@misc{BischoffLeisePerezBoschQuesadaetal., author = {Bischoff, Carl and Leise, Jakob and Perez-Bosch Quesada, Emilio and Perez, Eduardo and Wenger, Christian and Kloes, Alexander}, title = {Implementation of device-to-device and cycle-to-cycle variability of memristive devices in circuit simulations}, series = {Solid-State Electronics}, volume = {194}, journal = {Solid-State Electronics}, issn = {0038-1101}, doi = {10.1016/j.sse.2022.108321}, pages = {4}, abstract = {We present a statistical procedure for the extraction of parameters of a compact model for memristive devices. Thereby, in a circuit simulation the typical fluctuations of the current-voltage (I-V) characteristics from device-to-device (D2D) and from cycle-to-cycle (C2C) can be emulated. The approach is based on the Stanford model whose parameters play a key role to integrating D2D and C2C dispersion. The influence of such variabilities over the model's parameters is investigated by using a fitting algorithm fed with experimental data. After this, the statistical distributions of the parameters are used in a Monte Carlo simulation to reproduce the I-V D2D and C2C dispersions which show a good agreement to the measured curves. The results allow the simulation of the on/off current variation for the design of RRAM cells or memristor-based artificial neural networks.}, language = {en} } @misc{KloesBischoffLeiseetal., author = {Kloes, Alexander and Bischoff, Carl and Leise, Jakob and Perez-Bosch Quesada, Emilio and Wenger, Christian and Perez, Eduardo}, title = {Stochastic switching of memristors and consideration in circuit simulation}, series = {Solid State Electronics}, volume = {201}, journal = {Solid State Electronics}, issn = {0038-1101}, doi = {10.1016/j.sse.2023.108606}, abstract = {We explore the stochastic switching of oxide-based memristive devices by using the Stanford model for circuit simulation. From measurements, the device-to-device (D2D) and cycle-to-cycle (C2C) statistical variation is extracted. In the low-resistive state (LRS) dispersion by D2D variability is dominant. In the high-resistive state (HRS) C2C dispersion becomes the main source of fluctuation. A statistical procedure for the extraction of parameters of the compact model is presented. Thereby, in a circuit simulation the typical D2D and C2C fluctuations of the current-voltage (I-V) characteristics can be emulated by extracting statistical parameters of key model parameters. The statistical distributions of the parameters are used in a Monte Carlo simulation to reproduce the I-V D2D and C2C dispersions which show a good agreement to the measured curves. The results allow the simulation of the on/off current variation for the design of memory cells or can be used to emulate the synaptic behavior of these devices in artificial neural networks realized by a crossbar array of memristors.}, language = {en} }