layer, depending on the following reaction parameters: Tsubstrate , PC2H2 , PH2 , the ratio of pressures and the reaction time. The measurements were performed in terms of the content of carbide, oxide and roughness/etching-efficiency (Profilometer) for the reaction parameters above. We found, that the most critical parameter is the temperature of the substrate (Tsubstrate).}, language = {en} } @inproceedings{LupinaSchroederDabrowskietal., author = {Lupina, Grzegorz and Schroeder, Thomas and Dabrowski, Jarek Marek and Schmeißer, Dieter and M{\"u}ssig, Hans-Joachim}, title = {Ti-doping of Pr silicate layers for high-k dielectrics applications}, series = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, booktitle = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, publisher = {Deutsche Physikalische Gesellschaft}, address = {Bad Honnef}, abstract = {Near-term downscaling of the metal-oxide-semiconductor field-effect transistors (MOSFETs) requires the replacement of the SiO2 gate oxide with a material having a higher dielectric constant. Recent studies indicate that silicate materials are the most promising candidates; among them are Pr silicates. Applying a combination of x-ray photoelectron spectroscopy (XPS), electrical measurements (C-V), and ab initio calculations, we investigated the effect of thin Ti doping on the structural and electrical properties of the gate stacks composed of a Pr silicate film and a SiO2-based interfacial buffer layer. Metallic Ti was deposited at room temperature after the formation of the Pr silicate dielectric. The resulting layered structures were annealed under ultra-high vacuum (UHV) at various temperatures between 70∘C and 880∘C. XPS indicates that the evaporated layer preserves its metallic character over the whole range of UHV annealing temperatures. Synchrotron radiation XPS at BESSY II shows that large amounts of Ti atoms incorporated into the Pr silicate remain metallic even after air exposure at room temperature. Annealing in nitrogen ambient at 300∘C leads to the oxidation of these atoms so that a mixed Pr:Ti silicate is formed. We show that the so formed dielectrics exhibit an improved equivalent oxide thickness and a reduced density of interface states.}, language = {en} } @misc{NiuCapelliniLupinaetal., author = {Niu, Gang and Capellini, Giovanni and Lupina, Grzegorz and Niermann, Tore and Salvalaglio, Marco and Marzegalli, Anna and Schubert, Markus Andreas and Zaumseil, Peter and Krause, Hans-Michael and Skibitzki, Oliver and Lehmann, Michael and Montalenti, Francesco and Xie, Ya-Hong and Schr{\"o}der, Thomas}, title = {Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {3}, issn = {1944-8252}, pages = {2017 -- 2026}, language = {en} } @misc{DabrowskiLippertAvilaetal., author = {Dabrowski, Jarek Marek and Lippert, Gunther and Avila, J. and Baringhaus, Jens and Colambo, I. and Dedkov, Yu. S. and Herziger, Felix and Lupina, Grzegorz and Maultzsch, J. and Schaffus, T. and Schr{\"o}der, Thomas and Sowinska, Małgorzata and Tegenkamp, Christoph and Vignaud, D. and Asensio, Maria Carmen}, title = {Understanding the growth mechanism of graphene on Ge/Si(001) surfaces}, series = {Scientific Reports}, journal = {Scientific Reports}, number = {6}, issn = {2045-2322}, doi = {10.1038/srep31639}, pages = {Art. 31639}, language = {en} } @misc{BartolomeoPassacantandoNiuetal., author = {Bartolomeo, Antonio di and Passacantando, Maurizio and Niu, Gang and Schlykow, Viktoria and Lupina, Grzegorz and Giubileo, Filippo and Schr{\"o}der, Thomas}, title = {Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanotip arrays}, series = {Nanotechnology}, volume = {27}, journal = {Nanotechnology}, number = {48}, issn = {1361-6528}, pages = {485707}, language = {en} } @misc{LukosiusDabrowskiLiskeretal., author = {Lukosius, Mindaugas and Dabrowski, Jarek Marek and Lisker, Marco and Kitzmann, Julia and Schulze, Sebastian and Lippert, Gunther and Fursenko, Oksana and Yamamoto, Yuji and Schubert, Markus Andreas and Krause, Hans-Michael and Wolff, Andre and Mai, A. and Schr{\"o}der, Thomas and Lupina, Grzegorz}, title = {Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {49}, issn = {1944-8244}, doi = {10.1021/acsami.6b11397}, pages = {33786 -- 33793}, language = {en} } @misc{BartolomeoGiubileoRomeoetal., author = {Bartolomeo, Antonio di and Giubileo, Filippo and Romeo, Francesco and Sabatino, Paolo and Carapella, Giovanni and Iemmo, Laura and Schr{\"o}der, Thomas and Lupina, Grzegorz}, title = {Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics}, series = {Nanotechnology}, volume = {26}, journal = {Nanotechnology}, number = {47}, issn = {1361-6528}, pages = {475202}, language = {en} }