@inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency}, series = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, booktitle = {1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {0-7803-5135-5}, pages = {741 -- 744}, language = {en} } @inproceedings{RudolphDoernerHeymannetal., author = {Rudolph, Matthias and D{\"o}rner, Ralf and Heymann, Peter and Lenk, Friedrich}, title = {Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors}, series = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, booktitle = {2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-6538-0}, pages = {1967 -- 1970}, language = {en} } @inproceedings{LenkRudolph, author = {Lenk, Friedrich and Rudolph, Matthias}, title = {New Extraction Algorithm for GaAs-HBTs With Low Intrinsic Base Resistance}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {725 -- 728}, language = {en} } @inproceedings{RudolphLenkDoerneretal., author = {Rudolph, Matthias and Lenk, Friedrich and D{\"o}rner, Ralf and Heymann, Peter}, title = {Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels}, series = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, booktitle = {IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention \& Trade Center, Seattle, Washington, Vol. 2}, publisher = {IEEE Service Center}, address = {Piscataway, NJ}, isbn = {0-7803-7239-5}, pages = {997 -- 1000}, language = {en} } @misc{RudolphLenkLlopisetal., author = {Rudolph, Matthias and Lenk, Friedrich and Llopis, O. and Heinrich, Wolfgang}, title = {On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs}, series = {IEEE transactions on microwave theory and techniques}, volume = {54}, journal = {IEEE transactions on microwave theory and techniques}, number = {7}, issn = {0018-9480}, pages = {2954 -- 2961}, language = {en} } @inproceedings{LenkDoernerRumiantsevetal., author = {Lenk, Friedrich and D{\"o}rner, Ralf and Rumiantsev, Andrej and Rudolph, Matthias}, title = {Calibration Residual Error Propagation Analysis Using Conformal Mapping}, series = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, booktitle = {77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011}, publisher = {Piscataway, NJ}, address = {IEEE}, isbn = {978-1-61284-959-1}, pages = {Paper 2-4}, language = {en} } @inproceedings{RumiantsevDoernerLenk, author = {Rumiantsev, Andrej and D{\"o}rner, Ralf and Lenk, Friedrich}, title = {Impact of in-situ TRL reference impedance determination on parameter extraction}, series = {Microwave Conference (EuMC), 2012 42nd European, Amsterdam, Netherlands, 29 October - 1 November 2012}, booktitle = {Microwave Conference (EuMC), 2012 42nd European, Amsterdam, Netherlands, 29 October - 1 November 2012}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {978-1-4673-2215-7}, pages = {593 -- 596}, abstract = {This paper investigates the impact of possible parameter extraction errors caused by inaccurate definition of the calibration reference impedance of in-situ multiline TRL. Two calibration sets implemented on GaAs and Si/SiGe:C wafer processes were quantitatively analyzed. Obtained results demonstrated that for most practical cases, the desired 5\%-level of confidence of extracted parameters of high-reflective devices can easily be achieved without additional efforts. Thus, implementation of the in-situ TRL into a characterization workflow of high-performance microwave devices can be significantly simplified.}, language = {en} } @misc{KraemerMelianiLenketal., author = {Kraemer, Thorsten and Meliani, Chafik and Lenk, Friedrich and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers}, series = {Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008}, journal = {Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008}, isbn = {978-1-4244-2258-6}, doi = {10.1109/ICIPRM.2008.4702999}, pages = {1 -- 3}, abstract = {We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized.}, language = {en} } @misc{KraemerLenkMaassdorfetal., author = {Kraemer, Thorsten and Lenk, Friedrich and Maaßdorf, Andre and W{\"u}rfl, Joachim and Tr{\"a}nkle, G{\"u}nther}, title = {High Yield Transferred Substrate InP DHBT}, series = {Indium Phosphide \& Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007}, journal = {Indium Phosphide \& Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007}, publisher = {IEEE}, address = {Piscataway, NJ}, isbn = {1-4244-0875-X}, doi = {10.1109/ICIPRM.2007.381210}, pages = {407 -- 408}, abstract = {A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3\%SD, fmax = 250 GHz plusmn 5\%SD at a breakdown voltage of BVceo = 6 V.}, language = {en} } @inproceedings{LenkKlockenhoffMaassdorfetal., author = {Lenk, Friedrich and Klockenhoff, Harald and Maaßdorf, Andre and W{\"u}rfl, Joachim and Heinrich, Wolfgang}, title = {A 3.2 W coplanar single-device X-band amplifier with GaAs HBT}, series = {Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005}, booktitle = {Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005}, publisher = {Horizon House Publ.}, address = {London}, isbn = {88-902012-0-7}, pages = {49 -- 52}, abstract = {High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47\% PAE is achieved.}, language = {en} } @inproceedings{LenkSchottHilsenbecketal., author = {Lenk, Friedrich and Schott, Matthias and Hilsenbeck, Jochen and Heinrich, Wolfgang}, title = {Low phase-noise GaAs-HBT monolithic W-band oscillator}, series = {34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October}, booktitle = {34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October}, publisher = {London}, address = {Horizon House Publ.}, isbn = {1-58053-992-0}, pages = {897 -- 900}, language = {en} }