@misc{AckerLangnerMeineletal., author = {Acker, J{\"o}rg and Langner, Thomas and Meinel, Birgit and Sieber, Tim}, title = {Saw Damage as an Etch Mask for the Acidic Texturization of Multicrystalline Silicon Wafers}, series = {Materials Science in Semiconductor Processing}, volume = {74}, journal = {Materials Science in Semiconductor Processing}, issn = {1369-8001}, doi = {10.1016/j.mssp.2017.09.039}, pages = {238 -- 248}, abstract = {The surface of multicrystalline silicon solar cells are etched by mixtures of HF, HNO3 and H2SiF6 in order to remove saw damage caused by wafer slicing, as well as to create a water surface topography that provides a low reflectance for incident light, otherwise known as the texture. Topographically analyzing wafer surfaces before and after etching has revealed that the saw damage controls the texturized wafer surface's final topography.The first key factor is the dimension and magnitude of the plastic stress field introduced by indenting SiC grains into the wafer surface during the wafering process. The second key factor is that lattice-stressed silicon is etched at a higher rate than unstressed bulk silicon. At the wire entrance, side sharp and large SiC grains create the deepest indention pits, and therefore the deepest of the water surface stress fields. The lattice-disturbed silicon inside these pits is etched at a higher rate compared to the pit's side walls, which are uniformly attacked across the wafer area. Consequentially, existing pits deepen, and these areas generate the wafer's lowest reflectivity. At the wire exit side, a higher number of smaller and rounder SiC particles indent the surface and create more numerous and shallower indention pits compared to the wire entrance side. The resulting stress field is less deep, so less silicon is removed from inside of these pits during etching compared to the wire entrance side. This yields to a wafer surface region consisting of shallowly etched pits and higher reflectance. It is concluded that the saw damage acts like an etch mask in the texturization of multicrystalline silicon wafers.}, language = {en} } @misc{AckerSieberLangneretal., author = {Acker, J{\"o}rg and Sieber, Tim and Langner, Thomas and Herold, Steven}, title = {The impact of lattice strain on the reactivity of silicon}, series = {Silicon for the Chemical and Solar Industry XIV}, journal = {Silicon for the Chemical and Solar Industry XIV}, editor = {Andresen, Birger and Nygaard, Lars and Rong, Harry and Tangstad, Merete and Tveit, Halvard and Page, Ingrid Gamst}, publisher = {The Norwegian University of Science and Technology}, address = {Trondheim}, pages = {11 -- 20}, abstract = {The present study is focused on the question of how lattice strain mechanically introduced into silicon alters the chemical reactivity of the silicon atoms that are affected by the strain field on a microscopic length scale. The magnitude and local distribution of lattice strain are extracted from confocal Raman microscopy measurements. The reactivity of Si is expressed by the etch rate of Si after treatment with HF-HNO3-H2SiF6 mixtures. Then, the local etch rate is calculated from the local etch depth as determined by confocal microscopy. It has been found that tensile strain leads to the highest enhancement of the etch rate, followed by a compressive strain increase in the etch rate.}, language = {en} } @misc{LangnerSieberAcker, author = {Langner, Thomas and Sieber, Tim and Acker, J{\"o}rg}, title = {Etching Shapes the Topography of Silicon Wafers: Lattice-Strain Enhanced Chemical Reactivity of Silicon for Efficient Solar Cells}, series = {ACS Applied Nano Materials}, volume = {1}, journal = {ACS Applied Nano Materials}, number = {8}, doi = {10.1021/acsanm.8b00906}, pages = {4135 -- 4144}, abstract = {Multiwire sawing of silicon (Si) bricks is the state-of-the-art technology to produce multicrystalline Si solar wafers. The massive indentation of the abrasive Si carbide or diamond particles used leads to a heavily mechanically damaged layer on the wafer surface. Etching the surface layer using typical HF-HNO3-H2SiF6 acid mixtures reveals an unevenly distributed etch attack with etch rates several times higher than known for bulk Si etching. The present study follows the hypothesis that lattice strain, introduced by the sawing process, leads to an increase of the etch rate and determines the topography of the etched wafer, the so-called texture. Scratches were introduced into single crystalline Si surfaces in model experiments, and the magnitude and local distribution of lattice strain were extracted from confocal Raman microscopy measurements. The essential parameter used to describe the local reactivity of Si is the local etch rate, which was derived by confocal microscopy from the local height before and after etching. It was found that the reactivity of Si increases linearly with the magnitude of lattice strain. An increase in tensile strain raises the reactivity of Si significantly higher than an increase of compressive strain. The second decisive parameter is the reactivity of the etch mixture that correlates with the total concentration of the acid mixtures. Diluted acid mixtures with a low reactivity attack only the highest strained Si, whereas more concentrated and, therefore, more reactive acid mixtures can attack even slightly strained Si. Side effects, such as the behavior of amorphous or nanocrystalline Si and the generation of highly reactive intermediary species while etching, are discussed. The presence of unevenly distributed lattice strain of different magnitude and the resulting unevenly distributed reactivity of Si explain the features of a heterogeneous etch attack observed and the resulting topography of the etched wafer surface.}, language = {en} } @inproceedings{LangnerSieberAcker, author = {Langner, Thomas and Sieber, Tim and Acker, J{\"o}rg}, title = {Lattice strain controls the etching of solar wafer surfaces}, series = {9th European Silicon Days, 9-12 September 2018, Saarbr{\"u}cken, Germany, Book of abstracts}, booktitle = {9th European Silicon Days, 9-12 September 2018, Saarbr{\"u}cken, Germany, Book of abstracts}, editor = {Scheschkewitz, David and Kickelbick, Guido}, publisher = {Universit{\"a}t des Saarlandes}, address = {Saarbr{\"u}cken}, pages = {S. 201}, abstract = {Multi-wire sawing using an abrasive SiC slurry or diamond wires constitutes the main slicing techniques for multi- and monocrystalline silicon crystals in photovoltaics. The massive mechanical load during the sawing process creates a wafer surface layer characterized by lattice defects, pits, fractures, rifts, cracks, amorphous Si and even some high-pressure Si modifications, otherwise known as saw damage.[1] This highly defect-rich surface causes the rapid recombination of electron-hole pairs, requiring that it be removed by etching in order to manufacture solar cells and to generate a surface morphology having a low reflectivity which directly affects the solar cell's efficiency. However, etching of the saw damage features of a heterogeneous and laterally unevenly distributed etch attack and a significantly higher etch rate compared to the underlying bulk silicon.[2,3] The present study is focused on the question of how mechanically introduced lattice strain in single-crystalline silicon alters the chemical reactivity of the silicon atoms affected by the strain field on a microscopic length scale. The magnitude and local distribution of lattice strain were extracted from confocal Raman microscopy measurements according to Ref. 4. One of the parameters used to describe the reactivity of silicon is the local etch rate, which was derived from the local removal before and after etching by confocal microscopy. Wet-chemical etching was performed with HF-HNO3-H2SiF6 acid mixtures of different concentrations. It was found, that the reactivity of silicon increased linearly with the magnitude of lattice strain. In particular, an increase in tensile strain led to a higher increase in reactivity compared to the increase observed with growing compressive strain. The second decisive parameter is the reactivity of the etch mixture. Diluted acid mixtures with a low reactivity attack only the highest strained Si, whereas more concentrated and therefore more reactive acid mixtures are able to attack even slightly strained Si. Side effects, such as the behavior of amorphous or nanocrystalline Si and the generation of highly reactive intermediary species while etching, are discussed.}, language = {en} } @inproceedings{AckerLangnerKoschwitz, author = {Acker, J{\"o}rg and Langner, Thomas and Koschwitz, Tim}, title = {Lattice-strain induced chemical reactivity of silicon}, series = {8th European Silicon Days 2018, Conference Proceedings}, booktitle = {8th European Silicon Days 2018, Conference Proceedings}, editor = {Marciniec, Bogdan}, publisher = {Wielkopolska Centre for Advanced Technologies, Adam Mickiewicz University}, address = {Poznań, Poland}, pages = {S. 124}, abstract = {Silicon wafer for solar application are produced by multi-wire sawing from 12x12 cm2 silicon bricks. After slicing the wafer surface consists of a several micrometer surface layer of very heterogeneous constitution, the so called saw damage. The topmost layer of the saw damage consists of debris, amorphous silicon and high-pressure silicon phases followed by a very defect-rich and lattice-strained region of fractures, cracks, and rifts caused by the rupture of the silicon lattice during the slicing process [1,2]. Such a damaged surface exhibits very poor semiconductor properties; therefore the saw damage is removed by chemical etching using mixtures of HF, HNO3 and H2SiF6 in order to produce solar cells. Recent investigations showed that the etching of the saw damage is a very heterogeneous process [3-5]. The surface consists of spots at which the etching forms very rapidly deep grooves while other spots remain unetched over a considerably long time. Some of the rapidly formed grooves seem to remain their shape while others grow because of an attack of the side walls, however, without making these grooves significantly deeper. So far there is no explanation for this behavior. The present work is the first study about the locally resolved etching behavior of lattice-strained silicon. The surface of polished single-crystal wafers were scratched with a diamond tip under defined conditions. By means of confocal Raman microscopy the local state of the silicon lattice in and nearby the scratches were characterized in terms of compression and tensile stress with a lateral resolution of 2 μm. Then, the scratches were etched stepwise using HF-HNO3-H2SiF6 mixtures and measured by confocal microscopy to quantify the local removal of silicon and measured by confocal Raman microscopy to monitor the lattice state. For the first time this study reveals and quantifies the impact of tensile and compressive lattice stress on the etch rate of silicon with the major outcome, that stress leads to a significantly anisotropic etching behavior. From the time dependent development of the scratch profiles and the topography of the surrounding wafer areas a detailed picture about the formation of highly reactive species and etching behavior against unstrained silicon is deduced.}, language = {en} } @misc{MeinelLangnerPreisetal., author = {Meinel, Birgit and Langner, Thomas and Preis, Pirmin and Wefringhaus, Eckard and Acker, J{\"o}rg}, title = {A two-step acidic texturization procedure for the manufacture of lowreflective multi-crystalline silicon solar wafer}, series = {Solar Energy}, volume = {193}, journal = {Solar Energy}, issn = {0038-092X}, doi = {10.1016/j.solener.2019.09.051}, pages = {395 -- 402}, abstract = {Texturization of multi-crystalline silicon wafers for photovoltaic application comprises the removal of the saw damage and shaping the topography of the bulk surface to create a surface with a low reflectivity, the so-called texture. Etching of multi-crystalline silicon wafers is usually carried out with acid mixtures consisting of hydrofluoric acid (HF), nitric acid (HNO₃) and hexafluorosilicic acid (H₂SiF₆). The present study reveals that such acid mixtures diluted by water or modified by the addition of ammonia solution, NH₃ (added as ammonium hydroxide solution, NH₄OH) can create textures with a significantly increased surface area exceeding that obtained by standard etching mixtures by a factor of 2.5-3. This yields a significantly reduced reflectivity of the etched wafer surface. However, the addition of water or NH₃ causes a very low etching rate, which makes such mixtures inapplicable for industrial application. To overcome this disadvantage, a two-step etching regime was developed to produce surface-enlarged solar wafers within a timespan typical for industrial production lines. This procedure comprises a first step of slow etching with a NH₃-modified etching mixture to pre-shape the ascut wafer surface. The second etching step is performed with a typical HF/HNO₃/H₂SiF₆ etching mixture that finalizes the texturization. Electrical measurements made on solar cells produced from such etched wafer confirm the improved surface quality of the two-step etched wafer compared to the reference wafer.}, language = {en} }