@misc{SteuerLiedkeButterlingetal., author = {Steuer, O. and Liedke, Maciej O. and Butterling, M. and Schwarz, D. and Schulze, J. and Li, Z. and Wagner, A. and Fischer, Inga Anita and H{\"u}bner, R. and Zhou, S.}, title = {Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy}, series = {Journal of Physics: Condensed Matter}, volume = {36}, journal = {Journal of Physics: Condensed Matter}, number = {8}, issn = {0953-8984}, doi = {10.1088/1361-648X/ad0a10}, pages = {1 -- 11}, abstract = {Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening - variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters.}, language = {en} } @misc{KashkarovNikitenkovSutyginaetal., author = {Kashkarov, Egor B. and Nikitenkov, Nikolay and Sutygina, Alina and Laptev, Roman and Bordulev, Yuriy and Obrosov, Aleksei and Liedke, Maciej O. and Zak, Andrzej and Weiß, Sabine}, title = {Microstructure, defect structure and hydrogen trapping in zirconium alloy Zr-1Nb treated by plasma immersion Ti ion implantation and deposition}, series = {Journal of Alloys and Compounds}, volume = {732}, journal = {Journal of Alloys and Compounds}, issn = {0925-8388}, doi = {10.1016/j.jallcom.2017.10.151}, pages = {80 -- 87}, abstract = {The effect of low energy plasma immersion ion implantation and deposition of titanium on microstructure, defect structure and hydrogen trapping in zirconium alloy Zr-1Nb was studied. Defect structure and distribution were analyzed by Doppler broadening using slow positron beam. The surface microstructure after modification is represented by nanostructured Ti grains with random orientation. The gradient distribution of titanium as well as vacancy type defects were analyzed. The concentration of vacancy type defects is rising with increasing bias voltage. Gas-phase hydrogenation of the Ti-modified Zr-1Nb alloy was performed at 400 °C for 60 min. The strong interaction of hydrogen with vacancy type defects was demonstrated. Two different changes in the defect structure after hydrogenation were observed: when a titanium film is formed on the surface (after deposition at 500 V) hydrogen trapping occurs with the formation of titanium hydride phases, while in the implanted layer (deposition at 1000 and 1500 V) hydrogen is trapped due to interaction with vacancy type defects. The physical basis of Ti diffusion and its influence on the evolution of defect structure after surface modification and hydrogenation were discussed.}, language = {en} }