@misc{LukosiusLippertDabrowskietal., author = {Lukosius, Mindaugas and Lippert, Gunther and Dabrowski, Jarek Marek and Kitzmann, Julia and Lisker, Marco and Kulse, Philipp and Kr{\"u}ger, Andreas and Fursenko, Oksana and Costina, Ioan and Trusch, Andreas and Yamamoto, Yuji and Wolff, Andre and Mai, Andreas and Schr{\"o}der, Thomas}, title = {Graphene Synthesis and Processing on Ge Substrates}, series = {ECS transactions}, volume = {75}, journal = {ECS transactions}, number = {8}, issn = {1938-6737}, doi = {10.1149/07508.0533ecst}, pages = {533 -- 540}, language = {en} } @misc{LukosiusDabrowskiLiskeretal., author = {Lukosius, Mindaugas and Dabrowski, Jarek Marek and Lisker, Marco and Kitzmann, Julia and Schulze, Sebastian and Lippert, Gunther and Fursenko, Oksana and Yamamoto, Yuji and Schubert, Markus Andreas and Krause, Hans-Michael and Wolff, Andre and Mai, A. and Schr{\"o}der, Thomas and Lupina, Grzegorz}, title = {Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates}, series = {ACS Applied Materials and Interfaces}, volume = {8}, journal = {ACS Applied Materials and Interfaces}, number = {49}, issn = {1944-8244}, doi = {10.1021/acsami.6b11397}, pages = {33786 -- 33793}, language = {en} } @misc{MahadevaiahPerezLiskeretal., author = {Mahadevaiah, Mamathamba Kalishettyhalli and Perez, Eduardo and Lisker, Marco and Schubert, Markus Andreas and Perez-Bosch Quesada, Emilio and Wenger, Christian and Mai, Andreas}, title = {Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers}, series = {Electronics : open access journal}, volume = {11}, journal = {Electronics : open access journal}, number = {10}, issn = {2079-9292}, doi = {10.3390/electronics11101540}, pages = {14}, abstract = {The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I-V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.}, language = {en} } @misc{CapistaLukoseMajnoonetal., author = {Capista, Daniele and Lukose, Rasuole and Majnoon, Farnaz and Lisker, Marco and Wenger, Christian and Lukosius, Mindaugas}, title = {Study on the metal -graphene contact resistance achieved with one -dimensional contact architecture}, series = {IEEE Nanotechnology Materials and Devices Conference (NMDC 2023), Paestum, Italy, 22-25 October 2023}, journal = {IEEE Nanotechnology Materials and Devices Conference (NMDC 2023), Paestum, Italy, 22-25 October 2023}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-3546-0}, doi = {10.1109/NMDC57951.2023.10343775}, pages = {118 -- 119}, abstract = {Graphene has always been considered as one of the materials with the greatest potential for the realization of improved microelectronic and photonic devices. But to actually reach its full potential in Si CMOS technology, graphene -based devices need to overcome different challenges. They do not only need to have better performances than standard devices, but they also need to be compatible with the production of standard Si based devices. To address the first challenge the main route requires the optimization of the contact resistance, that highly reduces the devices performance, while the second challenges requires the integration of graphene inside the standard production lines used for microelectronic. In this work we used an 8" wafer pilot -line to realize our devices and we studied the behavior of the contact resistance between metal and graphene obtained by one -dimensional contact architecture between the two materials. The contact resistance has been measured by means of Transmission Line Method (TLM) with several contact patterning.}, language = {en} } @misc{LukosiusLukoseLiskeretal., author = {Lukosius, Mindaugas and Lukose, Rasuolė and Lisker, Marco and Dubey, P. K. and Raju, A. I. and Capista, Daniele and Majnoon, Farnaz and Mai, A. and Wenger, Christian}, title = {Developments of Graphene devices in 200 mm CMOS pilot line}, series = {Proc. Nanotechnology Materials and Devices Conference (NMDC 2023),Paestum, Italy, 22-25 October 2023}, journal = {Proc. Nanotechnology Materials and Devices Conference (NMDC 2023),Paestum, Italy, 22-25 October 2023}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, isbn = {979-8-3503-3546-0}, doi = {10.1109/NMDC57951.2023.10343569}, pages = {505 -- 506}, abstract = {Due to the unique electronic band structure, graphene has opened great potential to extend the functionality of a large variety of devices. Despite the significant progress in the fabrication of various graphene based microelectronic devices, the integration of graphene devices still lack the stability and compatibility with Si-technology processes. Therefore, the investigation and preparation of graphene devices in conditions resembling as close as possible the Si technology environment is of highest importance. This study aims to explore various aspects of graphene research on a 200mm pilot line, with a focus on simulations and fabrication of graphene modulator. To be more precise, it includes design and fabrication of the layouts, necessary mask sets, creation of the flows, fabrication, and measurements of the Gr modulators on 200 mm wafers.}, language = {en} } @misc{LukosiusLukoseLiskeretal., author = {Lukosius, Mindaugas and Lukose, Rasuolė and Lisker, Marco and Luongo, G. and Elviretti, M. and Mai, Andreas and Wenger, Christian}, title = {Graphene Research in 200 mm CMOS Pilot Line}, series = {45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), 2022}, journal = {45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), 2022}, isbn = {978-953-233-103-5}, issn = {2623-8764}, doi = {10.23919/MIPRO55190.2022.9803362}, pages = {113 -- 117}, abstract = {Due to the unique electronic structures, graphene and other 2D Materials are considered as materials which can enable and extend the functionalities and performance in a large variety of applications, among them in microelectronics. At this point, the investigation and preparation of graphene devices in conditions resembling as close as possible the Si technology environment is of highest importance.Towards these goals, this paper focuses on the full spectra of graphene research aspects in 200mm pilot line. We investigated different process module developments such as CMOS compatible growth of high quality graphene on germanium and its growth mechanisms, transfer related challenges on target substrates, patterning, passivation and various concepts of contacting of graphene on a full 200 mm wafers. Finally, we fabricated proof-of-concept test structures e.g. TLM, Hall bars and capacitor structures to prove the feasibility of graphene processing in the pilot line of IHP.}, language = {en} } @misc{TetznerSeifertSkibitzkietal., author = {Tetzner, Henriette and Seifert, W. and Skibitzki, Oliver and Yamamoto, Yuji and Lisker, Marco and Mirza, M. M. and Fischer, Inga Anita and Paul, Douglas J. and De Seta, Monica and Capellini, Giovanni}, title = {Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)}, series = {Applied Physics Letter}, volume = {122}, journal = {Applied Physics Letter}, number = {24}, issn = {1077-3118}, doi = {10.1063/5.0152962}, language = {en} } @misc{CapelliniKozłowskiYamamotoetal., author = {Capellini, Giovanni and Kozłowski, Grzegorz and Yamamoto, Yuji and Lisker, Marco and Tillack, Bernd and Ghrib, A. and Kersauson, M. de and El Kurdi, M. and Boucaud, P. and Schroeder, Thomas}, title = {Tensile strained Ge layers obtained via Si-CMOS compatible approach}, series = {Journal of Applied Physics}, volume = {113}, journal = {Journal of Applied Physics}, number = {1}, pages = {013513-1 -- 013513-6}, language = {en} }